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    106PS Price and Stock

    Amphenol Industrial Operations PT06E-10-6P(SR)

    CONN PLUG MALE 6P GOLD SLDR CUP
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    DigiKey PT06E-10-6P(SR) Bulk 620 1
    • 1 $22.4
    • 10 $19.618
    • 100 $17.5594
    • 1000 $16.10616
    • 10000 $16.10616
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    Newark PT06E-10-6P(SR) Bulk 329 1
    • 1 $31.81
    • 10 $29.51
    • 100 $21.87
    • 1000 $21.48
    • 10000 $21.48
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    PEI Genesis PT01A10-6P-SR

    PT 6C 6#20 PIN RECP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PT01A10-6P-SR Bag 499 1
    • 1 $36.97
    • 10 $32.04
    • 100 $22.18
    • 1000 $22.18
    • 10000 $22.18
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    PEI Genesis PT06A10-6P-SR-LC

    CONN PLUG HSG MALE 6POS INLINE
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    DigiKey PT06A10-6P-SR-LC Bulk 499 1
    • 1 $31.22
    • 10 $27.06
    • 100 $18.73
    • 1000 $18.73
    • 10000 $18.73
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    Amphenol Industrial Operations PT01A-10-6P(SR)

    CONN RCPT MALE 6P GOLD SLDR CUP
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    DigiKey PT01A-10-6P(SR) Bulk 127 1
    • 1 $27.6
    • 10 $24.167
    • 100 $21.6307
    • 1000 $19.84054
    • 10000 $19.84054
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    Newark PT01A-10-6P(SR) Bulk 55 1
    • 1 $34.59
    • 10 $32.37
    • 100 $26.59
    • 1000 $25.09
    • 10000 $25.09
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    RS PT01A-10-6P(SR) Bulk 236 1
    • 1 $30.16
    • 10 $25.18
    • 100 $23.22
    • 1000 $23.22
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    Interstate Connecting Components PT01A-10-6P(SR) 398
    • 1 $29.6544
    • 10 $26.689
    • 100 $23.9005
    • 1000 $23.9005
    • 10000 $23.9005
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    PT01A-10-6P(SR)
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    Master Electronics PT01A-10-6P(SR) 63
    • 1 $29.85
    • 10 $23.95
    • 100 $21.1
    • 1000 $19.36
    • 10000 $19.36
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    PEI Genesis PT06P10-6P-SR

    PT 6C 6#20 PIN PLUG
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PT06P10-6P-SR Bag 114 1
    • 1 $39.15
    • 10 $33.93
    • 100 $23.49
    • 1000 $23.49
    • 10000 $23.49
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    Find more 106PS price and stock on Findchips.com

    106PS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Valox 420-SEO

    Abstract: "valox 420 seo" valox 420 seo 106psi 280OC valox 420 420seo samtec 400o
    Text: Valox 420-SEO - Mechanical @ 73o F 23o C - Tensile Strength at Break:17 (117) x 103 psi (MPa) - Tensile Modulus: 1.1 x 106psi - Thermal - Heat Deflection Temperature: -264 psi, 1.82 N/mm2 : 400o F (204oC) - Melting Point: 536oF (280oC)XXXXX - Electrical - Volume Resistivity: 3.4 x 1015 ohm-cm


    Original     		PDF 420-SEO 106psi 204oC) 536oF 280oC UL94VO Valox 420-SEO "valox 420 seo" valox 420 seo valox 420 420seo samtec 400o

    280OC

    Abstract: No abstract text available
    Text: Valox DR-48 - Mechanical @ 73o F 23o C - Tensile Strength at Break:13.5 (93) x 103 psi (MPa) - Tensile Modulus: .73 x 106psi - Thermal - Heat Deflection Temperature: -264 psi, 1.82 N/mm2 : 360o F (182oC) - Melting Point: 536oF (280oC)XXXXX - Electrical - Volume Resistivity: 3.6 x 1016 ohm-cm


    Original     		PDF DR-48 106psi 182oC) 536oF 280oC UL94VO

    106psi

    Abstract: No abstract text available
    Text: Vecta E130 - Mechanical @ 73o F 23o C - Tensile Strength at Break:18 (124) x 103 psi (MPa) - Tensile Modulus: 2.0 (14) x 106psi (Gpa) - Thermal - Heat Deflection Temperature: -264 psi, 1.82 N/mm2 : 518o F (270oC) - Melting Point: 670oF (355oC) - Electrical


    Original     		PDF 106psi 270oC) 670oF 355oC) 47kV/mm) UL94VO 106psi

    S1D15719

    Abstract: S1D15722D01B S1D15719D22B S1D15714D01E s1d13517 S1D15722 Matrix CCD "line sensor" Epson epd driving S1D15712 S1D15721D01B
    Text: CMOS LSIs Product Catalog 2009 SEIKO EPSON CORPORATION CMOS LSIs Contents Configuration of product number . 2 1 ASICs Application Specific IC 1-1 Gate Arrays . 4


    Original     		PDF S1L70000 S1L60000 S1L50000 S1L30000 16-bit 32-bit S1D15719 S1D15722D01B S1D15719D22B S1D15714D01E s1d13517 S1D15722 Matrix CCD "line sensor" Epson epd driving S1D15712 S1D15721D01B

    S1L50552

    Abstract: tcon mini-lvds EPSON tcon S1X65263 tcon 17 epson s1k500 SMART ASIC 197 S1K60000 S1L50062 UXGA tcon
    Text: ASICs Gate Arrays / Embedded Arrays / Standard Cells 2010 Our goal in the Epson Semiconductor Operations Division is to be a true partner for you, by looking to give you an edge in product development through our concept of "+less design". Gate Arrays / Embedded Arrays / Standard Cells


    Original     		PDF S1L60173F00A000 S1L50552 tcon mini-lvds EPSON tcon S1X65263 tcon 17 epson s1k500 SMART ASIC 197 S1K60000 S1L50062 UXGA tcon

    EDE5108AJSE-6E-E

    Abstract: EDE5104AJSE EDE5104AJSE-8E-E EDE5108AJSE EDE5116AJSE ELPIDA DDR2 SDRAM
    Text: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5104AJSE 128M words x 4 bits EDE5108AJSE (64M words × 8 bits) EDE5116AJSE (32M words × 16 bits) Specifications Features • Density: 512M bits • Organization  32M words × 4 bits × 4 banks (EDE5104AJSE)


    Original     		PDF EDE5104AJSE EDE5108AJSE EDE5116AJSE EDE5104AJSE) EDE5108AJSE) EDE5116AJSE) 60-ball EDE5104/08AJSE) 84-ball EDE5108AJSE-6E-E EDE5104AJSE EDE5104AJSE-8E-E EDE5108AJSE EDE5116AJSE ELPIDA DDR2 SDRAM

    DDR2-667

    Abstract: DDR2-800 EDE5108AJBG-8E-E EBE11UD8AJUA-6E-E SSTL-18
    Text: PRELIMINARY DATA SHEET 1GB DDR2 SDRAM SO-DIMM EBE11UD8AJUA 128M words x 64 bits, 2 Ranks Specifications Features • Density: 1GB • Organization ⎯ 128M words × 64 bits, 2 ranks • Mounting 16 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 200-pin socket type small outline dual in


    Original     		PDF EBE11UD8AJUA 200-pin 800Mbps/667Mbps M01E0107 E1083E10 DDR2-667 DDR2-800 EDE5108AJBG-8E-E EBE11UD8AJUA-6E-E SSTL-18

    DDR2-667

    Abstract: EDE5104AJSE-8E-E udqs
    Text: PRELIMINARY DATA SHEET 2GB Registered DDR2 SDRAM DIMM EBE21AD4AJFA 256M words x 72 bits, 2 Ranks Specifications Features • Density: 2GB • Organization  256M words × 72 bits, 2 ranks • Mounting 36 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory


    Original     		PDF EBE21AD4AJFA 240-pin 667Mbps cycles/64ms M01E0706 E1041E20 DDR2-667 EDE5104AJSE-8E-E udqs

    DDR2-667

    Abstract: DDR2-800 EDE1108ACSE-6E-E
    Text: DATA SHEET 2GB Unbuffered DDR2 SDRAM DIMM EBE21UE8ACFA 256M words x 64 bits, 2 Ranks Specifications Features • Density: 2GB • Organization  256M words × 64 bits, 2 ranks • Mounting 16 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory


    Original     		PDF EBE21UE8ACFA 240-pin 800Mbps/667Mbps cycles/64ms M01E0706 E1057E20 DDR2-667 DDR2-800 EDE1108ACSE-6E-E

    EDE5116AHSE

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5108AHSE 64M words x 8 bits EDE5116AHSE (32M words × 16 bits) Specifications Features • Density: 512M bits • Organization ⎯ 16M words × 8 bits × 4 banks (EDE5108AHSE) ⎯ 8M words × 16 bits × 4 banks (EDE5116AHSE)


    Original     		PDF EDE5108AHSE EDE5116AHSE EDE5108AHSE) EDE5116AHSE) 60-ball 84-ball 800Mbps/667Mbps/533Mbps/400Mbps EDE5116AHSE

    DDR2-667

    Abstract: EDE5104AJSE-8E-E EBE10AD4AJFA-6E-E max1546
    Text: PRELIMINARY DATA SHEET 1GB Registered DDR2 SDRAM DIMM EBE10AD4AJFA 128M words x 72 bits, 1 Rank Specifications Features • Density: 1GB • Organization  128M words × 72 bits, 1 rank • Mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory


    Original     		PDF EBE10AD4AJFA 240-pin 667Mbps cycles/64ms M01E0706 E1039E20 DDR2-667 EDE5104AJSE-8E-E EBE10AD4AJFA-6E-E max1546

    ASFLMB

    Abstract: ASDMB
    Text: Accelerate the speed of circuit design.Oscillators in seconds, not days! The MEMSpeed Pro oscillators operate down to 4mA with 1uA standby current! Introducing the MEMSpeed Pro, Low Power Oscillator Programmer. The Oscillator Programming Kit includes all hardware and software necessary for the user to easily program custom oscillator


    Original     		PDF 150MHz 000pcs/reel ASFLMB ASDMB

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 1G bits DDR2 SDRAM EDE1108AJBG-1 128M words x 8 bits EDE1116AJBG-1 (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization  16M words × 8 bits × 8 banks (EDE1108AJBG)  8M words × 16 bits × 8 banks (EDE1116AJBG)


    Original     		PDF EDE1108AJBG-1 EDE1116AJBG-1 EDE1108AJBG) EDE1116AJBG) 60-ball 84-ball 1066Mbps

    DDR2 SDRAM component

    Abstract: DDR2-800 E1295E40
    Text: DATA SHEET 1GB Unbuffered DDR2 SDRAM DIMM EBE10UE8AEFA 128M words x 64 bits, 1 Rank Specifications Features • Density: 1GB • Organization  128M words × 64 bits, 1 rank • Mounting 8 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory


    Original     		PDF EBE10UE8AEFA 240-pin EBE10UE8AEFA-xx-E) EBE10UE8AEFA-xx-F) 800Mbps/667Mbps M01E0706 E1295E40 DDR2 SDRAM component DDR2-800 E1295E40

    DDR2 DIMM 240 pin names

    Abstract: DDR2-667 EDE5104AJSE-8E-E EBE21AD4AJFA-6E-E EBE21AD4AJFA 2843ps
    Text: DATA SHEET 2GB Registered DDR2 SDRAM DIMM EBE21AD4AJFA 256M words x 72 bits, 2 Ranks Specifications Features • Density: 2GB • Organization  256M words × 72 bits, 2 ranks • Mounting 36 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory


    Original     		PDF EBE21AD4AJFA 240-pin 667Mbps cycles/64ms M01E0706 E1041E30 DDR2 DIMM 240 pin names DDR2-667 EDE5104AJSE-8E-E EBE21AD4AJFA-6E-E EBE21AD4AJFA 2843ps

    DDR2-667

    Abstract: EDE1108ACSE-6E-E
    Text: DATA SHEET 4GB Registered DDR2 SDRAM DIMM EBE42AE8ACFA 512M words x 72 bits, 4 Ranks Specifications Features • Density: 4GB • Organization  512M words × 72 bits, 4 ranks • Mounting 36 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory


    Original     		PDF EBE42AE8ACFA 240-pin 667Mbps cycles/64ms M01E0706 E1206E10 DDR2-667 EDE1108ACSE-6E-E

    E0901E20

    Abstract: EBE41AE4ABHA DDR2-667
    Text: DATA SHEET 4GB Registered DDR2 SDRAM DIMM EBE41AE4ABHA 512M words x 72 bits, 2 Ranks Specifications Features • Density: 4GB • Organization  512M words × 72 bits, 2 ranks • Mounting 36 pieces of 1G bits DDR2 SDRAM with sFBGA • Package: 240-pin socket type dual in line memory


    Original     		PDF EBE41AE4ABHA 240-pin 667Mbps cycles/64ms M01E0706 E0901E20 E0901E20 EBE41AE4ABHA DDR2-667

    EDE1116ACSE-6E-E

    Abstract: DDR2-667 DDR2-800 EDE1116ACSE-8E-E DDR2 sodimm pcb layout
    Text: DATA SHEET 1GB DDR2 SDRAM SO-DIMM EBE11UE6ACSA 128M words x 64 bits, 2 Ranks Specifications Features • Density: 1GB • Organization  128M words × 64 bits, 2 ranks • Mounting 8 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 200-pin socket type small outline dual in


    Original     		PDF EBE11UE6ACSA 200-pin 800Mbps/667Mbps cycles/64ms M01E0706 E1045E20 EDE1116ACSE-6E-E DDR2-667 DDR2-800 EDE1116ACSE-8E-E DDR2 sodimm pcb layout

    EDE1108AFBG

    Abstract: EDE1108AFBG-8E-F DDR2-667 DDR2-800 ELPIDA DDR2 SDRAM
    Text: PRELIMINARY DATA SHEET 1G bits DDR2 SDRAM EDE1108AFBG 128M words x 8 bits Specifications Features • Density: 1G bits • Organization  16M words × 8 bits × 8 banks • Package  60-ball FBGA  Lead-free (RoHS compliant) and Halogen-free • Power supply: VDD, VDDQ = 1.8V ± 0.1V


    Original     		PDF EDE1108AFBG 60-ball 800Mbps/667Mbps M01E0706 E1430E20 EDE1108AFBG EDE1108AFBG-8E-F DDR2-667 DDR2-800 ELPIDA DDR2 SDRAM

    E1060E20

    Abstract: EDE1108ACSE-6E-E DDR2-667 DDR2-800 EBE21EE8ACFA-8G-E
    Text: DATA SHEET 2GB Unbuffered DDR2 SDRAM DIMM EBE21EE8ACFA 256M words x 72 bits, 2 Ranks Specifications Features • Density: 2GB • Organization  256M words × 72 bits, 2 ranks • Mounting 18 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory


    Original     		PDF EBE21EE8ACFA 240-pin 800Mbps/667Mbps cycles/64ms M01E0706 E1060E20 E1060E20 EDE1108ACSE-6E-E DDR2-667 DDR2-800 EBE21EE8ACFA-8G-E

    E1296E40

    Abstract: DDR2-800 EBE21UE8AEFA-8G-F
    Text: DATA SHEET 2GB Unbuffered DDR2 SDRAM DIMM EBE21UE8AEFA 256M words x 64 bits, 2 Ranks Specifications Features • Density: 2GB • Organization  256M words × 64 bits, 2 ranks • Mounting 16 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory


    Original     		PDF EBE21UE8AEFA 240-pin EBE21UE8AEFA-xx-E) EBE21UE8AEFA-xx-F) 800Mbps/667Mbps M01E0706 E1296E40 E1296E40 DDR2-800 EBE21UE8AEFA-8G-F

    EDE5116AJBG-6E-E

    Abstract: EDE5116AJBG-8E-E EDE5116AJBG DDR2-667 DDR2-800 EDE5108AJBG EDE5108AJBG-6E-E EDE5108AJBG-8E-E EDE5116AJBG-8E ELPIDA DDR2 SDRAM
    Text: DATA SHEET 512M bits DDR2 SDRAM EDE5108AJBG 64M words x 8 bits EDE5116AJBG (32M words × 16 bits) Specifications Features • Density: 512M bits • Organization  16M words × 8 bits × 4 banks (EDE5108AJBG)  8M words × 16 bits × 4 banks (EDE5116AJBG)


    Original     		PDF EDE5108AJBG EDE5116AJBG EDE5108AJBG) EDE5116AJBG) 60-ball 84-ball 800Mbps/667Mbps EDE5116AJBG-6E-E EDE5116AJBG-8E-E EDE5116AJBG DDR2-667 DDR2-800 EDE5108AJBG EDE5108AJBG-6E-E EDE5108AJBG-8E-E EDE5116AJBG-8E ELPIDA DDR2 SDRAM

    DDR2-667

    Abstract: EDE5116AJBG
    Text: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM WTR Wide Temperature Range EDE5116AJBG-LI (32M words x 16 bits) Specifications Features • Density: 512M bits • Organization  8M words × 16 bits × 4 banks • Package  84-ball FBGA  Lead-free (RoHS compliant)


    Original     		PDF EDE5116AJBG-LI 84-ball 667Mbps M01E0706 E1172E20 DDR2-667 EDE5116AJBG

    ABT22V10-7A

    Abstract: ABT22V10-7D ABT22V10-7N
    Text: PROGRAMMABLE LOGIC PRODUCTS A B T 2 2 V 1 0 -7 c o m m e r c ia l A B T 2 2 V 1 0 A /B (MILITARY) Low noise, high drive, metastable immune, PLD Product specification (Commercial) Preliminary specification (Military) April 22, 1994 March 1994 Philips Semiconductors


    OCR Scan     		PDF ABT22V10-7 ABT22V1OA/B 7110fl2b ABT22V10 853-0173D 711Dfl2b ABT22V10-7A ABT22V10-7D ABT22V10-7N