BY255P
Abstract: BY254P BY251P BY252P BY253P JESD22-B102 J-STD-002
Text: BY251P thru BY255P Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 µA • High forward surge capability • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC
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BY251P
BY255P
2002/95/EC
2002/96/EC
DO-201AD
DO-201AD,
18-Jul-08
BY255P
BY254P
BY252P
BY253P
JESD22-B102
J-STD-002
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WTC2310
Abstract: No abstract text available
Text: WTC2310 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 AMPERS 3 DRAIN DRAIN SOUCE VOLTAGE 60 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low RDS ON RDS(ON)<90mΩ@VGS=10V *Rugged and Reliable *Simple Drive Requirement *SC-59
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WTC2310
SC-59
05-May-05
SC-59
10-Nov-08
WTC2310
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WSL2816
Abstract: R0100 WSL2010 WSL2512 WSL-2512 WSL0603
Text: WSL Vishay Dale Power Metal Strip Resistors, Low Value down to 0.001 Ω , Surface Mount FEATURES • Ideal for all types of current sensing, voltage division and pulse applications including Pb-free Available switching and linear power supplies, instruments, power amplifiers
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18-Jul-08
WSL2816
R0100
WSL2010
WSL2512
WSL-2512
WSL0603
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28428
Abstract: BFC2 338 20224 MKP 338 2 X2 ENEC 28504 MKP 338 X 2 28609 28635 28239 capacitor MKP X2 MANUFACTURER 28628
Text: MKP 338 2 X2 Vishay BCcomponents Interference Suppression Film Capacitors MKP Radial Potted Type FEATURES 168x12 halfpage l w w l h 7.5 to 27.5 mm lead pitch. Supplied in box, taped on ammopack or reel h h' F' lt P Ø dt F 10 e3 RoHS compliant product (1)
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168x12
55/110/56/B
18-Jul-08
28428
BFC2 338 20224
MKP 338 2 X2 ENEC
28504
MKP 338 X 2
28609
28635
28239
capacitor MKP X2 MANUFACTURER
28628
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565 ic
Abstract: R5F21356ANFP-52P R5F21356ANFP
Text: R8C/Tiny 10-Nov-08 Evaluation of Subsystem Clock Oscillation Circuit SSP-T7 12.5pF R5F21356ANFP-52P [LQFP 10x10 0.65mm pitch] Measurement conditions : 3.0V Model CL=6.0pF Vcc=1.8V to 5.5V :SSP-T7 Frequency :Fo=32.768kHz Frequency tolerance :dF/Fo= +/-20x10-6
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10-Nov-08
R5F21356ANFP-52P
10x10)
/-20x10-6
768kHz
65kohm
1x10-6W
x10-6W)
565 ic
R5F21356ANFP-52P
R5F21356ANFP
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Untitled
Abstract: No abstract text available
Text: SiR474DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 20 0.012 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 8 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 3 G • Notebook CPU Core - High-Side Switch
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SiR474DP
SiR474DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Recommended Soldering Profiles Vishay Foil Resistors Recommended Soldering Profiles INTRODUCTION In general, all standard mounting methods and solution cleaners practiced in the industry for resistors are applicable to Bulk Metal Foil resistors as well. Normally, the user adopts the method and the process best suited for their own application, taking into account such factors as
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10-Nov-08
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2249 SMD IC
Abstract: No abstract text available
Text: R8C/Tiny 10-Nov-08 Evaluation of Subsystem Clock Oscillation Circuit SSP-T7 7.0pF R5F21356ANFP-52P [LQFP 10x10 0.65mm pitch] Measurement conditions :3.0V Model CL=6.0pF Vcc=1.8V to 5.5V :SSP-T7 Frequency :Fo=32.768kHz Frequency tolerance :dF/Fo= +/-20x10-6
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10-Nov-08
R5F21356ANFP-52P
10x10)
768kHz
/-20x10-6
1x10-6W
65kohm
2249 SMD IC
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Untitled
Abstract: No abstract text available
Text: New Product V20200G, VF20200G, VB20200G, VI20200G Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.62 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power
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V20200G,
VF20200G,
VB20200G,
VI20200G
O-220AB
ITO-220AB
J-STD-020,
O-263AB
O-220AB,
ITO-220AB
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SiR474DP
Abstract: SIR474
Text: SiR474DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 20 0.012 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 8 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 3 G • Notebook CPU Core - High-Side Switch
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SiR474DP
SiR474DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SIR474
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Untitled
Abstract: No abstract text available
Text: SiR474DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 20 0.012 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 8 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 3 G • Notebook CPU Core - High-Side Switch
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SiR474DP
SiR474DP-T1-GE3
11-Mar-11
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specification sheet of diode
Abstract: si41
Text: SPICE Device Model Si4168DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si4168DY
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
specification sheet of diode
si41
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Untitled
Abstract: No abstract text available
Text: SiR474DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 20 0.012 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 8 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 3 G • Notebook CPU Core - High-Side Switch
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SiR474DP
SiR474DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: CAT140xx Voltage Supervisor with I2C Serial CMOS EEPROM FEATURES DESCRIPTION ̈ Precision Power Supply Voltage Monitor The CAT140xx see table below are memory and supervisory solutions for microcontroller based systems. A CMOS serial EEPROM memory and a system power
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CAT140xx
100kHz)
400kHz)
CAT140xx
MD-1117
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BY255GP
Abstract: BY251GP BY252GP JESD22-B102 J-STD-002
Text: BY251GP thru BY255GP Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat • Low leakage current, IR less than 0.1 µA
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BY251GP
BY255GP
DO-201AD
MIL-S-19500
2002/95/EC
2002/96/EC
18-Jul-08
BY255GP
BY252GP
JESD22-B102
J-STD-002
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SIR474DP
Abstract: SiR474DP-T1-GE3
Text: SiR474DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 20 0.012 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 8 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 3 G • Notebook CPU Core - High-Side Switch
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SiR474DP
SiR474DP-T1-GE3
18-Jul-08
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CAT1163
Abstract: MS-001 MD 1010 manual
Text: CAT1163 Supervisory Circuits with I2C Serial CMOS EEPROM, Precision Reset Controller and Watchdog Timer 16K EEPROM memory (16K) with hardware memory write protection, a system power supervisor with brown out protection and a watchdog timer are integrated
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CAT1163
400kHz
CAT1163
16-Byte
MD-3003
MS-001
MD 1010 manual
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AEC-Q100
Abstract: CAT15002 CAT15004
Text: CAT15002, CAT15004 Voltage Supervisor with 2-Kb and 4-Kb SPI Serial CMOS EEPROM FEATURES DESCRIPTION Precision Power Supply Voltage Monitor The CAT15002/04 see table below are memory and supervisory solutions for microcontroller based systems. A CMOS serial EEPROM memory and a
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CAT15002,
CAT15004
CAT15002/04
10MHz
CAT15002/04
MD-1126
AEC-Q100
CAT15002
CAT15004
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Untitled
Abstract: No abstract text available
Text: CAT15002, CAT15004 Voltage Supervisor with 2-Kb and 4-Kb SPI Serial CMOS EEPROM FEATURES DESCRIPTION ̈ Precision Power Supply Voltage Monitor The CAT15002/04 see table below are memory and supervisory solutions for microcontroller based systems. A CMOS serial EEPROM memory and a
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CAT15002,
CAT15004
CAT15002/04
10MHz
CAT15002/04
MD-1126
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MD3003
Abstract: No abstract text available
Text: CAT1163 Supervisory Circuits with I2C Serial CMOS EEPROM, Precision Reset Controller and Watchdog Timer 16K FEATURES EEPROM memory (16K) with hardware memory write protection, a system power supervisor with brown out protection and a watchdog timer are integrated
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CAT1163
400kHz
16-Byte
MD-3003
MD3003
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Untitled
Abstract: No abstract text available
Text: 4 TH IS DRAWING IS 3 U N P U B L IS H E D . COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. FOR ALL PUBLICATION RIGHTS 2 - LOC RES ER VED . D IS T G R E V IS IO N S 86 P LTR D E S C R IP TIO N H2 REV P ER ECR 08-028310 DATE DWN APVD 10NOV08 JR TM D
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10NOV08
30OBSOLETE
AR2000
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60481
Abstract: No abstract text available
Text: 4 TH IS DRAWING IS 2 U N P U B L IS H E D . COPYRIGHT BY ^ C O RELEASED ELECTRONICS CORPORATION. FOR ALL PUBLICATION RIGHTS R E S ER V ED . R E V IS IO N S 00 G LTR D E S C R IP TIO N K2 ECR -02831 REV PE R * FDR PHDS BRONZE PARTS DATE DWN 10NOV08 JR APVD
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10NOV08
07DEC07
31MAR2000
60481
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