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    105 35K 105 Price and Stock

    Kyocera AVX Components 12105C335KAT2A

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 3.3uF X7R 1210 1 0%
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    Mouser Electronics 12105C335KAT2A 8,031
    • 1 $0.64
    • 10 $0.305
    • 100 $0.214
    • 1000 $0.196
    • 10000 $0.151
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    Kyocera AVX Components TAJA105K035KNJ

    Tantalum Capacitors - Solid SMD 35V 1uF 1206 ESR=7.5 ohm +/-10%
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    Mouser Electronics TAJA105K035KNJ 7,790
    • 1 $0.91
    • 10 $0.659
    • 100 $0.47
    • 1000 $0.431
    • 10000 $0.277
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    Kyocera AVX Components 12105C335K4Z4A

    Multilayer Ceramic Capacitors MLCC - SMD/SMT KAF32LR71H335KL NW G LOB PN 50V 206uF X7R A 581-KAF32LR71H335KL
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    Mouser Electronics 12105C335K4Z4A 4,409
    • 1 $0.76
    • 10 $0.539
    • 100 $0.37
    • 1000 $0.259
    • 10000 $0.216
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    Kyocera AVX Components 12105C335K4T2A

    Multilayer Ceramic Capacitors MLCC - SMD/SMT KAM32LR71H335KU NEW GLOBAL PN 50V 3.3uF A 581-KAM32LR71H335KU
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    Mouser Electronics 12105C335K4T2A 1,001
    • 1 $0.63
    • 10 $0.437
    • 100 $0.3
    • 1000 $0.235
    • 10000 $0.188
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    Kyocera AVX Components 12105C335KAZ2A

    Multilayer Ceramic Capacitors MLCC - SMD/SMT KGF32LR71H335KU NEW GLOBAL PN 50V 3.3uF A 581-KGF32LR71H335KU
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    Mouser Electronics 12105C335KAZ2A 91
    • 1 $0.96
    • 10 $0.742
    • 100 $0.638
    • 1000 $0.393
    • 10000 $0.341
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    Find more 105 35K 105 price and stock on Findchips.com

    105 35K 105 Datasheets Context Search

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    105 35K capacitor

    Abstract: compressor limiter THAT2180 49K9 THAT2252 C222U THAT2180C 1N4148 C422u LT1054
    Text: 1 THAT Corporation Design Note 105 Low Voltage Compressor / Limiter The following circuit is a standard compressor / limiter adapted to run off +5 volts and -4 volts. A Linear Technology LT1054 is used to generate the -4 volt rail as shown in Figure 2. C14 47p


    Original     		LT1054 THAT2180C V15k0 THAT2252 1N4148 V1k43 1N4148Figure -15dB 105 35K capacitor compressor limiter THAT2180 49K9 C222U THAT2180C 1N4148 C422u PDF

    Untitled

    Abstract: No abstract text available
    Text: HM-TRP-RS232 Series 100mW Transceiver modules V1.0 1. General HM-TRP series is a low cost, high performance transparent FSK transceiver with operating at 433/470/868/915 MHz. It features small size, high output power, high sensitivity, long transmission distance and high


    Original     		HM-TRP-RS232 100mW RS-232 HM-TRP-RS232 PDF

    capacitor 226 35K

    Abstract: 105 35K capacitor 226 35K capacitor capacitor 104 Z30 electrolytic capacitor 226 35k capacitor 104 35k
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.


    Original     		MRF21120 MRF21120S capacitor 226 35K 105 35K capacitor 226 35K capacitor capacitor 104 Z30 electrolytic capacitor 226 35k capacitor 104 35k PDF

    HM-TRP-RS485-433

    Abstract: No abstract text available
    Text: HM-TRP-RS485 Series 100mW Transceiver modules V1.0 1. General HM-TRP series is a low cost, high performance transparent FSK transceiver with operating at 433/470/868/915 MHz. It features small size, high output power, high sensitivity, long transmission distance and high


    Original     		HM-TRP-RS485 100mW RS-485 HM-TRP-RS485 HM-TRP-RS485-433 PDF

    226 35K capacitor

    Abstract: capacitor 226 35K C40 Sprague 105 35K capacitor R 226 35k
    Text: Freescale Semiconductor Technical Data Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		MRF21120R6 226 35K capacitor capacitor 226 35K C40 Sprague 105 35K capacitor R 226 35k PDF

    226 35K capacitor

    Abstract: capacitor 226 35K R 226 35k
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		2170fficiency, MRF21120 MRF21120S 226 35K capacitor capacitor 226 35K R 226 35k PDF

    226 35K

    Abstract: 226 35K capacitor capacitor 226 35K electrolytic capacitor 226 35k 226 35K 649 226 35K 750 gps-500 105 35K capacitor R 226 35k
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		MRF21120 226 35K 226 35K capacitor capacitor 226 35K electrolytic capacitor 226 35k 226 35K 649 226 35K 750 gps-500 105 35K capacitor R 226 35k PDF

    HM-TRP-433

    Abstract: No abstract text available
    Text: HM-TRP Series 100mW Transceiver modules V1.0 1. General HM-TRP series is a low cost, high performance transparent FSK transceiver with operating at 433/470/868/915 MHz. It features small size, high output power, high sensitivity, long transmission distance and high


    Original     		100mW HM-TRP-433 PDF

    HM-TRP-433

    Abstract: HM-TRP-915 HM-TR HM-TRP-433D MAX3232 smd HM-TRP-868 04BYTE HM-TRP-868D tx module 434 105 35K 102
    Text: HM-TRP Series 100mW Transceiver modules V1.0 1. General HM-TRP series is a low cost, high performance transparent FSK transceiver with operating at 433/470/868/915 MHz. It features small size, high output power, high sensitivity, long transmission distance and high


    Original     		100mW HM-TRP-433 HM-TRP-915 HM-TR HM-TRP-433D MAX3232 smd HM-TRP-868 04BYTE HM-TRP-868D tx module 434 105 35K 102 PDF

    z40 mosfet

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF21120R6 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110


    Original     		MRF21120/D MRF21120R6 MRF21120/D z40 mosfet PDF

    capacitor 226 35K

    Abstract: R 226 35k 226 35K capacitor
    Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110


    Original     		MRF21120/D MRF21120 MRF21120/D capacitor 226 35K R 226 35k 226 35K capacitor PDF

    capacitor 226 35K

    Abstract: 226 35K capacitor
    Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to


    Original     		MRF21120/D MRF21120 MRF21120S capacitor 226 35K 226 35K capacitor PDF

    226 35K capacitor

    Abstract: MRF21120 z40 mosfet 226 35K capacitor 226 35K
    Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110


    Original     		MRF21120/D MRF21120 226 35K capacitor MRF21120 z40 mosfet 226 35K capacitor 226 35K PDF

    capacitor 106 35K

    Abstract: capacitor 226 35K 022 electrolytic 226 35K capacitor 226 35K capacitor 106 35K tantalum 105 35K capacitor capacitor 106 35K electrolytic 226 35K capacitor 106 35K 045 226 35K capacitor datasheet
    Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to


    Original     		MRF21120/D MRF21120 MRF21120S MRF21120 capacitor 106 35K capacitor 226 35K 022 electrolytic 226 35K capacitor 226 35K capacitor 106 35K tantalum 105 35K capacitor capacitor 106 35K electrolytic 226 35K capacitor 106 35K 045 226 35K capacitor datasheet PDF

    226 35K

    Abstract: capacitor 226 35K capacitor 226 35K 022 electrolytic 105 35K capacitor 226 35K capacitor datasheet gps m 89 pin configuration 105 35K capacitor datasheet 226 35K capacitor marking us capacitor pf l1 MRF21120
    Text: Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		MRF21120 MRF21120R6 226 35K capacitor 226 35K capacitor 226 35K 022 electrolytic 105 35K capacitor 226 35K capacitor datasheet gps m 89 pin configuration 105 35K capacitor datasheet 226 35K capacitor marking us capacitor pf l1 MRF21120 PDF

    capacitor 106 35K

    Abstract: 226 35K 106 35K capacitor 106 35K tantalum capacitor 106 35K electrolytic 105 35K capacitor MRF21120R6 capacitor 226 35K
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF21120R6 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET


    Original     		MRF21120/D MRF21120R6 capacitor 106 35K 226 35K 106 35K capacitor 106 35K tantalum capacitor 106 35K electrolytic 105 35K capacitor MRF21120R6 capacitor 226 35K PDF

    c38 transistor

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF21120 Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		MRF21120 MRF21120R6 c38 transistor PDF

    226 35K capacitor

    Abstract: 226 35K R 226 35k 029 capacitor 226 35K capacitor 105 35K 102 capacitor 104 35k R 226 35k 029 R variable capacitor 105 35K capacitor fm variable capacitor
    Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to


    Original     		MRF21120/D MRF21120 MRF21120S MRF21120 226 35K capacitor 226 35K R 226 35k 029 capacitor 226 35K capacitor 105 35K 102 capacitor 104 35k R 226 35k 029 R variable capacitor 105 35K capacitor fm variable capacitor PDF

    A4514

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		MRF21120 MRF21120R6 A4514 PDF

    226 35K capacitor

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF21120 Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		MRF21120 MRF21120R6 226 35K capacitor PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110


    Original     		MRF21120/D MRF21120 MRF21120S MRF21120 PDF

    IRFD110

    Abstract: IRF5134 IRF120 IRF540 1RF542 IRF510 IRF522 IRF611-3 IRFD1Z3 IRF143
    Text: _ THOnSON/ D I S TRIBUTOR 5fiE D • 105^573 0005705 35k ■ TCSK P o w er M O S FE T s IR F -S e rie s P o w e r M O S FE T s — N -C h a n n e l Package Maximum Ratings BV q s s V IDS (A) 'DS(O N) OHMS 60 0.40 0.50 0.80 1 1.1 1.3 3 3.50 3.50 4 5


    OCR Scan     		O-247 O-204 O-205 O-220 IRFD113 IRFD111 IRFD123 IRFD121 IRFF113 IRFF111 IRFD110 IRF5134 IRF120 IRF540 1RF542 IRF510 IRF522 IRF611-3 IRFD1Z3 IRF143 PDF

    IRF510

    Abstract: irf540
    Text: _ THOnSON/ D I S TRIBUTOR 5fiE D • 105^573 0005705 35k ■ TCSK P o w er M O S FE T s IR F -S e rie s P o w e r M O S FE T s — N -C h a n n e l Package Maximum Ratings BV q s s V IDS (A) 'DS(O N) OHMS 60 0.40 0.50 0.80 1 1.1 1.3 3 3.50 3.50 4 5


    OCR Scan     		4-PIn80 IRFD113 IRFD111 IRFD123 IRFD121 IRFF113 IRFF111 IRF513 IRF511 IRFF123 IRF510 irf540 PDF

    D53C1

    Abstract: clarostat POTENTIOMETER dual 500k RV4 CLAROSTAT marking 53C AE30 spst clarostat POTENTIOMETER 380c1 5k clarostat POTENTIOMETER DPST-3A-125 clarostat 53c1 RV4NAYSD500A
    Text: S e r ie s 380, 53/RV 4, 485 2 Watt, Conductive Plastic Potentiom eter S e r ie s 3 80, 5 3/RV4. 485, E le c tr ic a l S p e c it ic a t io n s Resistance Range 50i2 to 5 Megohms, linear. 250Q to 2.5 Megohms, tapered. 485 series only, 100i2 to 2.5 Megohm, linear.


    OCR Scan     		53/RV 100i2 500KQ 500Ki2 D53C1 clarostat POTENTIOMETER dual 500k RV4 CLAROSTAT marking 53C AE30 spst clarostat POTENTIOMETER 380c1 5k clarostat POTENTIOMETER DPST-3A-125 clarostat 53c1 RV4NAYSD500A PDF