Untitled
Abstract: No abstract text available
Text: FDB12N50U N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 10 A, 800 m Features Description • RDS on = 650 m (Typ.) @ VGS = 10 V, ID = 5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDB12N50U
50nsec
200nsec
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10a 400V ultra fast diode d2pak
Abstract: IRGS4064DPBF IRGS4064 ultrafast diode 10a 400v igbt 600V
Text: PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 10A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C
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IRGS4064DPbF
EIA-418.
10a 400V ultra fast diode d2pak
IRGS4064DPBF
IRGS4064
ultrafast diode 10a 400v
igbt 600V
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 10A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C
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IRGS4064DPbF
EIA-418.
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FDB12N50U
Abstract: No abstract text available
Text: TM Ultra FRFET FDB12N50U tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
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FDB12N50U
FDB12N50U
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10a 400V ultra fast diode d2pak
Abstract: schottky diode 60V 80A diode schottky 600 volt smb diode trr 100ns sod-123 diode schottky 1000V 10a CMSH3-40 sod-123 trr 75ns cbrhdsh1-40l CMR3U-06 SOT923
Text: Rectifiers • General Purpose Rectifiers • Fast Recovery Rectifiers • Ultra Fast Recovery Rectifiers • Super Fast Recovery Rectifiers • Schottky Rectifiers • Bridge Rectifiers General Purpose Rectifiers 1.0 to 3.0 Amperes 200 to 1000 Volts IO AMPS
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OD-123F
OT-89
OT-223
CMMR1-02
CMR1-02M
CMR1-02
CMR2-02
CMR3-02
CMMR1-04
CXR1-04
10a 400V ultra fast diode d2pak
schottky diode 60V 80A
diode schottky 600 volt smb
diode trr 100ns sod-123
diode schottky 1000V 10a
CMSH3-40
sod-123 trr 75ns
cbrhdsh1-40l
CMR3U-06
SOT923
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Untitled
Abstract: No abstract text available
Text: FGB20N60SFD 600V, 20A Field Stop IGBT Features General Description • High Current Capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Welder, UPS, SMPS and PFC applications where low conduction and
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FGB20N60SFD
O-263AB/D2-PAK
100oC
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FGB20N60SFD
Abstract: IGBT welder circuit inverter welder circuit Circuit of welder IGBT inverter
Text: FGB20N60SFD 600 V, 20 A Field Stop IGBT Features General Description • High Current Capability Using novel field stop IGBT technology, Fairchild ’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
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FGB20N60SFD
FGB20N60SFD
O-263AB/D2-PAK
IGBT welder circuit
inverter welder circuit
Circuit of welder IGBT inverter
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igbt 400V 20A
Abstract: IGBT welder circuit 400v 20A ultra fast recovery diode FGB20N60SF 20A igbt 12v igbt 20a FGB20N60SFD 10a 400V ultra fast diode d2pak
Text: FGB20N60SFD 600V, 20A Field Stop IGBT Features General Description • High Current Capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Welder, UPS, SMPS and PFC applications where low conduction and
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FGB20N60SFD
O-263AB/D2-PAK
100oC
igbt 400V 20A
IGBT welder circuit
400v 20A ultra fast recovery diode
FGB20N60SF
20A igbt
12v igbt 20a
FGB20N60SFD
10a 400V ultra fast diode d2pak
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Untitled
Abstract: No abstract text available
Text: UniFETTM FDB12N50U tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
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FDB12N50U
FDB12N50U
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PDF
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Untitled
Abstract: No abstract text available
Text: FQB10N50CF N-Channel QFET FRFET® MOSFET 500 V, 10 A, 610 m Features Description • 10 A, 500 V, RDS on = 610 mΩ (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe
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FQB10N50CF
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bridge rectifier 24V AC to 24v dc
Abstract: 1N5408 smd diodes GSIB1560
Text: Switch Mode Power Supply Table of Contents ADAPTOR, Buck Capacitance. 3 ADAPTOR, EMI Filtering. 4
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250ns;
DO-204AL
DO-41)
DO-220AA
V-540V;
V-440V
bridge rectifier 24V AC to 24v dc
1N5408 smd diodes
GSIB1560
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Untitled
Abstract: No abstract text available
Text: FGB5N60UNDF 600 V, 5 A Short Circuit Rated IGBT General Description Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverterdriven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC,
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FGB5N60UNDF
O-263AB/D2-PAK
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ULTRA FAST diode 400v 5a
Abstract: No abstract text available
Text: FGB5N60UNDF 600 V, 5 A Short Circuit Rated IGBT General Description Using advanced NPT IGBT technology, Fairchild ’s the NPT IGBTs offer the optimum performance for low-power inverterdriven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC,
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FGB5N60UNDF
FGB5N60UNDF
O-263AB/D2-PAK
ULTRA FAST diode 400v 5a
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ULTRA FAST diode 400v 5a
Abstract: inverterdriven igbt 100V 5A IGBT Driver 10a 400V ultra fast diode d2pak
Text: FGB5N60UNDF tm 600V, 5A Short Circuit Rated IGBT Applications • Home appliance inverter-driven appplication - Fan Motor Driver, Circulation Pump, Refrigerator, Dish Washer Features • Short circuit rated 10us • High current capability General Description
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FGB5N60UNDF
O-263AB/D2-PAK
FGB5N60UNDF
ULTRA FAST diode 400v 5a
inverterdriven
igbt 100V 5A
IGBT Driver
10a 400V ultra fast diode d2pak
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Untitled
Abstract: No abstract text available
Text: FGB20N60SFD_F085 600V, 20A Field Stop IGBT Features General Description • High current capability Using novel field-stop IGBT technology, Fairchild’s new series of field-stop IGBTs offers the optimum performance for automotive chargers, inverters, and other applications where
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FGB20N60SFD
AEC-Q101
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PDF
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Untitled
Abstract: No abstract text available
Text: FGB20N60SFD_F085 600V, 20A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverters and other applications where
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FGB20N60SFD
AEC-Q101
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sF10A400
Abstract: No abstract text available
Text: SF10A400HDS Ultra Fast Recovery Diode Applications PIN Connection • High speed swit ching and rect ificat ion • Sw it ching m ode power supply Features 4 • Ult ra- fast reverse recovery t im e: t rr = 30ns Max. • Low forward volt age & low reverse current
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SF10A400HDS
KSD-D6S001-001
sF10A400
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mosfet 10a 600v
Abstract: FCB20N60F FCB20N60FTM ED60a
Text: SuperFET FCB20N60F TM 600V N-CHANNEL FRFET Features Description • 650V @ TJ = 150°C SuperFETTM is,Fairchild' s proprietary,new generation ofhigh voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and
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FCB20N60F
FCB20N60F
mosfet 10a 600v
FCB20N60FTM
ED60a
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IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
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100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
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sf10a400hds
Abstract: SF10A400HD SF10A400H 10a 400V ultra fast diode d2pak ultra fast recovery diode sF10A400 D2Pak Package Land
Text: SF10A400HDS Ultra Fast Recovery Diode Applications PIN Connection • High speed switching and rectification • Switching mode power supply Features 4 • Ultra-fast reverse recovery time: trr=30ns Max. • Low forward voltage & low reverse current • Low switching loss
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SF10A400HDS
KSD-D6S001-001
sf10a400hds
SF10A400HD
SF10A400H
10a 400V ultra fast diode d2pak
ultra fast recovery diode
sF10A400
D2Pak Package Land
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10a 400V ultra fast diode d2pak
Abstract: No abstract text available
Text: SF10S400D2 Semiconductor Ultra Fast Recovery Diode Applications PIN Connection • High speed switching and rectification • Switching mode power supply 4 Features • Ultra-fast reverse recovery time: trr=30ns Max. • Low forward voltage & low reverse current
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SF10S400D2
SF10S400D2
KSD-D6S003-000
10a 400V ultra fast diode d2pak
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Untitled
Abstract: No abstract text available
Text: FGB20N60SFD 600 V, 20 A Field Stop IGBT Features Applications • High Current Capability • Solar Inverter, UPS, Welder, PFC • Low Saturation Voltage: VCE sat = 2.2 V @ IC = 20 A General Description • High Input Impedance • Fast Switching : EOFF = 8 uJ/A
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FGB20N60SFD
O-263AB/D2-PAK
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PDF
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Untitled
Abstract: No abstract text available
Text: SuperFETTM FCB20N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and
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FCB20N60
FCB20N60
165pF)
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FCB20N60
Abstract: counterfeit FCB20N60 mosfet 20a 300v mosfet 600V 20A Mosfet 600V, 20A
Text: SuperFET FCB20N60 TM 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and
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FCB20N60
165pF)
FCB20N60
counterfeit FCB20N60
mosfet 20a 300v
mosfet 600V 20A
Mosfet 600V, 20A
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