102 m5c
Abstract: 103 m5c
Text: Schottky Barrier Diodes SBD MA3SD05 Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) • Features 0.12+0.05 –0.02 0.88+0.05 –0.03 3° (0.44) 1 2 1.60±0.05 • Series connection • High-density mounting is possible • SS-Mini type 3-pin package
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MA3SD05
SC-89
PG-10N)
SAS-8130)
102 m5c
103 m5c
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102 m5c
Abstract: 103 m5c MA4SD05X
Text: Schottky Barrier Diodes SBD MA4SD05X Silicon epitaxial planar type For high-speed switching circuits Unit: mm 1.6±0.05 1.0±0.05 • Features Two isolated elements are contained in one package, allowing high-density mounting Optimum for high frequency rectification because of its short reverse recovery
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Original
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MA4SD05X
102 m5c
103 m5c
MA4SD05X
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3SD05F Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 Maximum peak reverse voltage Single Symbol Rating Unit VR 45 V VRM 45 V IF 100 mA Series Peak forward Single current Series Non-repetitive peak Single 300 IFSM
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Original
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MA3SD05F
SC-81
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4SD05X Silicon epitaxial planar type For high-speed switching circuits Unit: mm 1.6±0.05 1.0±0.05 • Features Two isolated elements are contained in one package, allowing high-density
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Original
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2002/95/EC)
MA4SD05X
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PDF
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103 m5c
Abstract: MA3SD05F marking m5c
Text: Schottky Barrier Diodes SBD MA3SD05F Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 Maximum peak reverse voltage Single Symbol Rating Unit VR 45 V VRM 45 V IF 100 mA Double Peak forward Single current Double Non-repetitive peak Single 300 IFSM
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Original
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MA3SD05F
SC-81
103 m5c
MA3SD05F
marking m5c
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PDF
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MA5J002D
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA5J002D Silicon epitaxial planar type Unit: mm 2.0±0.1 For high speed switching circuits 0.7±0.1 • Includes 4 elements of anode common connection • Parts reduction is possible
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Original
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2002/95/EC)
MA5J002D
MA5J002D
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4SD05X Silicon epitaxial planar type For high-speed switching circuits Unit: mm 1.6±0.05 1.0±0.05 • Features Two isolated elements are contained in one package, allowing high-density
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Original
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2002/95/EC)
MA4SD05X
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PDF
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MA3SD05F
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3SD05F Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 Maximum peak reverse voltage Single Symbol Rating Unit VR 45 V VRM 45 V IF 100 mA Series Peak forward
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Original
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2002/95/EC)
MA3SD05F
SC-81
MA3SD05F
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PDF
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MA5J002D
Abstract: marking m5c
Text: Switching Diodes MA5J002D Silicon epitaxial planar type Unit: mm 2.0±0.1 For high speed switching circuits 0.7±0.1 • Includes 4 elements of anode common connection • Parts reduction is possible • Ideal for surge voltage absorption 1 2 5˚ 1.25±0.1
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Original
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MA5J002D
MA5J002D
marking m5c
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3SD05F Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 Maximum peak reverse voltage Single Symbol Rating Unit VR 45 V VRM 45 V IF 100 mA Series Peak forward
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Original
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2002/95/EC)
MA3SD05F
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PDF
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MA5J002D
Abstract: No abstract text available
Text: Switching Diodes MA5J002D Silicon epitaxial planar type Unit: mm 2.0±0.1 For high speed switching circuit 0.7±0.1 • S-Mini type 5-pin package • Includes 4 elements of annode common connection • Parts reduction is possible • Ideal for surge voltage absorption
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Original
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MA5J002D
MA5J002D
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PDF
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marking m5c
Abstract: MA3SD05 SC-89
Text: Schottky Barrier Diodes SBD MA3SD05 Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) • Features 0.12+0.05 –0.02 0.88+0.05 –0.03 3° 1.60±0.05 (0.44) 1 2 (0.80) 3 • Series connection • High-density mounting is possible • SS-Mini type 3-pin package
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Original
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MA3SD05
marking m5c
MA3SD05
SC-89
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA5J002D Silicon epitaxial planar type Unit: mm 2.0±0.1 For high speed switching circuits 0.7±0.1 • Includes 4 elements of anode common connection • Parts reduction is possible
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Original
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2002/95/EC)
MA5J002D
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PDF
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MA4SD05X
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4SD05X Silicon epitaxial planar type For high-speed switching circuits Unit: mm 1.6±0.05 1.0±0.05 • Features Two isolated elements are contained in one package, allowing high-density
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Original
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2002/95/EC)
MA4SD05X
MA4SD05X
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3SD05FG Silicon epitaxial planar type For high frequency rectification • Features ■ Package • Series connection • High-density mounting is possible • Code
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Original
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2002/95/EC)
MA3SD05FG
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PDF
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MA3SD05F
Abstract: marking m5c
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3SD05F Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 For high frequency rectification • Features (0.44) M Di ain sc te on na tin nc ue e/ d 0.12+0.05
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Original
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2002/95/EC)
MA3SD05F
SC-81
MA3SD05F
marking m5c
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PDF
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MA3SD05FG
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3SD05FG Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high frequency rectification • Features ■ Package • Series connection • High-density mounting is possible
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Original
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2002/95/EC)
MA3SD05FG
MA3SD05FG
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PDF
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MA5J002D
Abstract: marking m5c
Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA5J002D Silicon epitaxial planar type Unit: mm 2.0±0.1 For high speed switching circuits 0.7±0.1 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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Original
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2002/95/EC)
MA5J002D
MA5J002D
marking m5c
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PDF
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MA5J002D
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA5J002D Silicon epitaxial planar type Unit: mm 2.0±0.1 0.7±0.1 (0.65) (0.65) 5 4 1.25±0.1 2.1±0.1 • Features 1 2 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b
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Original
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2002/95/EC)
MA5J002D
MA5J002D
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PDF
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CA3042
Abstract: LA1342 A7051 MTZ JT-7216B valvo R820
Text: NO, 1 0 2 A SANYO H «#* 370-05 7051 V të Û276-6-2111 *ttR NO, 102 t 1342 i a LA 5 ) ¥ ï / U '>"/•? ') ~ ~ y IC LAI342 l i • u - r |C F -*-A F . 71 ^ ü S ( * ë W w 7 > At •r . v i'' V 0 $!&\ ^ fs > æ! IK^Cä] SS-, '*' Îf§ |7 '&.?. î:-' ') î
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OCR Scan
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LA1342
CA3042
20tnA
7051Y0
421tki
22JiEÃ
201og
102-3/A
CA3042
A7051
MTZ JT-7216B
valvo
R820
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PDF
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SHR400R21
Abstract: H-17 H-18 T-39
Text: — 102 — 2 * SH R 40 0 R 2 1 o m w rm tt -> i; 3 1300V C 9—> • o 630A 4 0 ^ s fe ^ • « A tt i* « rii! till SH R400R21 Ç' Vdsm / V drm /t (A\)//T(R\1S> 1300 ( f < 5 ms, r ; = 0 ~ 1 1 5 “C ) / 1300 400 ./ 630 /ft(AV)//ft( RMS) 150 / 235 I tsm
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OCR Scan
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SHR400R2
SHR400R21
50Hz/60Hz,
200X103
31X103
H-101
SHR400R21
H-17
H-18
T-39
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PDF
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2D1150D-050
Abstract: 2DI100Z-120 2DI150D H-17 H-18 H-19 H-22
Text: Ovó 002 oo fi Oi 001 08 001 001 OOfil 001 001 OSS 008 OS* 0021 0001 OS* 008 OS* 00*1 0021 0021 0001 OSÉ 008 3I °" A 8 tB % 0002 00*2 0081 0002 0002 08EI 0002 08ÊI 0002 0002 0091 0091 0*21 0091 0*21 0091 0091 0001 0001 00i CAO moi OSI Ofil fi21~0*fi2I~0*S2I—OT—
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OCR Scan
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H-101
2D1150D-050
2DI100Z-120
2DI150D
H-17
H-18
H-19
H-22
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PDF
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ky 708
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR SALES OFFICES - U.S.A. North Central Northwest 300 Park Boulevard Suite 210 Itasca, IL 60143-2636 TEL: 708 775-1050 FAX: (708) 775-1058 3655 North First Street San Jose, CA 95134 TEL: (408) 954-7000 FAX: (408) 954-7883 south Central
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OCR Scan
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124th
ky 708
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PDF
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SAMSUNG 834
Abstract: shing wai k27419 NA76 st 8843 D8024 ITT 813
Text: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North East North Central Northwest 20 Mall Road Suite 410 Burlington, MA 01803 Tel: 617 273-4888 Fax: (617) 273-9363 300 Park Boulevard Suite 210 Itasca. IL 60143-2636 Tel: (708)775-1050 Fax: (708) 775-1058 3655 North First Street
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OCR Scan
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154th
W17194
SAMSUNG 834
shing wai
k27419
NA76
st 8843
D8024
ITT 813
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PDF
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