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    10A, 100V, P-CHANNEL POWER MOSFET Search Results

    10A, 100V, P-CHANNEL POWER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    10A, 100V, P-CHANNEL POWER MOSFET Price and Stock

    SAE Power STD-20

    N-channel 60 V, 0.032 Ohm typ., 24 A Power MOSFET in DPAK package
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com STD-20 292
    • 1 $245.08
    • 10 $126.34
    • 100 $123.81
    • 1000 $123.81
    • 10000 $123.81
    		Buy Now

    onsemi NTTFS115P10M5

    Power MOSFET, P Channel, -100V, -13 A, 120mΩ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com NTTFS115P10M5
    • 1 -
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    • 10000 $0.3447
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    onsemi NVTYS9D6P04M8LTWG

    MOSFET – Power, Single, P-Channel, MOSFET – Power, Single, P-Channel
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com NVTYS9D6P04M8LTWG
    • 1 -
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    • 1000 $1.522
    • 10000 $0.727
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    onsemi NVTYS025P04M8LTWG

    MOSFET – Power, Single, P-Channel, MOSFET - Power, Single, P-Channel
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com NVTYS025P04M8LTWG
    • 1 -
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    • 10000 $0.406
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    onsemi NVMFWS9D6P04M8LT1G

    MOSFET - Power, Single P-Channel
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com NVMFWS9D6P04M8LT1G
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    • 10000 $0.54
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    Find more 10A, 100V, P-CHANNEL POWER MOSFET price and stock on Findchips.com

    10A, 100V, P-CHANNEL POWER MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRF9530

    Abstract: IRF9531 IRF9530 mosfet
    Text: S E M I C O N D U C T O R IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V These are P-Channel enhancement mode silicon gate


    Original     		IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM -100V, IRF9530 IRF9531 IRF9530 mosfet PDF

    mosfet for power electronic

    Abstract: 2E12 FSS913A0D FSS913A0D1 FSS913A0D3 FSS913A0R FSS913A0R1 Rad Hard in Fairchild for MOSFET 12v 10A electronic transformer
    Text: FSS913A0D, FSS913A0R Data Sheet 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		FSS913A0D, FSS913A0R -100V, mosfet for power electronic 2E12 FSS913A0D FSS913A0D1 FSS913A0D3 FSS913A0R FSS913A0R1 Rad Hard in Fairchild for MOSFET 12v 10A electronic transformer PDF

    Power output ic la 4451 datasheet

    Abstract: output ic la 4451 datasheet la 4451 2E12 FSS913A0D FSS913A0D1 FSS913A0D3 FSS913A0R FSS913A0R1
    Text: FSS913A0D, FSS913A0R Data Sheet 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		FSS913A0D, FSS913A0R -100V, Power output ic la 4451 datasheet output ic la 4451 datasheet la 4451 2E12 FSS913A0D FSS913A0D1 FSS913A0D3 FSS913A0R FSS913A0R1 PDF

    2E12

    Abstract: FSS913A0D FSS913A0D1 FSS913A0D3 FSS913A0R FSS913A0R1
    Text: FSS913A0D, FSS913A0R Data Sheet 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		FSS913A0D, FSS913A0R -100V, 2E12 FSS913A0D FSS913A0D1 FSS913A0D3 FSS913A0R FSS913A0R1 PDF

    Untitled

    Abstract: No abstract text available
    Text: FSS913A0D, FSS913A0R Data Sheet 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		FSS913A0D, FSS913A0R -100V, PDF

    BB0P10

    Abstract: MTBB0P10J3
    Text: Spec. No. : C732J3 Issued Date : 2009.07.07 Revised Date : Page No. : 1/7 CYStech Electronics Corp. P-Channel Logic Level Enhancement Mode Power MOSFET MTBB0P10J3 BVDSS -100V ID -10A RDSON MAX 205mΩ Features • Low Gate Charge • Simple Drive Requirement


    Original     		C732J3 MTBB0P10J3 -100V O-252 UL94V-0 BB0P10 MTBB0P10J3 PDF

    FSS913AOD

    Abstract: No abstract text available
    Text: FSS913AOD, FSS913AOR S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs January 1998 Features Description • 10A, -100V, rDS ON = 0.280Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original     		FSS913AOD, FSS913AOR 1-800-4-HARRIS FSS913AOD PDF

    FS20KMA-4A

    Abstract: fs20kma
    Text: MITSUBISHI Nch POWER MOSFET ARY FS20KMA-4A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE FS20KMA-4A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2


    Original     		FS20KMA-4A FS20KMA-4A fs20kma PDF

    FS20UMA-4A

    Abstract: No abstract text available
    Text: MITSUBISHI Nch POWER MOSFET ARY FS20UMA-4A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE FS20UMA-4A OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 ➃ 1.0


    Original     		FS20UMA-4A FS20UMA-4A PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX20VSJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 4.5 1.5 max 10.5 max 1.3 3.0 +0.3 –0.5


    Original     		FX20VSJ-2 100ns PDF

    FX20KMJ-2

    Abstract: 8025A
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX20KMJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20KMJ-2 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2


    Original     		FX20KMJ-2 100ns FX20KMJ-2 8025A PDF

    fx20umj2

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX20UMJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20UMJ-2 OUTLINE DRAWING Dimensions in mm 4.5 10.5 max 1.3 16 7.0 3.2


    Original     		FX20UMJ-2 100ns fx20umj2 PDF

    fx20smj2

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX20SMJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20SMJ-2 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2


    Original     		FX20SMJ-2 100ns fx20smj2 PDF

    FX20ASJ-2

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX20ASJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20ASJ-2 OUTLINE DRAWING 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 Dimensions in mm


    Original     		FX20ASJ-2 100ns FX20ASJ-2 PDF

    FS10KMA-4A

    Abstract: No abstract text available
    Text: MITSUBISHI Nch POWER MOSFET ARY FS10KMA-4A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE FS10KMA-4A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2


    Original     		FS10KMA-4A FS10KMA-4A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF9130, IRF9131, IRF9132, IRF9133 -10A and -12A, -80V and -100V, 0.30 and 0.40 Ohm, P-Channel Power MOSFETs July 1998 Description Features -10A and -12A, -80V and -100V These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		IRF9130, IRF9131, IRF9132, IRF9133 -100V, -100V PDF

    f9530

    Abstract: No abstract text available
    Text: *f*53S IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V • High Input Impedance These are P-Channel enhancement mode silicon gate


    OCR Scan     		IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM -100V, -100V f9530 PDF

    irf9530

    Abstract: irf9532 JEDEC TO-263A IRF9531
    Text: H A F R F R IS S E M I C O N D U C T O R IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V These are P-Channel enhancement mode silicon gate


    OCR Scan     		IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM -100V, IRF9532 irf9530 JEDEC TO-263A IRF9531 PDF

    Untitled

    Abstract: No abstract text available
    Text: FSS913AOD, FSS913AOR Semiconductor August 1998 10A, -100V, 0.280 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features • 10A , -100V , rQg ONi = 0.280J2 T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r • Total D ose - File Number 4451.2


    OCR Scan     		FSS913AOD, FSS913AOR -100V, -100V 280J2 1-800-4-HARR PDF

    Untitled

    Abstract: No abstract text available
    Text: FSS913AOD, FSS913AOR HARRIS S E M I C O N D U C T O R 10A, -100V, 0.280 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 10A, -100V, rDS ON = 0.280Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		FSS913AOD, FSS913AOR -100V, MIL-STD-750, MIL-S-19500, 100ms; 500ms; PDF

    Untitled

    Abstract: No abstract text available
    Text: FSS913AOD, FSS913AOR f ü H A R R IS S E M I C O N D U C T O R August 1998 File Num ber 4451.2 10A, -100V, 0.280 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features • 10A, -100V, r d s ON = 0.280Q • Total Dose - M eets Pre-R AD S p e cifica tio n s to 100K RAD (Si)


    OCR Scan     		FSS913AOD, FSS913AOR -100V, 1-800-4-HARR PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS10SM-2 HIGH-SPEED SWITCHING USE FS10SM-2 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX Tf 3.2 * 5.45 ' 10V DRIVE ' V d s s . 100V ' ' ' rDS ON (


    OCR Scan     		FS10SM-2 100ns PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS10UM-2 HIGH-SPEED SWITCHING USE FS10UM-2 OUTLINE DRAWING LU U Dimensions in mm LU qwe 10V DRIVE V d s s . 100V rDS ON (


    OCR Scan     		FS10UM-2 100ns O-220 PDF

    FS10VS-2

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS1OVS-2 HIGH-SPEED SWITCHING USE FS1 OVS-2 OUTLINE DRAWING I q J w e Q w r 6 +i CO C\i q w e r 10V DRIVE V d s s . 100V rDS ON (


    OCR Scan     		100ns O-22QS 20EMPERATURE 571Q-123 FS10VS-2 PDF