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    1024X4 BIT RAM Search Results

    1024X4 BIT RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2903AFM/B Rochester Electronics LLC 2903A - Four-Bit Bipolar Microprocessor Slice Visit Rochester Electronics LLC Buy
    CDP1853CD/B Rochester Electronics LLC CDP1853CD - N-Bit 1 of 8 Decoder Visit Rochester Electronics LLC Buy
    2903ADM/B Rochester Electronics LLC 2903A - Four-Bit Bipolar Microprocessor Slice Visit Rochester Electronics LLC Buy
    93S16/BEA Rochester Electronics LLC 93S16 - BCD Decade/Four Bit Binary Counters Visit Rochester Electronics LLC Buy
    93S16DM/B Rochester Electronics LLC 93S16 - BCD Decade/Four Bit Binary Counters Visit Rochester Electronics LLC Buy

    1024X4 BIT RAM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    S2114

    Abstract: S211 2114L 2114 static ram RAM 2114 vmos S2114-1 S2114-2 S2114-3 S2114A-1
    Text: AMI S 2114 40 96 BIT 1024x4 STATIC V M O S RAM Features G eneral D escription □ High Speed Operation: Access Time: 150ns Maximum (-1 ) The AMI S2114 is a 4096 bit fully static RAM organ­ ized as 1024 words by 4 bits. The device is fully TTL compatible on all inputs and outputs and has a single


    OCR Scan     		S2114 1024x4) 150ns S211 2114L 2114 static ram RAM 2114 vmos S2114-1 S2114-2 S2114-3 S2114A-1 PDF

    K15S

    Abstract: No abstract text available
    Text: in t e i M2114A 1024x4 BIT STATIC RAM Military M2114AL-3 M2114AL-4 M2114A-4 M2114AL-5 Max. Access Time ns 150 200 200 250 Max. Current (mA) 50 50 70 70 HMOS Technology Directly TTL Compatible: All Inputs and Outputs Low Power, High Speed Common Data Input and Output Using


    OCR Scan     		M2114A 1024x4 M2114AL-3 M2114AL-4 M2114A-4 M2114AL-5 18-Pin M2114 4096-bit K15S PDF

    Untitled

    Abstract: No abstract text available
    Text: •> GOULD AM I Semiconductors Preliminary Data Sheet S6514 4096 BIT 1024x4 STATIC CMOS RAM Sep te m be r 1984 Features General Description □ □ □ □ □ □ □ □ The S 6 5 1 4 is a 4096 bit static C M O S R A M organized a s 1024 w o rd s by 4 bits per word. The device offers low


    OCR Scan     		S6514 1024x4) 18-Pin PDF

    MA5114

    Abstract: a8415
    Text: MA5114 MA5114 Radiation hard 1024x4 Bit Static RAM Replaces January 2000 version, DS3591-5.0 DS3591-5.1 July 2002 The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The design uses a 6 transistor cell and has full static operation with


    Original     		MA5114 1024x4 DS3591-5 MA5114 a8415 PDF

    MA5114

    Abstract: 17-18L
    Text: MA5114 MA5114 Radiation hard 1024x4 Bit Static RAM Replaces January 2000 version, DS3591-5.0 DS3591-5.1 July 2002 The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The design uses a 6 transistor cell and has full static operation with


    Original     		MA5114 1024x4 DS3591-5 MA5114 17-18L PDF

    Untitled

    Abstract: No abstract text available
    Text: MM2114/MM2114L Family 4096-Bit 1024x4 Static RAMs Maximum Access/Current MM211415L MM21142L MM211425L MM21143L MM2114L MM211415 MM2114* 2 MM211425 150 2 00 250 300 4 50 150 200 250 300 450 70 70 70 70 70 100 100 100 100 100 A c c e s s (T A V Q V - n s )


    OCR Scan     		MM2114/MM2114L 4096-Bit 1024x4) MM211415L MM21142L MM211425L MM21143L MM2114L MM211415 MM2114* PDF

    Untitled

    Abstract: No abstract text available
    Text: G E C P L E S S E Y «Asm S h M I < O \ I I ] ( ) K s Radiation Hard 1024x4 Bit Static RAM S10306FD S Issue 1.4 O cto ber 1990 Features A3 A4 Ai Ab A# AU • 3}im CMOS-SOS technology • Latch-up free • Fast access time 90ns typical • Total dose 10s rad (Si)


    OCR Scan     		1024x4 S10306FD 5x1010 1024x4bits PDF

    MA5114

    Abstract: DS3591-4
    Text: MA5114 MA5114 Radiation hard 1024x4 Bit Static RAM Replaces June 1999 version, DS3591-4.0 DS3591-5.0 January 2000 The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The design uses a 6 transistor cell and has full static operation with


    Original     		MA5114 1024x4 DS3591-4 DS3591-5 MA5114 PDF

    1024X4

    Abstract: S2114H
    Text: Im v w ADVANCED PRODUCT DESCRIPTION AI/rmlM S2114H 4 0 9 6 BIT 1024x4 HIGH SPEED STATIC VMOS RAM Features General Description □ High Speed O peration: Access T im e: 70ns M axim um □ High D ensity 18 Pin Package □ S in g le +5 V olt Pow er Supply


    OCR Scan     		S2114H 1024x4) S2114H 1024X4 PDF

    2114 static ram

    Abstract: ic 2114 RAM 2114 ci 2114 memory ic 2114 2114 2114 ram 2114 static ram ic memory 2114 P2114
    Text: 2114 4096 Bit 1024x4 NMOS Static RAM Ö M Ü f^ D IL FEATURES D E S C R IP T IO N • • • • • • • • The 2114 is a 4096-bit s ta tic R andom A cce ss M em ory organized 1024 w ord s x 4 bits. The s to ra g e c e lls and decode and co n tro l c irc u itry are c o m p le te ly s ta tic , th e re fo re no


    OCR Scan     		1024x4) 2114L) 4096-bit 2114L2 2114L3 2114L 2114 static ram ic 2114 RAM 2114 ci 2114 memory ic 2114 2114 2114 ram 2114 static ram ic memory 2114 P2114 PDF

    10074A

    Abstract: 1024X4 10474 10474AF 10474F
    Text: BIPOLAR MEMORY DIVISION MAY 1982 4096-BIT ECL RAM 1024x4 10474/10474A Preview DESCRIPTION FEATURES The 10474/10474A device is a 1024 w o rd s by 4 b its fu lly deco d e d R ea d /W rite Ran­ d om A cce ss M em ory, d e sig n e d fo r high speed scra tch pad, co n tro l and b u ffe r s to r­


    OCR Scan     		4096-BIT 1024x4) 10474/10474A 10474/10474A 0474A: 10074A 1024X4 10474 10474AF 10474F PDF

    16kx8 ram

    Abstract: 8096 microcontroller features rom 1024 1024x8 MSM6411B 8096 microcontroller serial ports MSC62408 MSC6458 NS400N seg lcd driver rom 512x4
    Text: • LINE-UP AND TYPICAL CHARACTERISTICS •- LINE-UP AND TYPICAL CHARACTERISTICS LOW POWER HIGH SPEED OLMS-50/60 SERIES PRODUCT NAME ROM OLMS-64/65 SERIES RAM POWER CONSUMP­ TION FEATURES RAM ROM MACHINE CYCLE FEATURES MSM6404 4000 x 8 256x4 952 nS I/O: 36


    OCR Scan     		OLMS-50/60 MSM5052 MSM5054 MSM5055 MSM5056 MSM6051 MSM63S2 MSM6351 MSM6353 120x4 16kx8 ram 8096 microcontroller features rom 1024 1024x8 MSM6411B 8096 microcontroller serial ports MSC62408 MSC6458 NS400N seg lcd driver rom 512x4 PDF

    ic 2114

    Abstract: 2114 static ram memory ic 2114 pin out
    Text: SEMI 2114 STATIC, TTL IN/OUT 1024x4 N-MOS RAM's FEATURES • 1024 words x 4 bits • Three access times 200, 300, and 450 nsec • Low operating power — 175 mW typical • Common output bus • Three-state output drivers • Fully STATIC — no clock or refresh


    OCR Scan     		1024x4 18-pin ic 2114 2114 static ram memory ic 2114 pin out PDF

    8086 hex code

    Abstract: interface 8254 with 8086 interfacing of lcd with 8086 CMOS 16-Bit Priority Encoder 8086 microprocessor serial communication 80286 microprocessor features microprocessors interface 8086 to 8253 8088 microprocessor pin 8086 microprocessor pin description 8254 8086
    Text: Micro P/C ICs 11 PRODUCT TREES ANALOG Selection Guides Data Communication . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11-2 UARTs/BRGs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		Memory/883 82C88 80C86/80C88, 82C89 12MHz 80C86/80C88 1-888-INTERSIL 8086 hex code interface 8254 with 8086 interfacing of lcd with 8086 CMOS 16-Bit Priority Encoder 8086 microprocessor serial communication 80286 microprocessor features microprocessors interface 8086 to 8253 8088 microprocessor pin 8086 microprocessor pin description 8254 8086 PDF

    4096 bit RAM

    Abstract: rom 1024x8
    Text: Delta39KTM And Quantum38KTM Dual-Port RAM Introduction The purpose of this application note is to provide information and instruction in implementing synchronous/asynchronous Dual-Port Random Access Memory DPRAM in Delta39K and Quantum38K ™ Complex Programmable Logic Devices


    Original     		Delta39KTM Quantum38KTM Delta39KTM Quantum38K Delta39K Delta39K 4096 bit RAM rom 1024x8 PDF

    2114 static ram

    Abstract: 2114-UCB L2114-2CB RAM 2114 L2114-3CE 2114-2CB semi 2114ucb L2114-2CE EMM Semi L2114UCB
    Text: • 1024 words x 4 bits • T h ree access times 200, 300, and 450 nsec • Low operating power — 175 m W typical • Standard pow er — 222 m W typical • Com mon output bus • Three-state output drivers • Fully S T A T IC — no clock or refresh


    OCR Scan     		1024x4 18-pin 2114 static ram 2114-UCB L2114-2CB RAM 2114 L2114-3CE 2114-2CB semi 2114ucb L2114-2CE EMM Semi L2114UCB PDF

    64Kx8 CMOS RAM

    Abstract: oki 80C88 256X4 CMOS RAM 4702 8089 bus oki 82c54 lcd 4x20 CSP-28 display lcd 4x20 interface 8254 with 8086
    Text: Digital ICs 7 2009 P RODUCT S ELECTION GUIDE Digital ICs pg. 7-1 Micro P/C (pg. 7-4) Demodulators (pg. 7-2) Parallel EEPROM (pg. 7-3) Data Communication (pg. 7-4) Digital Filters (pg. 7-2) Memory/883 (pg. 7-3) LCD and LED Display Drivers (pg. 7-4) Down Converters


    Original     		Memory/883 1-888-INTERSIL 82C52 16MHz Generator-72 HD-6402 64Kx8 CMOS RAM oki 80C88 256X4 CMOS RAM 4702 8089 bus oki 82c54 lcd 4x20 CSP-28 display lcd 4x20 interface 8254 with 8086 PDF

    cic filter for digital down converter

    Abstract: interface 8254 with 8086 8253 interface with 8086 Peripheral synchronization frame costas loop intersil 8253 6402 uart CMOS 16-Bit Priority Encoder
    Text: Digital 5 A NALOG S IGNAL P ROCESSING Digital pg. 5-1 MicroP/C (pg. 5-4) Memory (pg. 5-4) Down Converters (pg. 5-2) Parallel EEPROM (pg. 5-4) Data Communication (pg. 5-4) Up Converters (pg. 5-2) Memory/883 (pg. 5-4) UARTs/BRGs (pg. 5-5) Demodulators (pg. 5-2)


    Original     		Memory/883 1-888-INTERSIL 80C86/80C88 82C89 82C84A 25MHz 25MHz cic filter for digital down converter interface 8254 with 8086 8253 interface with 8086 Peripheral synchronization frame costas loop intersil 8253 6402 uart CMOS 16-Bit Priority Encoder PDF

    K6R1004C1B

    Abstract: K6R1004C1B-10 K6R1004C1B-12 K6R1004C1B-8
    Text: PRELIMINARY Preliminary PRELIMINARY CMOS SRAM K6R1004C1B-C Document Title 256Kx4 Bit with OE High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997


    Original     		K6R1004C1B-C 256Kx4 32-SOJ-400 K6R1004C1B K6R1004C1B-10 K6R1004C1B-12 K6R1004C1B-8 PDF

    KM641003B

    Abstract: KM641003B-10 KM641003B-12 KM641003B-8
    Text: PRELIMINARY Preliminary PRELIMINARY CMOS SRAM KM641003B Document Title 256Kx4 Bit with OE High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target


    Original     		KM641003B 256Kx4 32-SOJ-400 KM641003B KM641003B-10 KM641003B-12 KM641003B-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary PRELIMINARY CMOS SRAM K6R1004V1B-C Document Title 256Kx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0


    Original     		K6R1004V1B-C 256Kx4 32-SOJ-400 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary PRELIMINARY CMOS SRAM KM64V1003B Document Title 256Kx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0


    Original     		KM64V1003B 256Kx4 32-SOJ-400 PDF

    bk p36

    Abstract: 1024x1 static ram 16x4-Bit 4710B 4720B 4725B F16K3 F16K4 F16K5 M40272
    Text: •n fO «i MOS 4096x1 1024x4 4096x1 - M40272 16,384x1 CO ro 4096x1 -fck 4096x1 cn Item o 0 o Organization s o (O Ô o 3 a Description Access Time ns (Max Cycle Time ns (Min) Power Dissipation mW (Max) S A H > z o 2 > o o m CO 2 m 5 o X k k k k k oo O 03


    OCR Scan     		1024x4 F2114171 4096x1 M40272 M40273 M40274 M40275 bk p36 1024x1 static ram 16x4-Bit 4710B 4720B 4725B F16K3 F16K4 F16K5 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary PRELIMINARY CMOS SRAM KM64V1003B Document Title 256Kx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0


    Original     		KM64V1003B 256Kx4 32-SOJ-400 PDF