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    10N70 Price and Stock

    MERITEK Electronics Corporation MFT10N70P56

    MOSFET - PPAK5X6 100V 70A N-Chan
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    DigiKey MFT10N70P56 100 10
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    • 10 $1
    • 100 $0.95
    • 1000 $0.8
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    Panduit Corp PRS0710N7046

    7X10 NOTICE EMPLOYEES ONLY...
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    DigiKey PRS0710N7046 Bulk 8 1
    • 1 $6.96
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    Phihong USA PDA010N-700B

    LED DVR CC AC/DC 10-14.3V 700MA
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    DigiKey PDA010N-700B Bulk
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    SOURIAU-SUNBANK S3141A2810N70

    Circular MIL Spec Backshells STS ASSEMBLY
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    Mouser Electronics S3141A2810N70
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    Balluff Inc BAM02TL (ALTERNATE: BAM SE-XA-005-2,35X1,0-N70-1)

    for sealing media-contacting products | Balluff BAM02TL
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    RS BAM02TL (ALTERNATE: BAM SE-XA-005-2,35X1,0-N70-1) Bulk 1
    • 1 $17.84
    • 10 $17.84
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    10N70 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    10N70

    Abstract: MOSFET 700V 10A 10N70L mosfet 350v 10A 700v 10A mosfet 10N70L-TF1-T 700V mosfet driver
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N70 Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 10N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a


    Original     		PDF 10N70 10N70 O-220F O-220F1 QW-R502-572 MOSFET 700V 10A 10N70L mosfet 350v 10A 700v 10A mosfet 10N70L-TF1-T 700V mosfet driver

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary 10N70Z-Q Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N70Z-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a


    Original     		PDF 10N70Z-Q 10N70Z-Q 10N70ZL-TF1-T 10N70ZG-TF1-T QW-R502-B20

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N70Z Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N70Z is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a


    Original     		PDF 10N70Z 10N70Z QW-R502-935

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N70-C Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N70-C is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a


    Original     		PDF 10N70-C 10N70-C 10N70L-TF3-Tat QW-R502-A80

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N70 Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 10N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a


    Original     		PDF 10N70 10N70 O-220F O-220F1 QW-R502-572

    Untitled

    Abstract: No abstract text available
    Text: 10N70 UNISONIC TECHNOLOGIES CO., LTD Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET 1  DESCRIPTION TO-220F The UTC 10N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a


    Original     		PDF 10N70 O-220F 10N70 O-220F1 QW-R502-572

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N70K Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N70K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.


    Original     		PDF 10N70K 10N70K 10N70KL-TF1-T 10N70KG-TF1-T O-220F1 QW-R502-A69

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N70-Q Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET 1  DESCRIPTION TO-220F The UTC 10N70-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a


    Original     		PDF 10N70-Q O-220F 10N70-Q O-220F1 QW-R502-967.

    Untitled

    Abstract: No abstract text available
    Text: 10N70R/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description 10N70 series are specially designed as main switching devices for


    Original     		PDF AP10N70R/P AP10N70 265VAC O-220 O-262 O-220 10N70R

    10N70P

    Abstract: No abstract text available
    Text: 10N70R/P-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 650V RDS ON 0.6Ω ID G 10A S Description 10N70 series are specially designed as main switching devices for


    Original     		PDF AP10N70R/P-A AP10N70 265VAC O-220 O-262 O-220 10N70P 10N70P

    Untitled

    Abstract: No abstract text available
    Text: 10N70W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description 10N70 series are specially designed as main switching devices for


    Original     		PDF AP10N70W AP10N70 265VAC 10N70W

    Untitled

    Abstract: No abstract text available
    Text: 10N70W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement BVDSS 600V RDS ON 0.6 ID G 10A S Description 10N70 series are specially designed as main switching devices for


    Original     		PDF AP10N70W AP10N70 265VAC 10N70W

    10N70

    Abstract: No abstract text available
    Text: 10N70I-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D BVDSS RDS ON Fast Switching Characteristic Simple Drive Requirement ID G 650V 0.62 10A S Description Advanced Power MOSFETs from APEC provide the designer with


    Original     		PDF AP10N70I-A O-220CFM O-220CFM 10N70I 10N70

    g10a

    Abstract: marking codes transistors SSs
    Text: 10N70S RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description 10N70S is specially designed as main switching devices for universal


    Original     		PDF AP10N70S AP10N70S 265VAC O-263 O-263 10N70S g10a marking codes transistors SSs

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. 10N70W-HF-3 N-channel Enhancement-mode Power MOSFET 100% Avalanche-Tested D Simple Drive Requirement Fast Switching Performance G RoHS-compliant, halogen-free BV DSS 600V R DS ON 0.6Ω ID 10A S Description Advanced Power MOSFETs from APEC provide the designer with the best


    Original     		PDF AP10N70W-HF-3 AP10N70W-HF-3 AP10N70 10N70W

    10N70

    Abstract: 68A40
    Text: 10N70I-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 650V RDS ON 0.62Ω ID G 10A S Description Advanced Power MOSFETs from APEC provide the designer with


    Original     		PDF AP10N70I-A O-220CFM O-220CFM 10N70I 10N70 68A40

    Untitled

    Abstract: No abstract text available
    Text: 10N70S RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement BVDSS 600V RDS ON 0.6 ID G 10A S Description 10N70S is specially designed as main switching devices for universal


    Original     		PDF AP10N70S AP10N70S 265VAC O-263 O-263 10N70S

    Untitled

    Abstract: No abstract text available
    Text: 10N70R/P-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement BVDSS 650V RDS ON 0.6 ID G 10A S Description 10N70 series are specially designed as main switching devices for


    Original     		PDF AP10N70R/P-A AP10N70 265VAC O-220 O-262 O-220 10N70P

    ssh10n70

    Abstract: 10N70
    Text: N-CHANNEL POWER MOSFETS 10N70 FEATURES • • • • • • • T O -3 P Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF SSH10N70 10N70 ssh10n70 10N70