Untitled
Abstract: No abstract text available
Text: Si8461DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.100 at VGS = - 4.5 V - 3.7 0.118 at VGS = - 2.5 V - 3.4 0.140 at VGS = - 1.8 V - 3.1 0.205 at VGS = - 1.5 V -2 Qg (Typ.) 9.5 nC • Halogen-free According to IEC 61249-2-21
|
Original
|
Si8461DB
2002/95/EC
Si8461DB-T2-E1
11-Mar-11
|
PDF
|
SUD25N15-52
Abstract: SUD25N15-52-E3
Text: SUD25N15-52 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.052 at VGS = 10 V 25 0.060 at VGS = 6 V 23 • • • • • TrenchFET Power MOSFET 175 °C Junction Temperature PWM Optimized
|
Original
|
SUD25N15-52
2002/95/EC
O-252
SUD25N15-52-E3
11-Mar-11
SUD25N15-52
SUD25N15-52-E3
|
PDF
|
SQM40N15-38-GE3
Abstract: 1464 MOSFET
Text: SQM40N15-38 Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 150 RDS(on) (Ω) at VGS = 10 V 0.038 RDS(on) (Ω) at VGS = 6 V 0.040 ID (A) • TrenchFET Power MOSFET
|
Original
|
SQM40N15-38
AEC-Q101
2002/95/EC
O-263
SQM40N15-38-GE3
18-Jul-08
SQM40N15-38-GE3
1464 MOSFET
|
PDF
|
Si7617DN
Abstract: SI7617 SI7617DN-T1-GE3
Text: New Product Si7617DN Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d, g 0.0123 at VGS = - 10 V - 35 0.0222 at VGS = - 4.5 V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
Si7617DN
2002/95/EC
Si7617DN-T1-GE3
18-Jul-08
SI7617
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 66 FLAMABILITY RATING: UL94-V0 COLOR: WHITE CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: TIN QUALITY CLASS: 25 MATING CYCLES PITCH: 2.50MM A ENVIRONMENTAL OPERATING TEMPERATURE: -25 UP TO 85°C
|
Original
|
UL94-V0
10-AUG-09
|
PDF
|
B4M1
Abstract: 106 M1
Text: Package Information Vishay Siliconix PolarPAK 1215 CASE OUTLINE E T4 T5 T4 T5 T1 T2 K2 A c T3 K2 K1 c1 H1 T3 b4 b1 b4 b2 M5 H4 M3 M4 D G b3 P1 S H2 M2 b4 A1 b4 M1 D H3 Z Detail Z T7 T7 T6 T8 DIM. T7 T8 MIN. 0.66 0.00 0.40 0.40 0.96 0.10 A A1 b1 b2 b3 b4
|
Original
|
T09-0613-Rev.
10-Aug-09
B4M1
106 M1
|
PDF
|
Si5402DC
Abstract: No abstract text available
Text: Si5402DC Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V ± 6.7 0.055 at VGS = 4.5 V ± 5.3 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC
|
Original
|
Si5402DC
2002/95/EC
Si5402DC-T1-E3
Si5402DC-T1-GE3
18-Jul-08
|
PDF
|
AN811
Abstract: S0915
Text: Si5475DC Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.031 at VGS = - 4.5 V - 7.6 - 12 0.041 at VGS = - 2.5 V - 6.6 0.054 at VGS = - 1.8 V - 5.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
|
Original
|
Si5475DC
2002/95/EC
Si5475DC-T1-E3
Si5475DC-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
AN811
S0915
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SUP28N15-52 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.052 at VGS = 10 V 28 0.060 at VGS = 6 V 26 • • • • TrenchFET Power MOSFET 175 °C Junction Temperature PWM Optimized Compliant to RoHS Directive 2002/95/EC
|
Original
|
SUP28N15-52
2002/95/EC
O-220AB
SUP28N15-52
11-Mar-11
|
PDF
|
Si5475DC
Abstract: No abstract text available
Text: Si5475DC Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.031 at VGS = - 4.5 V - 7.6 - 12 0.041 at VGS = - 2.5 V - 6.6 0.054 at VGS = - 1.8 V - 5.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
|
Original
|
Si5475DC
2002/95/EC
Si5475DC-T1-E3
Si5475DC-T1-GE3
18-Jul-08
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SUD25N15-52 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.052 at VGS = 10 V 25 0.060 at VGS = 6 V 23 • • • • • TrenchFET Power MOSFET 175 °C Junction Temperature PWM Optimized
|
Original
|
SUD25N15-52
2002/95/EC
O-252
SUD25N15-52-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiB417EDK Vishay Siliconix P-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.058 at VGS = - 4.5 V - 9.0a 0.080 at VGS = - 2.5 V - 9.0a 0.100 at VGS = - 1.8 V - 4.0 0.130 at VGS = - 1.5 V - 2.0 0.250 at VGS = - 1.2 V - 0.5
|
Original
|
SiB417EDK
SC-75
2002/95/EC
SC-75-6L-Single
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SUP28N15-52 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.052 at VGS = 10 V 28 0.060 at VGS = 6 V 26 • • • • TrenchFET Power MOSFET 175 °C Junction Temperature PWM Optimized Compliant to RoHS Directive 2002/95/EC
|
Original
|
SUP28N15-52
2002/95/EC
O-220AB
SUP28N15-52
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiR432DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0306 at VGS = 10 V 28.4 0.0327 at VGS = 7.5 V 27.5 VDS (V) 100 Qg (Typ.) 15.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
SiR432DP
2002/95/EC
SiR432DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: SiB417EDK Vishay Siliconix P-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.058 at VGS = - 4.5 V - 9.0a 0.080 at VGS = - 2.5 V - 9.0a 0.100 at VGS = - 1.8 V - 4.0 0.130 at VGS = - 1.5 V - 2.0 0.250 at VGS = - 1.2 V - 0.5
|
Original
|
SiB417EDK
SC-75
2002/95/EC
SC-75-6L-Single
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SUP28N15-52 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.052 at VGS = 10 V 28 0.060 at VGS = 6 V 26 • • • • TrenchFET Power MOSFET 175 °C Junction Temperature PWM Optimized Compliant to RoHS Directive 2002/95/EC
|
Original
|
SUP28N15-52
2002/95/EC
O-220AB
SUP28N15-52
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product Si4186DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0026 at VGS = 10 V 35.8 0.0032 at VGS = 4.5 V 32.2 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
Si4186DY
2002/95/EC
Si4186DY-T1-GE3
11-Mar-11
|
PDF
|
ts4805
Abstract: No abstract text available
Text: 7 TH IS DRAW ING IS U N P U B L IS H E D . RE LEA S E D FOR 6 5 4 3 2 PU B LIC ATIO N LOC ALL INTERNATIONAL RIGHTS RESERVED. COPYRIGHT - CM BY TYCO ELECTRONICS CORPORATION. R E VIS IO N S D IS T 53 LTR D E S C R IP T IO N REVISED PER DIMENSIONS DATE 10AUG09
|
OCR Scan
|
10AUG09
ts4805
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. LPU COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 6 5 4 3 2 - R E V IS IO N S ALL INTERNATIONAL RIGHTS RESERVED. P LTR D DESCRIPTION REV PER ECO—0 9 —017741 DATE DWN APVD 10AUG09 DH DY 1\ MATERIAL: HOUSING: POLYESTER, GRAY. UL 9 4 V - 0 .
|
OCR Scan
|
10AUG09
APPLI10CT04
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. WH COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 6 4 3 2 - REVISIONS ALL RIGHTS RESERVED. P LTR G DESCRIPTION REV PER ECO—0 9 —017741 DATE DWN APVD 10AUG09 DH DY MATERIAL: HOUSING: POLYESTER. COLOR: GRAY. UL 9 4 V - 0 .
|
OCR Scan
|
10AUG09
27jum
08jum
76jum
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 7 TH IS DRAW ING IS U N P U B L IS H E D . RE LEA S E D FOR 4 6 3 2 PU B LIC ATIO N LOC ALL INTERNATIONAL RIGHTS RESERVED. COPYRIGHT - CM BY TYCO ELECTRONICS CORPORATION. R E VIS IO N S D IS T 53 LTR D E S C R IP T IO N REVISED PER DIMENSIONS DATE DWN 10AUG09
|
OCR Scan
|
10AUG09
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. LPU COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 6 5 4 3 2 - ALL INTERNATIONAL RIGHTS RESERVED. LOC DIST AD 00 R E V IS IO N S P LTR D DESCRIPTION REV PER ECO—0 9 —017741 DATE DWN APVD 10AUG09 DH
|
OCR Scan
|
10AUG09
27jum
T-001
199TH
080CT04
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION 6 5 4 3 2 - ALL RIGHTS RESERVED. LOC DIST AD 00 R E V IS IO N S P LTR G DESCRIPTION REV PER E C O — 0 9 —0 1 7 7 4 1 DATE DWN APVD 10AUG09 DH DY MATERIAL: HOUSING: POLYESTER. COLOR: GRAY. UL 9 4 V - 0 .
|
OCR Scan
|
10AUG09
27jum
31MAR2000
100CT01
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 6 - ALL RIGHTS RESERVED. D C 3.13 B A D AMP 4805 REV 31MAR2000 C AYOU 4 5 2 1 REVISIONS LOC DIST AD 00 P LTR J ZlX £A 3A Z4A REV PER ECO—0 9 —017741
|
OCR Scan
|
31MAR2000
10AUG09
27jum
08jum
76/jm
080CT01
|
PDF
|