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    TW9910-LB2-GR Renesas Electronics Corporation Low Power NTSC/PAL/SECAM Video Decoder with VBI Slicer Visit Renesas Electronics Corporation
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    Renesas Electronics Corporation TW9910-LB2-GR

    IC DECOD VIDEO NTSC/PAL/SECAM
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    DigiKey TW9910-LB2-GR Tray
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    Rochester Electronics TW9910-LB2-GR 1,240 1
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    Power-Sonic Corporation CB10L-B2

    Sealed Lead Acid Battery CB10L-B2; 12Volt 11Amp
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    Mouser Electronics CB10L-B2
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    Intersil Corporation TW9910-LB2-GR

    TW9910 - Low Power NTSC/PAL/SECAM Video Decoder with VBI Slicer '
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    Rochester Electronics TW9910-LB2-GR 2,750 1
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    SK Hynix Inc HT10LB2MBKLTM

    HYUNDAI 10IN LTE UNLOCKED
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    NAC HT10LB2MBKLTM 1
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    Power Sonic Corporation CB10L-B2-NA

    Power-Sonic CB10L-B2 No Acid;12Volt 11Amp
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    Sager CB10L-B2-NA
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    10LB2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC4987

    Abstract: ITR07808 ITR07809 ITR07810 ITR07811 ITR07812
    Text: Ordering number:ENN4723 NPN Epitaxial Planar Silicon Transistor 2SC4987 High-Speed Switching Applications Features Package Dimensions • High-speed switching. · Low collector saturation voltage. · High gain-bandwidth product. · Small collector capacitance.


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    ENN4723 2SC4987 2SC4987] 2SC4987 ITR07808 ITR07809 ITR07810 ITR07811 ITR07812 PDF

    MARKING dk

    Abstract: 2sd1628
    Text: ^ O r d e r in g num ber : EN 1 7 8 1 A 2SD1628 SA\YO NPN Epitaxial Planar Silicon Transistor i High-Current Switching Applications Applications . Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drivers. Features . Low saturation voltage.


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    2SD1628 250mm 10lB2 5277KI/3045MW 250mm2* MARKING dk 2sd1628 PDF

    2SB1302

    Abstract: No abstract text available
    Text: Ordering number: EN 2 5 5 5 A 2 S B 1 3 02 N0.2555A SAXYO PNP Epitaxial Planar Silicon Transistor i High-Current Switching Applications Applications . DC-DC converters, motor drivers, relay drivers, lamp drivers Features . Adoption of FBET, MBIT processes


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    2SB1302 250mm2 PDF

    M338

    Abstract: J300j nj037 2SA1338 2SC3392 marking al WA1 marking M338 NPN
    Text: Ordering num ber:EN 1 4 2 1 A 2SA1338/2SC3392 No.1421A SANYO PNP/NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications I Features • • • • Adoption of FBET process High breakdown voltage: VCEO= - 50V Large current capacity and high fT


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    2SA1338/2SC3392 2SA1338 60fficers M338 J300j nj037 2SC3392 marking al WA1 marking M338 NPN PDF

    2SA1416

    Abstract: 2SC3646
    Text: Ordering number:EN2005A 2SA1416/2SC3646 NO.2005A SA \YO PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications 1 Features . Adoption of FBET, MBIT processes. . High breakdown voltage and large current capacity. . Fast switching time.


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    EN2005A 2SA1416/2SC3646 2SA1-416 2005-V4 2SA1416 2SC3646 PDF

    2SA778

    Abstract: 2SA778A
    Text: HITACHI 2SA778 k , 2SA778A(g> SILICON PNP EPITAXIAL HIGH VOLTAGE MEDIUM SPEED SWITCHING I, Emitter Î. Collector 3. Buse (Dimensions in mm) (JE D E C TO-92) I ABSO LU T E MAXIMUM RATINGS (Ta-25aC) Item Symbol 2SA 778 MAXIMUM COLLECTOR DISSIPATION CURVE 2SA 778A®


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    2SA778 2SA778A 2SA778Â 2SA77RAÂ 2SA778AÂ PDF

    TE 2198

    Abstract: No abstract text available
    Text: n u m b e r : EN 3149 2SB1449/2SD2198 No.3149 PNP/NPN Epitaxial P lanar Silicon Transistors SA%YO High-Current Switching Applications F e a tu re s •Surface mount type device making the following possible -Reduction in the number of manufacturing processes for 2SB1449/2SD2198-applied equipment


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    2SB1449/2SD2198 2SB1449/2SD2198-applied sizeof2SB1449/2SD2198-applied 2SB1449 -10lB2= 703SMO 2SB1449/2SD TE 2198 PDF

    C4027

    Abstract: SC 2262 2SD4027 2sc4027-applied 2SA1552 2SC4027 500mAIB
    Text: SANYO S E M I C O N D U C T O R CORP S2E D i m 07b O D 0 7 0 bQ 1 2SA1552, 2SC4027 T ' 33' ì l T-33'01 P N P /N P N Epitaxial Planar Silicon Transistors 2044 High-Voltage Switching Applications 2262B Applications . Converters, inverters, color TV audio output


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    GQ070b0 2SA1552, 2SC4027 2SA1552/2SC4027-applied 2SA1552 C4027 SC 2262 2SD4027 2sc4027-applied 500mAIB PDF

    lm 4453

    Abstract: No abstract text available
    Text: Ordering number: EN4656 No.4656 _FP105 TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode DC/DC Converter Applications F eatures • Composite type with a PNP transistor and a Schottky barrier diode contained in one packge,


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    EN4656 FP105 2SB1123 SB05-05CP, 250mm2X lm 4453 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 1392A _ 2SA1339/2SC3393 N0.1392A SA\YO PNP/ NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications Features • • • • Very small-sized package permitting sets to be small-sized, slim High breakdown voltage: Vc e o = ” 50V


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    2SA1339/2SC3393 2SA1339 3197KI/1114KI PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering num ber: EN 4 4 9 6 SANYO _FP203 PNP/NPN Epitaxial Planar Silicon Transistors No.4496 i Push-Pull Circuits F eatu res • Composite type with 2 transistors of PNP transistor and NPN transistor, facilitating high-density mounting.


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    FP203 2SB1122 2SD1622, 250mm2X0 250mm2X PDF

    MARKING AL

    Abstract: 2SA1338
    Text: ¡ Ordering number EN 1 4 2 1 A J SA S.YO 2SA1338/2SC3392 N0 . 14 2 1 A PNP/NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications Features • • • • Adoption of FBET process High breakdown voltage: VCEO= - 50V Large current capacity and high fi>


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    2SA1338/2SC3392 2SA1338 1114KI 1338/2S MARKING AL 2SA1338 PDF

    si 13001

    Abstract: transistors 13001 513P HA 13001 LB 13001 TA-3082 SB633 IC HA 13001 2SB633P 2SD613P
    Text: Ordering number : ENN6662 PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P ISAfÊYOl 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions •High breakdown voltage, VCEO 85V, high current 6A. •AF 35 to 45W output. unit : mm


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    ENN6662 2SB633P 2SD613P 2SD613P] O-220 si 13001 transistors 13001 513P HA 13001 LB 13001 TA-3082 SB633 IC HA 13001 PDF

    XM21A

    Abstract: C-160304 2SA1338 2SC3392 A1338 00B7
    Text: SANYO SEMICONDUCTOR CO RP 22E D 2SA1338, 2SC3392 • 7 ‘n7Q7fci 0 Q 0 7 0 4 Ö Q ■ T-37-15 T-3S-U P N P /N PN Epitaxial Planar Silicon Transistors 2018A High-Speed Switching Applications Features • Adoption of FBET process • High breakdown voltage; VCEO= ->50V


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    2SA1338, 2SC3392 2018a XM21A 2SA1338 XM21A C-160304 2SA1338 A1338 00B7 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 4657 _FP303 TR : NPN Epitaxial Planar Silicon Transistor No.4657 SBD : Schottky Barrier Diode I DC-DC Converter Applications F eatures • Composite type with NPN transistor and Schottky barrier diode facilitates high-density mounting.


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    FP303 2SD1623 SB05-05CP, PDF

    .W07B

    Abstract: W07b 722G 2SB828 2SB82B 2SD1064 as1012
    Text: Ordering number: EN 722G 2SB828/2SD1064 N0.722G PNP/NPN Epitaxial P lan ar Silicon Transistors 50V/12A Switching Applications A p p licatio n s • Relay drivers, high-speed inverters, converters, and other general high-current switching applications. F e a tu re s


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    2SB828/2SD1064 0V/12A 2SB828 2SD1064 .W07B W07b 722G 2SB82B as1012 PDF

    2SD439E

    Abstract: 2SC536E 2SC536E,F zkb transformer 2SD439 2SC536EF sirio 2SC536 sanyo 2SC536e b559
    Text: SANYO SEMICONDUCTOR CORP lfiE D I ? cn ? G 7 t . □ □□ M 'i lS T~33- 2SD439 N P N / pnp Epitaxial P lan a r 2 00 9 A S ilic o n T ra n sisto rs Low Frequency Power Amp, Medium Speed Switching Applications 2SB559 372E Features . Large allowable collector dissipation and wide ASO.


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    MC11S 2SB559 2SD439E 2SC536E 2SC536E,F zkb transformer 2SD439 2SC536EF sirio 2SC536 sanyo 2SC536e b559 PDF