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    10A 1000V TO220A Search Results

    10A 1000V TO220A Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    LT1363CS8#TRPBF Analog Devices 70MHz, 1000V/µs Op Amp Visit Analog Devices Buy
    LT1363CN8#PBF Analog Devices 70MHz, 1000V/µs Op Amp Visit Analog Devices Buy
    LT1363CS8#PBF Analog Devices 70MHz, 1000V/µs Op Amp Visit Analog Devices Buy
    LT1365CS#PBF Analog Devices 2x & 4x 70MHz, 1000V/µs Op Am Visit Analog Devices Buy

    10A 1000V TO220A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    scr 600V 10A

    Abstract: 10A SCR device scr 200a 1000v SCR 30A 400V JESD22-A101 JESD22-A102 scr 600v 12a TO-220 scr 20a E71639 teccor scr
    Text: Teccor brand Thyristors 10 Amp Sensitive & Standard SCRs Sxx10xSx & Sxx10x Series Description Excellent unidirectional switches for phase control and general switching applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with microAmps


    Original     		PDF Sxx10xSx Sxx10x EIA-481-2 O-220AB O-251AA O-252AA Sxx10L O-220 scr 600V 10A 10A SCR device scr 200a 1000v SCR 30A 400V JESD22-A101 JESD22-A102 scr 600v 12a TO-220 scr 20a E71639 teccor scr

    scr 600v 12a TO-220

    Abstract: SCR 30A 400V SCR 30A 600V SCR 400V Igt 15mA JESD22-A101 JESD22-A102 Sxx10xyy s3500a SCR 20A 600V SCR TO251
    Text: Teccor brand Thyristors 10 Amp Sensitive & Standard SCRs Sxx10xSx & Sxx10x Series Description Excellent unidirectional switches for phase control and general switching applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with microAmps


    Original     		PDF Sxx10xSx Sxx10x EIA-481-2 O-220AB O-251AA O-252AA Sxx10L O-220 scr 600v 12a TO-220 SCR 30A 400V SCR 30A 600V SCR 400V Igt 15mA JESD22-A101 JESD22-A102 Sxx10xyy s3500a SCR 20A 600V SCR TO251

    Untitled

    Abstract: No abstract text available
    Text: PD - 95639A IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 5639A IRG4BC20SPbF O-220AB O-220AB I4BC20SPbF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95639A IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 5639A IRG4BC20SPbF O-220AB O-220AB

    JESD22-A101

    Abstract: JESD22-A102 strobe SCR
    Text: Teccor brand Thyristors 10 Amp Sensitive & Standard SCRs Sxx10xSx & Sxx10x Series ® Description Excellent unidirectional switches for phase control and general switching applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with microAmps


    Original     		PDF Sxx10xSx Sxx10x O-220AB O-251AA O-252AA Sxx10L Sxx10DS3 O-220 O-251 JESD22-A101 JESD22-A102 strobe SCR

    Untitled

    Abstract: No abstract text available
    Text: PD - 95639 IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC20SPbF O-220AB O-220AB O-220AB.

    SCR 30A 600V

    Abstract: DPAC JESD22-A101 JESD22-A102 teccor scr SCR 30A 400V Sxx10DSy
    Text: Teccor brand Thyristors 10 Amp Sensitive & Standard SCRs Sxx10xSx & Sxx10x Series Description Excellent unidirectional switches for phase control and general switching applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with microAmps


    Original     		PDF Sxx10xSx Sxx10x O-220AB O-251AA O-252AA Sxx10L Sxx10DS3 O-220 SCR 30A 600V DPAC JESD22-A101 JESD22-A102 teccor scr SCR 30A 400V Sxx10DSy

    G03N1202

    Abstract: No abstract text available
    Text: IGP03N120H2 IGW03N120H2 HighSpeed 2-Technology C • • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies G 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits


    Original     		PDF IGP03N120H2 IGW03N120H2 PG-TO-247-3-1 O-247AC) PG-TO-220-3-1 O-220AB) G03N1202 PG-TO-247-3-1

    g03h1202

    Abstract: No abstract text available
    Text: IGP03N120H2 IGW03N120H2 HighSpeed 2-Technology C • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits


    Original     		PDF IGP03N120H2 IGW03N120H2 PG-TO-247-3-21 PG-TO-220-3-1 15mances. g03h1202

    g03h1202

    Abstract: No abstract text available
    Text: IGP03N120H2 IGW03N120H2 HighSpeed 2-Technology C • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits


    Original     		PDF IGP03N120H2 IGW03N120H2 PG-TO-220-3-1 PG-TO-247-3-21 G03H1202 PG-TO-247-3-21

    G03H1202

    Abstract: 1000v 1A smps
    Text: IGP03N120H2 IGW03N120H2 HighSpeed 2-Technology C • • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits


    Original     		PDF IGP03N120H2 IGW03N120H2 PG-TO-247-3-1 PG-TO-220-3-1 G03H1202 PG-TO-247-3-1 1000v 1A smps

    smps* ZVT

    Abstract: 1200v 3A 15v 60w smps Electronic ballast 40W IGB03N120H2 IGP03N120H2 IGW03N120H2 Q67040-S4596 Q67040-S4599 P-TO-247-3-1
    Text: IGP03N120H2, IGW03N120H2 IGB03N120H2 HighSpeed 2-Technology • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies C G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits


    Original     		PDF IGP03N120H2, IGW03N120H2 IGB03N120H2 P-TO-220-3-1 O-220AB) P-TO-263-3-2 O-263AB) P-TO-247-3-1 O-247AC) smps* ZVT 1200v 3A 15v 60w smps Electronic ballast 40W IGB03N120H2 IGP03N120H2 IGW03N120H2 Q67040-S4596 Q67040-S4599 P-TO-247-3-1

    15v 60w smps

    Abstract: IGB03N120H2 IGP03N120H2 IGW03N120H2 Q67040-S4596 Q67040-S4599 smps* ZVT P-TO-247-3-1
    Text: IGP03N120H2, IGW03N120H2 IGB03N120H2 HighSpeed 2-Technology • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter C G 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior


    Original     		PDF IGP03N120H2, IGW03N120H2 IGB03N120H2 P-TO-220-3-1 O-220AB) P-TO-263-3-2 O-263AB) P-TO-247-3-1 O-247AC) 15v 60w smps IGB03N120H2 IGP03N120H2 IGW03N120H2 Q67040-S4596 Q67040-S4599 smps* ZVT P-TO-247-3-1

    RG-2A Diode

    Abstract: PG-TO-247-3 K03N1202 3V10A
    Text: IKP03N120H2 IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • Designed for: - SMPS - Lamp Ballast - ZVS-Converter G 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits


    Original     		PDF IKP03N120H2 IKW03N120H2 K03N1202 PG-TO-247-3-1 O-247AC) PG-TO-220-3-1 O-220AB) RG-2A Diode PG-TO-247-3 3V10A

    K03H1202

    Abstract: 05852 k03h120 k03h12 15v 60w smps DIODE 3A 1000V IKW03N120H2 IKP03N120H2 PG-TO-220-3-1 PG-TO-247-3-21
    Text: IKP03N120H2 IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits


    Original     		PDF IKP03N120H2 IKW03N120H2 PG-TO-247-3-21 PG-TO-220-3-1 K03H1202 05852 k03h120 k03h12 15v 60w smps DIODE 3A 1000V IKW03N120H2 IKP03N120H2 PG-TO-220-3-1 PG-TO-247-3-21

    buw13a philips semiconductor

    Abstract: 180NS mje13008 BUS12 BUS12A BUT12 BUT12A BUT18 BUS13 BUT18AF
    Text: N AUER PHILIPS/DISCRETEL ESE D • bbS HÌBl 001b521 Ö ■ Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. V CE(*at) MAX. at lc/lB tftyp at lc (Inductive load) 400V 450V 1.5V at 4A/0.8A 180ns at 4A 850V 1000V 400V 450V 1.5V at 4A/0.8A 180ns at 4A


    OCR Scan     		PDF S3T31 BUT18 O-220AB 180ns BUT18A BUT18F OT-186 BUT18AF BUT12 buw13a philips semiconductor mje13008 BUS12 BUS12A BUT12A BUS13 BUT18AF

    buw13a philips semiconductor

    Abstract: BUT22A BUT228 BUP23A SOT93 BUT18 PHILIPS SEMICONDUCTOR mje13008 SOT-93 bus13 philips transistor VCE 1000V
    Text: BSE J> N AUER PHILIPS/DISCRETE • bbS3T31 001bE21 Ö ■ Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. TYPE NO. PACKAGE OUTLINE •cfDOt1) 6A v CE(*at) MAX. at lc/lB t ft y p a tlc (Inductive load) 400V 450V 1.5V at 4A/0.8A 180ns at 4A 850V 1000V


    OCR Scan     		PDF bki53T31 BUT18 BUT18A O-220AB 180ns BUT18F BUT18AF OT-186 BUT12 buw13a philips semiconductor BUT22A BUT228 BUP23A SOT93 BUT18 PHILIPS SEMICONDUCTOR mje13008 SOT-93 bus13 philips transistor VCE 1000V

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE, BSE D • QOlbEEl fl ■ T~3 I Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. V CE(*at) MAX. at lc/lB tftyp at lc (Inductive load) 400V 450V 1,5V at 4A /0.8A 180ns at 4A 850V 1000V 400V 450V 1.5V at 4 A /0.8A 180ns at 4A


    OCR Scan     		PDF 180ns OT-93 400ns BUV298AV BUV298V OT-227B1 -220AB BUT18F

    BU2506DF

    Abstract: 1500v 02xs t199 5A 800V BU508
    Text: 42 Power Devices High Speed, High Voltage Transistors in order of current rating (cont.) Package Outline V CE (sat) tf typ at lc lC(DC)<1> V CES V CEO max. at Iq/I b (Inductive Load) BUT12 BUT12A TO-220AB 8A 850V 1000V 400V 450V 1.5V at 6A/1.2A 1.5V at 5A/1 A


    OCR Scan     		PDF BUT12 BUT12A O-220AB OT-93 OT-199 OT-186A OT-227B1 OT-227B1 200ns BU2506DF 1500v 02xs t199 5A 800V BU508

    diode 1000V 10a

    Abstract: 200v 1.5v 3a diode TO-220aB 11A diode 6A 1000v DIODE 2A 400V TO-220aB rr 4045AV
    Text: Power Devices High Speed, M edium Voltage Transistors in o r d e r o f c u rr e n t rating VCE (sat) max. at le max. at Iq Package Outline •cfDO*1* v CBO v CEO BU 406 BU407 TO-220AB 7A 400V 300V 200V 100V 1V at 5A 750ns at 5A BUV28 BUV28A TO-220AB 12A


    OCR Scan     		PDF O-220AB O-220AB 750ns BU407 BUV28 BUV28A BUV27 BUV27A diode 1000V 10a 200v 1.5v 3a diode TO-220aB 11A diode 6A 1000v DIODE 2A 400V TO-220aB rr 4045AV

    BT145-500R

    Abstract: PHILIPS BT152-400R BTW38-600R 400v 50A Transistor BT148-400R SOT-186 600RU BTW38-600RU 600v BTW38
    Text: N AMER PHILIPS/DISCRETE 30 BSE D • b b S B ' m GOlbSQÖ 5 ■ T -Z S '-O l Power Devices GENERAL PURPOSE THYRISTORS in order of current rating PACKAGE OUTLINE AVERAGE ON-STATE CURRENT fT(RMS)m a x - lT (A V )m a x .< l> 2N5064 BT169B D E G TO-92 0.8A TO-92


    OCR Scan     		PDF 2N5064 200iiA BT169B 200/iA BT148-400R -500R -600R OT-82 200juA C122F BT145-500R PHILIPS BT152-400R BTW38-600R 400v 50A Transistor SOT-186 600RU BTW38-600RU 600v BTW38

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE BSE D • bbSBTBl DOlbBOfl 5 ■ X - 2 S '- O l Power Devices GENERAL PURPOSE THYRISTORS in order of current rating * REPETITIVE N O N -R EP ETtT IV E PEAK PEAK ON-STATE R EVER SE VOLTAGE C U R R EN T lTsHmax.t2) V RHiyimax. RATE O F


    OCR Scan     		PDF BT169B OT168. BRY39 50/uA BRY56

    BY359-1500

    Abstract: BYX4 9000V BYW96D
    Text: 32 Power Devices Double Diffused Rectifiers in o rd e r o f cu rre n t rating (cont.) Type No. Package Outline Average Forward Current Repetitive Peak Reverse Voltage Surge (NonRepetitive) Forward Current Reverse Recovery Time •f (AV) m ax.Cl ^RRNI max.


    OCR Scan     		PDF BYV95A BYV96D BYW96D BY329-1000 OD-57 250ns OD-64 300ns 250ns BY359-1500 BYX4 9000V

    400v 20A ultra fast recovery diode

    Abstract: 400v 50A DIODE BYV54V50 BYV72E100/150/200 power Diode 200V 10A BYV72E-100 DIODE SMD 10A sod 81 50V 200A ultra fast diode 600v 2A ultra fast recovery diode
    Text: Power Devices Ultra Fast Recovery Epitaxial Rectifiers in o rd e r o f cu rre n t rating (cont.) Package Outline Average Forward Current Repetitive Peak Reverse Voltage NonRepetitive Reverse Avalanche Energy Surge (NonRepetitive) Forward Current ’ f |A V | m ax.(1)


    OCR Scan     		PDF BYV72E-100 BYV44-300* BYV74-300* BYT230PIV-200< BYV54V-50* OT-93 O-220AB BYD31D BYD43-20 BYV98 400v 20A ultra fast recovery diode 400v 50A DIODE BYV54V50 BYV72E100/150/200 power Diode 200V 10A DIODE SMD 10A sod 81 50V 200A ultra fast diode 600v 2A ultra fast recovery diode