Contextual Info: BUZ 102SL-4 Preliminary data SIPMOS Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type VDS ID RDS on Package Ordering Code BUZ 102SL-4 55 V 6.2 A 0.033 Ω P-DSO-28 C67078-S. . . .- . . Maximum Ratings

DIODE BUZ smd

Abstract: Q67040-S4010-A5 s4010 BUZ102SL E3045 Q67040-S4010-A2 102SL
Contextual Info: BUZ 102SL Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.015 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 47 A • Logic Level • dv/dt rated • 175 ˚C operating temperature

DIODE S4 62a

Abstract: siemens 230 98 O transistor Buz 11 siemens EC 230 98 diode zd 37
Contextual Info: SIEMENS BUZ 102SL-4 Preliminary data SIPMOS Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type ^DS BUZ 102SL-4 55 V 6.2 A ffDS on Package Ordering Code 0.033 £1 P-DSO-28 C67078-S. . . . . . .

BUZ102SL

Abstract: E3045 Q67040-S4010-A2 TO-92 44E BUZ 1025 marking t54 SMD DIODE gg 45 diode smd marking BUZ
Contextual Info: 102SL Infineon te c h n o lo g ie } » m p f°v e d Features Product Summary • N channel Drain source voltage Vbs • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current f l DS on 0.015 n 47 A t> V 55 • Logic Level

BUZ MOSFET

Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8

BUZ MOSFET

Abstract: Mosfet 1 cell switch low voltage low resistance SIEMENS MOSFET application
Contextual Info: Higher Cell Density, More Rugged Design MOS-based power semiconductors in S-FET technology can switch currents from a few milliamperes up to several hundred amperes at a voltage of 55 V. Extremely short source lengths make them commutation-proof and more resistant to avalanche breakdowns. At the

Dual N- AND P-Channel Power FET TO-220 PACKAGE

Abstract: 100S 101S 102S 103S 104S buz102 TRANSISTOR BSP 2000 smd transistor fh p-channel fet to-220
Contextual Info: Power semiconductors Higher cell density, more rugged design MOS-based power semiconductors in S-FET technology can switch currents from a few milliamperes up to several hundred amperes at a voltage of 55 V. Extremely short source lengths make them commutationproof and more resistant to avalanche breakdowns. At the same time, their specific drain-source on

102SLF

Contextual Info: 90º HYBRID SURFACE MOUNT MODEL: DQS-30-450LF 30 - 450 MHz FREQUENCY BANDWIDTH FEATURES: ► Ultra-Wide Bandwidth 15:1 ► Small Package Size, Surface Mount ► RoHS Compliant SPECIFICATIONS Frequency 30 - 450 MHz Insertion Loss (dB) Amplitude Unbalance (dB)

Contextual Info: 90º HYBRID SURFACE MOUNT MODEL: DQS-100-1000 100 - 1000 MHz Frequency BANDWIDTH FEATURES: ► Ultar-Wide Bandwidth 10:1 ► Small Package Size ► Building Block For: - Power Amplifiers - Image Rejection Mixers - I & Q / SSB Modulators - Phase Shifters & More.

Contextual Info: O P JEK Product Bulletin OP290 April 1993 GaAIAs Plastic Infrared Emitting Diodes Types OP29Q, OP291, OP292 Series .3 1 0 7 .8 7 _ .0 4 0 ( 1 .0 2 ) .2 9 0 ( 7 . 3 7 ) (N O T E 11) .1 0 0 ( 2 .5 4 ) NOM CATHODE M EAS U R EM EN T SU R FAC E • (N O T E 8)

BUZ MOSFET

Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
Contextual Info: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package

package Synergy Microwave

Contextual Info: - PROPRIETARY INFORMATION - 90º HYBRID SURFACE MOUNT MODEL: DQS-30-450LF 30 - 450 MHz FREQUENCY BANDWIDTH FEATURES: ► Ultra-Wide Bandwidth 15:1 ► Small Package Size, Surface Mount ► RoHS Compliant SPECIFICATIONS Frequency 30 - 450 MHz Insertion Loss (dB)