A125
Abstract: B125 C125 D125 10H4503
Text: VRRM IF AV M IFSM V(T0) rT VDClink = = = = = = 4500 1100 20x103 1.75 0.88 2800 V A A V mΩ V Fast Recovery Diode 5SDF 10H4503 Doc. No. 5SYA1163-01 Oct. 06 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating
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10H4503
5SYA1163-01
CH-5600
A125
B125
C125
D125
10H4503
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Untitled
Abstract: No abstract text available
Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 1170 20 1.75 0.75 2800 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 10H4503 PRELIMINARY Doc. No. 5SYA1163-00 Jan. 01 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating
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10H4503
5SYA1163-00
CH-5600
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10H45
Abstract: No abstract text available
Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 1170 20 1.75 0.75 2800 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 10H4503 PRELIMINARY Doc. No. 5SYA1163-00 Sep. 01 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating
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10H4503
5SYA1163-00
CH-5600
10H45
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10H4503
Abstract: abb b25
Text: VRRM IF AV M IFSM V(T0) rT VDClink = = = = = = 4500 1100 20x103 1.75 0.88 2800 V A A V mΩ V Fast Recovery Diode 5SDF 10H4503 Doc. No. 5SYA1163-01 Nov. 04 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating
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10H4503
5SYA1163-01
CH-5600
10H4503
abb b25
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5SDF28L4520
Abstract: 8106AS 28L4520 VF125 tfr 586 ABB rcl 5SDF 28L4520
Text: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 4500 2750 40x103 1.35 0.38 2800 V A A V m V Fast Recovery Diode 5SDF 28L4520 Preliminary Doc. No. 5SYA1185-01 Dec. 11 • Industry standard housing Cosmic radiation withstand rating Optimized low on-state
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28L4520
5SYA1185-01
CH-5600
5SDF28L4520
8106AS
28L4520
VF125
tfr 586
ABB rcl
5SDF 28L4520
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IGCT 7000
Abstract: No abstract text available
Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 5500 33x103 1.15 0.30 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 55L4500 Doc. No. 5SYA1243-04 May 08 • High snubberless turn-off rating • Optimized for medium frequency • High electromagnetic immunity
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55L4500
5SYA1243-04
CH-5600
IGCT 7000
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IGCT 7000
Abstract: 55L4500 high power igct abb
Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 5000 33x103 1.15 0.30 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 55L4500 Doc. No. 5SYA1243-05 Jan 10 • High snubberless turn-off rating • Optimized for medium frequency • High electromagnetic immunity
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55L4500
5SYA1243-05
CH-5600
IGCT 7000
55L4500
high power igct abb
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Fast Recovery Diodes
Abstract: 5SDF-20L4520
Text: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 4500 1950 38x103 1.70 0.80 2800 V A A V Fast Recovery Diode 5SDF 20L4520 m V Doc. No. 5SYA1184-02 Feb. 13 Industry standard housing Cosmic radiation withstand rating Optimized low switching losses Optimized for snubberless operation
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20L4520
5SYA1184-02
CH-5600
Fast Recovery Diodes
5SDF-20L4520
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Untitled
Abstract: No abstract text available
Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 32x103 1.4 0.325 2800 V A A V mW V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4520 Doc. No. 5SYA1248-01 July 14 • High snubberless turn-off rating · Optimized for medium frequency · High electromagnetic immunity
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35L4520
5SYA1248-01
CH-5600
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35L4520
Abstract: IGCT high voltage
Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 32x103 1.4 0.325 2800 V A A V m V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4520 Doc. No. 5SYA1248-00 Feb. 12 • High snubberless turn-off rating Optimized for medium frequency High electromagnetic immunity
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35L4520
5SYA1248-00
CH-5600
35L4520
IGCT high voltage
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35L4522
Abstract: high power igct abb
Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 35x103 1.15 0.21 2800 V A A V m V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4522 Doc. No. 5SYA1249-00 Feb.12 • High snubberless turn-off rating Optimizedfor low frequency High electromagnetic immunity
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35L4522
5SYA1249-00
CH-5600
35L4522
high power igct abb
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HFBR-1528Z
Abstract: A125 B125 HFBR-2521Z MTA-156 IGCT thyristor current max igct abb 40L4511
Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 3600 28x103 1.7 0.454 2800 V A A V m V Asymmetric Integrated GateCommutated Thyristor 5SHY 40L4511 Doc. No. 5SYA1252-00 March 11 • High snubberless turn-off rating Optimized for medium frequency High electromagnetic immunity
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40L4511
5SYA1252-00
CH-5600
HFBR-1528Z
A125
B125
HFBR-2521Z
MTA-156
IGCT thyristor current max
igct abb
40L4511
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HFBR-2521Z
Abstract: 6227-1 j-900 HFBR-1528Z
Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 32x103 1.4 0.325 2800 V A A V m V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4521 Doc. No. 5SYA1253-00 Feb. 12 • High snubberless turn-off rating Optimized for medium frequency High electromagnetic immunity
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35L4521
5SYA1253-00
CH-5600
HFBR-2521Z
6227-1
j-900
HFBR-1528Z
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5SDF20L4520
Abstract: 5SDF-20L4520 20L45 ABB diodes
Text: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 4500 2010 30x103 1.86 0.71 2800 V A A V m V Fast Recovery Diode 5SDF 20L4520 Preliminary Doc. No. 5SYA1184-01 Dec. 11 • Industry standard housing Cosmic radiation withstand rating Optimized low switching losses
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20L4520
5SYA1184-01
CH-5600
5SDF20L4520
5SDF-20L4520
20L45
ABB diodes
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Fast Recovery Diodes
Abstract: 5SDF28L4520
Text: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 4500 2620 48x103 1.10 0.47 2800 V A A V Fast Recovery Diode 5SDF 28L4520 m V Doc. No. 5SYA1185-02 Feb. 13 Industry standard housing Cosmic radiation withstand rating Optimized low on-state Optimized for snubberless operation
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28L4520
5SYA1185-02
320TO,
CH-5600
Fast Recovery Diodes
5SDF28L4520
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FSV 052
Abstract: No abstract text available
Text: F A S T R E C O V E R Y _ D - I O D E S - O ptim iert für schnelles und weiches Ausschaltverhalten. - Kleine Speicherladung. - Hohes zulässiges d i/d t beim Aus schalten. - Vollständiges Sortiment für den Einsatz mit GTOs.
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05D2505
11F2501
07F4501
13H4501
5SDF14H4505
10H6004
01R2501
01R2502
01R2503
01R2504
FSV 052
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