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    1024C Search Results

    1024C Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    8N3S272AC-1024CDI8 Renesas Electronics Corporation LVPECL Frequency-Programmable Crystal Oscillator Visit Renesas Electronics Corporation
    8N3S272AC-1024CD Renesas Electronics Corporation LVPECL Frequency-Programmable Crystal Oscillator Visit Renesas Electronics Corporation
    8N4S271FC-1024CDI Renesas Electronics Corporation LVDS Frequency-Programmable Crystal Oscillator Visit Renesas Electronics Corporation
    8N3S272AC-1024CDI Renesas Electronics Corporation LVPECL Frequency-Programmable Crystal Oscillator Visit Renesas Electronics Corporation
    8N3S272AC-1024CD8 Renesas Electronics Corporation LVPECL Frequency-Programmable Crystal Oscillator Visit Renesas Electronics Corporation
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    1024C Price and Stock

    Keystone Electronics Corp 1024C

    RETAINER FOR BATTERY HOLDER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1024C Bulk 5,589 1
    • 1 $0.85
    • 10 $0.707
    • 100 $0.587
    • 1000 $0.48731
    • 10000 $0.42787
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    Mouser Electronics 1024C 11,752
    • 1 $0.6
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    • 1000 $0.36
    • 10000 $0.293
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    Newark 1024C Bulk 1,000
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    • 10000 $0.414
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    RS 1024C Bulk 500
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    • 10000 $0.7
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    Future Electronics 1024C Bulk 1,000
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    • 10000 $0.44
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    TME 1024C 100
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    Interstate Connecting Components 1024C 9
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    Sager 1024C 1,000
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    • 10000 $0.3007
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    Essentra Components 0501024CNB

    CAP NUT 10-24 THREAD .400 HEIGHT
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    DigiKey 0501024CNB Bulk 732 1
    • 1 $0.14
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    • 100 $0.0802
    • 1000 $0.06471
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    Century Spring Corp 71024CS

    COMP MUSIC WIRE 0.300" 2.750"
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 71024CS Box 256 1
    • 1 $7.51
    • 10 $7.51
    • 100 $1.2763
    • 1000 $1.2763
    • 10000 $1.2763
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    Samtec Inc MMSD-10-24C-L-12.00-S-K

    .100 SOCKET DISCREET CABLE ASSEM
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    DigiKey MMSD-10-24C-L-12.00-S-K Bag 182 1
    • 1 $6.9
    • 10 $6.37
    • 100 $4.86
    • 1000 $4.5625
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    Mouser Electronics MMSD-10-24C-L-12.00-S-K 184
    • 1 $6.9
    • 10 $6.37
    • 100 $5.93
    • 1000 $3.91
    • 10000 $3.28
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    Century Spring Corp TO-1024CS

    TORS O=.271, W=.042
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    DigiKey TO-1024CS Box 176 1
    • 1 $5.38
    • 10 $5.38
    • 100 $5.1072
    • 1000 $4.032
    • 10000 $4.032
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    1024C Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1024C Keystone Electronics Accessories, Battery Products, RETAINER FOR BATTERY HOLDER Original PDF
    1024C Murata Power Solutions Transformers - Pulse Transformers - PULSE XFMR 1.2CT:1CT 8.8MH Original PDF
    1024-Channel-ADPCM Amphion Semiconductor 1024-Channel ADPCM Original PDF

    1024C Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Secondary power supply series for automotive 2.69 to 5.5V, 1.2V Output, 2.25MHz Synchronous Step-Down Converter BD90571EFJ-C ●General Description The BD90571EFJ-C is a synchronous rectification type step-down DC/DC converter with a 2.25MHz fixed


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    25MHz BD90571EFJ-C BD90571EFJ-C 25MHz PDF

    FT800

    Abstract: FT800 Embedded Video Engine Datasheet DS_FT800 MPU 8751 s vqfn 7 x 7 TRAY 0.9mm
    Text: Document No.: FT_000792 FT800 Embedded Video Engine Datasheet Version 1.1 Clearance No.: FTDI# 334 Future Technology Devices International Ltd. FT800 Embedded Video Engine The FT800 is an easy to use graphic controller targeted for embedded applications to generate high-quality


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    FT800 FT800 FT800 Embedded Video Engine Datasheet DS_FT800 MPU 8751 s vqfn 7 x 7 TRAY 0.9mm PDF

    MSC2323258D

    Abstract: No abstract text available
    Text: This version: Mar. 3. 1999 Semiconductor MSC2323258D-xxBS4/DS4 2,097,152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSC2323258D-xxBS4/DS4 is a fully decoded, 2,097,152-word x 32-bit CMOS dynamic random access memory module composed of four 16Mb DRAMs in SOJ packages mounted with eight decoupling capacitors on a


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    MSC2323258D-xxBS4/DS4 152-word 32-bit MSC2323258D-xxBS4/DS4 72-pin MSC2323258D PDF

    E5-1000-125-N-S-D-D

    Abstract: No abstract text available
    Text: HEDC-55xx/HEDC-56xx Two or Three Channel Quick Assembly Encoders With Connector Latch Data Sheet Description Features The HEDC-5xxx-xxx, while similar to the industry standard HEDS-5xxx kit encoder, provides a connector latch on the cover housing to improve connector retention. This


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    HEDC-55xx/HEDC-56xx HEDS-9000 AV02-3381EN E5-1000-125-N-S-D-D PDF

    MSC23B236D

    Abstract: No abstract text available
    Text: This version: Mar. 3. 1999 Semiconductor MSC23B236D-xxBS8/DS8 2,097,152-word x 36-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The MSC23B236D-xxBS8/DS8 is a fully decoded, 2,097,152-word x 36-bit CMOS dynamic random access memory module composed of four 16Mb DRAMs in SOJ packages and four 2Mb DRAMs in SOJ packages mounted with


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    MSC23B236D-xxBS8/DS8 152-word 36-bit MSC23B236D-xxBS8/DS8 72-pin MSC23B236D PDF

    G10768

    Abstract: 1000 hz cmos Image Sensors
    Text: InGaAs linear image sensors G10768 series Near infrared image sensor 0.9 to 1.7 m with 1024 pixels and high-speed line rate The G10768 series is a 1024-channel, high-speed infrared image sensor designed for applications such as foreign object screening and medical diagnostic equipment where a multichannel high-speed line rate is required. The signal processing circuit uses


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    G10768 1024-channel, G10768-1024D) G10768-1024DB) SE-171 KMIR1015E06 1000 hz cmos Image Sensors PDF

    G10768

    Abstract: G10768-1024DB
    Text: InGaAs linear image sensors G10768 series Near infrared image sensor 0.9 to 1.7 m with 1024 pixels and high-speed line rate The G10768 series is a 1024-channel, high-speed infrared image sensor designed for applications such as foreign object screening and medical diagnostic equipment where a multichannel high-speed line rate is required. The signal processing circuit uses


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    G10768 1024-channel, G10768-1024D) G10768-1024DB) SE-171 KMIR1015E07 G10768-1024DB PDF

    642006EGM1G09TD

    Abstract: DIMM 1998
    Text: 2M x 64 Bit 3.3V UNBUFFERED EDO DIMM Extended Data Out EDO DRAM DIMM 642006EGM1G09TD 168 Pin 2Mx64 EDO DIMM Unbuffered, 1k Refresh, 3.3V with SPD Pin Assignment Pin# General Description The module is a 2Mx64 bit, 9 chip, 3.3V, 168 Pin DIMM module consisting of (8) 1Mx16 (TSOP) DRAM


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    642006EGM1G09TD 2Mx64 DS390-1 DIMM 1998 PDF

    Untitled

    Abstract: No abstract text available
    Text: TMS44100, TMS44100P 4194304-BIT DYNAMIC RANDOM-ACCESS MEMORY SMHS410F-SEPTEMBER 1989-REVISED DECEMBER 1992 Single 5-V Power Supply ±10% Tolerance Performance Ranges: ACCESS ACCESS ACCESS SD P AC K A G E t (TOP VIEW) DJ P A C K A G E t (TOP VIEW) Organization . . . 4194 304 x 1


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    TMS44100, TMS44100P 4194304-BIT SMHS410F-SEPTEMBER 1989-REVISED TMS44100/P-60 TMS44100/P-70 TMS44100/P-80 A0-A10 TMS44100 PDF

    Untitled

    Abstract: No abstract text available
    Text: TMS418160A 1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORY S M K S 891C - A U G U S T 1996 - R EVISED O C TO BE R 1997 This data sheet is applicable to TMS418160As symbolized by Revision “E” and subsequent revisions as described in the device symbolization section.


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    TMS418160A 16-BIT TMS418160As 1024-Cycle R-PDSO-J42) 18160A PDF

    44-800-p

    Abstract: 44800P PIN DIAGRAM of IC AD 524 IN2045
    Text: TMS44800, TMS44800P 524 288-WORD BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORIES SMHS480B-AUGUST1992-REVISED DECEMBER 1992 This data sheet is applicable to all TMS44800/Ps symbolized with Revision“B" and subsequent revisions as described on page 22. * Organization . . . 524 288 x 8


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    TMS44800, TMS44800P 288-WORD SMHS480B-AUGUST1992-REVISED TMS44800/Ps SMHS480B-AUQUST1992-REVISED TMS44800J 44-800-p 44800P PIN DIAGRAM of IC AD 524 IN2045 PDF

    TMS44410

    Abstract: TMS44410-70
    Text: TMS44410 1 048 576-WORD BY 4-BIT WRITE-PER-BIT DYNAMIC RANDOM-ACCESS MEMORY REV A - • Organization . . . 1 048 576 x 4 SMHS441 JANUARY 1991 DM and DJ Packaget Top View • Single 5-V Power Supply (±10% Tolerance) • Performance Ranges: ACCESS ACCESS ACCESS


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    TMS44410 576-WORD SMHS441 TMS44410-60 TMS44410-70 TMS44410-80 TMS44410-10 PDF

    TMS44101

    Abstract: No abstract text available
    Text: TMS44101 4194 304-BIT DYNAMIC RANDOM-ACCESS MEMORY REV A — SMHS411 — JA N U A R Y 1991 Organization . . . 4 194 304 x DC w C RAS C 1 1 ^ 2 3 Z 4 NC A 10 C 5 Single 5-V Power Supply ±10% Tolerance Performance Ranges: A0 C 9 A1 C 10 A2 C 11 READ ACCESS ACCESS ACCESS


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    TMS44101 304-BIT SMHS411 TMS44101s TMS44101-60 TMS44101-10 PDF

    TS-2321

    Abstract: No abstract text available
    Text: SMJ44400 1 048 576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS041D - JANUARY 1991 - REVISED JUNE 1995 Processed to MIL-STD-883, Class B Organization. . . 1 048 576 x 4 Single 5-V Power Supply ±10% Tolerance Performance Ranges: A CCESS ACCESS A CCESS


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    SMJ44400 576-WORD SGMS041D MIL-STD-883, SMJ44400-80 SMJ44400-10 SMJ44400-12 TS-2321 PDF

    bPA20

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 V 1 7 1 0 0 A S e r ie s 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17100Ais the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51V17100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


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    HY51V17100Ais HY51V17100A HY51V17100A 1AD22-00-MAY94 4b750flfl HY51V17100AJ HY51V17100ASLJ HY51V17100AT HY51V17100ASLT bPA20 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY514100B Series •HYUNDAI 4M X 1-bit CMOS DRAM DESCRIPTION The HY514100B is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


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    HY514100B HY514100B 4b750Ã 000413b 1AC09-10-MAY95 HY514100BJ HY514100BLJ PDF

    Untitled

    Abstract: No abstract text available
    Text: HM5251165B-75/A6/B6 HM5251805B-75/A6/B6 HM5251405B-75/A6/B6 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword x 16-bit x 4-bank/16-Mword x 8-bit x 4-bank /32-Mword x 4-bit x 4-bank PC/133, PC/100 SDRAM HITACHI ADE-203-1095 Z Preliminary Rev. 0.0 Sep. 1, 1999


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    HM5251165B-75/A6/B6 HM5251805B-75/A6/B6 HM5251405B-75/A6/B6 Hz/100 16-bit 4-bank/16-Mword /32-Mword PC/133, PC/100 ADE-203-1095 PDF

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 4 4 0 3 B • • H Y U N D A I S e r ie s IM x 4-bit CMOS DRAM with4CAS PRELIMINARY DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO controls DQO,


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    HY51V4403B 050f1 1AC1S-00-MAY94 HY51V4403BJ HY51V4403BU HYS1V4403BSU PDF

    Untitled

    Abstract: No abstract text available
    Text: » « H Y U N D A I e r ie s 1M x 4H_bŸjt 5C1M40 S4 0D R3 ABM Sw ,th 4C A S PRELIMINARY DESCRIPTION The HY514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CSSO controls DQO,


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    5C1M40 HY514403B 1AC15-00-MAY94 4b750fi6 HY514403BJ HY514403BU PDF

    Untitled

    Abstract: No abstract text available
    Text: HY51V4403B Series “H Y U N D A I 1M x 4-bit CMOS DRAM with 4CÄS DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576x4-bit. The HY51V4403B has four ¿ASs CAS0-3 w hich control corresponding data I/O port in conjunction with OE(eg.CASO controls DQO,


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    HY51V4403B 576x4-bit. HY51V4403B 1AC16-10-MAY95 HY51V4403BJ HY51V4403BLJ PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TSZ2G48SJSZ2J48S TOSHIBA SOLID STATE AC RELAY TSZ2G48S, TSZ2J48S Unit in mm OPTICALLY ISOLATED, NORM ALLY OPEN SSR COMPUTER PERIPHERALS 6.5 M AX. 24 M A X. MACHINE TOOL CONTROLS PROCESS CONTROL SYSTEMS TRAFFIC CONTROL SYSTEMS R.M.S On-State Current


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    TSZ2G48SJSZ2J48S TSZ2G48S, TSZ2J48S PDF

    FZ77

    Abstract: HM5264165 HM5264165TT-10 HM5264165TT-12 HM5264165TT-15
    Text: HM5264165 Series HM5264805 Series HM5264405 Series 1,048,576-word x 16-bit x 4-bank Synchronous Dynamic RAM 2,097,152-word x 8-bit x 4-bank Synchronous Dynamic RAM 4,194,304-word x 4-bit x 4-bank Synchronous Dynamic RAM HITACHI ADE-203-497 Z Preliminary Rev. 0.1


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    HM5264165 HM5264805 HM5264405 576-word 16-bit 152-word 304-word ADE-203-497 FZ77 HM5264165TT-10 HM5264165TT-12 HM5264165TT-15 PDF

    marking WMM

    Abstract: RA52 1cas5 22r29
    Text: 1 MEG x 4 DRAM DRAM QUAD CAS PARITY, FAST PAGE MODE FEATURES • Four independent CAS controls, allowing individual m anipulation to each of the four data In p u t/O u tp u t ports DQ1 through DQ4 . • Offers a single chip solution to byte level parity for 36bit w ords w hen using 1 Meg x 4 DRAMs for mem ory


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    225mW 1024-cycle D01-4 T-46-23-17 MT4C4256DJ MT4C4259EJ marking WMM RA52 1cas5 22r29 PDF

    S891C

    Abstract: SS828
    Text: TMS418160A 1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORY S M K S891C -A U G U S T 1996-R E V IS E D OCTOBER 1997 This data sheet is applicable to TMS418160As symbolized by Revision “E ” and subsequent revisions as described in the device symbolization section.


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    TMS418160A 16-BIT S891C 1996-R TMS418160As 1024-Cycle 18160A-50 18160A-60 4181B0A-70 SS828 PDF