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    104 CEV Search Results

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    104 CEV Price and Stock

    TE Connectivity YDTS24H11-04CEV001

    Circular Connector MIL-DTL-38999 Hermetic Receptacle 4 Position Pin Contact Jam Nut Solder (Alt: YDTS24H11-04CEV001)
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    Master Electronics YDTS24H11-04CEV001
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    TE Connectivity YDTS23H11-04CEV001

    Circular Connector MIL-DTL-38999 Hermetic Receptacle 4 Position Pin Contact Flange Mount Solder - Bulk (Alt: YDTS23H11-04CEV001)
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    Master Electronics YDTS23H11-04CEV001
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    TE Connectivity YDTS21H11-04CEV001

    Circular Connector MIL-DTL-38999 Hermetic Receptacle 4 Position Pin Contact Flange Mount Solder - Bulk (Alt: YDTS21H11-04CEV001)
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    Master Electronics YDTS21H11-04CEV001
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    TE Connectivity YDTS20H11-04CEV001

    Circular Connector MIL-DTL-38999 Hermetic Receptacle 4 Position Pin Contact Flange Mount Solder - Bulk (Alt: YDTS20H11-04CEV001)
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    Master Electronics YDTS20H11-04CEV001
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    TE Connectivity D38999/27HB4CE (ALTERNATE: YDTS23H11-04CEV001)

    Deutsch D38999/27HB4CE Hermetic DTS23H | TE Connectivity DEUTSCH D38999/27HB4CE
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    104 CEV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PIC24FJ16MC101/102 AND PIC24FJ32MC101/102/104 16-Bit Microcontrollers up to 32-Kbyte Flash and 2-Kbyte SRAM Operating Conditions Advanced Analog Features • 3.0V to 3.6V, -40ºC to +125ºC, DC to 16 MIPS • ADC module: - 10-bit, 1.1 Msps with four S&H


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    PDF PIC24FJ16MC101/102 PIC24FJ32MC101/102/104 16-Bit 32-Kbyte 10-bit, 20-pin 28-pin 44-pin PIC24F

    example dsPIC33fj16

    Abstract: DSPIC33FJ16MC102 DS70191 DS70187 MPLAB PM3 circuit AD21b DS70192 DS70209 49 pin connector LCD
    Text: dsPIC33FJ16 GP/MC 101/102 AND dsPIC33FJ32(GP/MC)101/102/104 16-Bit Digital Signal Controllers (up to 32-Kbyte Flash and 2-Kbyte SRAM) Operating Conditions Advanced Analog Features • 3.0V to 3.6V, -40ºC to +125ºC, DC to 16 MIPS • ADC module: - 10-bit, 1.1 Msps with four S&H


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    PDF dsPIC33FJ16 dsPIC33FJ32 16-Bit 32-Kbyte 10-bit, 18-pin 44-pin dsPIC33F 40-Bit example dsPIC33fj16 DSPIC33FJ16MC102 DS70191 DS70187 MPLAB PM3 circuit AD21b DS70192 DS70209 49 pin connector LCD

    MC101

    Abstract: No abstract text available
    Text: dsPIC33FJ16 GP/MC 101/102 AND dsPIC33FJ32(GP/MC)101/102/104 16-Bit Digital Signal Controllers (up to 32-Kbyte Flash and 2-Kbyte SRAM) Operating Conditions Advanced Analog Features • 3.0V to 3.6V, -40°C to +125°C, DC to 16 MIPS • ADC module: - 10-bit, 1.1 Msps with four S&H


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    PDF dsPIC33FJ16 dsPIC33FJ32 16-Bit 32-Kbyte 10-bit, 18-pin 44-pin dsPIC33F Code60-4-227-8870 MC101

    DS70207

    Abstract: DS70203 MPLAB PM3 circuit induction MOTOR SPEED CONtrol pwm pic DSPIC33FJ16MC101 DS70655 DS70202 DS70194 example dsPIC33fj16 DS70644
    Text: dsPIC33FJ16 GP/MC 101/102 AND dsPIC33FJ32(GP/MC)101/102/104 16-bit Digital Signal Controllers (up to 32 KB Flash and 2 KB SRAM) Operating Conditions Advanced Analog Features • 3.0V to 3.6V, -40ºC to +125ºC, DC to 16 MIPS • ADC module: - 10-bit, 1.1 Msps with four S&H


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    PDF dsPIC33FJ16 dsPIC33FJ32 16-bit 10-bit, 18-pin 44-pin dsPIC33F 40-bit d8-366 DS70207 DS70203 MPLAB PM3 circuit induction MOTOR SPEED CONtrol pwm pic DSPIC33FJ16MC101 DS70655 DS70202 DS70194 example dsPIC33fj16 DS70644

    DS39699

    Abstract: DS39711 DS39707 DS39703 DS39701 DS39715 DS39702 DS39697 PIC24F Family Reference Manual DS39696
    Text: PIC24FJ16MC101/102 AND PIC24FJ32MC101/102/104 16-bit Microcontrollers up to 32 KB Flash and 2 KB SRAM Operating Conditions Advanced Analog Features • 3.0V to 3.6V, -40ºC to +125ºC, DC to 16 MIPS • ADC module: - 10-bit, 1.1 Msps with four S&H - Six analog inputs on 20-pin devices, eight analog


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    PDF PIC24FJ16MC101/102 PIC24FJ32MC101/102/104 16-bit 10-bit, 20-pin 28-pin 44-pin PIC24F 40-bit DS39699 DS39711 DS39707 DS39703 DS39701 DS39715 DS39702 DS39697 PIC24F Family Reference Manual DS39696

    CECC 32101

    Abstract: 0805 cnc 331 MARKING CODE DE
    Text: =Y lf exPage 9 rU e CeVoir / Se CERAMIC CHIP CAPACITORS CLASS 2 BASSE TENSION LOW VOLTAGE Format / Format 0403 0603 Modèle normalisé / Standard model 0402 CNC 19 CNC 19 A L W T max. a Conformes aux spécifications des normes CECC 32101 et NF C 93133 In accordance with the specifications of


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    PDF

    93133

    Abstract: No abstract text available
    Text: =Y lf exPage 9 rU e CeVoir / Se L W T max. a Conformes aux spécifications des normes CECC 32101 et NF C 93133 In accordance with the specifications of CECC 32101 and NF C 93133 standards L T W a L, W, T, pour chips étamé option E, H ou T : + 0,5 mm L, W, T, for tinned chips (option E, H or T) : + 0,5 mm


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    PDF

    12W MARKING sot23

    Abstract: marking 12W SOT23 ZXTN2020F ZXTP2029F ZXTP2029FTA
    Text: ZXTP2029F 100V, SOT23, PNP medium power transistor Summary V BR CEV > -130V, V(BR)CEO > -100V IC(cont) = -3A RCE(sat) = 45m⍀ typical VCE(sat) < -80mV @ -1A PD = 1.2W Complementary part number: ZXTN2020F Description Advanced process capability and package design have been used to


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    PDF ZXTP2029F -130V, -100V -80mV ZXTN2020F 12W MARKING sot23 marking 12W SOT23 ZXTN2020F ZXTP2029F ZXTP2029FTA

    marking 12W SOT23

    Abstract: ZXTN2020F ZXTN2020FTA ZXTP2029F plc lamp 12W MARKING sot23
    Text: ZXTN2020F 100V, SOT23, NPN medium power transistor Summary V BR CEV > 160V, V(BR)CEO > 100V IC(cont) = 4A RCE(sat) = 30m⍀ typical VCE(sat) < 50mV @ 1A PD = 1.2W Complementary part number: ZXTP2029F Description Advanced process capability and package design have been used to


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    PDF ZXTN2020F ZXTP2029F marking 12W SOT23 ZXTN2020F ZXTN2020FTA ZXTP2029F plc lamp 12W MARKING sot23

    Untitled

    Abstract: No abstract text available
    Text: ZXTN2020F 100V, SOT23, NPN medium power transistor Summary V BR CEV > 160V, V(BR)CEO > 100V IC(cont) = 4A RCE(sat) = 30m⍀ typical VCE(sat) < 50mV @ 1A PD = 1.2W Complementary part number: ZXTP2029F Description Advanced process capability and package design have been used to


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    PDF ZXTN2020F ZXTP2029F

    marking 12W SOT23

    Abstract: ZXTN2020F
    Text: ZXTN2020F 100V, SOT23, NPN medium power transistor Summary V BR CEV > 160V, V(BR)CEO > 100V IC(cont) = 4A RCE(sat) = 30m⍀ typical VCE(sat) < 50mV @ 1A PD = 1.2W Complementary part number: ZXTP2029F Description Advanced process capability and package design have been used to


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    PDF ZXTN2020F ZXTP2029F ZXTN2020FTA marking 12W SOT23

    OUTLINE DIMENSIONS in inche

    Abstract: marking 951 12W MARKING sot23 ZXTN2018F ZXTP2027F ZXTP2027FTA
    Text: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number: ZXTN2018F Description Advanced process capability and package design have been used to


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    PDF ZXTP2027F -100V, ZXTN2018F OUTLINE DIMENSIONS in inche marking 951 12W MARKING sot23 ZXTN2018F ZXTP2027F ZXTP2027FTA

    ZXTN2018F

    Abstract: ZXTN2018FTA ZXTP2027F marking 851
    Text: ZXTN2018F 60V, SOT23, NPN medium power transistor Summary V BR CEV > 140V, V(BR)CEO > 60V IC(cont) = 5A RCE(sat) = 25 m⍀ typical VCE(sat) < 45 mV @ 1A PD = 1.2W Complementary part number : ZXTP2027F Description Advanced process capability and package design have been used to


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    PDF ZXTN2018F ZXTP2027F ZXTN2018F ZXTN2018FTA ZXTP2027F marking 851

    marking 322

    Abstract: br 2222 npn
    Text: ZXTN2031F 50V, SOT23, NPN medium power transistor Summary V BR CEV > 80V, V(BR)CEO > 50V IC(cont) = 5A RCE(sat) = 24m⍀ typical VCE(sat) < 40mV @ 1A PD = 1.2W Complementary part number: ZXTP2025F Description Advanced process capability and package design have been used to


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    PDF ZXTN2031F ZXTP2025F marking 322 br 2222 npn

    marking 12W SOT23

    Abstract: 12W MARKING sot23 IB100mA Marking 853
    Text: ZXTN2020F 100V, SOT23, NPN medium power transistor Summary V BR CEV > 160V, V(BR)CEO > 100V IC(cont) = 4A RCE(sat) = 30m⍀ typical VCE(sat) < 50mV @ 1A PD = 1.2W Complementary part number: ZXTP2029F Description Advanced process capability and package design have been used to


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    PDF ZXTN2020F ZXTP2029F ZXTN2020FTA 522-ZXTN2020FTA ZXTN2020FTA marking 12W SOT23 12W MARKING sot23 IB100mA Marking 853

    ZXTN2031FTA

    Abstract: ZXTN2031F ZXTP2025F mosfet marking 12W
    Text: ZXTN2031F 50V, SOT23, NPN medium power transistor Summary V BR CEV > 80V, V(BR)CEO > 50V IC(cont) = 5A RCE(sat) = 24m⍀ typical VCE(sat) < 40mV @ 1A PD = 1.2W Complementary part number: ZXTP2025F Description Advanced process capability and package design have been used to


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    PDF ZXTN2031F ZXTP2025F ZXTN2031FTA ZXTN2031F ZXTP2025F mosfet marking 12W

    marking 12W SOT23

    Abstract: No abstract text available
    Text: ZXTP2025F 50V, SOT23, PNP medium power transistor Summary V BR CEV > -50V, V(BR)CEO > -50V IC(cont) = -5A RCE(sat) = 30m⍀ typical VCE(sat) < - 60mV @ -1A PD = 1.2W Complementary part number: ZXTN2031F Description Advanced process capability and package design have been used to


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    PDF ZXTP2025F ZXTN2031F marking 12W SOT23

    TS16949

    Abstract: ZXTN2020F ZXTP2029F ZXTP2029FTA
    Text: ZXTP2029F 100V, SOT23, PNP medium power transistor Summary V BR CEV > -130V, V(BR)CEO > -100V IC(cont) = -3A RCE(sat) = 45m⍀ typical VCE(sat) < -80mV @ -1A PD = 1.2W Complementary part number ZXTN2020F Description C Advanced process capability and package design have been used to


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    PDF ZXTP2029F -130V, -100V -80mV ZXTN2020F D-81541 TS16949 ZXTN2020F ZXTP2029F ZXTP2029FTA

    Untitled

    Abstract: No abstract text available
    Text: ZXTP2029F 100V, SOT23, PNP medium power transistor Summary V BR CEV > -130V, V(BR)CEO > -100V IC(cont) = -3A RCE(sat) = 45m⍀ typical VCE(sat) < -80mV @ -1A PD = 1.2W Complementary part number ZXTN2020F Description C Advanced process capability and package design have been used to


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    PDF ZXTP2029F -130V, -100V -80mV ZXTN2020F D-81541

    Untitled

    Abstract: No abstract text available
    Text: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number ZXTN2018F Description C Advanced process capability and package design have been used to


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    PDF ZXTP2027F -100V, ZXTN2018F D-81541

    TS16949

    Abstract: ZXTN2018F ZXTP2027F ZXTP2027FTA
    Text: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number ZXTN2018F Description C Advanced process capability and package design have been used to


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    PDF ZXTP2027F -100V, ZXTN2018F D-81541 TS16949 ZXTN2018F ZXTP2027F ZXTP2027FTA

    Untitled

    Abstract: No abstract text available
    Text: 9 =W S age P H Ro oir / See CONDENSATEURS CERAMIQUE MONOCOUCHES SINGLE LAYER CERAMIC CAPACITORS V Tangente ␦ et facteur Q Tangent ␦ and Q factor A Hyperfréquence K⍜ = 100 ± 30 ppm / °C Q à / to 1 MHz у 10000 B Classe 1 NPO K⍜ = 0 ± 30 ppm / °C


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    PDF F-67441

    Untitled

    Abstract: No abstract text available
    Text: KODENSHI CORP 2SE D PG-I04 3\ 5 —-tz 7 5 v - k -i t ts n m & y M$>7 W S242bDfl 0DQQ27S T • DIMENSIONS fc -tfc >*&fr-£hvtzm>m<nix. * h-tz > t x \ (Unit: mm 'M t * # & to The PG-104 surface mountable reflective sensor combines a GaAs IRED with a high-sensitivity photodarlington in a


    OCR Scan
    PDF PG-I04 S242bDfl 0DQQ27S PG-104 5545b0fl 0QDQ57L.

    Untitled

    Abstract: No abstract text available
    Text: KODENSHI CORP 55E D S545tj0fl Q00DS73 5 SG-I04I3\ 5 - 4 2 7 5 y - K t S 5 J t 7 * h h 7 > y a * £ f f i * ^ b t t f c & ' J 'a c 7 > B [ DIMENSIONS T -W -1 3 (Unit: mm & f M 7 * M r > - ^ T \ K # ( t 7 ^ - 7 ^ ^ i| i| ( c ilJ ; ® T '# S f o The SG-104 surface mountable reflective sensor com bines a


    OCR Scan
    PDF S545tj0fl Q00DS73 SG-I04I3\ SG-104