2N1656
Abstract: 2N2176 2n1275 2n327A
Text: small signal transistors 67 SILICON PNP ALLOY GENERAL PURPOSE TRANSISTORS RATED BREAKDOWN VOLTAGES TYPE NUMBERS 2N 1441 2N 327A 2N 3278 2N 1034 2N 1439 2N 3345 2N 3346 J 2N 1440 OSHA 7531 2N 1474 ¢ 2N 1232 ¢ SHA 7534 ¢ 2N 1474A ¢ 2N 1233 OSHA 7538 2N 1475
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1034 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)40m Absolute Max. Power Diss. (W)50m Maximum Operating Temp (øC)60’ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.
|
Original
|
|
PDF
|
2SB913
Abstract: 2SD123 1034B
Text: Ordering number:1034B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB913/2SD1230 Driver Applications Applications Package Dimensions • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. unit:mm 2022A [2SB913/2SD1230]
|
Original
|
1034B
2SB913/2SD1230
2SB913/2SD1230]
2SB913
2SB913
2SD123
1034B
|
PDF
|
2SB913
Abstract: 2SD1230 ITR08710
Text: Ordering number:ENN1034B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB913/2SD1230 Driver Applications Applications Package Dimensions • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. unit:mm 2022A [2SB913/2SD1230]
|
Original
|
ENN1034B
2SB913/2SD1230
2SB913/2SD1230]
2SB913
2SB913
2SD1230
ITR08710
|
PDF
|
2SB913
Abstract: 2SD1230 ITR08710
Text: Ordering number:ENN1034B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB913/2SD1230 Driver Applications Applications Package Dimensions • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. unit:mm 2022A [2SB913/2SD1230]
|
Original
|
ENN1034B
2SB913/2SD1230
2SB913/2SD1230]
2SB913
2SB913
2SD1230
ITR08710
|
PDF
|
70413080
Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
Text: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919
|
Original
|
2N3391
SPS-953
MPS-8097,
2N6520
MPS-A18,
2N6539,
SK-3919
2N4249
SPS-690,
PN-2907A
70413080
70473180
SAC-187
Motorola 70483180
70483100
70484200
70487478
70484140
SJ-6357
70483180
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MAX5977 RELIABILITY REPORT FOR MAX5977AETP+T PLASTIC ENCAPSULATED DEVICES June 24, 2011 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Approved by Sokhom Chum Quality Assurance Reliability Engineer Maxim Integrated Products. All rights reserved.
|
Original
|
MAX5977
MAX5977AETP
InNQ65
/-2500V
JESD22-A114.
/-100mA
JESD78.
|
PDF
|
IL5233G
Abstract: IL5250G IL5212G IL5200G IL5225G IL52XXG 1117 S 3,3 Transistor IL5230G 1117 sot223 scsi electric diagram
Text: IL52XXG FAMILY OF LOW DROP FIXED AND ADJUSTABLE VOLTAGE REGULATORS OF POSITIVE POLARITY DESCRIPTION The IL52XXG is a low drop voltage regulator which is able to provide output current up to 800mA even in adjustable version Vref=1.25V . There are offered the following output voltages: 1.2 V
|
Original
|
IL52XXG
IL52XXG
800mA
IL5212G)
IL5218G)
IL5225G)
IL5228G)
IL5230G)
IL5233G)
IL5250G)
IL5233G
IL5250G
IL5212G
IL5200G
IL5225G
1117 S 3,3 Transistor
IL5230G
1117 sot223
scsi electric diagram
|
PDF
|
BGY45B
Abstract: No abstract text available
Text: N AtlER PH IL I P S / D I S C R E T E i 860 8 1034 ObFT • bbS3^3l" O O l ^ s " T DT ‘-7 * y ^ o f-C > / BGY45B _/ V V.H.F. BROADBAND POWER MODULE V.H.F. broadband power amplifier module prim arily designed for mobile communications equipment,
|
OCR Scan
|
BGY45B
bbS3131
7Z94276
BGY45B
|
PDF
|
IRF045
Abstract: RF045 100-C IRF044 IRFQ44 R1LV
Text: HE 0 I 4055452 000*1034 3 | Data Sheet No. PD-9.584A INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER I«R AVALANCHE AND dv/dt RATED 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRF0 4 4 IRF0 4 5 N -C H A N N E L Product Summary The HEXFET® technology is the key to International
|
OCR Scan
|
IRFQ44
O-204AE
IRF045
RF045
100-C
IRF044
IRFQ44
R1LV
|
PDF
|
transformer ferrite core
Abstract: noyau de ferrite N2468 TRANSISTOR 641 transistor BU 110 ferrite core coil 1-10 mH 1-4 A schema d un transistor en thomson ferrite core transistor Bu thomson deflection coil
Text: BU 129 NPN S ILIC O N T R A N S IS T O R , TR IP L E D IF F U S E D MESA TR A N S IS TO R N P N S IL IC IU M , M ESA T R IP L E D IF F U S E The BU 129 transistor is primarly intended for use in horizontal deflection output stage for 110° • 12" 20 mm neck black and white
|
OCR Scan
|
CB-19
transformer ferrite core
noyau de ferrite
N2468
TRANSISTOR 641
transistor BU 110
ferrite core coil 1-10 mH 1-4 A
schema d un transistor en
thomson ferrite core
transistor Bu
thomson deflection coil
|
PDF
|
Untitled
Abstract: No abstract text available
Text: O rdering number: EN 550E J SAW O N 0.550 E _ 2 S D 8 7 9 NPN Epitaxial Planar Silicon Transistor 1.5 V and 3 V Strobe Applications Features . In applications where two NiCd batteries are used to provide 2.4V, two 2SD879 transistors are used.
|
OCR Scan
|
2SD879
750mW)
5137KI/3075KI/5244KI
2SD879
I350T
|
PDF
|
S1854
Abstract: transistor s1854 s1854 a s1854 equivalent ic s1854 SI854 REGULATOR s1854 transistor s1854 ic error REGULATOR IC FOR 150V s1854 B1036
Text: SILICON N-SUBSTRATE MONOLITHIC TYPE S1854 SI854 IS A REGULATOR DRIVER FOR LINE OPERATED TV, Unit in mm WHICH ARE BUILT UP OF ERROR AMPLIFIER TRANSISTOR, 10.3MAX. 0&6±O,2 STANDARD VOLTAGE ZENER DIODE AND POLY-SILICON RESISTORS ON MONOLITHIC CHIP. FEATURES:
|
OCR Scan
|
S1854
SI854
S1854
transistor s1854
s1854 a
s1854 equivalent
ic s1854
REGULATOR s1854
transistor s1854 ic error
REGULATOR IC FOR 150V s1854
B1036
|
PDF
|
2N4393, NATIONAL
Abstract: transistor pn4393 2N4392 NATIONAL SEMICONDUCTOR transistor 4393 jfet transistor 4392 national 2n4391 2N4391 2N4393 2N4393 national
Text: National Semiconductor 2N4391 2N4392 2N4393 PN4391 PN4392 PN4393 MMBF4391 MMBF4392 MMBF4393 TO -2 Î8 SOT-23 T L /G /10100-6 T L /G /1 0 1 0 0 -2 General Purpose N-Channel JFET Transistor
|
OCR Scan
|
92/PN4392/MMBF4392/2N4393/PN4393/MMBF4393
2N4391
2N4392
2N4393
PN4391
PN4392
PN4393
MMBF4391
MMBF4392
MMBF4393
2N4393, NATIONAL
transistor pn4393
2N4392 NATIONAL SEMICONDUCTOR
transistor 4393
jfet transistor
4392
national 2n4391
2N4393
2N4393 national
|
PDF
|
|
|
DARLINGTON TRANSISTOR ARRAYS 2A
Abstract: PU3119 transistor C1505 i32652 PU3219 PU4119 PU4219 PU4419 PU4519 darlington pair transistor 1A
Text: PU3219, PU4219, PU4519 Power Transistor Arrays PU3219, PU4219, PU4519 Silicon NPN Epitaxial Planar Darlington Type Package Dimensions PU3219 Power Amplifier, Switching Complementary Pair with PU3119, PU4119, PU4419 • Features • • • • • anlflifflVllf
|
OCR Scan
|
PU3219,
PU4219,
PU4519
PU3119,
PU4119,
PU4419
PU3219:
DARLINGTON TRANSISTOR ARRAYS 2A
PU3119
transistor C1505
i32652
PU3219
PU4119
PU4219
PU4419
PU4519
darlington pair transistor 1A
|
PDF
|
Transistor 2SA 2SB 2SC 2SD
Abstract: 993 395 pnp npn transistor 2SA 101 TRANSISTOR 2SC 635 transistor 2Sb 474 transistor 2SC458 transistor 2sc2512 transistor 2sk 168 transistor 2SD 1153 3SK228
Text: Index Bipolar Transistor PNP, High Frequency Use 2SA Type 2SA673 . 81 2SA 673A . 81
|
OCR Scan
|
2SA673
2SA778
BB101C
BB301M
BB301C
Transistor 2SA 2SB 2SC 2SD
993 395 pnp npn
transistor 2SA 101
TRANSISTOR 2SC 635
transistor 2Sb 474
transistor 2SC458
transistor 2sc2512
transistor 2sk 168
transistor 2SD 1153
3SK228
|
PDF
|
transistor t2F
Abstract: 68fl
Text: Philips Semiconductors Product specification PNP switching transistor PMST2907A FEATURES PINNING • Low current max. 200 mA PIN DESCRIPTION • Low voltage (max. 60 V). 1 2 emitter APPLICATIONS 3 collector base • Medium power switching • General purpose amplification.
|
OCR Scan
|
SC-70;
OT323
PMST2222A.
PMST2907A
PMST2907A
transistor t2F
68fl
|
PDF
|
2sk type
Abstract: transistor+2sk
Text: Field Effect Transistors • Silicon MOS FETs # For Medium-Output Electrical Characteristics Ta = 2 5 °C Absolute Maximum Ratings (Ta —25 °C) Application Pch Switching b (A) (W) max. (fi) 1 Y* 1 typ. (S) (ns) ti (ns) td(off) (ns) Package (V) (on) ton
|
OCR Scan
|
O-220F
58Fast
2sk type
transistor+2sk
|
PDF
|
transistor BU 110
Abstract: BU109 transistor BU 109 deflexion BU109S N1034 thomson ferrite core
Text: BU109 IMPN SILIC O N TR A N S IS TO R , D IF F U S E D MESA TRANSISTO R NPN S IL IC IU M , MESA D IF F U S E ^ Preferred device D is p o s itif re co m m a n d é The BU 109 is a fast switching high voltage transistor. It is primarly intended for use in horizontal deflexion output stage of black
|
OCR Scan
|
BU109
BU109
transistor BU 110
transistor BU 109
deflexion
BU109S
N1034
thomson ferrite core
|
PDF
|
Untitled
Abstract: No abstract text available
Text: m an A M P com pany RF MOSFET Power Transistor, 60W, 28V 2 - 1 7 5 MHz DU2860T V2.00 Features • • • • • N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices
|
OCR Scan
|
DU2860T
4-40pF
9-180pF
DU2860T
|
PDF
|
DIODE 349
Abstract: SIEMENS 1035 BUZ348
Text: SIEMENS BUZ 349 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 349 Vbs 100 V b R o s io n Package Ordering Code 32 A 0.06 w TO-218AA C67078-S3113-A2 Maximum Ratings Parameter Symbol Continuous drain current Values
|
OCR Scan
|
O-218AA
C67078-S3113-A2
O-218AA
DIODE 349
SIEMENS 1035
BUZ348
|
PDF
|
Untitled
Abstract: No abstract text available
Text: m an A M P com pany 1 RF MOSFET Power Transistor, 120W, 28V DU28120U 2 -1 7 5 MHz Features • • • • • N -C hannel E n h an cem en t M od e D evice DM OS Stru ctu re L o w er C ap acitan ces fo r B ro ad b an d O p eratio n H igh Satu rated O utput P o w er
|
OCR Scan
|
DU28120U
5-80pF
4-40pF
9-180pF
500pF
|
PDF
|
MPS-H07
Abstract: MPSH07 MPS-H08 VHF Transistors
Text: MPS-H07 SILICON MPS-H08 NPN SILICON FM/VHF TRANSISTORS NPN SILICON ANNULAR TRANSISTORS . . . designed fo r common-base F M /V H F RF am plifier applications. Guaranteed Noise Figure — N F = 3 .2 dB (M ax) @ f = 100 M H z = 3 .5 dB (M ax) @ f = 2 0 0 M H z
|
OCR Scan
|
MPS-H07
MPS-H08
200MHz
MPS-H07
MPS-H07,
100-MHz
MPSH07
MPS-H08
VHF Transistors
|
PDF
|
SIEMENS 1035
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power MOS Transistor VDS lD BUZ 205 = 400 V = 6.0 A ^D SIonl = 1 - 0 Q • N channel • FREDFET • Enhancement mode • Avalanche-proof • Package: TO -220A B ’ Type Ordering code BUZ 205 C67078-A1401-A2 Maximum Ratings Parameter Drain-source voltage
|
OCR Scan
|
-220A
C67078-A1401-A2
SIL00032
SIL00753
SIEMENS 1035
|
PDF
|
