TK110E65Z
|
|
Toshiba Electronic Devices & Storage Corporation
|
N-ch MOSFET, 650 V, 0.11 Ω@10V, TO-220, DTMOS |
|
|
TRS10E65H
|
|
Toshiba Electronic Devices & Storage Corporation
|
SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L |
|
|
467-5010-E64
|
|
Amphenol Communications Solutions
|
VHDM-HSD™, Backplane connectors, Vertical Orientation, Press Fit Termination, 5 Row HSD, 10 positions, right, E-Key, 5.15mm (0.202in), Header. |
|
|
467-8110-E64
|
|
Amphenol Communications Solutions
|
VHDM-HSD™, Backplane connectors, Vertical Orientation, Press Fit Termination, 5 Row HSD, 10 positions, left, adv mate, E-Key, 5.15mm (0.202in), Header. |
|
|
492-5110-E62
|
|
Amphenol Communications Solutions
|
VHDM-HSD™, Backplane connectors, Vertical Orientation, Press Fit Termination, 6 Row HSD, 10 positions, left, E-Key, 6.25mm (0.246in), Header. |
|
|