10e1 diode
Abstract: 10E1 033G
Text: ｓ DIODE 10E1 Type : OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.33g Rating Repetitive Peak Reverse Voltage
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10e1 diode
Abstract: 10E1
Text: ｓ DIODE 10E1 Type : OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.33g Rating Repetitive Peak Reverse Voltage
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10e1 diode
Abstract: No abstract text available
Text: Type：10E1 DIODE •OUTLINE DRAWING 構造 ：拡散型-整流用シリコンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧
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Type10E1
10e1 diode
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10E1
Abstract: 10e1 diode
Text: Type：10E1 DIODE •OUTLINE DRAWING 構造 ：拡散型-整流用シリコンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧
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Type10E1
10E1
10e1 diode
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1N538
Abstract: 1n1085a AMERICAN MICROSEMICONDUCTOR 1N1079 1HV15K 1N1084 Thyr
Text: American Microsemiconductor manufacturers of Diodes, Transistors, Thyr. 1 of 2 Home Part Number: 1N538 Online Store 1N538 Diodes Silic o n Re c t ifier Transistors Integrated Circuits Optoelectronics
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com/1n538
1N538
1N538
1n1085a
AMERICAN MICROSEMICONDUCTOR
1N1079
1HV15K
1N1084
Thyr
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10E2 diode
Abstract: 10E8 10e1
Text: SILICON RECTIFIER DIODE ia 1 0 E 1 — 10E8 /100 ~ 8 00 v FEATURES o o o ° o M iniature Size Low Forward Voltage Drop Low Reverse Leakage Current High Surge Capability 52mm Inside Tape Spacing Package Available MAXIMUM RATINGS ' " \ > Type 10E1 10E4 10E2
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10E4-10E8
10E2 diode
10E8
10e1
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Untitled
Abstract: No abstract text available
Text: SILICON RECTIFIER DIODE 10E1~10E8 i a /100~800 v FEATURES O M iniature Size 27U06 Dia 2.3 .091) o Low Forw ard Voltage D rop o Low Reverse Leakage C urrent o H igh Surge Capability 0.9(.035) DIA 0.7(.027) 27(1.06) ° 52mm Inside Tape Spacing Package Available
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27U06
00G2311
DGD231S
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cd74ac253
Abstract: No abstract text available
Text: Technical Data _ CD54/74AC253 CD54/74ACT253 Advance Information 10E1 I0 - II3 - 50 51 210 - Dual 4-Input Multiplexer, 3-State * «1- 5 112- 4 SEL/MUX -1V Type Features: Buffered inputs • Typical propagation delay: 6.3 ns @ Vcc = 5 V, f A = 25° C, CL = 50 pF
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CD54/74AC253
CD54/74ACT253
92CS-3
781P1
CD54/74ACT253
CD74AC253
CD74ACT253
16-lead
CD54/74AC
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10E2
Abstract: 10E1 10E4 10E6 10E8 10E2 diode
Text: SILICON RECTIFIER DIODE ia 1 0 E 1 — 10E8 /10 0 ~ 8 0 0 v « FEATURES ° Miniature Size o Low Forward Voltage Drop o Low Reverse Leakage Current o High Surge Capability ° 52mm Inside Tape Spacing Package Available 2.7 .106 DIA 2.3{.091) 0.9(.035) DIA 0.7(.027)
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IA/100
-10E2
A10E8
bi5123
0001bb3
10E2
10E1
10E4
10E6
10E8
10E2 diode
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10E2
Abstract: 10e1 diode 10E1 LOW FORWARD VOLTAGE DROP DIODE RECTIFIER 10E4 10E6 10E8 10E4-10E8 10E2 diode
Text: SILICON RECTIFIER DIODE ia/100~800 v ioei ~ ioe8 FEATURES o Miniature Size 2 7 U 0 6 D IA 2.3 .091) o Low Forward Voltage Drop o Low Reverse Leakage Current o High Surge Capability 0.9(.035) DIA 0.7(.027) ° 52mm Inside Tape Spacing Package Available 27( 1.06)
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A/100
bbl51i23
10E2
10e1 diode
10E1
LOW FORWARD VOLTAGE DROP DIODE RECTIFIER
10E4
10E6
10E8
10E4-10E8
10E2 diode
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10 35L DIODE
Abstract: 10e1 diode 10E1 10E2 20E1 20E2 TC74VCX162827FT diode 10 35L
Text: TO SH IBA TC74VCX162827FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T C 7 4 V C X 1 6 2 8 2 7 FT LOW-VOLTAGE 20-BIT BUS BUFFER WITH 3.6 V TOLERANT INPUTS AND OUTPUTS The TC74VCX162827FT is a high performance CMOS 20bit BUS BUFFER. Designed for use in 1.8, 2.5 or 3.3 Volt
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TC74VCX162827FT
20-BIT
TC74VCX162827FT
10-bit
10-bit
10 35L DIODE
10e1 diode
10E1
10E2
20E1
20E2
diode 10 35L
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10 35L DIODE
Abstract: 10e2 equivalent 10E1 10E2 20E1 20E2 TC74VCX16827FT 2a3391
Text: TO SH IBA _ TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC74VCX16827FT SILICON MONOLITHIC TC74VCX16827FT LOW-VOLTAGE 20-BIT BUS BUFFER WITH 3.6 V TOLERANT INPUTS AND OUTPUTS The TC74VCX16827FT is a high performance CMOS 20-bit
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TC74VCX16827FT
20-BIT
TC74VCX16827FT
10-bit
10-bit
10 35L DIODE
10e2 equivalent
10E1
10E2
20E1
20E2
2a3391
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification 20-bit buffer/line driver, non-inverting 3-State 74ABTH16827A FEATURES DESCRIPTION • Multiple Vqc and GND pins minimize switching noise The 74ABT16827A high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high
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20-bit
74ABTH16827A
74ABTH16827A
64mA/-32mA
500mA
74ABT16827A
74A0T16827A
BTH16827A
74ABT/H16
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC74VCX162827FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VCX162827FT LOW-VOLTAGE 20-BIT BUS BUFFER WITH 3.6V TOLERANT INPUTS AND OUTPUTS The TC74VCX162827FT is a high performance CMOS 20bit BUS BUFFER. Designed for use in 1.8, 2.5 or 3.3 Volt
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TC74VCX162827FT
20-BIT
TC74VCX162827FT
20bit
10-bit
lCC/20
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10E1
Abstract: 10E2 20E1 20E2 TC74VCX162827FT 10e2 equivalent
Text: TOSHIBA TC74VCX162827FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VCX162827FT LOW-VOLTAGE 20-BIT BUS BUFFER WITH 3.6 V TOLERANT INPUTS AND OUTPUTS The TC74VCX162827FT is a high performance CMOS 20bit BUS BUFFER. Designed for use in 1.8, 2.5 or 3.3 Volt
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TC74VCX162827FT
20-BIT
TC74VCX162827FT
10-bit
10-bit
TSSOP56-P-OQ61
10E1
10E2
20E1
20E2
10e2 equivalent
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motorola diode cross reference
Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Text: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3
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1N5817
1N5818
1M5819
MBR150
MBR160
MBR190
MBR1100
11DQ03
11DQ04
motorola diode cross reference
replacement UF5402
IR 30D1
diode IR 30D1
10DF2 "cross reference"
1n4007 "direct replacement"
diode RU4A
IR 10D4
1n5818 "direct replacement"
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Untitled
Abstract: No abstract text available
Text: TO SHIBA A D V A N CE INFORM ATION TC74VCX16827FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Tf74UfY1KS77FT LOW-VOLTAGE 20-BIT BUS BUFFER WITH 3.6V TOLERANT INPUTS AND OUTPUTS The TC74VCX16827FT is a high performance CMOS 20-bit BUS BUFFER. Designed for use in 1.8, 2.5 or 3.3 Volt
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TC74VCX16827FT
Tf74UfY1KS77FT
20-BIT
TC74VCX16827FT
10-bit
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC74VCX16827FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VCX16827FT LOW-VOLTAGE 20-BIT BUS BUFFER WITH 3.6 V TOLERANT INPUTS AND OUTPUTS The TC74VCX16827FT is a high performance CMOS 20-bit BUS BUFFER. Designed for use in 1.8, 2.5 or 3.3 Volt
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TC74VCX16827FT
20-BIT
TC74VCX16827FT
10-bit
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FIT4 diode
Abstract: mosfet LT 438 2SK2250-01 2SK2250-01L
Text: 2SK2250-01L, S FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • Features Outline Drawings • Hi'jh speed switching • Low on-resistance 2.3*0 2 • Nc secondary breakdown 0.5*0.! ri • Low driving power \± à • Hi jh voltage • V g ; = ± 30V Guarantee
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2SK2250-01L.
Tc-25X)
FIT4 diode
mosfet LT 438
2SK2250-01
2SK2250-01L
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification 16-bit buffer/line driver 3-State 74ABTH16541 FEATURES DESCRIPTION • Power-up 3-State The 74ABT16541 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high
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16-bit
74ABTH16541
74ABTH16541
500mA
74ABT16541
74ABT
500ns
SA00012
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H2A-7H
Abstract: 1a8h PU 54 111 X
Text: ù PERICOM Fast CMOS 3.3V 20-Bit Buffers Product Description: Product Features: • Compatible with LCX and LVT™ families of products • Supports 5V Tolerant Mixed Signal Mode Operation - Input can be 3V or 5V - Output can be 3V or connected to 5V bus
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20-Bit
56-pin
PS2075A
H2A-7H
1a8h
PU 54 111 X
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Untitled
Abstract: No abstract text available
Text: High-Speed C M O S 3 .3 V 20-Bit Buffer with Output Resistor Q u a l it y S e m ic o n d u c t o r , I n c . QS74LCX162827 PRELIMINARY FEATURES/BENEFITS DESCRIPTION • • • • • • • • • • The QS74LCX162827 is a 20-bit buffer that is ideal
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20-Bit
QS74LCX162827
500mA
56-lo
MDSL-00233-01
QS74LCX
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module MHPM7B30A60B Integrated Power Stage for 3.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A30E60DC3) This module integrates a 3 -p h a s e input rectifier bridge, 3 -phase
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MHPM7A30E60DC3)
MHPM7B30A60B
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1y5 diode
Abstract: S3332
Text: Philip* Semiconductor« Product specification 18-bit buffer/line driver; non-inverting 3-State „J 74ABTH16825A FEATURES DESCRIPTION • Multiple Vco and GND pins minimize switching noise The74ABT16825A high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high
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18-bit
74ABTH16825A
74ABTH16825A
64mA/-32mA
500mA
The74ABT16825A
74ABT/H16
500ns
1y5 diode
S3332
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