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    1024X1 STATIC RAM Search Results

    1024X1 STATIC RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4CT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7AFS Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-923, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation

    1024X1 STATIC RAM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1024x1 static ram

    Abstract: No abstract text available
    Text: AMI _ S6508/S6508A AMERICAN 1024 BIT 1024X1 STATIC CMOS RAM Features General Description □ Ultra Low Standby Power The A M I S6508 family of 1024X1 bit static CMOS RAM s offers ultra low power dissipation w ith a single power supply. The device is available in two versions.


    OCR Scan     		S6508/S6508A 1024X1) S6508 1024X1 S6508) S6508 S6508P S6508PI 1024x1 static ram PDF

    1024x1 static ram

    Abstract: ami s6508 8650 1024X1 S6508 S6508-1 S6508A S6508E S6508EI S6508P
    Text: _ S6508/S6508A AMERICAN MIMHl'il 'ill M'i III! ^ j 1024 BIT 1024X1 STATIC CMOS RAM Features General Description □ Ultra Low Standby Power The AMI S6508 family of 1024X 1 bit static CMOS RAMs offers ultra low power dissipation with a single


    OCR Scan     		S6508/S6508A 1024X1) S6508 S6508A S6508) 185ns 1024X1 S6508 1024x1 static ram ami s6508 8650 S6508-1 S6508E S6508EI S6508P PDF

    Untitled

    Abstract: No abstract text available
    Text: AMI _ S6508/S6508A m u im un I in i m I h il im 1024 BIT 1024X1 STATIC CM OS RAM Features General Description □ Ultra Low Standby Power □ S6508 Completely TTL Compatible □ S6508A Completely CMOS Compatible


    OCR Scan     		S6508/S6508A 1024X1) S6508 S6508A S6508) 185ns 1024X1 PDF

    1024x1 static ram

    Abstract: CX2201A
    Text: 1K Commercial X2201A e m 1024x1 Bit Nonvolatile Static RAM FEATURES • Single 5V Supply • Fully TTL Compatible • Infinite E^PROM Array Recall, RAM Read and Write Cycles • Access Time of 300 ns Max.


    OCR Scan     		X2201A 1024x1 X2201A 1024x1 static ram CX2201A PDF

    93L425DC

    Abstract: 93425 1024x1 static ram
    Text: 93425/93L425 1024x1-Bit Static Random Access Memory FAIRCHILD A Schlumberger Company Memory and High Speed Logic Description The 93425 is a 1024-bit read/write Random Access Memory RAM , organized 1024 words by one bit. It is designed for high speed cache, control and buffer


    OCR Scan     		93425/93L425 1024x1-Bit 16-Pin 1024-bit 93L425) 93425XX30 93425YY30 93L425XX35 93425YY40 93L425YY40 93L425DC 93425 1024x1 static ram PDF

    Untitled

    Abstract: No abstract text available
    Text: HM-6518 H A R R IS æ S E M I C O N D U C T O R 1024x1 CMOS RAM February 1992 Features Description • Low Power Standby. 50nW Max. The HM-6518 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous


    OCR Scan     		HM-6518 1024x1 HM-6518 20mW/MHz 180ns PDF

    X2201A

    Abstract: 710ST
    Text: t 1K Commercial X2201A e s r 1024x1 Bit Nonvolatile Static RAM The NOVRAM design allows data to be easily trans­ ferred from RAM to E2PROM store and from E2PROM to RAM (recall). The store operation is com­ pleted in 10 ms or less and the recall is typically com­


    OCR Scan     		X2201A 1024x1 RR504, X2201A 710ST PDF

    HM3-6518-9

    Abstract: 1024x1 static ram 6518-9 HM3-6518
    Text: m HM-6518 H A R R IS S E M I C O N D U C T O R 1024x1 CMOS RAM February 1992 Features Description • Low Power Standby. 50nW Max. The HM-6518 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous


    OCR Scan     		HM-6518 1024x1 HM-6518 HM3-6518-9 1024x1 static ram 6518-9 HM3-6518 PDF

    1024x1 static ram

    Abstract: S4025 S4025H s4015 IS401
    Text: Am i S 4 0 1 5 /S 4 0 2 5 RAMs 1 0 2 4 BIT 1024x1 HIGH SPEED STATIC VMOS RAM Fea tu res G en era l D escription □ Pin Compatible with 93415 (S4015) and 93425 (S4025) □ Single + 5V Power Supply □ Completely TTL Compatible □ Open Collector Output — S4015


    OCR Scan     		1024x1) S4015) S4025) S4015 S4025 S4015/S4025 1024x1 is401« 1024x1 static ram S4025H IS401 PDF

    BIT 3195 G

    Abstract: 1024x1 static ram
    Text: f /\?r c h ?l B F100415 1024x1-Bit Static Random Access Memory A Schlumberger Company F100K ECL Product Connection Diagram Description The F100415 is a 1024-bit read/w rite Random Access M em ory RAM , organized as 1024 w ords by one bit per w ord and designed fo r high-speed scratchpad, control


    OCR Scan     		F100415 1024x1-Bit F100K 16-Pin 1024-bit F100415 4096-Word BIT 3195 G 1024x1 static ram PDF

    1024X1

    Abstract: No abstract text available
    Text: HM-6508/883 £ü HARRIS S E M I C O N D U C T O R 1024x1 CMOS RAM February 1992 Features Description • This Circuit is Processed In Accordance to MII-Std-883 and is Fully Conformant Under the Provi­ sions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM


    OCR Scan     		HM-6508/883 1024x1 HM-6508/883 lt-STD-1835, GDIP1-T16 PDF

    Untitled

    Abstract: No abstract text available
    Text: HM-6508/883 fS l H A R R I S S E M I C O N D U C T O R 1024x1 CMOS RAM February 1992 Features Description • This Circuit is Processed in Accordance to Mil-Std-883 and Is Fully Conform ant Under the Provi­ sions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM


    OCR Scan     		HM-6508/883 1024x1 Mil-Std-883 HM-6508/883 180ns MIL-STD-1835, GDIP1-T16 MIL-M-38510 PDF

    Z80A CPU

    Abstract: Z80A-CTC z80a-PIO 2316E 4027 ram Z80A Z80A-CPU z80 pio Z80 RAM 1024x1 static ram
    Text: MOS INTEGRATED CIRCUITS continued POWER TEMP. RANGE (°C) RAM 1024x1 bit static 2 5 - 0.25 2.2 2.2 33 - 0-70 D IP K, M M 2316E •ROM 2Kx8 bit 2 5 - 0.45 2.2 2.2 40 - 0-70 DIP R, U M 2704 PROM 512x8 bit 5 5 12 0.45 2.2 2.2 - - 0-70 D IP J M 2708 PROM 1Kx8 bit


    OCR Scan     		1024x1 2316E 512x8 4096x1 Z80/Z80A Z80A CPU Z80A-CTC z80a-PIO 2316E 4027 ram Z80A Z80A-CPU z80 pio Z80 RAM 1024x1 static ram PDF

    4801a 8 pins

    Abstract: 4801A 1024x1 static ram EMM Semi 4kx1 static ram 4801 4096 bit static RAM 4096 bit RAM 4801ACC
    Text: *» '•*«>+• »»»V' «*•»,-r/- -» „¿ ÿ î^ - rtSiÈ Em m SEM I FEA TU R ES ■ Single + 5 V Power Supply ■ 4Kx1 Organization ■ Replaces 4 1024x1 Static RAMs ■ Com pletely S tatic—No C locks or Refresh ■ 18 Pin Package ■ A cce ss/C ycle Times As Low As 400 nsec max


    OCR Scan     		4801450NSEC, 4096x1 1024x1 Number4801 40961-bit 4801a 8 pins 4801A 1024x1 static ram EMM Semi 4kx1 static ram 4801 4096 bit static RAM 4096 bit RAM 4801ACC PDF

    1024x1 static ram

    Abstract: L15A L25A MCM2125A mcm2115a-45 2115A 530ns
    Text: MCM2115A MCM21L15A MCM2125A MCM21L25A MOTOROLA 1024x1 STATIC RAM M O S T h e M C M 2 1 1 5 A a n d M C M 2 1 2 5 A f a m ili e s a r e h i g h - s p e e d , 1 0 2 4 w o r d s b y o n e - b it , ra n d o m -a c c e s s m e m o r ie s fa b r ic a te d p e r f o r m a n c e N - c h a n n e l s i li c o n - g a t e t e c h n o lo g y .


    OCR Scan     		MCM2115A MCM21L15A MCM2125A MCM21L25A 1024x1 MCM2115A) MCM2125A) 1024x1 static ram L15A L25A mcm2115a-45 2115A 530ns PDF

    bk p36

    Abstract: 1024x1 static ram 16x4-Bit 4710B 4720B 4725B F16K3 F16K4 F16K5 M40272
    Text: •n fO «i MOS 4096x1 1024x4 4096x1 - M40272 16,384x1 CO ro 4096x1 -fck 4096x1 cn Item o 0 o Organization s o (O Ô o 3 a Description Access Time ns (Max Cycle Time ns (Min) Power Dissipation mW (Max) S A H > z o 2 > o o m CO 2 m 5 o X k k k k k oo O 03


    OCR Scan     		1024x4 F2114171 4096x1 M40272 M40273 M40274 M40275 bk p36 1024x1 static ram 16x4-Bit 4710B 4720B 4725B F16K3 F16K4 F16K5 PDF

    Untitled

    Abstract: No abstract text available
    Text: HM-6508 f ï î H A R R IS U U S E M I C O N D U C T O R 1024x1 CMOS RAM February 1992 Features Description • Low Power S tandby. 50^iW Max. • Low Power O p e ra tio n . 20mW /MHz Max.


    OCR Scan     		HM-6508 1024x1 HM-6508 180ns PDF

    1024x1 static ram

    Abstract: No abstract text available
    Text: HS-6508RH ¡13 H A R R IS U U S E M I C O N D U C T O R Radiation Hardened 1024x1 CMOS RAM December 1992 Pinouts Features • Functional Total Dose 2 x 104 RAD Si HS1-6508RH 16 PIN CERAMIC DIP CASE OUTLINE D2, CONFIGURATION 3 • Latch-Up Free To > 5.0 x 1011 RAD(Si)/s


    OCR Scan     		HS-6508RH 1024x1 HS1-6508RH 25mW/MHz 300ns 1024x1 static ram PDF

    Untitled

    Abstract: No abstract text available
    Text: ¡ f i H U S E M I C O N D U C T O R U A R R HS-6508RH IS Radiation Hardened 1024x1 CMOS RAM December 1992 Pinouts Features • Functional Total Dose 2 x 104 RAD Si HS1-6508RH 16 PIN CERAMIC DIP CASE OUTLINE D2, CONFIGURATION 3 TOP VIEW • Latch-Up Free To > 5.0 x 1011 RAD(Si)/s


    OCR Scan     		HS-6508RH 1024x1 HS1-6508RH 25mW/MHz 300ns HS9-6508RH PDF

    IC HS 8110

    Abstract: IC HS 8108 HS 8110 IC HS 8109 hs 8109 IC HS 8108 8 PIN HS 8108 1024x1 static ram
    Text: m H A R R HS-6514RH I S S E M I C O N D U C T O R Radiation Hardened 1024x1 CMOS RAM December 1992 Pinouts Features • Total Dose 1 x 105 RAD SI HS1-6514RH 18 PIN CERAMIC DIP CASE OUTLINE D-6, CONFIGURATION 3 • Data Upset > 1O0 RAD (SiVs TO P V IE W • Latch-Up Free To > 1 x 1012 RAD (Si)/s


    OCR Scan     		HS-6514RH 1024x1 HS1-6514RH 150ns HS9-6514RH IC HS 8110 IC HS 8108 HS 8110 IC HS 8109 hs 8109 IC HS 8108 8 PIN HS 8108 1024x1 static ram PDF

    AN 6518

    Abstract: 1024x1 static ram hm-6518 Z14H
    Text: HARRIS SEMICOND SECTOR 4bE ]> • HAS M3QS271 GGB'iOTO 1 HM-6518/883 HARRIS SEMICONDUCTOR t - 4 o -" Z _ 3 -o 5 1024x1 C M O S R A M January 1992 Features Description • This Circuit is Processed In Accordance to Mll-Std883 and Is Fully Conformant Under the Provisions of


    OCR Scan     		M3QS271 HM-6518/883 1024x1 HM-6518/883 volt35, GDIP1-T18 M302E71 DIP-460 AN 6518 1024x1 static ram hm-6518 Z14H PDF

    Intel mcs-40

    Abstract: intel 1101 2116 ram 5101 RAM transistor equivalenti Bipolar PROM programming Creative IC CT 1975 intel 3601 1702a eprom MCS-40
    Text: PRIC E 15 00 memory design handbook m in ia i O k p a r » lio n 1 0 7 7 INTRODUCTION The Intel Memory Design Handbook contains information on the use of Intel’s memory components and support circuits in system application. It is intended to aid the system designer to gain a thorough


    OCR Scan     		S-10380 CH-8021 /C-160/0577/50K Intel mcs-40 intel 1101 2116 ram 5101 RAM transistor equivalenti Bipolar PROM programming Creative IC CT 1975 intel 3601 1702a eprom MCS-40 PDF

    1024X1

    Abstract: 54C930 ET 3005 D100MU 1024x1 static ram
    Text: I MIL-M-38510/239B 4 September 1984 SUPERSEDING MIL-M-38510/239A USAF 19 January 1981 QUALIFICATION REQUIREMENTS REMOVED MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, CMOS 1024 BIT RANDOM ACCESS MEMORY (RAM), MONOLITHIC SILICON This specification 1s approved for use by all D e p a r t ­


    OCR Scan     		MIL-M-38510/239B MIL-M-38510/239A MIL-M-38510. 1024X1 54C930 ET 3005 D100MU 1024x1 static ram PDF

    MOSTEK 36000

    Abstract: 3861 mostek MK2408P MK2500P
    Text: CONTENTS I. Functional/Numerical Index II. Shift Registers III. Read Only Memories 16K ROMs 32K ROMs 64K ROMs Programmable ROMs Random Access Memories 4K Dynamic RAMs 16K Dynamic RAMs 4K Static RAMs IV. V. Application Information VI. Packaging VII. Reliability Information


    OCR Scan     		1002P 1007P 1007N MOSTEK 36000 3861 mostek MK2408P MK2500P PDF