10USMINIMUM Search Results

10USMINIMUM Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
tme 126 Abstract: MGW12N120 IC9012 Bipolar WPC Text: MOTOROLA SEMICONDUCTOR = TECHNICAL DATA Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate MGW12N120 This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability.	Original	PDF	MGW12N120 O-247 10USminimum tme 126 MGW12N120 IC9012 Bipolar WPC

Catalog Datasheet

MFG & Type

PDF

Document Tags

tme 126

Abstract: MGW12N120 IC9012 Bipolar WPC
Text: MOTOROLA SEMICONDUCTOR = TECHNICAL DATA Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate MGW12N120 This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability.

Original

PDF

MGW12N120 O-247 10USminimum tme 126 MGW12N120 IC9012 Bipolar WPC