FM28V020-T
Abstract: No abstract text available
Text: FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32K x 8 1014 Read/Write Cycles NoDelay Writes Page Mode Operation Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules
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FM28V020
256Kbit
32Kx8
28-pin
-T28G)
32-pin
FM28V020-T
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FM28V100-TG
Abstract: RAMTRON
Text: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM Organized as 128Kx8 High Endurance 100 Trillion 1014 Read/Writes NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules
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FM28V100
128Kx8
33MHz
32-pin
FM28V100
FM28V100-TG
RAMTRON
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CDEP105-3R2MC-88
Abstract: 10TPD150M LTC3835 LTC3835-1 Si4840DY DN1014
Text: advertisement 80µA Quiescent Current Synchronous Step-Down Controller Extends Battery Life in Automotive Applications – Design Note 1014 Julian Zhu Introduction Battery powered applications that have a significant amount of time in standby mode, require electrical circuits
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LTC3835
100mV/
DN1014
dn1014f
CDEP105-3R2MC-88
10TPD150M
LTC3835-1
Si4840DY
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FM28V020-SG
Abstract: FM28V020-SGTR FM28V020 FM18L08
Text: Preliminary FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32Kx8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules
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FM28V020
256Kbit
32Kx8
40MHz
FM28V020
28-pin
MS-013D
FM28V020,
FM28V020-SG
FM28V020-SG
FM28V020-SGTR
FM18L08
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Untitled
Abstract: No abstract text available
Text: Preliminary FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32Kx8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules
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FM28V020
256Kbit
32Kx8
33MHz
32Kx8
28-pin
FM28V020
32-pin
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Untitled
Abstract: No abstract text available
Text: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8 1014 Read/Write Cycles NoDelay Writes Page Mode Operation Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules
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FM28V020
256Kbit
FM28V020
FM28V020-TG,
FM28V020-TG
A9482296TG
32Kx8
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Untitled
Abstract: No abstract text available
Text: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8 1014 Read/Write Cycles NoDelay Writes Page Mode Operation Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules
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FM28V020
256Kbit
FM28V020
FM28V020-TG,
FM28V020-TG
A9482296TG
32Kx8
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FM28V020-SG
Abstract: FM18L08 FM28V020 FM28V020-SGTR FM28V020-T FM28V020-TGTR
Text: Preliminary FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32Kx8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules
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FM28V020
256Kbit
32Kx8
33MHz
FM28V020
FM28V020-TG,
FM28V020-T
A09316340282
FM28V020-SG
FM18L08
FM28V020-SGTR
FM28V020-T
FM28V020-TGTR
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FM28V020-TG
Abstract: AEC-Q100-002 FM18L08 FM28V020 FM28V020-SG FM28V020-SGTR FM28V020TG AEC-Q100-003
Text: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8 1014 Read/Write Cycles NoDelay Writes Page Mode Operation Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules
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FM28V020
256Kbit
FM28V020
FM28V020-TG,
FM28V020-TG
A9482296TG
32Kx8
FM28V020-TG
AEC-Q100-002
FM18L08
FM28V020-SG
FM28V020-SGTR
FM28V020TG
AEC-Q100-003
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FM21L16
Abstract: No abstract text available
Text: Pre-Production FM21L16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM Organized as 128Kx16 Configurable as 256Kx8 Using /UB, /LB 1014 Read/Write Cycles NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process
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FM21L16
128Kx16
256Kx8
33MHz
FM21L16
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AN1014
Abstract: APP1014 MAX1692 MAX1729 MAX1749 MAX1879 1014 battery dc-dc-converter blockdiagram
Text: Maxim > App Notes > BATTERY MANAGEMENT POWER-SUPPLY CIRCUITS Keywords: portable power supply, wireless contact manager, shockfish SA, shockfish, PDA, Spotme, Max1879, max1729, max1749, max1692, portable power Mar 27, 2002 APPLICATION NOTE 1014 Design Case Study: Designing a Power Supply for a Portable, Wireless Contact
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Max1879,
max1729,
max1749,
max1692,
com/an1014
MAX1692:
MAX1729:
MAX1749:
MAX1879:
AN1014,
AN1014
APP1014
MAX1692
MAX1729
MAX1749
MAX1879
1014 battery
dc-dc-converter
blockdiagram
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FM28V100-TG
Abstract: FM28V100-TGTR tca 335 A
Text: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 High Endurance 100 Trillion 1014 Read/Writes NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process
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FM28V100
128Kx8
33MHz
128Kx8
32-pin
FM28V100
FM28V100,
FM28V100-TG
A9482296TG
FM28V100-TGTR
tca 335 A
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fm18W08-pg
Abstract: FM18W08
Text: FM18W08 PDIP 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion (1014) Read/Writes 38 year Data Retention @ +75C NoDelay Writes Advanced High-Reliability Ferroelectric Process
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FM18W08
256Kb
256Kbit
32Kx8
28-pin
FM18ess
fm18W08-pg
FM18W08
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Untitled
Abstract: No abstract text available
Text: Pre-Production FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process
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FM18W08
256Kb
256Kbit
32Kx8
28-piness
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Untitled
Abstract: No abstract text available
Text: Pre-Production FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 year Data Retention (@ +75C) NoDelay Writes Advanced High-Reliability Ferroelectric Process
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FM16W08
64Kbit
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FM28V010
Abstract: 16KX8 16kx8 ram FM28V020
Text: Preliminary FM28V010 128Kbit Bytewide F-RAM Memory Features 128Kbit Ferroelectric Nonvolatile RAM • Organized as 16,384 x 8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process
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FM28V010
128Kbit
33MHz
16Kx8
28-pin
MS-013D
FM28V010,
FM28V010-SG
A102196464473
FM28V010
16kx8 ram
FM28V020
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TSOP-II 44 layout
Abstract: FM28V102
Text: Preliminary FM28V102 1Mbit 64Kx16 F-RAM Memory FEATURES 1Mbit Ferroelectric Nonvolatile RAM Organized as 64Kx16 Configurable as 128Kx8 Using /UB, /LB 1014 Read/Write Cycles NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process
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FM28V102
64Kx16
128Kx8
33MHz
44-pin
TSOP-II 44 layout
FM28V102
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FM28V020-SG
Abstract: AEC-Q100-002 FM18L08 FM28V020 FM28V020-SGTR
Text: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process
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FM28V020
256Kbit
33MHz
FM28V020
FM28V020-TG,
FM28V020-TG
A9482296TG
32Kx8
FM28V020-SG
AEC-Q100-002
FM18L08
FM28V020-SGTR
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FM28V100
Abstract: No abstract text available
Text: Preliminary FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • High Endurance 100 Trillion 1014 Read/Writes • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process
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FM28V100
128Kx8
33MHz
128Kx8
FM28V100
32-pin
FM28V100,
FM28V100-T
A08316340282
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FM28V100-TG
Abstract: FM28V100 FM28V100-T FM18L08 FM20L08 A16-A3
Text: Preliminary FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • High Endurance 100 Trillion 1014 Read/Writes • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process
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FM28V100
128Kx8
33MHz
FM28V100
while13
128Kx8
32-pin
FM28V100,
FM28V100-T
FM28V100-TG
FM28V100-T
FM18L08
FM20L08
A16-A3
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Untitled
Abstract: No abstract text available
Text: n FM16W08 PDIP 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 100 Trillion (1014) Read/Writes 38 year Data Retention @ +75C NoDelay Writes Advanced High-Reliability Ferroelectric Process
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FM16W08
64Kbit
28-pin
FM16Wess
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Untitled
Abstract: No abstract text available
Text: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 High Endurance 100 Trillion 1014 Read/Writes NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process
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FM28V100
128Kx8
33MHz
FM28V100
FM28V100,
FM28V100-TG
A9482296TG
128Kx8
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FM28V202
Abstract: FM28V202TG TSOP-II 44 Recommended PCB Footprint
Text: Preliminary FM28V202 2Mbit 128Kx16 F-RAM Memory FEATURES 2Mbit Ferroelectric Nonvolatile RAM Organized as 128Kx16 Configurable as 256Kx8 Using /UB, /LB 1014 Read/Write Cycles NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process
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FM28V202
128Kx16
256Kx8
33MHz
-40ess
FM28V202
FM28V202TG
TSOP-II 44 Recommended PCB Footprint
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FM22L16-55-TG
Abstract: FM20L08 FM22L16 256KX16
Text: Preliminary FM22L16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process
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FM22L16
256Kx16
512Kx8
40MHz
256Kx16
FM22L16
FM22L16,
FM22L16-55-TG
FM22L16-55-TG
FM20L08
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