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    1024X8 MEMORY Search Results

    1024X8 MEMORY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    MC28F008-10/B Rochester Electronics LLC EEPROM, Visit Rochester Electronics LLC Buy
    HM3-6504B-9 Rochester Electronics LLC Standard SRAM, 4KX1, 220ns, CMOS, PDIP18 Visit Rochester Electronics LLC Buy
    HM1-6516-9 Rochester Electronics LLC Standard SRAM, 2KX8, 200ns, CMOS, CDIP24 Visit Rochester Electronics LLC Buy
    AM27C256-55DM/B Rochester Electronics AM27C256 - 256K (32KX8) CMOS EPROM Visit Rochester Electronics Buy

    1024X8 MEMORY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1024X8

    Abstract: tws 1000
    Text: d210002 1024X8, Mux 16, Drive 3, Non-Pipelined High-Speed Single-Port Synchronous SRAM Features Memory Description • Precise Optimization for Infineon’s C9DD1 0.20µm The 1024X8 SRAM is a high-performance, synchronous single-port, 1024-word by 8-bit memory designed to


    Original     		PDF d210002 1024X8, 1024X8 1024-word 61mm2 HS300-SS 99Q3P0 tws 1000

    82S181/BJA

    Abstract: 82S181 1024x8 PROM
    Text: Philips Semiconductors Military Bipolar Memory Products Product specification 8K-bit TTL bipolar PROM 1024x8 82S181 FEATURES DESCRIPTION • Address access time: 90ns max • Input loading: -150µA max • On-chip address decoding • Four chip enable inputs


    Original     		PDF 1024x8) 82S181 82S181 500ns 82S181/BJA 1024x8 PROM

    82S181A

    Abstract: 82S181A/B3A
    Text: Philips Semiconductors Military Bipolar Memory Products Product specification 8K-bit TTL bipolar PROM 1024x8 82S181A FEATURES DESCRIPTION • Address access time: 55ns max • Input loading: -150µA max • On-chip address decoding • Four chip enable inputs


    Original     		PDF 1024x8) 82S181A 82S181A 500ns 82S181A/B3A

    25c08v

    Abstract: 25C16LI CAT25160 25C16VI 25C08 25C16 AEC-Q100 CAT25C08 CAT25C16 25C08L
    Text: Not Recommended for New Design, Replace with CAT25080/CAT25160 CAT25C08, CAT25C16 8K/16K SPI Serial CMOS EEPROM FEATURES DESCRIPTION • 10 MHz SPI compatible The CAT25C08/16 is a 8K/16K Bit SPI Serial CMOS EEPROM internally organized as 1024x8/2048x8 bits.


    Original     		PDF CAT25080/CAT25160 CAT25C08, CAT25C16 8K/16K CAT25C08/16 1024x8/2048x8 CAT25C08/ 32-byte CAT25C08/or 25c08v 25C16LI CAT25160 25C16VI 25C08 25C16 AEC-Q100 CAT25C08 CAT25C16 25C08L

    eeprom 25080

    Abstract: 25080 948AL CAT25080 CAT25160 Q100 25080 eeprom 1024x8
    Text: CAT25080, CAT25160 8-Kb and 16-Kb SPI Serial CMOS EEPROM Description The CAT25080/25160 are 8−Kb/16−Kb Serial CMOS EEPROM devices internally organized as 1024x8/2048x8 bits. They feature a 32−byte page write buffer and support the Serial Peripheral Interface


    Original     		PDF CAT25080, CAT25160 16-Kb CAT25080/25160 8-Kb/16-Kb 1024x8/2048x8 32-byte CAT25080/25160 751BD 517AW eeprom 25080 25080 948AL CAT25080 CAT25160 Q100 25080 eeprom 1024x8

    25c08v

    Abstract: 25C16VI 25C16V cat25c08 25Y08 24C168
    Text: CAT25C08, CAT25C16 8K/16K SPI Serial CMOS EEPROM FEATURES DESCRIPTION • 10 MHz SPI compatible The CAT25C08/16 is a 8K/16K Bit SPI Serial CMOS EEPROM internally organized as 1024x8/2048x8 bits. Catalyst’s advanced CMOS Technology substantially reduces device power requirements. The CAT25C08/


    Original     		PDF CAT25C08, CAT25C16 8K/16K 32-byte CAT25C08/16 1024x8/2048x8 CAT25C08/ 25c08v 25C16VI 25C16V cat25c08 25Y08 24C168

    25160D

    Abstract: s08d 25080D CAT25080YE-G eeprom 25080 UDFN8 254
    Text: CAT25080, CAT25160 8-Kb and 16-Kb SPI Serial CMOS EEPROM Description The CAT25080/25160 are 8−Kb/16−Kb Serial CMOS EEPROM devices internally organized as 1024x8/2048x8 bits. They feature a 32−byte page write buffer and support the Serial Peripheral Interface


    Original     		PDF CAT25080, CAT25160 16-Kb CAT25080/25160 8-Kb/16-Kb 1024x8/2048x8 32-byte 751BD 517AW 25160D s08d 25080D CAT25080YE-G eeprom 25080 UDFN8 254

    25160D

    Abstract: eeprom 25080
    Text: CAT25080, CAT25160 8-Kb and 16-Kb SPI Serial CMOS EEPROM Description The CAT25080/25160 are 8−Kb/16−Kb Serial CMOS EEPROM devices internally organized as 1024x8/2048x8 bits. They feature a 32−byte page write buffer and support the Serial Peripheral Interface


    Original     		PDF CAT25080, CAT25160 16-Kb CAT25080/25160 8-Kb/16-Kb 1024x8/2048x8 32-byte 751BD 517AW 25160D eeprom 25080

    25160D

    Abstract: eeprom 25080 25080 eeprom
    Text: CAV25080, CAV25160 8-Kb and 16-Kb SPI Serial CMOS EEPROM Description The CAV25080/25160 are 8−Kb/16−Kb Serial CMOS EEPROM devices internally organized as 1024x8/2048x8 bits. They feature a 32−byte page write buffer and support the Serial Peripheral Interface


    Original     		PDF CAV25080, CAV25160 16-Kb CAV25080/25160 8-Kb/16-Kb 1024x8/2048x8 32-byte 751BD 948AL 25160D eeprom 25080 25080 eeprom

    Untitled

    Abstract: No abstract text available
    Text: Am27S35/Am27S37 8,192-Bit 1024x8 Bipolar Registered PROM with Programmable INITIALIZE Input Versatile programmable asynchronous or synchronous enable for simplified word expansion Buffered common INITIALIZE input either asynchronous (Am27S35) or synchronous (Am27S37)


    OCR Scan     		PDF Am27S35/Am27S37 192-Bit 1024x8) 24-pin, 300-mil Am27S35 Am27S37

    64X128

    Abstract: 53RS881 53RS881A 63RS881 63RS881A 1024X8
    Text: 53/63RS881/A Advanced Micro Devices High Performance 1024x8 Registered PROM FEATURES/BENEFITS APPLICATIONS • Edge triggered “D" registers • Microprogram control store • Synchronous and asynchronous enables • State sequencers • Versatile 1:16 initialization words


    OCR Scan     		PDF 53/63RS881/A 1024x8 24-pln 53/63RS881 53/63RS881A -30pF. 64X128 53RS881 53RS881A 63RS881 63RS881A

    Untitled

    Abstract: No abstract text available
    Text: A m 2130 1024x8 Dual-Port Static Random-Access Memory PRELIMINARY DISTINCTIVE CHARACTERISTICS • • • • • BUSY function to handle contention - Open drain for OR-tied operation Automatic power down CE Output Enable function (5E) Both ports operate independently


    OCR Scan     		PDF 1024x8 70-ns Am2130 8192-Bit MIL-STD-883,

    27S181

    Abstract: No abstract text available
    Text: Am27Sl80/27S181/PS181 Am27S280/27S281/PS281 8,192-Bit 1024x8 Bipolar PROM > 3 DISTINCTIVE CHARACTERISTICS • • Fast access time allows high system speed 50% power savings on deselected parts — enhances reliability through total system heat reduction


    OCR Scan     		PDF Am27Sl80/27S181/PS181 Am27S280/27S281/PS281 192-Bit 1024x8) Am27S180/27S181 Am27S180 Am27S181 300-mil. Am27S280/27S281 Am27PSl81/27PS281 27S181

    Untitled

    Abstract: No abstract text available
    Text: a 53/63S881/A Advanced Micro Devices High Performance 1024x8 PROM TiW PROM Family FEATURES/BENEFITS APPLICATIONS • 30-ns maximum access time • Microprogram control store • Reliable titanium-tungsten fuses TIW guaran­ tee greater than 98% programming yields


    OCR Scan     		PDF 53/63S881/A 1024x8 30-ns 24-pln 600-mil 53/63S881 53/63S881A

    723CL

    Abstract: AM27S281PC 27s181 AM27S181 27S181A AM27S181PC AM27S181A 27S281
    Text: Am27S181 /27S181A Am27S281 /27S281A 8,192-Bit 1024x8 Bipolar PROM Devices DISTINCTIVE CHARACTERISTICS • Fast access time allows high system speed • 50% power savings on deselected parts — enhances reliability through total system heat reduction • Platinum-Silicide fuses guarantee high reliability, fast


    OCR Scan     		PDF Am27S181 /27S181A Am27S281 /27S281A 192-Bit 1024x8) TC003441 TC003452 KS000010 723CL AM27S281PC 27s181 27S181A AM27S181PC AM27S181A 27S281

    M2130

    Abstract: No abstract text available
    Text: Am2130/Am2140 AdVM“ o 1024x8 Dual-Port Static Random-Access Memories Devices DISTINCTIVE CHARACTERISTICS True dual port operation Access time as fast as 55 ns Master device Am2130 has on-chip arbitration Expandable data bus width in multiples of 8 bits using


    OCR Scan     		PDF Am2130/Am2140 1024x8 Am2130) Am2140) 48-pin 52-pin Am2130 Am2140 M2130

    53S881

    Abstract: 53S881A 63S881 63S881A 1024x8 PROM MEQ1 e2723
    Text: a 53/63S881/A Advanced Micro Devices High Performance 1024x8 PROM TiW PROM Family FEATURES/BENEFITS APPLICATIONS • 30-ns maximum access time • Reliable titanium-iungsten fuses TIW guaran­ tee greater than 98% programming yields • Low voltage generic programming


    OCR Scan     		PDF 53/63S881/A 1024x8 30-ns 24-pln 600-mil 53/63S881 53/63S881A 53S881 53S881A 63S881 63S881A 1024x8 PROM MEQ1 e2723

    1024x8 PROM

    Abstract: No abstract text available
    Text: c, MmoHMb m Memories High Performance 1024x8 PROM 5 3 /6 3 S 8 8 0 5 3 /6 3 S 8 8 1 5 3 /6 3 S 8 8 1 A / / / / / / / / / ////////////////////////////////////A DVA NCE INFORMATION Features/ Benefits Applications • 8192-blt memory • Microprogram control stores


    OCR Scan     		PDF 1024x8 8192-blt 128x64 1024x8 PROM

    1024x8 PROM

    Abstract: No abstract text available
    Text: 53/63RS881/A Advanced Micro Devices High Performance 1024x8 Registered PROM FEATURES/BENEFITS APPLICATIONS • Edge triggered “D” registers • Microprogram control store • Synchronous and asynchronous enables • State sequencers • Versatile 1:16 Initialization words


    OCR Scan     		PDF 53/63RS881/A 1024x8 24-pln 53/63RS881 53/63RS881A 1024x8 PROM

    AM27S181

    Abstract: 27s181 27s181a AM27S181/BJA AM27S181A CERAMIC LEADLESS CHIP CARRIER LCC 24 AM27S181PC
    Text: Am27S181/27S181A Am27S281/27S281A 8,192-Bit 1024x8 Bipolar PROM Devices DISTINCTIVE CHARACTERISTICS • Fast access time allows high system speed • 50% power savings on deselected parts — enhances reliability through total system heat reduction • Platinum-Silicide fuses guarantee high reliability, fast


    OCR Scan     		PDF Am27S181 /27S181A Am27S281 /27S281A 192-Bit 1024x8) TC003441 TC003452 KS000010 27s181 27s181a AM27S181/BJA AM27S181A CERAMIC LEADLESS CHIP CARRIER LCC 24 AM27S181PC

    S2152

    Abstract: No abstract text available
    Text: AMI _S2000/S2150/A/S2152 AMERICAN MICROSYSTEMS, SINGLE-CHIP MICROCOMPUTERS Features □ □ □ □ □ □ □ □ 1024X8 Program ROM On-Chip; Externally Expandable to 8192X 8—S2000 1536X 8 Program ROM On-Chip; Externally Expandable to 8192X8—S2150


    OCR Scan     		PDF S2000/S2150/A/S2152 1024X8 8192X S2000 1536X 8192X8â S2150 S2000/S2150 S2152

    5218 chip ic

    Abstract: 53S881F
    Text: ADV M IC R O 14‘ E D I MEMORY 0257555 0027871 a 2 5 53/63S881/A Advanced Micro Devices High Performance 1024x8 PROM TiW PROM Family FEATURES/BENEFITS T APPLICATIONS • 30-ns maximum access time • Microprogram control store • Reliable tltanlum-tungsten fuses TiW guaran­


    OCR Scan     		PDF 53/63S881/A 1024x8 30-ns 24-pin 600-mil 53/63S881 53/63S881A 30pFA 5218 chip ic 53S881F

    AM27S181

    Abstract: 27S181
    Text: Am27S181 /27S181A Am27S281 /27S281A Advanced Micro Devices 8,192-Bit 1024x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • Platinum-Silicide fuses guarantee high reliability, fast programming and exceptionally high programming yields (typ > 98%) Rapid recovery from power-down state provides mini­


    OCR Scan     		PDF Am27S181 /27S181A Am27S281 /27S281A 192-Bit 1024x8) /27S181A Am27S281/27S281A 27S181

    AM27S35

    Abstract: AM27S35A AM27S37 AM27S37A CD3024 PD3024
    Text: Am27S35/S35A/Am27S37/S37A 1H rt Advanced Micro Devices 8 ,1 92-Bit 1024x8 Bipolar Registered PROM with Programmable INITIALIZE Input DISTINCTIVE CHARACTERISTICS • • Slim, 24-pin, 300-mil lateral center package occupies approximately 1 /3 the board space required by standard


    OCR Scan     		PDF Am27S35/S35A/Am27S37/S37A 192-Bit 1024x8) 24-pin, 300-mil Am27S35 Am27S37 WF021601 AM27S35A AM27S37A CD3024 PD3024