10A 100V DARLINGTON POWER TRANSISTOR Search Results

10A 100V DARLINGTON POWER TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

10A 100V DARLINGTON POWER TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SB1079 Abstract: 2SD1559 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -10A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min) ·Complement to Type 2SD1559 APPLICATIONS	Original	-100V 2SD1559 -50mA -20mA -200mA -100V, 2SB1079 2SD1559	PDF
2SB1100 Abstract: darlington transistor for audio power application darlington power transistor 10a 10A 100V darlington power transistor 2SD1591 transistor 10a 100v Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·High DC Current Gain: hFE= 1000(Min)@ IC= -10A ·Complement to Type 2SD1591 APPLICATIONS	Original	-100V 2SD1591 -25mA -100V -25mA, 2SB1100 darlington transistor for audio power application darlington power transistor 10a 10A 100V darlington power transistor 2SD1591 transistor 10a 100v	PDF
NTE251 Abstract: Darlington 40A Text: NTE251 NPN & NTE252 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications.	Original	NTE251 NTE252 NTE251) NTE252) NTE251 Darlington 40A	PDF
DARLINGTON 3A 100V npn Abstract: hfe 2500 NTE264 Text: NTE263 NPN & NTE264 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications.	Original	NTE263 NTE264 NTE263) NTE264) DARLINGTON 3A 100V npn hfe 2500 NTE264	PDF
BDX67 Abstract: npn 120v 10a transistor transistor bdx67 BDX66 NPN Transistor VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON BDX67C BDX67B darlington power transistor 10a transistor bdx66 Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 1000 Min @ IC= 10A ·Low Saturation Voltage ·Complement to Type BDX66/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier	Original	BDX66/A/B/C BDX67 BDX67C BDX67A BDX67B BDX67 npn 120v 10a transistor transistor bdx67 BDX66 NPN Transistor VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON BDX67C BDX67B darlington power transistor 10a transistor bdx66	PDF
MJ4035 Abstract: Darlington Transistors marking code TO3 "Darlington Transistors" MJ4032 transistors pnp 100v 10A Text: Central MJ4032 PNP MJ4035 NPN COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR MJ4032, MJ4035 types are Complementary Silicon Power Darlington Transistors designed for general purpose and amplifier	Original	MJ4032 MJ4035 MJ4032, 100mA Darlington Transistors marking code TO3 "Darlington Transistors" transistors pnp 100v 10A	PDF
NTE249 Abstract: SILICON COMPLEMENTARY transistors darlington darlington complementary power amplifier Text: NTE249 NPN & NTE250 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in complementary general purpose amplifier applications.	Original	NTE249 NTE250 NTE249 SILICON COMPLEMENTARY transistors darlington darlington complementary power amplifier	PDF
IB 100MA NPN Abstract: HBDW93C HBDW94C VCE 100V transistor power darlington transistor 10A Text: PNP DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBDW94C █ APPLICATIONS Power Linear And Switching Applicatione. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -65~150℃	Original	HBDW94C O-220 -100V -100V, -20mA -100mA IB 100MA NPN HBDW93C HBDW94C VCE 100V transistor power darlington transistor 10A	PDF
npn transistor 100v min Abstract: NPN Transistor 10A 100V HBDW93C IB 100MA NPN npn DARLINGTON 15A transistor npn ic10A DARLINGTON 3A 100V npn Text: NPN DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBDW93C █ APPLICATIONS Power Linear And Switching Applicatione. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -65~150℃	Original	HBDW93C O-220 100mA, 100mA npn transistor 100v min NPN Transistor 10A 100V HBDW93C IB 100MA NPN npn DARLINGTON 15A transistor npn ic10A DARLINGTON 3A 100V npn	PDF
NTE270 Abstract: No abstract text available Text: NTE270 NPN & NTE271 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.	Original	NTE270 NTE271 NTE270	PDF
Untitled Abstract: No abstract text available Text: SILICON DARLINGTON NPN TRANSISTOR MJ4035 • Monolithic Darlington Configuration With Integrated Anti-Parallel Collector-Emitter Diode • Hermetic TO3 Metal Package. • Ideally Suited For General Purpose Switching And Amplifier Applications • Screening Options Available	Original	MJ4035 300us, O-204AA)	PDF
150w darlington transistor to3 package Abstract: LE17 MJ4035 TRANSISTOR C 1177 Text: SILICON DARLINGTON NPN TRANSISTOR MJ4035 • Monolithic Darlington Configuration With Integrated Anti-Parallel Collector-Emitter Diode • Hermetic TO3 Metal Package. • Ideally Suited For General Purpose Switching And Amplifier Applications • Screening Options Available	Original	MJ4035 300us, O-204AA) 150w darlington transistor to3 package LE17 MJ4035 TRANSISTOR C 1177	PDF
MJ11019 Abstract: MJ11020 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 400 Min @ IC= -10A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -200V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -2.0V(Max)@ IC= -10A	Original	-200V MJ11020 -100V, -100V; MJ11019 MJ11020	PDF
TRANSISTOR BDX Abstract: pnp 150w darlington transistor to3 package BDX66 BDX66C transistor bdx66 BDX66B TRANSISTOR 150w darlington transistor to3 package BDX66C Transistor BDX66A BDX66B Text: PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C • Hermetic Metal TO3 Package. • Ideal for General Purpose Low Frequency Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCEO VCBO	Original	BDX66 -100V -120V O-204AA) TRANSISTOR BDX pnp 150w darlington transistor to3 package BDX66 BDX66C transistor bdx66 BDX66B TRANSISTOR 150w darlington transistor to3 package BDX66C Transistor BDX66A BDX66B	PDF

BDW42 Abstract: BDW47 147 B transistor npn DARLINGTON 10A Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 100V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 5A ·Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max.)@ IC= 5.0A	Original	BDW47 BDW42 BDW47 147 B transistor npn DARLINGTON 10A	PDF
npn DARLINGTON 10A Abstract: TIP147T NPN Darlington Transistor TIP142T darlington power transistor 10a Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min) ·Complement to Type TIP147T APPLICATIONS	Original	TIP147T Cycle20% npn DARLINGTON 10A TIP147T NPN Darlington Transistor TIP142T darlington power transistor 10a	PDF
TIP145 Abstract: Tip147 PNP Darlington 100V 10A TIP147 TIP146 tip147 data sheet Text: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP145/146/147 DESCRIPTION •With TO-3PN package ·DARLINGTON ·High DC current gain ·Complement to type TIP140/141/142 APPLICATIONS ·Designed for general–purpose amplifier and	Original	TIP145/146/147 TIP140/141/142 TIP145 TIP146 TIP147 CycleE20% TIP145 Tip147 PNP Darlington 100V 10A TIP147 TIP146 tip147 data sheet	PDF
tip140 Abstract: darlington TIP142 power amplifier TIP141 TIP142 npn DARLINGTON 10A TIP-142 tip142 darlington NPN POWER DARLINGTON TRANSISTORS Text: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors TIP140/141/142 DESCRIPTION •With TO-3PN package ·DARLINGTON ·High DC current gain ·Complement to type TIP145/146/147 APPLICATIONS ·Designed for general–purpose amplifier and	Original	TIP140/141/142 TIP145/146/147 TIP140 TIP141 TIP142 CycleE20% tip140 darlington TIP142 power amplifier TIP141 TIP142 npn DARLINGTON 10A TIP-142 tip142 darlington NPN POWER DARLINGTON TRANSISTORS	PDF
Untitled Abstract: No abstract text available Text: roaucti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Darlington Power Transistor TIP147T DESCRIPTION • High DC Current Gain: h FE = 1000(Min)@ IC=-5A • Collector-Emitter Sustaining Voltage-	Original	TIP147T -100V TIP142T O-220C -40mA -100V,	PDF
tip142/TIP147 AMPLIFIER CIRCUIT Abstract: TIP142 TIP140 TIP147 tip142 tip147 darlington TIP142 power amplifier tip147 transistor tip142,tip147 amplifier circuits TIP145 TIP141 Text: TIP140 to TIP142 & TIP145 to TIP147 Darlington Transistors Features: Designed for general-purpose amplifier and low speed switching applications. • Collector-Emitter sustaining voltage VCEO sus = 60V (Minimum) - TIP140, TIP145 = 80V (Minimum) - TIP141, TIP146	Original	TIP140 TIP142 TIP145 TIP147 TIP140, TIP145 TIP141, TIP146 TIP142, tip142/TIP147 AMPLIFIER CIRCUIT TIP142 TIP147 tip142 tip147 darlington TIP142 power amplifier tip147 transistor tip142,tip147 amplifier circuits TIP141	PDF
Untitled Abstract: No abstract text available Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 TIP142T Silicon NPN Darlington Power Transistor DESCRIPTION • High DC Current Gain- ., /"S, r -^ J • : h FE =1000(Min)@l c -5A A x • Collector-Emitter Sustaining Voltage-	Original	TIP142T TIP147T O-220C CycleiS20%	PDF
Untitled Abstract: No abstract text available Text: ^£ii.£u <z3s.ml-C.ondu.ckoi L/-^ioaucti, Line. TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 TIP142 Silicon NPN Darlington Power Transistor f DESCRIPTION • High DC Current Gain: h FE =1000(Min)@l c =5A	Original	TIP142	PDF
IRF9210 Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1 Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF	OCR Scan	2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1	PDF
SE9401 Abstract: VCe-30V 435-1B24 Text: SE^OO SESkO] SESkOl ♦I Central Semiconductor Central Semiconductor Silicon PNP Transistor Darlington Power 1 4 8 -B Lamar S treet W est Babylon, N ew York 1 1 7 0 4 JEDEC T0-220 Case DESCRIPTION The CENTRAL SEMICONDUCTOR SE9*»00. 01, 02 are Silicon PNP Epitaxial Base, Monolithic	OCR Scan	SE9401 148-B T0-220 100mA 150mA To-220 117BB 435-1B24 VCe-30V	PDF

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10A 100V DARLINGTON POWER TRANSISTOR Search Results

10A 100V DARLINGTON POWER TRANSISTOR Result Highlights (5)

10A 100V DARLINGTON POWER TRANSISTOR Datasheets Context Search

2SB1079

2SB1100

NTE251

DARLINGTON 3A 100V npn

BDX67

MJ4035

NTE249

IB 100MA NPN

npn transistor 100v min

NTE270

Untitled

150w darlington transistor to3 package

MJ11019

TRANSISTOR BDX

BDW42

npn DARLINGTON 10A

TIP145

tip140

Untitled

tip142/TIP147 AMPLIFIER CIRCUIT

Untitled

Untitled

IRF9210

SE9401