Untitled
Abstract: No abstract text available
Text: SN74AHC1G04ĆQ1 SINGLE INVERTER GATE SCLS540A − AUGUST 2003 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds JESD 22 D D ±8-mA Output Drive at 5 V D Latch-Up Performance Exceeds 250 mA Per − 1500-V Human-Body Model A114-A
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SN74AHC1G04Q1
SCLS540A
500-V
A114-A)
A115-A)
000-V
SN74AHC1G04
OT-23)
SC-70)
SN74AHface
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ISO103
Abstract: No abstract text available
Text: ISO103 ISO 103 Low-Cost, Internally Powered ISOLATION AMPLIFIER FEATURES APPLICATIONS ● SIGNAL AND POWER IN ONE DOUBLE-WIDE 0.6" SIDE-BRAZED PACKAGE ● 5600Vpk TEST VOLTAGE ● 1500Vrms CONTINUOUS AC BARRIER RATING ● WIDE INPUT SIGNAL RANGE: –10V to +10V
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ISO103
5600Vpk
1500Vrms
20kHz
4-20mA
ISO103
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Untitled
Abstract: No abstract text available
Text: TPS62270, TPS62272 TPS62273 www.ti.com . SLVS799C – NOVEMBER 2007 – REVISED JANUARY 2009 2.25 MHz 400-mA Step Down Converter With Selectable VOUT
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TPS62270,
TPS62272
TPS62273
SLVS799C
400-mA
TPS62270
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SPZB250 USB coordinator
Abstract: 3-axis accelerometer 3 axis Accelerometers for rotation sensing LIS3LV02DL Program zigbee interfacing with pc AN2381 oem accelerometer SPZB250 3-axis Accelerometer filter aircraft storage batteries
Text: UM0562 User manual SPMB250-A1EVAL demonstration kit user manual and installation guide Introduction The SPMB250-A1 is a ready-to-use wireless acceleration sensor based on a 802.15.4compliant radio transceiver. The integration of two SPMB250-A1 modules together with an 802.15.4 ZigBee -based
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UM0562
SPMB250-A1EVAL
SPMB250-A1
SPZB250 USB coordinator
3-axis accelerometer
3 axis Accelerometers for rotation sensing
LIS3LV02DL Program
zigbee interfacing with pc
AN2381
oem accelerometer
SPZB250
3-axis Accelerometer filter
aircraft storage batteries
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K 2411 equivalent
Abstract: M48T18 M4T28-BR12SH M4T32-BR12SH SOH28 DS1643 M48T08 M48T08Y
Text: M48T08 M48T08Y, M48T18 5 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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M48T08
M48T08Y,
M48T18
M48T08:
M48T18/T08Y:
PCDIP28
K 2411 equivalent
M48T18
M4T28-BR12SH
M4T32-BR12SH
SOH28
DS1643
M48T08
M48T08Y
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AN2381
Abstract: SPZB250 SPZB250 USB coordinator LIS3LV02DL SN250 SPMB250-A1 Introduction to accelerometers
Text: UM0562 User manual SPMB250-A1EVAL demonstration kit user manual and installation guide Introduction The SPMB250-A1 is a ready-to-use wireless acceleration sensor based on a 802.15.4compliant radio transceiver. The integration of two SPMB250-A1 modules together with an 802.15.4 ZigBee -based
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UM0562
SPMB250-A1EVAL
SPMB250-A1
AN2381
SPZB250
SPZB250 USB coordinator
LIS3LV02DL
SN250
Introduction to accelerometers
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Untitled
Abstract: No abstract text available
Text: M48T08 M48T08Y, M48T18 5 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • ■ Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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M48T08
M48T08Y,
M48T18
M48T08:
M48T18/T08Y:
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Untitled
Abstract: No abstract text available
Text: TPS61220 TPS61221 TPS61222 www.ti.com . SLVS776 – JANUARY 2009 LOW INPUT VOLTAGE STEP-UP CONVERTER IN 6 PIN SC-70 PACKAGE
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TPS61220
TPS61221
TPS61222
SLVS776
SC-70
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NAND512R3A2D
Abstract: NAND512W3A2D NAND512W3A2 NI3087 t 0433 transistor
Text: NAND512xxA2D 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features ● ● High density SLC NAND flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width
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NAND512xxA2D
512-Mbit,
528-byte/264-word
TSOP48
VFBGA63
NAND512R3A2D
NAND512W3A2D
NAND512W3A2
NI3087
t 0433 transistor
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ICS9P750CF
Abstract: ICS954108CFLF ICS954103efln ics954108 ICS950816AGT ICS9176CM-03 ICS95 ICS954103EF ICS9P750CFT ICS950815BG
Text: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 Phone #: 408 284-8200 PRODUCT DISCONTINUANCE NOTICE (PDN) PDN #: Issue Date: Contact: Title: Phone #: Fax #: E-mail: K-08-07R1 10-Feb-2009 Last Buy Deadline for Submission of Order:
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K-08-07R1
10-Feb-2009
30-Aug-2008
30-Nov-2008
ICS954108CFLF
ICS954103EF,
ICS954103EFLN,
ICS954103EFLNT,
ICS954103EFLNT-IN0,
ICS954103EFT,
ICS9P750CF
ICS954103efln
ics954108
ICS950816AGT
ICS9176CM-03
ICS95
ICS954103EF
ICS9P750CFT
ICS950815BG
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Untitled
Abstract: No abstract text available
Text: TS3USB221 www.ti.com. SCDS220F – NOVEMBER 2006 – REVISED NOVEMBER 2008 HIGH-SPEED USB 2.0 480-Mbps 1:2 MULTIPLEXER/DEMULTIPLEXER SWITCH
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TS3USB221
SCDS220F
480-Mbps)
000-V
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N690A
Abstract: STN690A voltage regulator sot 223 ST IC Marking
Text: STN690A High performance low voltage NPN transistor Features • Very low collector to emitter saturation voltage ■ DC current gain, hFE > 100 ■ 3 A continuous collector current ■ 40 V breakdown voltage V BR CER ■ SOT-223 plastic package for surface mounting
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STN690A
OT-223
OT-223
N690A
STN690A
voltage regulator sot 223
ST IC Marking
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M48T08
Abstract: M48T08Y M48T18 DS1643 M4T28-BR12SH M4T32-BR12SH SOH28
Text: M48T08 M48T08Y, M48T18 5 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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M48T08
M48T08Y,
M48T18
PCDIP28
M48T08:
M48T18/T08Y:
M48T08
M48T08Y
M48T18
DS1643
M4T28-BR12SH
M4T32-BR12SH
SOH28
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K1346
Abstract: STW4511 Ericsson Databook ua3046
Text: STW4511 7-channel power management unit Features 2 step-down converters • ■ Vsdc1: 1 V to 1.5 V – 600 mA maximum output current – I2C control possibility – programmable default output voltage 1.45 V predefined value(a – OFF mode on external Pwren signal
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STW4511
K1346
STW4511
Ericsson Databook
ua3046
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NAND512W3A2D
Abstract: NAND512R3A2D
Text: NAND512xxA2D 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features High density SLC NAND flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width
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NAND512xxA2D
512-Mbit,
528-byte/264-word
TSOP48
VFBGA63
NAND512W3A2D
NAND512R3A2D
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Untitled
Abstract: No abstract text available
Text: STN690A High performance low voltage NPN transistor Features • Very low collector to emitter saturation voltage ■ DC current gain, hFE > 100 ■ 3 A continuous collector current ■ 40 V breakdown voltage V BR CER ■ SOT-223 plastic package for surface mounting
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STN690A
OT-223
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CNC MACHINE ELECTRICAL DIAGRAM
Abstract: No abstract text available
Text: TS5A22366 www.ti.com . SCDS262 – JANUARY 2009 0.7-Ω DUAL SPDT ANALOG SWITCH
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TS5A22366
SCDS262
CNC MACHINE ELECTRICAL DIAGRAM
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Untitled
Abstract: No abstract text available
Text: SN75LVDS83 FlatLink TRANSMITTER SLLS271H − MARCH 1997 − REVISED JULY 2006 D 4:28 Data Channel Compression at up to D D D D D D D D D D D D D 238 MBytes/s Throughput Suited for SVGA, XGA, or SXGA Display Data Transmission From Controller to Display With Very Low EMI
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SN75LVDS83
SLLS271H
20-Mil
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M48T08
Abstract: STMicroelectronics K 2411 equivalent
Text: M48T08 M48T08Y, M48T18 5 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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M48T08
M48T08Y,
M48T18
M48T08:
M48T18/T08Y:
28-lead
STMicroelectronics
K 2411 equivalent
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Untitled
Abstract: No abstract text available
Text: NAND512xxA2D NAND01GxxA2C 512-Mbit, 1-Gbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features ● ● High density SLC NAND flash memories – 512-Mbit, 1-Gbit memory array – Cost effective solutions for mass storage applications NAND interface
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NAND512xxA2D
NAND01GxxA2C
512-Mbit,
528-byte/264-word
TSOP48
VFBGA63
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zm7300kithks
Abstract: diode 10441 zm7308g 400pf ZM7332G MO-220 VMMD-3
Text: ZM7300G Series Digital Power Manager Data Sheet Member of the Family Features • • • • • • Applications • • • Low voltage, high density systems utilizing TM Z-One Digital Intermediate Bus Architectures Broadband, networking, optical, and wireless
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ZM7300G
ZM7300
ZD-00896
10FEB2009
zm7300kithks
diode 10441
zm7308g
400pf
ZM7332G
MO-220 VMMD-3
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t 0433 transistor
Abstract: NAND512R3A2D
Text: NAND512xxA2D NAND01GxxA2C 512-Mbit, 1-Gbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features ● ● High density SLC NAND flash memories – 512-Mbit, 1-Gbit memory array – Cost effective solutions for mass storage applications NAND interface
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NAND512xxA2D
NAND01GxxA2C
512-Mbit,
528-byte/264-word
TSOP48
VFBGA63
t 0433 transistor
NAND512R3A2D
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Untitled
Abstract: No abstract text available
Text: 2 THIS DRAWI NG IS UNPUBLISHED. C O P Y R I G H T 20 R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S C O R P O R A T I O N . A L L 20 LOC DI M -£3- 00 ES R 1G H T S R E S E RV E D. L ± R EV 1S I O N S DIST P LTR DESCRIPTION DATE DWN
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OCR Scan
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PDF
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14NOV2008
10FEB2009
16JAN2007
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ARP-GF
Abstract: 6m160 30 posn
Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. COPYRIGHT - BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST R E V IS IO N S DW LTR A DESCRIPTION DATE DWN SC WK 26FEB09 REVISED E C R — 0 9 — 0 0 4 5 0 5 APVD D D 71.8±0.20 C ALL SOLDERING LEADS AND LATCH FEET
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60X19)
60X79)
26FEB09
330x215x17
5x23x6
48x37x23
31MAR2000
ARP-GF
6m160
30 posn
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