1030mhz
Abstract: No abstract text available
Text: JXWBDRO-T-1030-10 1030MHz DRO Test report is for reference only. TEST REPORT For JXWBDRO-T-1030-10 Page 1 JXWBDRO-T-1030-10 1030MHz DRO Technical Specification 1030 Center Frequency MHz ±5 Temperature Stability(ppm /°C) -100 @ 10KHz Phase Noise(dBc) -120 @ 100KHz
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JXWBDRO-T-1030-10
1030MHz
10KHz
100KHz
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1030mhz
Abstract: 1030 mhz 1030
Text: JXWBDRO-T-1030 1030MHz DRO Test report is for reference only. TEST REPORT for JXWBDRO-T-1030 Page 1 JXWBDRO-T-1030 1030MHz DRO Technical Specification 1030 Center Frequency MHz ±5 Temperature Stability(ppm /°C) -100 @ 10KHz Phase Noise(dBc) -120 @ 100KHz
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JXWBDRO-T-1030
1030MHz
10KHz
100KHz
05Around
1030 mhz
1030
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1030mhz
Abstract: 1030
Text: JXWBDRO-T-1030 1030MHz DRO Test report is for reference only. TEST REPORT for JXWBDRO-T-1030 1 JXWBDRO-T-1030 1030MHz DRO Technical Specification 1030 Center Frequency MHz ±5 Temperature Stability(ppm /°C) -100 @ 10KHz Phase Noise(dBc) -120 @ 100KHz DC Supply(V)
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JXWBDRO-T-1030
1030MHz
10KHz
100KHz
05Around
1030
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hvv1011
Abstract: HV400 Radar Transponder HV800 SM200 1030 HVV1011-300 rf power transistors
Text: Product Selection Guide Avionics RF Power Transistors For IFF, TCAS, Transponder/Interrogator Applications Pulse Width = 50us, Duty Cycle = 2% PART NUMBER HVV1011-035 HVV1011-300 HVV1011-600 FREQUENCY (MHz) 1030-1090 1030-1090 1030-1090 VDD (V) 50 50 50
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HVV1011-035
HVV1011-300
HVV1011-600
SM200
HV400
HV800
hvv1011
HV400
Radar Transponder
HV800
SM200
1030
HVV1011-300
rf power transistors
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CF06V
Abstract: CF04T2-1575-XX 897 1747 CF12T3-1030 CF12T4-1030-XX CF06V3 smd 1472 CF04T3-870-XX CF04V 1030 mhz
Text: BANDPASS CERAMIC COAXIAL FILTERS Electrical specifications MICROWAVE GENERAL ELECTRICAL SPECIFICATIONS Model CF06T6-301-XX CF06T3-420-XX CF06S6-FFF-XX CF04T3-870-XX CF06T3-897-XX CF06T6-905-XX CF06T4-915-XX CF06T3-947-XX CF12T2-1030-XX CF06T3-1030-XX CF12T4-1030-XX
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CF06T6-301-XX
CF06T3-420-XX
CF06S6-FFF-XX
CF04T3-870-XX
CF06T3-897-XX
CF06T6-905-XX
CF06T4-915-XX
CF06T3-947-XX
CF12T2-1030-XX
CF06T3-1030-XX
CF06V
CF04T2-1575-XX
897 1747
CF12T3-1030
CF12T4-1030-XX
CF06V3
smd 1472
CF04T3-870-XX
CF04V
1030 mhz
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1030h
Abstract: FASTON 1030 mhz filter AMP Faston 850C SF1030 025MA
Text: SF 1030 1 & 3 AMP 6 & 10 AMP db db 90 90 80 80 SYMMETRIC 70 70 60 60 50 50 40 SYMMETRIC 40 30 ASYMMETRIC 30 20 20 10 10 .1 LOW COST, HIGH PERFORMANCE IEC INLET FILTER STANDARD & HIGHER INDUCTANCE VERSIONS .15 .4 1 4 10 Frequency MHz SF 1030 Standard SF 1030-1/01
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1030H-1/01
1030H-3/01
1030H-6/01
-250C
250Vac
400Hz
2250Vdc,
2x2700pF
1030h
FASTON
1030 mhz filter
AMP Faston
850C
SF1030
025MA
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MAFR-000493-000001
Abstract: No abstract text available
Text: MAFR-000493-000001 Single Junction Drop-In Circulator 1030 MHz—1090 MHz Rev. A Applications Features ♦ RADAR ♦ RoHS Compliant ♦ BeO free Electrical Specifications Parameter 1. 2. Conditions Units Min Frequency Range MHz 1030 Impedance Ω Insertion Loss
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MAFR-000493-000001
Hz--1090
ANI-001
MAFR-000493-000001
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Untitled
Abstract: No abstract text available
Text: Preliminary PTVA101K02EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Description The PTVA101K02EV LDMOS FET is designed for use in power ampliier applications in the 1030 MHz / 1090 MHz frequency band.
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PTVA101K02EV
PTVA101K02EV
H-36275-4
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Untitled
Abstract: No abstract text available
Text: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : 7447713470 SPEICHERDROSSEL WE-PD 1030 Bezeichnung : description : POWER INDUCTOR WE-PD 1030 DATUM / DATE : 2011-02-17 A Mechanische Abmessungen / dimensions:
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D-74638
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Untitled
Abstract: No abstract text available
Text: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : 7447713121 SPEICHERDROSSEL WE-PD 1030 Bezeichnung : description : POWER INDUCTOR WE-PD 1030 DATUM / DATE : 2011-02-17 A Mechanische Abmessungen / dimensions:
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D-74638
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we-pd
Abstract: we-pd m
Text: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : 7447713151 SPEICHERDROSSEL WE-PD 1030 Bezeichnung : description : POWER INDUCTOR WE-PD 1030 DATUM / DATE : 2011-02-17 A Mechanische Abmessungen / dimensions:
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D-74638
we-pd
we-pd m
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Untitled
Abstract: No abstract text available
Text: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : 7447713680 SPEICHERDROSSEL WE-PD 1030 Bezeichnung : description : POWER INDUCTOR WE-PD 1030 DATUM / DATE : 2011-02-17 A Mechanische Abmessungen / dimensions:
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D-74638
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J264
Abstract: No abstract text available
Text: ITC1100 1000 WATT, 50V, Pulsed Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55SW, Style 1 Common Base The ITC1100 is a common base bipolar transistor. It is designed for pulsed interrogator systems in the frequency band of 1030 MHz. The device has gold
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ITC1100
ITC1100
1030MHz,
J264
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1030 mhz filter
Abstract: 1030 mhz saw filter MN95015 DSMN95015
Text: 1030 MHz SAW Filter 12 MHz Bandwidth Part Number: MN95015 DESCRIPTION • • • 1030 MHz SAW bandpass filter with 12 MHz bandwidth. 3 x 3 mm LCC package. RoHS compliant. TYPICAL PERFORMANCE Horizontal: Frequency : Relative Magnitude : Relative magnitude :
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MN95015
DSMN95015
25-Aug-2009
MN95015
1030 mhz filter
1030 mhz saw filter
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Untitled
Abstract: No abstract text available
Text: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : 7447713015 SPEICHERDROSSEL WE-PD 1030 Bezeichnung : description : POWER INDUCTOR WE-PD 1030 DATUM / DATE : 2011-02-17 A Mechanische Abmessungen / dimensions:
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D-74638
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Untitled
Abstract: No abstract text available
Text: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : 7447713820 SPEICHERDROSSEL WE-PD 1030 Bezeichnung : description : POWER INDUCTOR WE-PD 1030 DATUM / DATE : 2011-02-17 A Mechanische Abmessungen / dimensions:
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D-74638
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7447713033
Abstract: No abstract text available
Text: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : 7447713033 SPEICHERDROSSEL WE-PD 1030 Bezeichnung : description : POWER INDUCTOR WE-PD 1030 DATUM / DATE : 2011-02-17 A Mechanische Abmessungen / dimensions:
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D-74638
7447713033
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Untitled
Abstract: No abstract text available
Text: VCO Product Specification Model: VCO190-1050T Rev: A Date: 4/17/2003 Customer: SIRENZA MICRODEVICES, INC. Operating Temperature Range: Parameter Frequency Range - Min Typ Max Units X 1030 1050 1070 MHz X 1 1.4 -10 ° to 85 ° C Remarks Tuning Voltage: 1030 MHz
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VCO190-1050T
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Untitled
Abstract: No abstract text available
Text: 1011LD110 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QZ-1 Common Source The 1011LD110 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110 Wpk of RF power from 1030 to 1090
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1011LD110
55QZ-1
1011LD110
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201618A
Abstract: MAFR-000 MAFR-000493-000001
Text: PRELIMINARY DATA SHEET MAFR-000493-000001: 1030-1090 MHz Single Junction Drop-In Circulator Applications • Radar systems • Power amplifiers Features • BeO free • Operating frequency range: 1030 MHz to 1090 MHz Description The MAFR-000493-000001 is a single-junction circulator
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MAFR-000493-000001:
MAFR-000493-000001
MAFR-000493000001
01618A
201618A
MAFR-000
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1030MHz-1090MHz
Abstract: No abstract text available
Text: 10502 500 Watts, 50 Volts, Pulsed Avionics 1030 / 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55SM Common Base The 10502 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030/1090 MHz, with the pulse width
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25oC1
1030MHz
1090MHz
1030MHz-1090MHz
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PTVA101K02EV
Abstract: 1030-1090MHz
Text: Preliminary PTVA101K02EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Description The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band.
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PTVA101K02EV
PTVA101K02EV
H-36275-4
1030-1090MHz
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RO6006
Abstract: TRANSISTOR c105 capacitor 6800 uf r812 R809 PTVA101K02EV 011022 1030-1090MHz SK101M100ST
Text: PTVA101K02EV Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Description The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with
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PTVA101K02EV
PTVA101K02EV
H-36275-4
RO6006
TRANSISTOR c105
capacitor 6800 uf
r812
R809
011022
1030-1090MHz
SK101M100ST
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transistor DF 50
Abstract: transistor 1000W 1030mhz 1000W TRANSISTOR ITC1100 1000W TRANSISTOR POWER
Text: R.1.120799 ITC1100 1000 WATT, 50V, Pulsed Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55SW, Style 1 Common Base The ITC1100 is a common base bipolar transistor. It is designed for pulsed interrogator systems in the frequency band of 1030 MHz. The device has gold
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ITC1100
ITC1100
1030MHz,
transistor DF 50
transistor 1000W
1030mhz
1000W TRANSISTOR
1000W TRANSISTOR POWER
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