3355X
Abstract: No abstract text available
Text: Axial Leaded Aluminum Electrolytic Capacitors Type TYAH 105°C Series Standard Product Table Type TYAH Series Rated Case Voltage Capacitance Capacitance Size V.DC µF Code Dia x L Case Code Dissipation Ripple Factor Current % * (mA)* Part Number 6.3 100 107
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TYAH0J107B13ML
TYAH0J227B13ML
TYAH0J337C16ML
TYAH0J477C16ML
TYAH0J108D17ML
TYAH0J228E22ML
3355X
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j4310
Abstract: 3355X
Text: Axial Leaded Aluminum Electrolytic Capacitors Type TYAV 85°C Series Standard Product Table Type TYAV Series Rated Case Voltage Capacitance Capacitance Size V.DC µF Code Dia x L Case Code Dissipation Ripple Factor Current % * (mA)* Part Number 6.3 47 476
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TYAV0J476A12ML
TYAV0J107B13ML
TYAV0J227B13ML
TYAV0J337C16ML
TYAV0J477C16ML
TYAV0J108D17ML
j4310
3355X
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HTSS242150
Abstract: HTSS372125 HTSS242125 Hi-Tech Fuses
Text: Trans-Guard OS Shorty Fuse C A ⁄4-20 threaded hole 1 ⁄2" deep both ends 1 Dimensional Information NOMINAL FUSE VOLTAGE RATING (KV) 8.3 17.2 15.5 23.0 38.0 CURRENT RATING (AMPS) FUSE CAT. NO. 40 HTSS232040 50 65 80 100 125 150 165 200 30 40 50 65 80
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HTSS232050
HTSS232065
HTSS232080
HTSS232100
HTSS232125
HTSS232150
HTSS232165
HTSS232200
HTSS240030
HTSS240040
HTSS242150
HTSS372125
HTSS242125
Hi-Tech Fuses
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ATO43B35
Abstract: AT043B35-15I-10
Text: TFT Proto 4.3” 119.54 4706 105.5 4154 4 157.4 Board dimensions 4 157.4 TFT colors 70 2756 78 3071 Legend mm mils 262K If you want to learn more about our products, please visit our website at www.mikroe.com If you are experiencing some problems with any of our products or just need additional
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TFT-D11
TFT-D12
TFT-D13
TFT-D14
TFT-D15
TFT-D10
ATO43B35
AT043B35-15I-10
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SSD1963
Abstract: No abstract text available
Text: Figure 4: Board dimensions 135 5315 121 4 764 TFT Proto 5” 4 157.4 76 2 992 262K colors 87 3 425 TFT Legend mm mils If you want to learn more about our products, please visit our website at www.mikroe.com If you are experiencing some problems with any of our products or just need additional
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HT050AWV40T
TFT-D11
TFT-D12
TFT-D13
TFT-D14
TFT-D15
TFT-D10
SSD1963
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Multilink MTC5515
Abstract: vfo schematic Multilink Technology MTC5515 modulator driver mtc5515 sucoflex 104 mtc1204 MTC1224S multilink cdr demux mtc1203 MTC1224
Text: MIXED SIGNAL INTEGRATED CIRCUIT PRODUCTS 10 Gb/s reco The MT m C1 16-Bit CDRDMUX Plea mended 204 is no se re fo fer t r new d t o the M esign Applications s. TC1 224 • Telecom transmission systems MTC1204 Product Data Sheet • SONET OC-192 and SDH STM-64 equipment
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16-Bit
MTC1204
OC-192
STM-64
MTC1204
OC-192,
STM-64,
03-23-00L
Multilink MTC5515
vfo schematic
Multilink Technology MTC5515
modulator driver mtc5515
sucoflex 104
MTC1224S
multilink cdr demux
mtc1203
MTC1224
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application notes MC34063
Abstract: MC34063 Application Notes mc34063 led circuit MC34063 application mc34063 MC34063 led MC34063 drive LED mc34063 constant current 12 v to 5 v MC34063 mc34063 application note
Text: Data Sheet PT8A2703/2713 Cost Down Shaver Controller |
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PT8A2703/2713
PT8A2703
PT0162
application notes MC34063
MC34063 Application Notes
mc34063 led circuit
MC34063 application
mc34063
MC34063 led
MC34063 drive LED
mc34063 constant current
12 v to 5 v MC34063
mc34063 application note
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Rectifier
Abstract: 10DF2 10DF4 10DF6 10DF8 11DF4
Text: £07 ,_/£ii£i/J ^^rni-C-onauctoi Li na. Cx TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Rectifiers Ultra-Fast Recovery 1 to 6.6 Amps Plrt Number VRWM <F(AV) « TC VFII« "F(AV) (V) W" "true
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100F1
10DF2
10DF4
10DF6
10DF8
11DF1
11DF2
11DF3
11DF4
DO-204AL
Rectifier
10DF2
10DF4
10DF6
10DF8
11DF4
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Untitled
Abstract: No abstract text available
Text: REVISION B DESIGNED & DIMENSIONED IN MILLIMETERS[INCHES] UUSB-B-S-X-SM-TR TAPE AND REEL TYPE MICRO AB "A" 5.63 .221 REF TERMINATION -SM: SURFACE MOUNT CONFIGURATION -S: SINGLE 0.60 .024 MIN PLATING SPECIFICATION -S: MATE AREA .000030" MIN GOLD OVER .000050" MIN NICKEL
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Untitled
Abstract: No abstract text available
Text: REVISION G DESIGNED & DIMENSIONED IN MILLIMETERS[INCHES] DO NOT SCALE FROM THIS PRINT UUSB-B-S-X-SM-TR 0.60 .024 MIN "A" TAPE AND REEL TYPE MICRO AB TERMINATION -SM: SURFACE MOUNT CONFIGURATION -S: SINGLE PLATING SPECIFICATION -S: 30 '' SELECTIVE GOLD ON CONTACT AREA,
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diode zener 5v1 55c
Abstract: c82 004 BZX79 5v1 c2v0 c4v3 zener BZX55 C82 004 diode c22225 C2V2 ZENER C2V2
Text: LESHAN RADIO COMPANY, LTD. 1. Feature&Dimension 1. DO-35 单 位: mm CATHODE BAND Φ0.5±0.1 29±1 3.8±0.2 29±1 Φ1.8±0.2 LESHAN RADIO COMPANY, LTD. 2.1 BZX55/C Series Zener Diodes 1) TYPE Zener Voltage range IZT for VZT2) Vznom mA Dynamic resistance rzjK at IZK
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DO-35
BZX55/C
BZX55/C0V8
BZX55/C2V0
BZX55/C2V2
BZX55/C2V4
85ion
10pcs/each
5000pcs/each
diode zener 5v1 55c
c82 004
BZX79 5v1
c2v0
c4v3 zener
BZX55
C82 004 diode
c22225
C2V2 ZENER
C2V2
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMRF1316N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This high ruggedness device is designed for use in high VSWR military, aerospace and defense, radar and radio communications applications. It is an
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MMRF1316N
MMRF1316NR1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMRF1007H Rev. 0, 12/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1007HR5 MMRF1007HSR5 RF power transistors designed for applications operating at frequencies
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MMRF1007H
MMRF1007HR5
MMRF1007HSR5
MMRF1007HR5
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR
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MRFE6VP5300N
MRFE6VP5300NR1
MRFE6VP5300GNR1
MRFE6VP5300NR1
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PT8A6311
Abstract: No abstract text available
Text: PT8A6301/6311 |
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PT8A6301/6311
PT8A6301
PT8A6301/PT8A6311
PT8A6311
occ11DE
PT0136-5
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PT8A6311SE
Abstract: transistor 9014 application 9014 transistor specification IC1 LM317 LM317 power supply 0.30 V. 20 amp PT8A6301WE rc car LM317 DIE lm317 SO-8 free of at89c51
Text: PT8A6301/6311 |
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PT8A6301/6311
PT8A6301
PT8A6311
125kHz
PT8A631PT8A6311DE
PT0136-5
PT8A6311SE
transistor 9014 application
9014 transistor specification
IC1 LM317
LM317 power supply 0.30 V. 20 amp
PT8A6301WE
rc car
LM317 DIE
lm317 SO-8
free of at89c51
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VR10K
Abstract: vr-10k Cosmosic Semiconductor HS9812R-PPM sot146ee7 sot163a power amp circuit diagram
Text: HS9812R-PPM PPM MULTIPLEX RECEIVER/DECODER GENERAL DESCRIPTION The hs9812 is a CMOS integrated circuit used for the pulse-position-modulation PPM stereo demodulator. It is designed for use in 2~3v infrared cordless headphones systems. FEATURE: Low voltage and low power consumption.
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HS9812R-PPM
hs9812
VR10K
VR10K
vr-10k
Cosmosic Semiconductor
HS9812R-PPM
sot146ee7
sot163a
power amp circuit diagram
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Untitled
Abstract: No abstract text available
Text: QMS-XXX-XX.XX-XX-D-X-XXX REVISION N No OF POSITIONS -026, -052, -078, -104, * -130 PER ROW (No OF POS / 26) x .840[21.34]) - .020[.51] REF LEAD STYLE -10 (SEE FIG. 1) -11 (SEE FIG. 1) -09.75 (SEE FIG. 4, SHEET 3) C1 C1-A-DC N (No OF POS / 26) x .840[21.34]) - .035[.89] REF
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T-1M19-XX
SUB-SC-03-10-FF
635mm
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250GX-0300-55-22
Abstract: Arlon AN1955 MRF6VP121KHR6 MRF6VP121KHSR6
Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed
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MRF6VP121KH
MRF6VP121KHR6
MRF6VP121KHSR6
250GX-0300-55-22
Arlon
AN1955
MRF6VP121KHSR6
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed
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MRF6VP121KH
MRF6VP121KHR6
MRF6VP121KHSR6
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250GX-0300-55-22
Abstract: MCGPR63V477M13X26-RH ATC100B360JT500XT ATC100B1R0CT500X MRF6VP121KH ATC100B1R0CT500XT ATC100B3R6CT500XT ATC100B100JT500X JESD22-A114 MRF6VP121KHR6
Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 2, 12/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed
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MRF6VP121KH
MRF6VP121KHR6
MRF6VP121KHSR6
250GX-0300-55-22
MCGPR63V477M13X26-RH
ATC100B360JT500XT
ATC100B1R0CT500X
MRF6VP121KH
ATC100B1R0CT500XT
ATC100B3R6CT500XT
ATC100B100JT500X
JESD22-A114
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BZX84
Abstract: c3v9 BZY88 CODE W4 BZY88 equivalent zener BZY88 equivalent C7V6 zener diode bzy88 C18-C20 c5v1
Text: i semiconductors FERRANTI BZX84 Series C2V7 to C47 J Silicon V o lta g e R egulator D iodes DESCRIPTION Silicon voltage regulator diodes designed fo r voltage reference and stabilizer applications. The series consists o f 31 types w ith nominal zener voltages ranging from 2 -7 V to 47V w ith a ± 5 % tolerance.
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BZX84
OT-23
BZY88.
OT-23
BZX84-C2V7
BZX84-C7V5
BZX84-C20
c3v9
BZY88
CODE W4
BZY88 equivalent zener
BZY88 equivalent
C7V6
zener diode bzy88
C18-C20
c5v1
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'JE D bbS3^31 00Eb7E'l 7S7 « A P X BZT03 SERIES l REGULATOR DIODES Glass passivated diodes in hermetically sealed axial-leaded glass envelopes. They are intended for use as voltage regulator and transient suppressor diode in medium power regulation and transient suppres
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00Eb7E
BZT03
BZT03-C7V5
BZT03-C510
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db3 c53
Abstract: db3 c54 C2096 108 c42
Text: Philips Semiconductors Objective specification LCD controllers/drivers PCF2119X 17 BONDING PAD LOCATIONS du m m y Vs s R16 R15 R14 R13 R12 R11 R10 R9 R18 Cl C2 C3 C4 C5 C6 C7 C8 C9 C 10 SCL T3 POR PD SDA SDA □ □ □ □ □ □ □ □ □ □ 108 109
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PCF2119X
58x78
db3 c53
db3 c54
C2096
108 c42
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