all mosfet power amplifier
Abstract: 300w amplifier mosfet amplifier "RF MOSFET" 300W 300w fm amplifier FM500-108 500 W POWER AMPLIFIER power amplifier mosfet 300w rf amplifier Rf power transistor mosfet
Text: FM500-108 500 W FM RF Power Amplifier Designed for FM transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability. • • • • • • • • MOSFET Amplifier BW: 87.5 - 108 MHz
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FM500-108
40W267
all mosfet power amplifier
300w amplifier
mosfet amplifier
"RF MOSFET" 300W
300w fm amplifier
FM500-108
500 W POWER AMPLIFIER
power amplifier mosfet
300w rf amplifier
Rf power transistor mosfet
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FM300-108
Abstract: FM Amplifier 300w FM300 300w fm amplifier H101X 300w rf amplifier RF GAIN LTD
Text: FM300-108 300 W - FM Power Amplifier Designed for FM radio transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability. • • • • • • 87.5 - 108 MHz 48 Volts Input/Output 50 Ω
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FM300-108
40W267
FM300-108
FM Amplifier 300w
FM300
300w fm amplifier
H101X
300w rf amplifier
RF GAIN LTD
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transistor 1x 6 pin
Abstract: RAYTHEON CDMA2000-1X CDMA2000-1XRTT RMPA1759 RMPA1759-108 108 mhz rf linear board
Text: RF Components RMPA1759-108 Korean PCS 3V CDMA & CDMA2000-1X Power Amplifier Module ADVANCED INFORMATION Description Features The RMPA1759-108 power amplifier module PAM is designed for Korean CDMA and CDMA2000-1X personal communications system (PCS) applications. The 2 stage PAM is internally matched to 50
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RMPA1759-108
CDMA2000-1X
CDMA2000-1X
transistor 1x 6 pin
RAYTHEON
CDMA2000-1XRTT
RMPA1759
108 mhz rf linear board
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MS1281A
Abstract: transistor MS1281A W108 MS1281
Text: MS1281A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MS1281A is Designed for Class C, FM Broadcast Applications up to 108 MHz. FEATURES: PACKAGE STYLE .500 4L FLG • Class C Operation PG = 9.0 dB at 150 W/108 MHz Omnigold Metalization System
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MS1281A
MS1281A
112x45°
transistor MS1281A
W108
MS1281
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ASI10588
Abstract: FMB150
Text: FMB150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB150 is Designed for Class C, FM Broadcast Applications up to 108 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° • Class C Operation • PG = 9.0 dB at 150 W/108 MHz • Omnigold Metalization System
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FMB150
FMB150
112x45°
ASI10588
ASI10588
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88-108
Abstract: an power 88-108 mhz 88-108 mhz w power 88-108 mhz Power w
Text: FM 175 175 Watts, 28 Volts Broadcast 88 - 108 MHz GENERAL DESCRIPTION TheFM 175 is a high power COMMON EMITTER bipolar transistor. It is designed for pulsed systems in the frequency band 88-108 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest
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SD1460
Abstract: transistor j 108 ASI10588
Text: SD1460 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1460 is Designed for Class C, FM Broadcast Applications up to 108 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° • Class C Operation • PG = 9.0 dB at 150 W/108 MHz • Omnigold Metalization System
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SD1460
SD1460
112x45°
ASI10588
transistor j 108
ASI10588
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ASI10589
Abstract: FMB175 c 108 m 229
Text: FMB175 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB175 is Designed for Class C, FM Broadcast Applications up to 108 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN • Class C Operation • PG = 10 dB at 175 W/108 MHz • Omnigold Metalization System
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FMB175
FMB175
ASI10589
ASI10589
c 108 m 229
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88-108 mhz w power
Abstract: 88-108 an power 88-108 mhz 55ht fm emitter 88-108 mhz Power w 88-108mhz fm transistor
Text: FM 150 150 Watts, 28 Volts Broadcast 88 - 108 MHz GENERAL DESCRIPTION The FM 150 is a high power COMMON EMITTER bipolar transistor. It is designed for FM systems in the frequency band 88-108 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF.
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100Ma
88-108 mhz w power
88-108
an power 88-108 mhz
55ht
fm emitter
88-108 mhz Power w
88-108mhz
fm transistor
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ASI10587
Abstract: FMB075
Text: FMB075 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB075 is Designed for Class C, FM Broadcast Applications up to 108 MHz. PACKAGE STYLE .500 4L FLG .112x45° L A FEATURES: E FULL R • Class C Operation • PG = 10 dB at 75 W/108 MHz • Omnigold Metalization System
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FMB075
FMB075
112x45°
ASI10587
ASI10587
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TP9380
Abstract: transistor j 108
Text: TP9380 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TP9380 is Designed for Class C, FM Broadcast Applications up to 108 MHz. PACKAGE STYLE .500 4L FLG .112x45° L A FEATURES: E FULL R • Class C Operation • PG = 10 dB at 75 W/108 MHz • Omnigold Metalization System
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TP9380
TP9380
112x45°
transistor j 108
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tp9380
Abstract: No abstract text available
Text: TP93805 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TP9380 is Designed for Class C, FM Broadcast Applications up to 108 MHz. PACKAGE STYLE .500 4L FLG .112x45° L A FEATURES: E FULL R • Class C Operation • PG = 10 dB at 75 W/108 MHz • Omnigold Metalization System
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TP93805
TP9380
112x45°
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an power amplifier 108 mhz
Abstract: RAYTHEON RMPA2059 RMPA2059-108 7-day 108 mhz rf linear board
Text: RF Components RMPA2059-108 3V WCDMA Power Amplifier Module ADVANCED INFORMATION Description Features The RMPA2059-108 power amplifier module PAM is designed for WCDMA applications. The 2 stage PAM is internally matched to 50 ohms to minimize the use of external components and features a lowpower mode to reduce standby current and DC power consumption during peak phone usage. High
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RMPA2059-108
RMPA2059-108
an power amplifier 108 mhz
RAYTHEON
RMPA2059
7-day
108 mhz rf linear board
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VHB25-28F
Abstract: ASI10724
Text: VHB25-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28F is an NPN power transistor, designed for 108-175 MHZ applications. The device utilizes diffused emitter resistor to achieve good VSWR capability. PACKAGE STYLE .380 4L FLG FEATURES: B
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VHB25-28F
VHB25-28F
ASI10724
ASI10724
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VHB25-28S
Abstract: ASI10725
Text: VHB25-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28S is an NPN power transistor, designed 108-175 MHz applications. The device utilizes diffused emitter resistors to achieve good VSWR capability PACKAGE STYLE .380 4L STUD .112x45° A B
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VHB25-28S
VHB25-28S
112x45°
ASI10725
ASI10725
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Untitled
Abstract: No abstract text available
Text: FMB150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB150 is a high power transistor designed for FM broadcast system in 88-108 MHz range. It has diffused ballasting resistor to improve MTBF and VSWR capability. PACKAGE STYLE .500 4L FLG .112x45°
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FMB150
FMB150
112x45°
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SD1015
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1015 RF AND MICROWAVE TRANSISTORS 108–152MHz APPLICATIONS Features • • • • • • FM CLASS C TRANSISTOR FREQUENCY 150 MHz POWER OUT 30W POWER GAIN 10dB
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SD1015
152MHz
SD1015
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BLW31
Abstract: No abstract text available
Text: BLW31 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW31 is an NPN power transistor, designed 108-175 MHz applications. The device utilizes diffused emitter resistors to achieve good VSWR capability PACKAGE STYLE .380 4L STUD .112x45° A B C FEATURES:
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BLW31
BLW31
112x45°
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Untitled
Abstract: No abstract text available
Text: SD1015 RF AND MICROWAVE TRANSISTORS 108–152MHz APPLICATIONS • • • • • • FM CLASS C TRANSISTOR FREQUENCY 150 MHz POWER OUT 30W POWER GAIN 10dB GOLD METALLIZATION COMMON EMITTER DESCRIPTION: The SD1015 is a 28V gold metallized epitaxial silicon NPN planar
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SD1015
152MHz
SD1015
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SD1015
Abstract: No abstract text available
Text: SD1015 RF AND MICROWAVE TRANSISTORS 108–152MHz APPLICATIONS Features • • • • • • FM CLASS C TRANSISTOR FREQUENCY 150 MHz POWER OUT 30W POWER GAIN 10dB GOLD METALLIZATION COMMON EMITTER DESCRIPTION: The SD1015 is a 28V gold metallized epitaxial silicon NPN planar
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SD1015
152MHz
SD1015
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sot123 package
Abstract: BLF543 BLF221 sot 123 blf246b flange SOT-123
Text: 65 RF/Microwave Devices RF Power MOS Transistors cont. Type No. Package Outline Load Power (W) V DS (V) f (MHz) Source Gain (dB) 28 28 28 28 28 50 28 28 50 28 50 28 50 28 50 175 175 175 175 175 108 175 108 108 108 108 175 108 175 108 14 typ 13 13 13 14 19 typ
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BLF241
BLF242
BLF244
BLF245
BLF245B
BLF175
BLF246B
BLF246
BLF276
BLF147
sot123 package
BLF543
BLF221
sot 123
flange
SOT-123
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SOT123
Abstract: SOT-48 sot161 SOT160 SOT-123 BLV32F BFQ68 Applications BLV36 blw86 BLW76
Text: - 2 ,1-Ot,r RICHARDSON ELECTRONICS m* 3M « ir> 14E 0 7734flciö 0000503 T w -iw .« '» ir f if r r fff Transistors for Broadcast Applications Philips FM Broadcast 87-108 MHz Bipolar Ttansistors Load Power @108 MHz W Type Number Power Gain @ 108 MHz (dB)
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0000S
2N3866
O-39/1
BLW90
OT122
BLV21
OT123
BLW86*
BIX39*
SOT123
SOT-48
sot161
SOT160
SOT-123
BLV32F
BFQ68 Applications
BLV36
blw86
BLW76
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T119 A
Abstract: sot 122 SOT123 Package BLW78
Text: 63 RF/Microwave Devices Bipolar RF Transmitting Transistors SHF 900 - 960 MHz cont. Load Power (W) @ 900 MHz Power Gain (dB) @ 900 MHz Supply Voltage (V) 35* 50 50* 150(PEP)* 7* 8.5 8.1* 7.5* 24 26 26 26 Package Outline Load Power (W) @ 108 MHz Power Gain
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4-26V
BLV97CE
BLV101A
BLV101B
BLV948
OT-171,
OT-273,
OT-262A2,
2N3866
T119 A
sot 122
SOT123 Package
BLW78
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M113
Abstract: t4bu SD1013-3
Text: m âWt* Pr&<iuvt$ m Micmsemi 140 Commerce Drive Wlontgomeryviile, PA 18936-1013 Tel: 215 831-9840 SD1013-3 RF & MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS FM CLASS C TRANSISTOR FREQUENCY 150MHz VOLTAGE 2SV POWER OUT 10W POWER GAIN 10dB EFFICIENCY 55%TYP
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150MHz
SD1013-3
108-152MHz
M113
t4bu
SD1013-3
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