LM 3041
Abstract: 2N325 2N326 TRANSISTOR C 2026 c 2026 y transistor MC 340 transistor c 3076
Text: I . I .“~ . MILITARY SEMICONDUCTOR DEVICE, SPECIFICATION TRANSJSIT3R, TYPE NPN, GERMANIUM, POWSR ,. 2N326 This 5Pedification is mandatory for use by all Departments and Agencies of lhe Department of Defense. 1. sCOPE 1.1 transistor. 1 This specilic.l ion cover.
|
Original
|
PDF
|
2N326
5961-0021-s)
LM 3041
2N325
2N326
TRANSISTOR C 2026
c 2026 y transistor
MC 340 transistor
c 3076
|
TH3L10
Abstract: c 4235 transistor npn transistor c 4236 TH3L10 datasheet TH5P4 TH3L10 ic 883 transistor 2SC4310 tk3l10 2SA1795
Text: HIGH VOLTAGE • HIGH SPEED SWITCHING TRANSISTORS HDT series ITO-220 Bipolar transistors NPN Absolute Maximum Ratings VCEO VEBO IC IB PT Tstg TJ VCEO (sus) (min) [V] [V] [V] [A] [A] [W] [˚C] [˚C] [V] 6 3 10 15 4 6 800 7 hFE (min) VCE (sat) (max) VBE (sat)
|
Original
|
PDF
|
ITO-220
2SC4310
O-220
TH3L10
c 4235 transistor npn
transistor c 4236
TH3L10 datasheet
TH5P4
TH3L10 ic
883 transistor
2SC4310
tk3l10
2SA1795
|
TRANSISTOR 2n65s
Abstract: 2N65S 2N498 2N657 transistor 2N656 ad 303 transistor 2N856 2N497 2N656 transistor afr 22
Text: ➤ ✌ ✍✚ —. ‘“”-”” — MIL-s-19500/74E 17 Wtober l’dLi7 SUPSRSED2NT MIL-S-19500/74D 20 March 1964 See 6.3 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, MEDIUM- POWER, TYPES 2N497, 2N498, 2N656, AND 2N657 This specification
|
Original
|
PDF
|
MIL-s-19500/74E
MIL-S-19500/74D
2N497,
2N498,
2N656,
2N657
2N656
TRANSISTOR 2n65s
2N65S
2N498
2N657
transistor 2N656
ad 303 transistor
2N856
2N497
2N656
transistor afr 22
|
2N3442
Abstract: MIL-PRF19500 JANTX 2222 2N3442 JAN transistor d 331 data
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 05 November 1999. INCH-POUND MIL-PRF-19500/370D 05 August 1999 SUPERSEDING MIL-S-19500/370C 25 September 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER
|
Original
|
PDF
|
MIL-PRF-19500/370D
MIL-S-19500/370C
2N3442,
MIL-PRF-19500.
2N3442
MIL-PRF19500
JANTX 2222
2N3442 JAN
transistor d 331 data
|
2N2708
Abstract: No abstract text available
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 November 1999 INCH-POUND MIL-PRF-19500/302C 1 August 1999 SUPERSEDING MIL-S-19500/302B 20 January 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN,
|
Original
|
PDF
|
MIL-PRF-19500/302C
MIL-S-19500/302B
2N2708,
MIL-PRF-19500.
T0-72)
2N2708
|
LT1026
Abstract: LT1026C LT1026CH LT1026I LT1026M LT1026MH LT1054 1026I
Text: LT1026 Voltage Converter U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ Generates + and – from Single Input Up to ±18V Output Only Needs Four 1µF Capacitors No Inductors 10mA Output Current Minimum Operates Down to 4V No Latchup 8-Pin Minidip The LT 1026 is a switched capacitor voltage doubler and
|
Original
|
PDF
|
LT1026
LT1026
LTC1517-5
OT-23
LTC1550/LTC1551
900kHz,
LTC1555/LTC1556
1026fa
LT1026C
LT1026CH
LT1026I
LT1026M
LT1026MH
LT1054
1026I
|
LT1026
Abstract: lt1044 LT1026C LT1026CH LT1026CJ8 LT1026I LT1026MH LT1026MJ8 inverter voltage
Text: LT1026 Voltage Converter U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1026 is a switched capacitor voltage doubler and inverter on a single monolithic die. Capable of operating from a 4V to 10V input, it provides ±7V to ±18V output. Output currents of over 10mA are available. Two charge
|
Original
|
PDF
|
LT1026
LT1026
100mA/125mA,
LTC1517-5
OT-23
LTC1550/LTC1551
900kHz,
LTC1555/LTC1556
lt1044
LT1026C
LT1026CH
LT1026CJ8
LT1026I
LT1026MH
LT1026MJ8
inverter voltage
|
Untitled
Abstract: No abstract text available
Text: LT1026 Voltage Converter FEATURES • ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LT 1026 is a switched capacitor voltage doubler and inverter on a single monolithic die. Capable of operating from a 4V to 10V input, it provides ±7V to ±18V output. Output currents of over 10mA are available. Two charge
|
Original
|
PDF
|
LT1026
LT1026
100mA/125mA,
LTC1517-5
OT-23
LTC1550/LTC1551
900kHz,
LTC1555/LTC1556
|
1D SOT 23-6
Abstract: SOT-23 m1e MMBTA42LT1G
Text: MMBTA42LT1, MMBTA43LT1 MMBTA42LT1 is a Preferred Device High Voltage Transistors NPN Silicon Features http://onsemi.com • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish COLLECTOR 3 MAXIMUM RATINGS Rating Symbol MMBTA42
|
Original
|
PDF
|
MMBTA42LT1,
MMBTA43LT1
MMBTA42LT1
MMBTA42
MMBTA43
OT-23
O-236)
1D SOT 23-6
SOT-23 m1e
MMBTA42LT1G
|
C-48U
Abstract: 2N3739 QML-19500 C48U TO-66 CASE 614
Text: This documentation process conversion measures necessary to comply with this revision shall be completed by 30 October 1999. INCH-POUND MIL-PRF-19500/402C 30 August 1999 SUPERSEDING MIL-S-19500/402B 8 April 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER
|
Original
|
PDF
|
MIL-PRF-19500/402C
MIL-S-19500/402B
2N3739
MIL-PRF-19500.
C-48U
2N3739
QML-19500
C48U
TO-66 CASE 614
|
diode cc 3053
Abstract: cc 3053 diode 2N6383 2N6384 2N6385 MIL-PRF19500 K 3053 TRANSISTOR
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 10 November 1999. INCH-POUND MIL-PRF-19500/523B 10 August 1999 SUPERSEDING MIL-S-19500/523A 21 July 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, POWER
|
Original
|
PDF
|
MIL-PRF-19500/523B
MIL-S-19500/523A
2N6383,
2N6384,
2N6385,
MIL-PRF-19500.
diode cc 3053
cc 3053 diode
2N6383
2N6384
2N6385
MIL-PRF19500
K 3053 TRANSISTOR
|
2N5302
Abstract: 2N5303 MIL-PRF19500 2n5302 transistor
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 29 October 1999. MIL-PRF-19500/456D 29 July 1999 SUPERSEDING MIL-S-19500/456C 18 November 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER
|
Original
|
PDF
|
MIL-PRF-19500/456D
MIL-S-19500/456C
2N5302
2N5303,
MIL-PRF-19500.
2N5303
MIL-PRF19500
2n5302 transistor
|
PU421
Abstract: 1026A PS 1025A PU3113 PU3213 PU4113 PU4213 PU4413 PU4513 6 "transistor arrays" ic
Text: Power Transistor Arrays P U 3213, P U 4213, P U 4513 PU3213, PU4213, PU4513 P a c k a g e D im e n s io n s PU3213 P o w e r A m p lifier, S w itch in g C o m p le m e n ta ry P a ir with P U 3 1 1 3 , P U 4 1 1 3 , P U 4 4 1 3 • F e a tu re s • • •
|
OCR Scan
|
PDF
|
PU3213,
PU4213,
PU4513
PU3113,
PU4113,
PU4413
PU3213:
PU421
1026A
PS 1025A
PU3113
PU3213
PU4113
PU4213
PU4413
PU4513
6 "transistor arrays" ic
|
FMG6
Abstract: J200M
Text: ROHM CO LTD h7 MOE D Bl TfiSÖ'm GQ0b324 T B R H H //Transistors . " "• " ~ S w S W 'O FMG6 y~-yj. 9 0 * > / * - * K ^ -T /ty In v e rte r Driver Epitaxial Planar Dual Mini-Mold NPN Silicon Transistor •m • Wf2\fji£!§I/Dimensions U n it: mm
|
OCR Scan
|
PDF
|
GQ0b324
J200mWS
200mW
100MHz
FMG6
J200M
|
|
|
Untitled
Abstract: No abstract text available
Text: FMG6 h "7 > v 7, £ / I ransistors FlU IO ft if $ ^ '> 7 ^ 7 V - t f f ^ T : i 7 Ji ^ - :E - ; i ' K N P N y 'J a > -f — $ K v -f/V ln v e rte r Driver Epitaxial Planar Dual Mini-Mold NPN Silicon Transistor • fl-JK\tD±H/Dimensions Unit : mm 1) X - n - 5 - E - J L KM"-y >y-V T'
|
OCR Scan
|
PDF
|
100MHz
|
transistor t06
Abstract: transistor t06 19 T06 transistor
Text: Philips Semiconductors Product specification PNP switching transistor PMSS3906 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V). DESCRIPTION 1 APPLICATIONS base 2 emitter 3 collector • Switching in e.g. telephony and professional
|
OCR Scan
|
PDF
|
PMSS3906
SC-70;
OT323
PMSS3904.
PMSS3906
OT323)
transistor t06
transistor t06 19
T06 transistor
|
Untitled
Abstract: No abstract text available
Text: Power Transistors Hometaxial-Base n-p-n Type Selection Charts h“FE A V CE V Temp.—°C 25 CD 'c V CEV^SUS* V 40 40 40 40 55 55 55 65 140 60 60 60 60 100 100 100 90 160 20-60 35-100 20-80 25-100 20-60 35-100 35-100 30-125 30-125 0.2 0.2 0.1 0.45 0.2 0.2
|
OCR Scan
|
PDF
|
2N1482/40349
2N1482)
2N1700
2N1482®
O-39/TO-205MD
92CS--24062
|
rca 40411
Abstract: RCA 40251 2N3055 386 RCA rca 2N3771 power circuit 3771 E1 BD182 rca 2n 3055 BD181 rcs258 rca 40363
Text: Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont’d V CEO(sus) V •c V C E V *SUS* V \ Z ç £ { s a t )—V 'C E X - mA h FE Temp.—°C V CE V A 25 2N3055 (Hometaxial) FA M ILY (n-p-n) Hometaxial-Base, General Purpose f j = 0.8 M H z min; P j to 150 W max
|
OCR Scan
|
PDF
|
2N3055
2N6371
BD142
2N6253
BD181
BD182
2N6254
BD183
BD450
BD451
rca 40411
RCA 40251
2N3055 386 RCA
rca 2N3771 power circuit
3771 E1
BD182 rca
2n 3055
rcs258
rca 40363
|
radiator 0,019
Abstract: 2n5578
Text: •■i ■1 Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont’d hFE \ / a w~ (CMC1 CEO V CEX V VcE^^- V 'C E X -m A ' ‘c A V CE V Tem p.—°C 25 V CE V •c A 2N5578 FAMILY (n-p-n) High Current, High Power f y = 0.4 MHz min; P y = 300 W max
|
OCR Scan
|
PDF
|
2N5578
2N5575
2N5786
2N5783
2N5785
O-39/TO-205MD
O-5/TO-205M
2N6103
radiator 0,019
|
2n3054
Abstract: 40349
Text: Power Transistors Hometaxial-Base n-p-n Type Selection Charts h“FE A V CE V Temp.—°C 25 CD 'c V CEV^SUS* V 40 40 40 40 55 55 55 65 140 60 60 60 60 100 100 100 90 160 20-60 35-100 20-80 25-100 20-60 35-100 35-100 30-125 30-125 0.2 0.2 0.1 0.45 0.2 0.2
|
OCR Scan
|
PDF
|
2N1482/40349
2N1482)
2N1700
2N1482®
O-39/TO-205MD
92CS-2022Î
2n3054
40349
|
1026A
Abstract: PU4213 PU3113 PU3213 PU4113 PU4413 PU4513 101025 1026 npn transistor
Text: Power Transistor Arrays PU3213, PU4213, PU4513 Silicon NPN Epitaxial Planar Type P U 3 2 1 3 , P U 4 2 1 3, P U 4 5 1 3 Package Dimensions PU3213 Power Amplifier, Switching Complementary Pair with PU3113, PU4113, PU4413 • Features 0.810.25^ 3fl-“0.5±0.15
|
OCR Scan
|
PDF
|
PU3213,
PU4213,
PU4513
PU3113,
PU4113,
PU4413
PU3213:
1026A
PU4213
PU3113
PU3213
PU4113
PU4413
PU4513
101025
1026 npn transistor
|
BFT65
Abstract: transistor bft65 f451 61 SIEMENS 25813
Text: SIEMENS BFT 65 NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFT 65 Marking BFT 65 Pin Configuration
|
OCR Scan
|
PDF
|
BFT65
BFT65
Q62702-F451
fl235bDS
transistor bft65
f451
61 SIEMENS
25813
|
2N1016B
Abstract: 2N1016D 2N1016C transistor kc 2026 102A MC 3041 2N1016 kc 2026
Text: MIL SP E C S IC|ODDOiaS OODObTl 4 |~ M IL-S-19500/102A 29 December 1966 ' SUPERSEDING M IL -S-19500/102 NAVY 19 July 1962 (See 6 .2) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTORS, NPN, SILICON, HIGH-POWER TYPES 2N1016B, 2N1016C, AND 2N1016D This specification is mandatory for u se by a ll Depart
|
OCR Scan
|
PDF
|
MIL-S-19500/102A
MIL-S-19500/102
2N1016B,
2N1016C,
2N1016D
2N1016B
2N1016C
2N1016D
MIL-S-19500,
transistor kc 2026
102A
MC 3041
2N1016
kc 2026
|
2N389
Abstract: 2N424 l73a AAZ marking
Text: i c | 00001B5 HIL SPECS DOOltjfll b | MIL-S-1950 0 /17 3 A 24 November 1964-_ SUPERSEDING MIL-S-19500/1 7 3 NAVY 7 April 1961 MILITARY SPECIFICATION TRANSISTOR, NPN, SILICON TYPES 2N389 AND 2N424 This specification Is mandatory for use by all Departments and
|
OCR Scan
|
PDF
|
MIL-S-19500/173A
MIL-S-I95OO/173
2N389
2N424
MIL-S-19500
T0-53)
2N424
l73a
AAZ marking
|
