SiB411DK-T1-GE3
Abstract: SC-75 SiB411DK
Text: SiB411DK Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.066 at VGS = - 4.5 V - 9a 0.094 at VGS = - 2.5 V - 9a 0.130 at VGS = - 1.8 V a -9 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
|
Original
|
PDF
|
SiB411DK
SC-75
SC-75-6L-Single
SiB411DK-T1-GE
11-Mar-11
SiB411DK-T1-GE3
|
SC-75
Abstract: No abstract text available
Text: New Product SiB415DK Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, f RDS(on) (Ω) - 30 0.087 at VGS = - 10 V -9 0.158 at VGS = - 4.5 V - 7.2 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
|
Original
|
PDF
|
SiB415DK
SC-75
SC-75-6L-Single
SiB415DK-T1-GE3
08-Apr-05
|
SiB411DK
Abstract: SC-75 SiB411DK-T1-GE3
Text: SiB411DK Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.066 at VGS = - 4.5 V - 9a 0.094 at VGS = - 2.5 V - 9a 0.130 at VGS = - 1.8 V a -9 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
|
Original
|
PDF
|
SiB411DK
SC-75
SC-75-6L-Single
SiB411DK-T1-GElectual
18-Jul-08
SiB411DK-T1-GE3
|
SC-75
Abstract: No abstract text available
Text: New Product SiB415DK Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, f RDS(on) (Ω) - 30 0.087 at VGS = - 10 V -9 0.158 at VGS = - 4.5 V - 7.2 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
|
Original
|
PDF
|
SiB415DK
SC-75
SC-75-6L-Single
SiB415DK-T1-GE3
18-Jul-08
|
DIN EN 60115-1
Abstract: size 0204 MBA0204 beyschlag mba MBA/SMA 0204 HF cecc 40101-806 MBA 0204 HF 51R0 Leaded Resistors - Packaging MBA MARKING
Text: MBA/SMA 0204 HF Vishay Beyschlag High Frequency > 3 GHz Leaded Resistors FEATURES • Speciality product for RF applications MBA/SMA 0204 HF leaded thin film resistors for RF applications are the perfect choice in high frequency circuit designs; where the impedance change due to the parasitic
|
Original
|
PDF
|
18-Jul-08
DIN EN 60115-1
size 0204
MBA0204
beyschlag mba
MBA/SMA 0204 HF
cecc 40101-806
MBA 0204 HF
51R0
Leaded Resistors - Packaging
MBA MARKING
|
Vishay 0414 resistor
Abstract: 60286-1 mar 806 UXB 0207 DIN EN 140000 DIN EN 60115-1 DIN EN 60286-1 E192 Series E192 UXA0204
Text: UXA 0204, UXB 0207, UXE 0414 Vishay Beyschlag High Precision Leaded Resistors FEATURES • Superior thin film technology • • • • • • DESCRIPTION UXA 0204, UXB 0207 and UXE 0414 high precision leaded thin film resistors combine the proven reliability of the
|
Original
|
PDF
|
18-Jul-08
Vishay 0414 resistor
60286-1
mar 806
UXB 0207
DIN EN 140000
DIN EN 60115-1
DIN EN 60286-1
E192 Series
E192
UXA0204
|
Untitled
Abstract: No abstract text available
Text: New Product SiB413DK Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, f 0.075 at VGS = - 4.5 V -9 0.143 at VGS = - 2.5 V - 7.8 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
|
Original
|
PDF
|
SiB413DK
SC-75
SC-75-6L-Single
SiB413DK-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SiB411DK Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.066 at VGS = - 4.5 V - 9a 0.094 at VGS = - 2.5 V - 9a 0.130 at VGS = - 1.8 V a -9 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
|
Original
|
PDF
|
SiB411DK
SC-75
SC-75-6L-Single
SiB411DK-T1-GE3
11-Mar-11
|
SC-75
Abstract: No abstract text available
Text: New Product SiB414DK Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.026 at VGS = 4.5 V 9a 0.030 at VGS = 2.5 V 9a 0.037 at VGS = 1.8 V 9 a 0.052 at VGS = 1.5 V 9a 0.089 at VGS = 1.2 V 9a • Halogen-free
|
Original
|
PDF
|
SiB414DK
SC-75
SC-75-6L-Single
11-Mar-11
|
SC-75
Abstract: SiB412DK SiB412DK-T1-GE3 529B
Text: New Product SiB412DK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 9a 0.040 at VGS = 2.5 V 9a 0.054 at VGS = 1.8 V a 9 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
|
Original
|
PDF
|
SiB412DK
SC-75
SC-75-6L-Single
SiB412DK-T1-GE3
11-Mar-11
529B
|
Untitled
Abstract: No abstract text available
Text: New Product SiB911DK Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.295 at VGS = - 4.5 V - 2.6 0.420 at VGS = - 2.5 V - 2.2 0.560 at VGS = - 1.8 V - 1.9 Qg (Typ.) 1.6 nC • Halogen-free • TrenchFET Power MOSFET
|
Original
|
PDF
|
SiB911DK
SC-75
SC75-6L-Dual
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: New Product SiB414DK Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.026 at VGS = 4.5 V 9a 0.030 at VGS = 2.5 V 9a 0.037 at VGS = 1.8 V 9 a 0.052 at VGS = 1.5 V 9a 0.089 at VGS = 1.2 V 9a • Halogen-free
|
Original
|
PDF
|
SiB414DK
SC-75
SC-75-6L-Single
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
CBB0207
Abstract: 24703 resistor 1.5 k DIN EN 140000 51R1 0207 resistor CECC 40101-806 S B C cecc 40101-806 Leaded Resistors - Packaging
Text: CBB 0207 Vishay Beyschlag High Pulse Load Leaded Resistors FEATURES • Speciality product for EMC sensitive applications • Special carbon film technology for maximum heat stress capability • Up to 6 kV or 140 W pulse load capability • Resistance range: 10 Ω to 1.5 MΩ
|
Original
|
PDF
|
18-Jul-08
CBB0207
24703
resistor 1.5 k
DIN EN 140000
51R1
0207 resistor
CECC 40101-806 S B C
cecc 40101-806
Leaded Resistors - Packaging
|
Untitled
Abstract: No abstract text available
Text: New Product SiB412DK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 9a 0.040 at VGS = 2.5 V 9a 0.054 at VGS = 1.8 V a 9 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
|
Original
|
PDF
|
SiB412DK
SC-75
SC-75-6L-Single
SiB412DK-T1-GE3
11-Mar-11
|
|
|
Untitled
Abstract: No abstract text available
Text: New Product SiB413DK Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, f 0.075 at VGS = - 4.5 V -9 0.143 at VGS = - 2.5 V - 7.8 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
|
Original
|
PDF
|
SiB413DK
SC-75
SC-75-6L-Single
SiB413DK-T1-GE3
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: New Product SiB415DK Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, f RDS(on) (Ω) - 30 0.087 at VGS = - 10 V -9 0.158 at VGS = - 4.5 V - 7.2 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
|
Original
|
PDF
|
SiB415DK
SC-75
SC-75-6L-Single
SiB415DK-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
SC-75
Abstract: SiB417DK
Text: New Product SiB417DK Vishay Siliconix P-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.052 at VGS = - 4.5 V - 9a 0.070 at VGS = - 2.5 V - 9a 0.093 at VGS = - 1.8 V -9 a 0.130 at VGS = - 1.5 V - 8.2 0.222 at VGS = - 1.2 V
|
Original
|
PDF
|
SiB417DK
SC-75
SC-75-6L-Single
08-Apr-05
|
Untitled
Abstract: No abstract text available
Text: SFC Vishay Electro-Films CHIP RESISTORS Thin Film 0202 Size Resistor on Alumina FEATURES • Wire bondable • Small size: 0.020 inches square Product may not be to scale • Resistance range: 10 Ω to 10 kΩ • Alumina substrate The SFC series resistor chips offer a combination of low
|
Original
|
PDF
|
MIL-STD-883.
18-Jul-08
|
Untitled
Abstract: No abstract text available
Text: 4 TH IS DRAWING IS U N P U B L IS H E D . COPYRIGHT 2 A RELEASED BY A C O ELECTRONICS CORPORATION. FOR ALL PUBLICATION RIGHTS R E S ER V ED . REVIS IO N S - - E P LTR E D E S C R IP TIO N DATE 10MAR08 E C R —0 8 —0 0 3 4 4 9 NOTES D A 100 TRAY PACK IN ACCORDANCE WITH AMP SPEC 107- 3275
|
OCR Scan
|
PDF
|
10MAR08
28SEP04
|
Untitled
Abstract: No abstract text available
Text: 6 7 TH IS DRAWING IS U N P U B LIS H E D . RELEASED FOR ALL COPYRIGHT - 5 4 2 3 PUBLICATION RIGHTS LOC FT RESERVED. BY TYCO ELECTRONICS CORPORATION. R E VIS IO N S D IS T LTR D E SC RIPTIO N Z1 DATE DWN HMR GS 10MAR08 REVISED PER E C O -O 8 -O O 6 OO8 APVD
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: NOTES: 1. MATERIALS AND FINISHES: BODY - BRASS, NICKEL PLATING CONTACT - BRASS,SILVER PLATING INSULATOR - PTFE ELECTRICAL: A. IMPEDANCE: 50 OHM B. FREQUENCY RANGE: DC 0 - 4 GHz C. DIELECTRIC WITHSTANDING VOLTAGE: 1500 VRMS, MIN. MECHANICAL: A. DURABILITY:
|
OCR Scan
|
PDF
|
Jan--10
|
276-1751
Abstract: 2-174357-2
Text: THIS DRAWING IS UNPUBLISHED. . COPYRIGHT R E l& S B BY TYCO ELECTRONICS CORPORATION. - F6 R P u S l i ì a U ò n LOC ALL RIGHTS RESERVED. J TOLERANCE UNLESS OTHERWISE SPECIFIED: 0«x< 10 10-x£ 30 3 0 < x < 10 0 ANGLE ; REVISIONS D IS T LTR DESCRIPTION
|
OCR Scan
|
PDF
|
174B59,
09FEB04
09FEB04
31MAR2000
276-1751
2-174357-2
|
Untitled
Abstract: No abstract text available
Text: NOTES: 1. MATERIALS AND FINISHES PLATING THICKNESS IN MICRO-INCHES : BODY - BRASS, NICKEL PLATING CONTACT - BRASS, SILVER PLATING INSULATOR - COPOLYMER OF STYRENE 2 . ELECTRICAL: A. IMPEDANCE: 50 OHM B. FREQUENCY RANGE: DC 0 - 4 GHz C. DIELECTRIC WITHSTANDING VOLTAGE:
|
OCR Scan
|
PDF
|
RD-DM11120601
10-Mar-08
07-Jan-10
26-Dec-11
5/8-24UNEF-2A
-255/U"
12-Dec-11
24-Dec-09
\DWG\CNPD\2900-USZ
|
Amphenol 28000
Abstract: Amphenol HV
Text: R E VIS IO N S THIRD ANGLE PROJ. NOTES: 1. MATERIALS AND FINISHES PLATING THICKNESS IN MICRO-INCHES : BODY - BRASS, NICKEL PLATING CONTACT - BRASS, SILVER PLATING INSULATOR - PTFE 2 . ELECTRICAL: A. IMPEDANCE: 5 0 OHM B. FREQUENCY RANGE: DC 0 - 4 GHz C. DIELECTRIC WITHSTANDING VOLTAGE:
|
OCR Scan
|
PDF
|
10-Mar-08
23-Dec-09
19-Dec-11
12-Dec-11
RG59/U
932/U
\DWG\CNPD\28000-AASZ
Amphenol 28000
Amphenol HV
|