10QMHZ Search Results

Contextual Info: 1. Mechanical Dimensions: 2. S c h e m a t i c : o5.5T o- 3. Electrical Specifications: @25°C Inductance: D.20uH Nominal 100M H z, 0.1V Q: 110 Min @10QMHz 0.1V Top view Tuning C apacitance Range: 13.0p F±8 % 100MHz 0 . IV 1. SolderabilHy: Leads shall meet MIL—STD—202G,

GR10

Contextual Info: S c h e m a tic : '1 r' .j Isolation Voltage: 1500 Vrms INPUT to OUTPUT UTP SIDE OCL: 35DuH Min @100KHz 100mV 8mADC Rise T im e ( 1 0 —9 0% ): In s e rtio n 2 .5 n s Typical Loss (1 DQKHz—10QMHz): —1 .1d B M a x im u m Insertion Loss (1 00MHz—125MHz): —1.5dB Maximum

Contextual Info: P FORWARD INTERNATIONAL ELECTRONICS LTD. MPSA55 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR AM PLIFIER TRANSISTOR Package: TO-92 * High Collector-Emitter Voltage Voeo=-60V * Collector Dissipation PC=625 mW Ta=25T: ABSOLUTE MAXIMUM RATINGS at TamtH25*C

XF200

Contextual Info: I. 2 . S ch e m atic: D im e n s i o n s : A 1 .0 0 0 Max _ 2 5 .4 0 Max Transmit Seven Pole Filter Utp Side x z> XFMRS YYWW X ö □ O o> o t o a> C> CT> XF2006CE1 0.01 8 0 .4 6 E 0 .7 0 0 1 7 .7 8 - ^ DO ^ o m 2 S o in ^ CM F 0.100 2 .5 4 R eceive Five Pole

150D

Abstract: XFGIB100B
Contextual Info: S c h e m a t i c : o ne o f fo u r l~~ 1 ICTrlCT J ISOLATION: 150D Vrms TURNS RATIOl (PRI/SEC 1CT:1 CT ±2% OCL: 350uH MIN @100KHz 100mV SmADC Rise Time: 1.75 hb Max. INSERTION LOSS:. -1.0dB MAX OIMHz-1 OQMHz -1.5dB MAX &10D—125MHz RETURN LOSS: -1SdB Min &1-30MHz

Contextual Info: I . D im e n s i o n s : 2 A 1.000 Max _ 2 5.4 0 Max . S ch e m atic: Transmit Seven Pole Filter Utp Side x X z> XFMRS ö YYWW □ O o> o t o a> C> CT> XF2006CE 0.01 8 0 .4 6 E 0 .700 17.78 ^ DO ^ o m2 S o ^ in CM F - Receive 0.100 3. E l e c t r i c a l

Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TO BEL FUSE INC, AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC, ELECTR ICAL CHARACTERISTICS RoHS 2002/95/EC SCHEMATIC C 25"C TURNS RATIO TP1 TP2 TP3

I8 SOT23

Abstract: FMMT495 F10Q
Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR IS S U E 3 - N O V E M B E R 1995 P A R T M A R K IN G D E TA IL • FMMT495 O 495 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL Collector-Base Voltage Colleetor-Em itter Voltage VALUE U N IT

LKS 210

Abstract: BAOC
Contextual Info: HY57V56820HT 32Mx8-bit, 8K Ref., 4Bank$, 3.3V DESCRIPTION The HY 57V 56820H T is a 268,435,456 bit CM O S S ynchronous DRAM, ideally suited fo r the m ain m em ory applications which require la rge m em ory density and high bandw idth. H Y 57V 56820H T is organized as 4banks o f 8,388,608x8.

OHD 3- 80M

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low V oltage Low S kew CMOS PLL Clock Driver, 3 -S ta te M C88LV915T The MC88LV915T Clock Driver utilizes phase-locked loop technology to lock its low skew outputs' frequency and phase onto an input reference clock. It is designed to provide clock distribution for high performance

BA0A11

Abstract: 39S64800T-80 39S648Q0T-10 SMD MARKING CODE aO9
Contextual Info: HYB39S6440X/8ÖX/16xT 64MBit Synchronous DRAM SIEM ENS 64 MBit Synchronous DRAM Advanced Information • High Performance: • Multiple Burst Read with Operation Single Write -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns • Data Mask for Read / Write control x4, x8

TE85

Contextual Info: HYM76V8M655HG L T6 8Mx64, 4M x16 based, PC100 DESCRIPTION T h e H y n ix H Y M 7 1 V 6 M 6 5 5 H G (L )T 6 S e rie s a re 8 M x 6 4 b its S y n c h ro n o u s D R A M M o d u le s . T h e m o d u le s a re c o m p o s e d o f e ig h t 4 M x 1 6 b its C M O S S y n c h ro n o u s D R A M s in 4 0 0 m il 5 4 p in T S O P -II p a c k a g e , o n e 2 K b it E E P R O M in 8 p in T S S O P p a c k a g e o n a 1 6 8 p in

S5810

Contextual Info: Q Q u a l it y S e m ic o n d u c t o r , I n c . Low Skew Clock Driver/ Buffer for Mobile PC with 4 SO-DIMMS q s s s io advance in f o r m a t io n FEATURES/BENEFITS DESCRIPTION • 1 to 10 output buffer/driver • Tri-state pin for testing • l2C programming capability

RF POWER TRANSISTOR 100MHz

Abstract: BOX69477 high Power Amplifier 100mhz BF31
Contextual Info: BF 314 NPN HI GH frequency / SILICON « s » g s E K 5gsnäg»"-js 55 3 » SSS? j E s «rife«. ï PLANAR EPITAXIAL t r a n s is to r ?p SS5: •*«%« & *gx MECHANICAL OUTLINE DESCRIPTION ; GGENERAL ì The BF314 is a NENf silicon plana: epitaxial transistor designed for use