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    MCT2E equivalent

    Abstract: c826 NPN c823 c815 CS15 TRANSISTOR c826 npn D9B diode C818 transistor c815 C2079
    Text: ~ûfl GENL INSTR t OPTOELEK DE 1 30=10150 □ □05'ibl l» T ~ PT"HI'B3 « G E N E R A I! iWRlSMEISTR MCT2E DESCRIPTION PACKAGE DIMENSIONS db f t f t I 6.86 .270 ^ 6.35 (.250) 0.36 (.014) I 0.20 (.008) 7.62 (.300) REF 8.38 (.330) 2Æ4(.100)TYP-*j 15° MAX


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    PDF C2090 C2079 MCT2E equivalent c826 NPN c823 c815 CS15 TRANSISTOR c826 npn D9B diode C818 transistor c815 C2079

    IS2837

    Abstract: 1S2837
    Text: 1 S 28 37,1S 2838 High Speed Sw itching Silicon Epitaxial Double Diodes : Com m on Cathode • Low capacitance: Ct =1.1pF TYP. • High speed switching: t r r =3.0ns M AX. • Wide applications including switching, lim itter, clipper. • Double diode configuration assures economical use.


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    PDF 1S2837, 1S2838 1S2837 S2838 IS2837 1S2837

    M37704

    Abstract: M37705M2AXXXSP M37704M2A m37705 p5g p3z PS5 1020 M37705S1ASP AL P3d P55 1020 MARK P5C
    Text: MITSUBISHI MICROCOMPUTERS M 37705M 2AXXXSP M M 3 7 7 0 5 M 2 -X X X S P and M 3 7 7 0 5 S 1 S P a re re s p e c tiv e ly unified into DESCRIPTION T h e M 3 7 7 0 5 M 2 A X X X S P and M 3 7 7 0 5 S 1 A S P a re sin g le -ch ip m icrocom puters d e s ig n ed


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    PDF M37705M2-XXXSP M37705S1SP M37705M2AXXXSP M37705S1ASP 16-BIT M37705S1ASP 64-pin M37704 M37704M2A m37705 p5g p3z PS5 1020 AL P3d P55 1020 MARK P5C