J237

Abstract: VNK10N06 AUTOPROTECTED POWER MOSFET 3.2 zener diode OF SGS-THOMSON
Contextual Info: £ÿj SCS-THOMSON lœ iILIC TK O K liei V N K 10N06 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET ADVANCE DATA TYPE VN K 10N 06 . . . . . . . . . Vclamp RDS on llim 60 V 0 .15 £2 10 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION

VNB10N07-VNK10N07FM-VNP10N07F1-VNV10N07

Abstract: 10n07 VNP10N
Contextual Info: ¿5 7 TY P E 10N07 10N07FM VNP10N 07FI 10N07 S G S -T H O M S O N VN B 10N07/K 10N07FM :LICTIB@10 i VN 10N07FI/VN 10N07 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET RDS on Vciamp 70 70 70 70 V V V V 0.1 n 0.1 n 0.1 n 0.1 a lllm 10 10 10 10

Contextual Info: •mis DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY AMP INCORPORATED. COPYRIGHT 19 ^ ,19 LOC DIST CE RIGHTS RESERVED. REVISIONS 16 LTR R DESCRIPTION DATE REVISE PER OAOO—0 6 7 3 —98 APVD 10N0V98 CK MK D 1. D IM E N S IO N S 2. PC P O L IS H .

Contextual Info: Green Product SDP F 10N06 S a mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) ( Ω) Typ 600V 10A 0.68 @ VGS=10V Rugged and reliable.

Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. AD DIST REVISIONS 00 LTR DATE DWN APVD 10N0V04 JR JO DESCRIPTION REV PER 0G3C—0452—04 0.51 [.020 ] D TYP STANDOFFS SEE FOR

bkd b1

Contextual Info: THIS DRAWING AND DESIGN HEREON CON­ S T I T U T E S A PR OPR IETAR Y DESIGN OF PACKARD E L E C T R I C DIVISION AND IS NOT TQ B E D U P LIC ATED OR REPRODUCED WITH­ OUT AUTHORITY O F PACKARD E L E C T R I C DIVISION. D ATE SYM 01AP93 11N093 10N095 28AU97

ST0L76

Contextual Info: DRAWING No, REV 12147590 SHEET REVISION RECORD L/O 10N095 D E SE NH O AD OT AD O PELA DELPHI-P. A 08JA98 A L TERACAO DE MATERIAL. 1 OF 1 ZL DATE OR CK APPR RC AK E^S /^Ud" 1 Feld Index Lfd Nr. Zone Indexnumber Datum Änderung / Revision Geprüft Name Checked

Contextual Info: according to DIN 43 652 CECC 75 301 - 801; EN 175 301 - 801 Metrisches Gewinde Metrical thread Maßzeichnung Drawing M 1 Kabelabgang single side entry 20 20 20 C146 10N025 501 2 25 25 25 C146 10N025 500 2 20 20 20 C146 10N025 807 2 25 25 25 C146 10N025 806 2

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ,19 LOC CE 16 ALL RIGHTS RESERVED. REVISIONS DIST LTR c DESCRIPTION REVISE PER 0AÛ0-Û674-98 DATE DUN APVD 10N0V98 CK MK D D 1. 1=5 dB MAX INSERTION LOSS. c C EL m mmmrn

60W-1C10N0

Abstract: 60W-1C30N0 60W-1C20N0
Contextual Info: SPECIFICATIONS Model Number TYPE 60W-1C 10N0 Parameters Test Conditions Units 60W-10N0 60W-1C20N0 60W-1C30N0 Coil Specs ± 10% at 20° C VDC 5.0 12.0 24.0 15° C to 35° C VDC 5.5 13.2 26.4 15° C to 35° C W 130 400 1350 Coil Resistance VDC 4.0 9.6 19.2

Contextual Info: SPECIFICATIONS Model Number TYPE 60W-2C 10N0 Parameters Test Conditions Units 60W-10N0 60W-2C20N0 60W-2C30N0 Coil Specs ± 10% at 20° C VDC 5.0 12.0 24.0 15° C to 35° C VDC 5.5 13.2 26.4 15° C to 35° C W 55 370 1370 Coil Resistance VDC 4.0 9.6 19.2

10N06

Abstract: D10N06 diode gc6
Contextual Info: S G S -T H O M Î 7 S O N V N D 1 0 N 0 6 /V N D 1 0 N 0 6 -1 ilL Ifê T O O T O iS S V N P 1 0 N 0 6 F I / K 1 0 N 0 6 F M ’’OMNIFET’: FULLY AUTOPROTECTED POWER MOSFET TY P E VN D 10N06 10N06-1 VN P 10N 06FI VNK 10N06FM . . . • . . . . . Vclamp

Contextual Info: THIS DRAWING AND DESIGN HEREON CON­ S T I T U T E S A P R O PR IETAR Y DESIGN OF PACKARD E L E C T R I C DIVISION AND IS NOT TO B E D U P LIC A TED OR REPRODUCED WITH­ OUT AUTHORITY OF PACKARD E L E C T R I C DIVISION. DO NOT S C A L E D A TE SYM 10N088

Contextual Info: according to DIN EN 175 301 - 801 DIN 43 652 Metrisches Gewinde Metrical thread Maßzeichnung Drawing M 1 Kabelabgang single side entry 20 20 20 C146 10N015 501 2 25 25 25 C146 10N015 500 2 20 20 20 C146 10N015 807 2 25 25 25 C146 10N015 806 2 Bestell Nr. / Part No.

Contextual Info: 1SS417CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT High Speed Switching Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 200

RM1206 vishay

Abstract: RCWPM
Contextual Info: RCWPM, RCWM, RCM Vishay Dale Thick Film Chip Resistors, Military/Established Reliability MIL-PRF-55342/2/3/4/5/6/7/8/9/10 Qualified, Type RM FEATURES • Allows wide design flexibility for use with hybrid circuitry • Meets requirements of MIL-PRF-55342 • Established reliability - Verified failure rate

RCWPM Jumper (Military M32159)

Contextual Info: RCWPM Military M/D55342 www.vishay.com Vishay Dale Thick Film Chip Resistors, Military/Established Reliability MIL-PRF-55342 Qualified, Type RM FEATURES MECHANICAL SPECIFICATIONS Resistive element Encapsulation Substrate Termination Solder finish Ruthenium oxide

Contextual Info: MOTOROLA O rder this docum ent by M M 10N02Z/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M SF10N 02Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel w ith M onolithic Zener ESD Protected G ate EZFETs™ are an advanced series of power MOSFETs which

2N5417

Abstract: A 14U UD3008 2N5292 BD263 BD264A CI44 transistor t05 BC412 KIS434
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

X55a

Abstract: 2sc283 PET8004 BF123 MT1060 310M GW 9n BFW74 2N744 POWER DISS BFW76
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

MA3232

Abstract: BF123 CA3036 FT4017 2n1613 replacement A431 BF121 BVEBO-15V DIODE SJ 98 DM01B
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2N1103

Abstract: 2SC167 2SC166 CK26A CI44 BC412 KIS434 NS435 NS436 NS438
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

TLO 61

Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2S711

Abstract: NS437 A1380 transistor CI44 MM1758 T05 Package transistor t05 TZ7003 BC412 KIS434
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,