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    10C SOT23 Search Results

    10C SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    DIYAMP-SOT23-EVM Texas Instruments Universal Do-It-Yourself (DIY) Amplifier Circuit Evaluation Module Visit Texas Instruments Buy
    REF1112AIDBZRG4 Texas Instruments 1uA, SOT23-3 10ppm/C Shunt Voltage Reference 3-SOT-23 -40 to 85 Visit Texas Instruments Buy
    LM4132AQ1MFR3.0 Texas Instruments Automotive SOT23 Precision Low Dropout Voltage Reference 5-SOT-23 -40 to 125 Visit Texas Instruments Buy
    LM4132CQ1MFT3.0 Texas Instruments Automotive SOT23 Precision Low Dropout Voltage Reference 5-SOT-23 -40 to 125 Visit Texas Instruments Buy

    10C SOT23 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    48h diode zener

    Abstract: diode zener 48H daily production report sheet
    Text: ： REV E ： Doc. #： DATE 2009.05.14 ： QM Item OP OI II SPEC TECN The procedure of Hi-Rel V–QA1007 1. Purpose : For improve the quality and reliability of products and find the potential defect then take action. 2. Range: Rectron produce the product of diode rectifier and bridge rectifier


    Original     		QA1007 -202F 24HRS ISO/TS16949 -QA10L9 -QA10J9) -QA10K1) 48h diode zener diode zener 48H daily production report sheet PDF

    ZR1004

    Abstract: LT1004
    Text: PRECISION 1.235VOLT MICROPOWER VOLTAGE REFERENCE ZR1004 DRAFT ISSUE A - MARCH 1998 DEVICE DESCRIPTION FEATURES The ZR1004 is a bandgap reference circuit design to operate from very low currents, typically 5µA. The device is available in a SOT23 surface mount package, offering the


    Original     		235VOLT ZR1004 ZR1004 LT1004 LM185/385 ZR1004F01 ZR1004F03 ZR1004N801 PDF

    ZF SOT23

    Abstract: No abstract text available
    Text: PRECISION 1.235VOLT MICROPOWER VOLTAGE REFERENCE DRAFT ISSUE A - MARCH 1998 DEVICE DESCRIPTION FEATURES The ZR1004 is a bandgap reference circuit design to operate from very io w currents, typ ica lly 5 iA. The device is available in a SOT23 surface m ount package, offering the


    OCR Scan     		235VOLT ZR1004 LT1004 ZR1004F01 ZR1004N801 ZR1004R01 ZR1004Y01 ZR1004F02 ZR1004N802 ZF SOT23 PDF

    AD8033

    Abstract: AD8034 SC70-5 SC70-5 G.2
    Text: PRELIMINARY TECHNICAL DATA a Very Low-Cost High-Speed FAST FET TM Op Amps Preliminary Technical Data AD8033/AD8034 CONNECTION DIAGRAMS TOP VIEW FEATURES FET Input Amplifier Single and Dual Low Cost High Speed 80MHz, –3 dB Bandwidth (G = +1) 80V/ µ s Slew Rate (G= -1)


    Original     		AD8033/AD8034 80MHz, OT23-8; SC70-5 OT23-8 AD8033 AD8034 SC70-5 SC70-5 G.2 PDF

    ZXRE1004EF

    Abstract: ZXRE1004 MV SOT23 SO8 Wide Package ZXRE1004DF ZXRE1004DN8 ZXRE1004EN8 ZXRE1004FF LT1004 REF1004
    Text: ZXRE1004 SOT23 MICROPOWER 4A 1.22V VOLTAGE REFERENCE maintained over the 8A to 20mA operating current range with a typical temperature coefficient of only 20ppm/°C. The device has been designed to be highly tolerant of capacitive loads so maintaining excellent


    Original     		ZXRE1004 20ppm/ ZXRE1004 REF1004, LT1004 D-81673 ZXRE1004EF MV SOT23 SO8 Wide Package ZXRE1004DF ZXRE1004DN8 ZXRE1004EN8 ZXRE1004FF REF1004 PDF

    ZXRE1004FF

    Abstract: ZXRE1004 LT1004 REF1004 ZXRE1004CF ZXRE1004DF ZXRE1004DR ZXRE1004EF ZXRE1004ER
    Text: ZXRE1004 SOT23 MICROPOWER 4µA 1.22V VOLTAGE REFERENCE maintained over the 8µA to 20mA operating current range with a typical temperature coefficient of only 20ppm/°C. The device has been designed to be highly tolerant of capacitive loads so maintaining excellent


    Original     		ZXRE1004 20ppm/ ZXRE1004 REF1004, LT1004 LM185/385 seri631) ZXRE1004FF REF1004 ZXRE1004CF ZXRE1004DF ZXRE1004DR ZXRE1004EF ZXRE1004ER PDF

    REF1004

    Abstract: LT1004 ZXLT1004 ZXLT1004CF ZXLT1004DF ZXLT1004DR ZXLT1004EF ZXLT1004ER ZXLT1004FF
    Text: ZXLT1004 SOT23 MICROPOWER 4µA 1.22V VOLTAGE REFERENCE DESCRIPTION maintained over the 8µA to 20mA operating current range with a typical temperature coefficient of only 20ppm/°C. The device has been designed to be highly tolerant of capacitive loads so maintaining excellent


    Original     		ZXLT1004 20ppm/ ZXLT1004 OT2631) REF1004 LT1004 ZXLT1004CF ZXLT1004DF ZXLT1004DR ZXLT1004EF ZXLT1004ER ZXLT1004FF PDF

    C124489

    Abstract: 1316 817 bn
    Text: 11111 PL611-01 1 Programmable Quick Turn Clock T M FEATURES • • XIN,FIN 1 GND 2 CLK0 3 CLK1 4 8 XOUT 7 CLK2,OE,PDB,FSEL 6 NC 5 VDD SOP-8 MSOP-8 CLK1 1 GND 2 XIN,FIN 3 PL611-01 • • • D&67+9D1,AC*A6-6.91 //1D9*711  1


    Original     		PL611-01 09A11 9A167D1 16A97 C124489 1CA1A969A97 7D6-97 B969A97 1316 817 bn PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXRE1004 SOT23 MICROPOWER 4µA 1.22V VOLTAGE REFERENCE Description Pin Assignments The ZXRE1004 is a 1.22 volt bandgap reference circuit designed for ultra low current operation, typically 4 A. The device is available in a SOT23 surface mount package


    Original     		ZXRE1004 ZXRE1004 20ppm/Â DS32172 PDF

    IR 10D 8A

    Abstract: ZXRE1004DFTA ZXRE1004EFTA LT1004 REF1004 ZXRE1004 all diodes ratings mark a1 sot23 maximum current rating of diodes sot23 markings
    Text: A Product Line of Diodes Incorporated ZXRE1004 SOT23 MICROPOWER 4µA 1.22V VOLTAGE REFERENCE Description Pin Assignments The ZXRE1004 is a 1.22 volt bandgap reference circuit designed for ultra low current operation, typically 4 A. The device is available in a SOT23 surface mount package


    Original     		ZXRE1004 ZXRE1004 20ppm/ DS32172 IR 10D 8A ZXRE1004DFTA ZXRE1004EFTA LT1004 REF1004 all diodes ratings mark a1 sot23 maximum current rating of diodes sot23 markings PDF

    ZXRE1004

    Abstract: No abstract text available
    Text: ZXRE1004 SOT23 MICROPOWER 4jiA 1.22V VOLTAGE REFERENCE ISSUE 1 - DECEMBER 1998 DESCRIPTION The ZXRE1004 is a 1.22 v o lt bandgap reference circuit designed fo r ultra low current operation, typically 4|aA . The device is available in a SOT23 surface m ou n t package


    OCR Scan     		ZXRE1004 ZXRE1004 REF1004, LT1004 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC MMBT5401 M2E D • 7^4142 0 0 C H Û 4 7 S ■ SMGK PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage ■


    OCR Scan     		MMBT5401 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: Central CMPF4391 CMPF4392 CMPF4393 Sem icon du ctor Corp. N-CHANNEL JFET DESCRIPTION: T he CENTRAL S E M IC O N D U C T O R CMPF4391 series types are N-Channel Silicon Field Effect Transistors manufactured by the epitaxial planar process, epoxy molded in a


    OCR Scan     		CMPF4391 CMPF4392 CMPF4393 OT-23 CMPF4393 PDF

    3904

    Abstract: tr 3904 TR 3906 PNP SM Transistor 3904 transistor marking s1a 3904 SOT23 BT3904 sot23 3904 4007S S1A SOT23
    Text: SIEM EN S NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 100 mA • Low collector-em itter saturation voltage SMBT 3904 • Com plem entary type: SM BT 3906 PNP Type Marking Ordering Code (tape and reel) PinCContigui ation 1 3 2 Package1*


    OCR Scan     		68000-A4416 OT-23 EHP0Q935 EHP00757 3904 tr 3904 TR 3906 PNP SM Transistor 3904 transistor marking s1a 3904 SOT23 BT3904 sot23 3904 4007S S1A SOT23 PDF

    smd k72 y5

    Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
    Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR


    Original     		1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 smd k72 y5 K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Transistors SMBT 6428 SMBT 6429 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBT 6428 SMBT 6429


    OCR Scan     		Q68000-A8321 Q68000-A8322 OT-23 PDF

    dual diode anode-cathode

    Abstract: MMBD2835LT1 MMBD2836LT1 MMBD2837LT1 MMBD2838LT1 MARKING C25 SOT23
    Text: MMBD2836LT1 MONOL LTHIC DUAL SWITCHING DIODE SOT-23 3 3 1 ANODE-CATHODE 1 2 ANODE CATHODE 2 Absolute Maximum Ratings Characteristic o Ta=25 C Symbol Rating Unit Reverse Voltage V(BR) 75 Vdc Forward Current IF 100 nAdc 225 PF mW/ C Total Device Dissipation FR-5


    Original     		MMBD2836LT1 OT-23 100uAdc) 50Vdc) dual diode anode-cathode MMBD2835LT1 MMBD2836LT1 MMBD2837LT1 MMBD2838LT1 MARKING C25 SOT23 PDF

    AF SOT 23

    Abstract: MARKING C25 SOT23 datasheet CI 556 MMBD2837LT1 MMBD2838LT1 BE5C
    Text: MMBD2838LT1 MONOL LTHIC DUAL SWITCHING DIODE SOT-23 3 3 1 ANODE-CATHODE 1 2 ANODE CATHODE 2 Absolute Maximum Ratings Characteristic o Ta=25 C Symbol Rating Unit Reverse Voltage VR 50 Vdc Peak Reverse Voltage VRM 75 Vdc Peak Forward Current IFM 300 mAdc IO


    Original     		MMBD2838LT1 OT-23 100uAdc) 50Vdc) AF SOT 23 MARKING C25 SOT23 datasheet CI 556 MMBD2837LT1 MMBD2838LT1 BE5C PDF

    GF3443

    Abstract: No abstract text available
    Text: GF3443 P-Channel Logic Level Enhancement-Mode MOSFET « V D S -2 0 V R d S ON 65m Q Id - 4 . 4 A SOT-23, S0T-23-6L v G eneral S e m ic o n ] Mechanical Data_ Features_ Case: SOT-23-6L package Terminals: Leads solderable per MIL-STD-750,


    OCR Scan     		GF3443 OT-23-6L MIL-STD-750, OT-23, S0T-23-6L GF3443 PDF

    MMST5088

    Abstract: T7208 2n2925 mpsa18 "Die No." t1130 transistor SST 250
    Text: DIE No. NPN Small Signal TRANSISTOR DIE No. •MAXIMUM RATINGS TA=25°C Free Air Symbol Value Unit VcEO 40 V Collector-Base Voltage VcBO 70 V Emitter-Base Voltage V ebo 6 V Collector Current Continuous Ic Parameter C -2 2 Collector-Emitter Voltage ■ DESCRIPTION


    OCR Scan     		2N3860 2N5232A MPSA20 360mW 375mW MMST5088 T7208 2n2925 mpsa18 "Die No." t1130 transistor SST 250 PDF

    1000w audio amplifier circuit diagram class D

    Abstract: 12v 1000W AUDIO AMPLIFIER CIRCUIT DIAGRAM 1000w rms audio amplifier circuit diagram layout 12v 1000W AUDIO AMPLIFIER SCHEMATIC 100W smps amplifier circuit diagram class D 1000w 1000w smps audio amplifier circuit diagram 1000w transistor audio amplifier circuit diagram SCHEMATIC 12v 1000w smps 1000W AUDIO AMPLIFIER class D
    Text: -1- IRAUDPS1 12V System Scalable 250W to1000W Audio Power Supply For Class D Audio Power Amplifiers Using the IR2085 self oscillating gate driver And Direct FETS IRF6648 By Manuel Rodríguez CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of


    Original     		to1000W IR2085 IRF6648 7A/15A 1000w audio amplifier circuit diagram class D 12v 1000W AUDIO AMPLIFIER CIRCUIT DIAGRAM 1000w rms audio amplifier circuit diagram layout 12v 1000W AUDIO AMPLIFIER SCHEMATIC 100W smps amplifier circuit diagram class D 1000w 1000w smps audio amplifier circuit diagram 1000w transistor audio amplifier circuit diagram SCHEMATIC 12v 1000w smps 1000W AUDIO AMPLIFIER class D PDF

    XT120

    Abstract: No abstract text available
    Text: TK715xx Power Conversion ICs LOW DROPOUT VOLTAGE REGULATOR FEATURES APPLICATIONS • High Voltage Precision at ± 2.0% or ± 60 mV ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Very Low Quiescent Current Very Low Dropout Voltage Reverse Bias Protection


    OCR Scan     		TK715xx OT-23-3) TK715xx OT-23-3 XT120 PDF

    zener 6c2

    Abstract: sot-23 Marking 8C2 6c2 diode 5B1 zener diode sot-23 Diode SOT-23 marking 27C 5c1 zener diode SOT23 MARKING 5b1 27BSB 5B1 IR BZX84C
    Text: BZX84C-BS SERIES 4.7V to 36V SILICON PLANAR VOLTAGE REGULATOR DIODE FEATURES * Zener Voltage Range 4.7 to 36 Volts * SOT-23 Package * Low Voltage General Purpose Voltage Regulator Diode SOT-23 MECHANICAL DATA * * * * * .052 1.325 Case: Molded plastic Epoxy: UL 94V-O rate flame retardant


    Original     		BZX84C-BS OT-23 OT-23 MIL-STD-202E zener 6c2 sot-23 Marking 8C2 6c2 diode 5B1 zener diode sot-23 Diode SOT-23 marking 27C 5c1 zener diode SOT23 MARKING 5b1 27BSB 5B1 IR BZX84C PDF

    800w class d circuit diagram schematics

    Abstract: SCHEMATIC 1000w smps 1000w SMPS CIRCUIT DIAGRAM 1000w class d circuit diagram schematics 500w class d circuit diagram schematics amplifier circuit diagram class D 1000w SCHEMATIC 12v 1000w smps 1000w audio amp circuit diagram 1000w audio amplifier circuit diagram class D 800w audio amplifier circuit diagram
    Text: -1- IRAUDPS1 12V System Scalable 250W to1000W Audio Power Supply For Class D Audio Power Amplifiers Using the IR2085 self oscillating gate driver And Direct FETS IRF6648 By Manuel Rodríguez CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of


    Original     		to1000W IR2085 IRF6648 4V/800W 800w class d circuit diagram schematics SCHEMATIC 1000w smps 1000w SMPS CIRCUIT DIAGRAM 1000w class d circuit diagram schematics 500w class d circuit diagram schematics amplifier circuit diagram class D 1000w SCHEMATIC 12v 1000w smps 1000w audio amp circuit diagram 1000w audio amplifier circuit diagram class D 800w audio amplifier circuit diagram PDF