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    Diodes Incorporated ZXMC10A816N8TC

    Trans MOSFET N/P-CH 100V 2.1A/2.2A 8-Pin SO T/R - Tape and Reel (Alt: ZXMC10A816N8TC)
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    Avnet Americas ZXMC10A816N8TC Reel 2,500
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    Mouser Electronics ZXMC10A816N8TC 10,585
    • 1 $1.48
    • 10 $0.931
    • 100 $0.575
    • 1000 $0.438
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    Newark ZXMC10A816N8TC Cut Tape 1,425 1
    • 1 $1.67
    • 10 $1.17
    • 100 $0.802
    • 1000 $0.66
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    TME ZXMC10A816N8TC 1
    • 1 $0.874
    • 10 $0.728
    • 100 $0.548
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    • 10000 $0.354
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    ComSIT USA ZXMC10A816N8TC 7,100
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    Avnet Asia ZXMC10A816N8TC 8 Weeks 2,500
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    • 10000 $0.29615
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    Avnet Silica ZXMC10A816N8TC 20,000 10 Weeks 2,500
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    Vyrian ZXMC10A816N8TC 11,259
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    Diodes Incorporated ZXMC10A816N8TA

    Transistor MOSFET Array N-CH/P-CH 100V 2.3A 8-Pin SOIC T/R - Tape and Reel (Alt: ZXMC10A816N8TA)
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    Avnet Americas ZXMC10A816N8TA Reel 500
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    • 1000 $0.30713
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    TME ZXMC10A816N8TA 1
    • 1 $0.718
    • 10 $0.464
    • 100 $0.368
    • 1000 $0.331
    • 10000 $0.331
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    Avnet Silica ZXMC10A816N8TA 18 Weeks 500
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    ams OSRAM Group Q65110A8168

    Infrared Emitters Power TOPLED PowerTOPLEDwith lens
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    TTI Q65110A8168 Reel 4,000
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    10A816 Datasheets Context Search

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    PDF

    Untitled

    Abstract: No abstract text available
    Text: 10A816N8 100V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device Features RDS ON (Ω)max ID (A)max TA = +25°C • 100V Complementary in SOIC package  Low On-Resistance 0.230 @ VGS= 10V 2.1 0.300 @ VGS= 4.5V 1.9   Fast Switching Speed


    Original     		ZXMC10A816N8 AEC-Q101 -100V DS33497 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated 10A816N8 100V SO8 Complementary Dual enhancement mode MOSFET Summary Device V BR DSS (V) Q1 Q2 QG (nC) 100 Ω) RDS(on) (Ω ID (A) TA= 25°°C 0.230 @ VGS= 10V 2.1 0.300 @ VGS= 4.5V 1.9 0.235 @ VGS= -10V -2.2 0.320 @ VGS= -4.5V


    Original     		ZXMC10A816N8 PDF

    10A816

    Abstract: zxmc10a816n8 ZXMC10A816N8TC
    Text: A Product Line of Diodes Incorporated 10A816N8 100V SO8 Complementary Dual enhancement mode MOSFET Summary Device V BR DSS (V) Q1 Q2 QG (nC) 100 RDS(on) (Ω) ID (A) TA= 25°C 0.230 @ VGS= 10V 2.1 0.300 @ VGS= 4.5V 1.9 0.235 @ VGS= -10V -2.2 0.320 @ VGS= -4.5V


    Original     		ZXMC10A816N8 ZXMC10A816N8TC 10A816 10A816 PDF

    10A816

    Abstract: ZXMC10A816N8 4.5V to 100V input regulator
    Text: A Product Line of Diodes Incorporated 10A816N8 100V SO8 Complementary Dual enhancement mode MOSFET Summary Device V BR DSS (V) Q1 Q2 QG (nC) 100 RDS(on) (Ω Ω) ID (A) TA= 25°°C 0.230 @ VGS= 10V 2.1 0.300 @ VGS= 4.5V 1.9 0.235 @ VGS= -10V -2.2 0.320 @ VGS= -4.5V


    Original     		ZXMC10A816N8 10A816 ZXMC10A816N8 4.5V to 100V input regulator PDF