Untitled
Abstract: No abstract text available
Text: SUF-4000 0.15GHz to 10GHz, Cascadable pHEMT MMIC Amplifier SUF-4000 Proposed 0.15GHz to 10GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: 0.88mmx0.80mm Product Description Features RFMD’s SUF-4000 is a monolithically matched broadband high IP3 gain block covering 0.15GHz to 10GHz. This pHEMT FET-based amplifier uses
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SUF-4000
15GHz
10GHz,
88mmx0
SUF-4000
10GHz.
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pHEMT 6GHz
Abstract: InP transistor HEMT SUF-4000 10GHz mixer 4 TO 6GHz RF mixer
Text: SUF-4000 SUF-4000 0.15GHz to 10GHz, Cascadable pHEMT MMIC Amplifier 0.15GHz to 10GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: 0.88mmx0.80mm Product Description Features RFMD’s SUF-4000 is a monolithically matched broadband high IP3 gain block covering 0.15GHz to 10GHz. This pHEMT FET-based amplifier uses
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SUF-4000
15GHz
10GHz,
88mmx0
SUF-4000
10GHz.
pHEMT 6GHz
InP transistor HEMT
10GHz mixer
4 TO 6GHz RF mixer
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low-noise amplifier 10GHZ
Abstract: No abstract text available
Text: SUF-2000 0.2GHz to 10GHz, Cascadable pHEMT MMIC Amplifier SUF-2000 Proposed 0.2GHz to 10GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package:0.88mmx0.86mm Product Description Features RFMD’s SUF-2000 is a monolithically matched broadband high IP3 gain block covering 0.05GHz to 10GHz. This pHEMT FET-based amplifier uses
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SUF-2000
10GHz,
88mmx0
SUF-2000
05GHz
10GHz.
EDS-105416
low-noise amplifier 10GHZ
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10GHz filter
Abstract: iwaki narrowband optical filter 25GHz-channel DWDM 25ghz
Text: Data sheet Three-Port Add/Drop Multiplexer Family 25GHz Channels terra-Q 25 The Bookham Technology terra-Q narrowband filter family is based on thin-film interference filter technology. Features • ITU and Custom Wavelengths • 10GHz Clear-Channel Passband
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25GHz
10GHz
10GHz filter
iwaki
narrowband optical filter
25GHz-channel
DWDM 25ghz
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HFA3101
Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ 920mhz
Text: HFA3101 Data Sheet File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while
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HFA3101
HFA3101
10GHz)
RF NPN POWER TRANSISTOR C 10-12 GHZ
920mhz
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kf 8715
Abstract: 900mhz frequency generator Ic 9430 UPA101 transistors equivalent 9012 5GHz band pass filter 500E H3101B HFA3101B HFA3101B96
Text: HFA3101 Data Sheet September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while
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HFA3101
HFA3101
10GHz)
10GHz
kf 8715
900mhz frequency generator
Ic 9430
UPA101
transistors equivalent 9012
5GHz band pass filter
500E
H3101B
HFA3101B
HFA3101B96
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H3101B
Abstract: HFA3101B HFA3101 HFA3101B96 HFA3101BZ HFA3101BZ96 STD-020C UPA101 gilbert cell sum IC 7812 pin configuration
Text: HFA3101 Data Sheet September 2004 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while
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HFA3101
HFA3101
10GHz)
FN3663
UPA101
H3101B
HFA3101B
HFA3101B96
HFA3101BZ
HFA3101BZ96
STD-020C
UPA101
gilbert cell sum
IC 7812 pin configuration
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transistor npn c 9012
Abstract: HFA3101BZ 5GHz band pass filter
Text: HFA3101 Data Sheet September 2004 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while
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HFA3101
HFA3101
10GHz)
FN3663
UPA101
transistor npn c 9012
HFA3101BZ
5GHz band pass filter
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Untitled
Abstract: No abstract text available
Text: SRF11B09-010-1 SRF11B09-010 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 5371, REV - 8GHz to 10GHz Low Noise Amplifier Features •8 GHz to 10 GHz Frequency Range Typical Noise Figure < 1.2 dB Typical Gain 25 dB Gain Flatness < ± 1.5 dB
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SRF11B09-010-1
SRF11B09-010
10GHz
SRF11B09-10
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HFA3101
Abstract: 9700E fiber optic FM Modulator gilbert cell sum 8906 ic FM Modulator 2GHz 500E H3101B HFA3101B gilbert cell differential pair
Text: HFA3101 TM Data Sheet September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while
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HFA3101
HFA3101
10GHz)
10GHz
9700E
fiber optic FM Modulator
gilbert cell sum
8906 ic
FM Modulator 2GHz
500E
H3101B
HFA3101B
gilbert cell differential pair
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kf 8715
Abstract: fiber optic FM Modulator gilbert cell sum RF TRANSISTOR 10GHZ FM Modulator 2GHz rf digital modulators ic 50E08 stub tuner matching 500E HFA3101
Text: HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array July 1995 Features Description • High Gain Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI
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HFA3101
10GHz
HFA3101
10GHz)
390nH
825MHz
900MHz
75MHz
76MHz
kf 8715
fiber optic FM Modulator
gilbert cell sum
RF TRANSISTOR 10GHZ
FM Modulator 2GHz
rf digital modulators ic
50E08
stub tuner matching
500E
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Harris HFA3101 5 GHz Gilbert cell array
Abstract: Array chip resistors fiber optic FM Modulator FM Modulator 2GHz 500E 800E H3101B HFA3101 reactance modulator HFA3101B96
Text: HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array August 1996 Features Description • High Gain Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI
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HFA3101
10GHz
HFA3101
10GHz)
Harris HFA3101 5 GHz Gilbert cell array
Array chip resistors
fiber optic FM Modulator
FM Modulator 2GHz
500E
800E
H3101B
reactance modulator
HFA3101B96
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rf mems switch
Abstract: full automatic Washing machines circuit diagram 2SMES-01-EVBA at10GHz
Text: RF MEMS Switch 2SMES-01 Surface-mount ,10GHz Band typical , Miniature, SPDT - NO, RF MEMS Switch • Superior high-frequency characteristics at 10 GHz typical / 8 GHz rated (50Ω) Isolation of 30 dB Insertion loss of 1dB ■ Ultra-miniature 5.2x3.0×1.8 mm (L×W×H).
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2SMES-01
10GHz
100million
rf mems switch
full automatic Washing machines circuit diagram
2SMES-01-EVBA
at10GHz
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JXWBHP-M818C
Abstract: FR2 PCB JXWBHP-M0518C m2068 M50C JXWBHP-M83 10GHz RF mixer
Text: Mixers The content of this specification may change without notification 7/01/09 Mixers Broadband 0.01 to 20GHz Coaxial JXWBHP-MY82 Drop-in package JXWBHP-M046 (Drop-in package) JXWBHP-MY82C (Connector package) JXWBHP-M046C (Connector package) Items LO(RF) (GHz)
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20GHz
JXWBHP-MY82
JXWBHP-M046
JXWBHP-MY82C
JXWBHP-M046C
20dbm
18GHz
10GHz
JXWBHP-M818C
FR2 PCB
JXWBHP-M0518C
m2068
M50C
JXWBHP-M83
10GHz RF mixer
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1r100
Abstract: DRT193U040 38T1 VCO 5GHz DRT163U040 Microwave oscillators DRR020 DRD046U DRD051U TVRO
Text: This is the PDF file of catalog No.O95E-7. No.O95E7.pdf 00.7.21 Dielectric Resonator RESOMICS RESOMICS® Murata Manufacturing Co., Ltd. Cat.NoO95E-7 This is the PDF file of catalog No.O95E-7. Index TE mode Resonator U Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 6
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O95E-7.
O95E7
NoO95E-7
1r100
DRT193U040
38T1
VCO 5GHz
DRT163U040
Microwave oscillators
DRR020
DRD046U
DRD051U
TVRO
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bfp410
Abstract: DRO lnb BGA420 transistor frequency 1.5GHz gain 20 dB
Text: BFP410 NPN Silicon RF Transistor • Low current device suitable e.g. for handhelds 3 • For high frequency oscillators e.g. DRO for LNB 2 4 • For ISM band applications like 1 Automatic Meter Reading, Sensors etc. • Transit frequency f T = 25 GHz • Pb-free RoHS compliant package
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BFP410
OT343
bfp410
DRO lnb
BGA420
transistor frequency 1.5GHz gain 20 dB
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DRZ006ZT
Abstract: DRT107-DRT210 VCO 9GHZ 10GHZ VCO 10GHZ oscillator DRT051-DRT099 dielectric resonator DRR020 1G200 DRD046-DRD107 DRD117-DRD347
Text: !Note Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this PDF catalog to prevent smoking and/or burning, etc. This catalog has only typical specifications. Therefore, you are requested to approve our product specifications or to transact the approval sheet for product specificaions before ordering.
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O95E9
O95E-9
DRZ006ZT
DRT107-DRT210
VCO 9GHZ 10GHZ
VCO 10GHZ oscillator
DRT051-DRT099
dielectric resonator
DRR020
1G200
DRD046-DRD107
DRD117-DRD347
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Untitled
Abstract: No abstract text available
Text: BFP410 NPN Silicon RF Transistor • Low current device suitable e.g. for handhelds 3 • For high frequency oscillators e.g. DRO for LNB 2 4 • For ISM band applications like 1 Automatic Meter Reading, Sensors etc. • Transit frequency f T = 25 GHz • Pb-free RoHS compliant package
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BFP410
OT343
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temex ceramics
Abstract: No abstract text available
Text: DIELECTRIC RESONATORS Operating frequencies in wireless communications have shifted towards high frequency band, and thus frequencies higher than 1 GHz are now commonly utilized. In addition, the microwave frequency spectrum becoming severely crowded and sub-divided into many different frequency bands,
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10GHz
E4000
E7000
temex ceramics
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3g phone CIRCUIT diagram
Abstract: Primarion RF TRANSISTOR 10GHZ low noise microprocessor. FOR DEAL 3g transistor use of microprocessors in cell phones
Text: System Approaches to Power Management Dennis Monticelli National Semiconductor 2900 Semiconductor Drive Santa Clara, CA 95051 Abstract – The performance demands of new systems are forcing new approaches to solving complex power management problems. Solutions will require a system approach where
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10GHz
3g phone CIRCUIT diagram
Primarion
RF TRANSISTOR 10GHZ low noise
microprocessor. FOR DEAL
3g transistor
use of microprocessors in cell phones
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mmic era3
Abstract: No abstract text available
Text: AMPLIFIERS Designer's Kit K1-ERA+ MINI-CIRCUITS DESIGNER'S KITS THE SOLUTION ! DC to 8GHz ERA+ Features • Wideband, 50Ω • Up to 13.0dBm typ. output power • Low thermal resistance • Miniature microwave amplifier • Plastic drop-in package All models are
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10GHz
M106024
mmic era3
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MIL C 38999
Abstract: jam nut 38999
Text: Call 800-678-0141 H 38999 Product Data Sheet PDS-208-9 A connector that has the connections. High Density The HD38999 family of connectors was designed to work with existing mil-specified 38999 shells. To the end users familiar with standard 38999 connectors, this family
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PDS-208-9
HD38999
MIL C 38999
jam nut 38999
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3101-B
Abstract: h3101 Harris HFA3101 5 GHz Gilbert cell array csf 78-12
Text: CSF! H A R R I S W HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array November 1996 Features • Description High Gain Bandwidth Product fT .10GHz • High Power Gain Bandwidth P ro d u c t. 5GHz •
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HFA3101
HFA3101
10GHz)
10GHz
1320nm
3101-B
h3101
Harris HFA3101 5 GHz Gilbert cell array
csf 78-12
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transistor ITT 2907
Abstract: transistor itt 975 MC 931 transistor 24GHz UHF transistor band pass filter 2GHz 7812 a
Text: Ü Î H U S E M I C O N D U C T O R U A R R HFA3101 I S Gilbert Cell UHF Transistor Array Ju ly 1995 Features Description • High Gain Bandwidth Product fT .10GHz The HFA3101 is an all N PN transistor array configured as a • High Pow er Gain Bandwidth P r o d u c t .5GHz
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HFA3101
HFA3101
10GHz
15dBc
28dBc
22dBc
76MHz
825MHz
50MHz
transistor ITT 2907
transistor itt 975
MC 931 transistor
24GHz UHF transistor
band pass filter 2GHz
7812 a
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