MAX872CSA

Contextual Info: >kiyixi>ki 19-0005; Rev 2 ; 6/97 10fiA, Low-Dropout, Precision Voltage R e f e r e n c e s Description The MAX872/MAX874 precision 2.5V and 4.096V micro­ power voltage references consume a maximum of only 10^iA and operate from supply voltages up to 20V. The

ab802

Abstract: 1N5150A AB810 1N5149 1N5151 1N5153 1N5155 1N5157 1N5150 1N5152
Contextual Info: 0258354 ADVANCED SEMICONDUCTOR ADVANCED SEMICO ND UC TOR 82D 00079 02 D T -0 7 -U Ï > F | o 2SÛ354 OOGODTT ñ § ~ Silicon Power Multiplier Diodes WAÎTS OUTPUT FREQ ^our MHz POWER OUTPUT P o u r im WATTS BREAKDOWN VOLTAGE Vb IMINI @10fiA 500 20.0 1000 11.0

LTC13295

Contextual Info: r r i m LTC1329-10/ LTC1329-50/LTC1329A-50 m TECHNOLOGY M icropow er 8-Bit Current O utput D /A C onverter F€OTUR€S D € S C R IP T IO n • Guaranteed Precision Full-Scale DAC Output Current at 25°C: LTC1329A-50 50^iA±1% LTC1329-10 10fiA +3% LTC1329-50

f-30MHz

Abstract: 2N2483 2N2484
Contextual Info: H o TRANSISTOR CHIPS HIGH GAIN - SMALL SIGNAL NPN n oo \ / 100% Probe Tested to These Parameters @ 25°C h FE @VCe = 5V 2N2483 @IC= 10fiA @lc= 100mA @lc = 1mA 40120 75 Min 175 Min VcBO . V CEO Volts Mm;- Volts Min. @lc = @IC= 10mA 10mA •e =0 60 iB=o 60 /

ZU 107

Contextual Info: S OLITRON DEVICES INC bl D Ë J ö3t.öbOH DDD1S7Q 4 I ; N-CHANNEL ENHANCEMENT-MODE QUAD D-MOS FET DRIVER ARRAY ABSOLUTE MAXIMUM RATINGS Vos Drain-Source Voltage . Vsd Source-Drain Voltage . Vdb Drain-Body Voltage . . . . Vsb Source-Body Voltage . . . . . . . . . .

LM373

Abstract: MC1303L LM566 "direct replacement" transistor BD 540 LYS MFC6030 LM566 equivalent LM3039 SN72558P LM370 SN72741P
Contextual Info: Edge Index by Product Family Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communica­ tions and consumer-oriented circuits to precision instrumentation and computer designs.

2C4031

Abstract: 2C4030 2C4032 2C4033 ic4010
Contextual Info: P P C P R O D U C T S CORP 2C4030 2C4032 LjOE D bflSblll DDDO' ìSLd T7Q • PPC PNP Low Power Transistor Chips 2C4031 2C4033 I ^T-33-O \ FEATURES CHIP TYPE: AJ • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 20,000 A Nominal

Contextual Info: P-Channel Enhancement Mode MOSFET General Purpose Amplifier calocflc CORPORATION v IT1700 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • • • • • Low ON-Resistance High Gain Low Noise Voltage High Input Impedance Low Leakage

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor BCW72LT1 NPN Silicon MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter- Base Voltage Symbol Value Unit VCEO 45 Vdc v CBO 50 Vdc Ve b o 5.0 Vdc 'c 100 mAdc Collector Current — Continuous

Contextual Info: CAT93LC56/93LC56I I I I I I m a ll C R T R L Y 5 T ¡ S E M I C O N D U C T O R 2231 CALLE DE LUNA, SANTA CLARA. CA 95054 Telephone: 408 748-7700 CAT93LC56/93LC56I 2K BIT SERIAL E2PROM Preliminary DESCRIPTION FEATURES The C AT93LC 56 is a 3V CM OS 2K-bit serial

Contextual Info: TP S 9111 CELLULAR SUBSCRIBER TERMINAL POWER SUPPLY S L V S 1 3 4 - N O VE M B E R 1996 PW PACKAGE TOP VIEW C o m p l e t e P o w e r S u p p l y for Cel l ul ar Handsets T hr e e L o w - D r o p o u t R e g u l a t o r s ( L D O s ) with 1 00-m V D r o p o u t

icl7211

Abstract: icl7212 ICL7211A ICL7135 74c157 maxim max 1987 DI-61 digital LM311 SID ICL7135CJI ICL7135CPI
Contextual Info: A I^X IA I 19-5041; Rev 0; 1987 41 A D ig it A /D C o n v e rte r w ith M u ltip le x e d BCD O utputs _ Foaturma ♦ Improved 2nd Source See our “Maxim Advantage^” Page 3 The ICL7135 has auto-zero accuracy better than 10/i.V,

2222 mps2222

Abstract: GES2222 MPS2222 ges 2222 GES2221 PN2222
Contextual Info: Dl SOLID STATE 3875081 G E SOLID STATE 3Û7S0Ô1 DOlTTbH 7 01E 17962 D y- i s 1 Signal Transistors GES2221, GES2222, MPS2222, PN2222 Silicon Transistors Features: • Perform ance com parable to herm etic units * High Gain ■ L o w VCe sat ■ H igh Frequency

Contextual Info: MICROELECTRONICS XL93LC06-3 ExctUtnc» In £* Preliminary 256-Bit Serial 3V to 5V Electrically Erasable PROM with 2V Read Capability PIN C O N F IG U R A TIO N S FEA TU R ES • S tate-of-th e-A rt A rch itecture — N o nvolatile d ata sto rag e — 3V to 5V o peration

Transistor BSX 24

Abstract: BSX24 7626 transistor
Contextual Info: *BSX 24 NPN S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR NPN S ILIC IU M , PLAN A R E P IT A X IA L îfc Preferred device D is p o s itif recommandé General applications Applications générales Maximum power dissipation Case TO -18

3B75

Abstract: 914-1Q 1N914E
Contextual Info: DIODES 5 Guaranteed 100% Probe Tested to These Parameters @ 25°C COMPLEMENTARY SWITCHING DIODES ‘ AVAILABLE IN 16 PfN DIP ARRAYS V rr Volts Min. @ I r=100/ í A 1N914 i te s te d o n i I s a m p le b a sis I CT •f Ir pAMax. @ VR Votts mA Min. @ V f=1.0V

marking code SG transistors

Abstract: ic MARKING FZ 2SC4713K 2SC4774 marking code SG transistor
Contextual Info: 2SC4713K 2SC4774 Transistor, NPN Features • available in SMT3 SMT, SC-59 and UMT3 (UMT, SC-70) packages • package marking: 2SC4713K and 2SC4774; BM *, where ★ is hFE code • very low output on state resistance • low capacitance Applications • radio frequency amplifier

diode sg 64

Abstract: SG5774AJ SG5772J SG25768 sf 819 d 1N5772 JANTX 1N5768 SG25770J
Contextual Info: , SG5768/68A SG5770/70A, SG5772/72A, SG5774/74A SG25768, SG25770, SG6496/96A DIODE ARRAY CIRCUITS SILICON GENERAL LINEAR IN TEGRATED CIRCUITS DESCRIPTION FEATURES The Silicon General series of diode arrays feature high breakdown, high speed diodes in a variety of configurations.

Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only ISO8O6 B U R R - B R O W N 0 E 1 www.burr-brown.com/databook/IS0806.Mml DESCRIPTION T he IS 0 8 0 6 is a low -pow er isolated sam pling A D C using state-of-the-art C M O S structures and high vo lt­

CY 6152

Abstract: MMDF4N02 1N4I48
Contextual Info: « ik Micro Linear A D V A N C E IN F O R M A T IO N _ ML4862 Battery Power Control 1C GEN ERAL DESCRIPTION FEATURES Th e M L4 8 6 2 is a com p lete solution for D C to D C co n ve r­ sion and p o w e r m anagem ent in multi-cell battery pow ered

IC8013

Contextual Info: General Description Features T h e M IC 8 013 d riv e r is d e s ig n e d fo r use w ith liquid crysta l displays. A seria l da ta inte rface is use d to load an inte rnal register, w hich in turn co n tro ls th e s e g m e n t ou tputs. A FIFO ou tput allow s m u ltip le c h ip s to be casca ded an d p ro ­

ICL7664

Contextual Info: J V \ Æ X A J V \ P ro g ram m ab le N e g a tiv e Voltage R e g u la to r _General Description The ICL7664 is a high efficiency negative voltage regulator with a quiescent current of less than 10mA. The output voltage is set by two external resistors to

MOSFET 4166

Abstract: MAX774EPA
Contextual Info: 19-0191; Rev 1; 3/94 jv \ s \ y u jv \ -5V/-12V/-15V or Adjustable, High-Efficiency, Low I q Inverting DC-DC Controllers These ICs also use tiny external components; their high switching frequency up to 300kHz allows for less than 5mm diameter surface-mount magnetics.

24so2

Abstract: HSCH9201
Contextual Info: H E W L E T T - P A C K A R D n C M PN TS HEW LETT 'Í2J P A C K A R D SGE D 4447SÖ4 Q0D5bS3 G HSCH-9101 HSCH-9201 HSCH-9251 TXVW-9101 TXVW-9201 TXVW-9251 GaAS BEAM LEAD SCHOTTKY BARRIER DIODES Features GOLD TRI-METAL SYSTEM For Improved Reliability 2S0m.QE