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    1106F Search Results

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    1106F Price and Stock

    TE Connectivity A9AAT-1106F

    FLEX CABLE - AFE11T/AF11/AFE11T
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey A9AAT-1106F Bulk 1,180 1
    • 1 $5.42
    • 10 $4.491
    • 100 $3.722
    • 1000 $3.08883
    • 10000 $2.87458
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    Dialight 5151106F

    LIGHT PIPE 3 ELEMENT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 5151106F Bulk 1,112 1
    • 1 $1.86
    • 10 $1.187
    • 100 $1.86
    • 1000 $0.66859
    • 10000 $0.57757
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    TTI 5151106F Bulk 1,125
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.571
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    Globetek Inc LL21106F0A00(R)

    CBL ASSY 2.5MM PLUG-CBL RND 6'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LL21106F0A00(R) Bulk 255 1
    • 1 $3.79
    • 10 $3.439
    • 100 $3.03
    • 1000 $2.19675
    • 10000 $2.04525
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    L-com Inc PPA00011-06F

    UNIVERSAL CPU POWER CORD - NEMA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PPA00011-06F Bag 10 1
    • 1 $30.43
    • 10 $23.492
    • 100 $18.4465
    • 1000 $15.78554
    • 10000 $15.78554
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    Newark PPA00011-06F Bulk 18 1
    • 1 $26.07
    • 10 $26.07
    • 100 $26.07
    • 1000 $26.07
    • 10000 $26.07
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    TE Connectivity A9BBA-1106F

    FLEX CABLE - AFF11A/AF11/AFF11A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey A9BBA-1106F Bulk 1
    • 1 $12.96
    • 10 $10.735
    • 100 $8.9018
    • 1000 $7.46322
    • 10000 $7.46322
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    1106F Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1106F Voltage Multipliers 600 V Single Phase Bridge Original PDF
    1106FA Voltage Multipliers 600 V single phase bridge 1.4-1.5 A forward current, 150 ns recovery time Original PDF
    1106FB Voltage Multipliers 600 V single phase bridge 1.4-1.5 A forward current, 150 ns recovery time Original PDF
    1106FB Voltage Multipliers Single Phase Bridge, 70nS, 150nS, 3000nS Recovery Scan PDF
    1106FC Voltage Multipliers 600 V single phase bridge 1.4-1.5 A forward current, 150 ns recovery time Original PDF
    1106FC Voltage Multipliers Single Phase Bridge, 70nS, 150nS, 3000nS Recovery Scan PDF
    1106FD Voltage Multipliers 600 V single phase bridge 1.4-1.5 A forward current, 150 ns recovery time Original PDF
    1106FD Voltage Multipliers Single Phase Bridge, 70nS, 150nS, 3000nS Recovery Scan PDF
    1106FE Voltage Multipliers 600 V single phase bridge 1.4-1.5 A forward current, 150 ns recovery time Original PDF
    1106FE Voltage Multipliers Single Phase Bridge, 70nS, 150nS, 3000nS Recovery Scan PDF
    1106FF Voltage Multipliers 600 V single phase bridge 1.4-1.5 A forward current, 150 ns recovery time Original PDF

    1106F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1106FA Diodes Single-Phase High-Speed Bridge Rectifier Military/High-RelN I O Max.(A) Output Current1.5 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time150n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1 V(FM) Max.(V) Forward Voltage1.3


    Original
    PDF 1106FA Voltage600 Time150n Current40u

    Untitled

    Abstract: No abstract text available
    Text: 1106F Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current1.5 @Temp (øC) (Test Condition)55 V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)1


    Original
    PDF 1106F Voltage600 Current40u

    Untitled

    Abstract: No abstract text available
    Text: 1106FC Diodes Single-Phase High-Speed Bridge Rectifier Military/High-RelN I O Max.(A) Output Current1.5 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time150n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1 V(FM) Max.(V) Forward Voltage1.3


    Original
    PDF 1106FC Voltage600 Time150n Current40u

    Untitled

    Abstract: No abstract text available
    Text: 1106FF Diodes Single-Phase High-Speed Bridge Rectifier Military/High-RelN I O Max.(A) Output Current1.5 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time150n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1 V(FM) Max.(V) Forward Voltage1.3


    Original
    PDF 1106FF Voltage600 Time150n Current40u

    Untitled

    Abstract: No abstract text available
    Text: 1106FE Diodes Single-Phase High-Speed Bridge Rectifier Military/High-RelN I O Max.(A) Output Current1.5 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time150n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1 V(FM) Max.(V) Forward Voltage1.3


    Original
    PDF 1106FE Voltage600 Time150n Current40u

    Untitled

    Abstract: No abstract text available
    Text: 1106FB Diodes Single-Phase High-Speed Bridge Rectifier Military/High-RelN I O Max.(A) Output Current1.5 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time150n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1 V(FM) Max.(V) Forward Voltage1.3


    Original
    PDF 1106FB Voltage600 Time150n Current40u

    Untitled

    Abstract: No abstract text available
    Text: 1106FD Diodes Single-Phase High-Speed Bridge Rectifier Military/High-RelN I O Max.(A) Output Current1.5 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time150n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1 V(FM) Max.(V) Forward Voltage1.3


    Original
    PDF 1106FD Voltage600 Time150n Current40u

    RN2101FT

    Abstract: RN1101FT RN1102FT RN1103FT RN1104FT RN1105FT RN1106FT RN2106FT
    Text: RN1101FT~1106FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1101FT, RN1102FT, RN1103FT RN1104FT, RN1105FT, 1106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm


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    PDF RN1101FT RN1106FT RN1101FT, RN1102FT, RN1103FT RN1104FT, RN1105FT, RN2101FT RN2106FT RN1102FT RN1103FT RN1104FT RN1105FT RN1106FT RN2106FT

    RN1104FV

    Abstract: RN2101FV RN1105FV RN1101FV RN1102FV RN1103FV RN1106FV RN2106FV
    Text: RN1101FV~1106FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1101FV, RN1102FV, RN1103FV RN1104FV, RN1105FV, 1106FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm Ultra-small package, suited to very high density mounting


    Original
    PDF RN1101FVRN1106FV RN1101FV, RN1102FV, RN1103FV RN1104FV, RN1105FV, RN1106FV RN2101FV RN2106FV RN1104FV RN1105FV RN1101FV RN1102FV RN1103FV RN1106FV RN2106FV

    1106T

    Abstract: 1113S 1113FR
    Text: COPAL ELECTRONICS 抵抗温度係数が優れた1回転型巻線トリマ 1回転型巻線トリマ SINGLE TURN WIREWOUND TRIMMERS λ-6/λ-13 RoHS 指令対応 RoHS compliant 内部構造図 INTERNAL STRUCTURE λ-13T 7 6 5 4 1 2 3 名 称 材 料


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    PDF UL-94HB 1113F) -13FR 1113FR) 1106T 1113S 1113FR

    RN1101FT

    Abstract: RN1102FT RN1103FT RN1104FT RN1105FT RN1106FT RN2101FT RN2106FT
    Text: RN1101FT~1106FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1101FT, RN1102FT, RN1103FT RN1104FT, RN1105FT, 1106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm


    Original
    PDF RN1101FT RN1106FT RN1101FT, RN1102FT, RN1103FT RN1104FT, RN1105FT, RN2101FT RN2106FT RN1102FT RN1103FT RN1104FT RN1105FT RN1106FT RN2106FT

    Untitled

    Abstract: No abstract text available
    Text: RN1101FT~1106FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1101FT, RN1102FT, RN1103FT RN1104FT, RN1105FT, 1106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm


    Original
    PDF RN1101FT RN1106FT RN1101FT, RN1102FT, RN1103FT RN1104FT, RN1105FT, RN2101FT 2106FT

    Untitled

    Abstract: No abstract text available
    Text: RN2101FT~RN2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FT,RN2102FT,RN2103FT RN2104FT,RN2105FT,RN2106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm


    Original
    PDF RN2101FT RN2106FT RN2102FT RN2103FT RN2104FT RN2105FT RN1101FT 1106FT

    1100e

    Abstract: 1102E 1102FE 1102UFE 1106E 1106FE 1106UFE 1110E 1110FE 1110UFE
    Text: 200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time 1102E - 1110E 1102FE - 1110FE 1102UFE - 1110UFE ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Vrwm Average Rectified Current


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    PDF 1102E 1110E 1102FE 1110FE 1102UFE 1110UFE 1102E 1106E 1102FE 1100e 1106E 1106FE 1106UFE 1110E 1110FE 1110UFE

    RN1101FT

    Abstract: RN2101FT RN2102FT RN2103FT RN2104FT RN2105FT RN2106FT
    Text: RN2101FT~RN2106FT 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2101FT, RN2102FT, RN2103FT RN2104FT, RN2105FT, RN2106FT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用


    Original
    PDF RN2101FT RN2106FT RN2101FT, RN2102FT, RN2103FT RN2104FT, RN2105FT, RN1101FT 1106FT RN2102FT RN2103FT RN2104FT RN2105FT RN2106FT

    AD6M

    Abstract: DSN16 "5ESS"
    Text: AT&T Product Specification Sheet Microelectronics 1106F Initial Us« 5ESS/SM2000 0SN16 Description 144 The 1106F DSN 16 provides the interconnection network and control for intercommunications between an array of DSPs and provides access to a common shared memory. The


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    PDF 5ESS/SM2000 1106F 0SN16 1106F DSN16 164-pln SI01S AD6M "5ESS"

    Untitled

    Abstract: No abstract text available
    Text: 1102A 1104A 1106A 1108A 1110A SINGLE PHASE BRIDGE 70nS*150nS*3000nS RECOVERY V rwM = IE = 1102FA 1104FA 1106FA 1108FA 1110FA 1102UFA 1104UFA 1106UFA 1108UFA 1110UFA Assemblies available with JAN, JANTX, or JA N TXV discrete diodes. Consult sales office. 2 0 0 -1 0 0 0 V


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    PDF 150nS 3000nS 1102FA 1104FA 1106FA 1108FA 1110FA 1102UFA 1104UFA 1106UFA

    1102F

    Abstract: 1102FF 1102UFF 1104F 1104FF 1104UFF 1106F 1106FF 1106UFF 1108F
    Text: b3E 5 • ^514054 □ □ □ □ 4 C]D hQ2 ■ V f l l 1102F 1104F 1106F 1108F 1110F SINGLE PHASE BRIDGE 70nS*150nS«3000nS RECOVERY V RWm IF 1102FF 1104FF 1106FF 1108FF 1110FF 1102UFF 1104UFF 1106UFF 1108UFF 1110UFF AC = 2 00 -1000V = 1.4 - 1.5A Assemblies available with


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    PDF 150nS 3000nS 1102F 1102FF 1102UFF 1104F 1104FF 1104UFF 1106F 1106FF 1102UFF 1104UFF 1106UFF 1108F

    1108b

    Abstract: ac 187 pin configuration 1102B 1102FB 1102UFB 1104B 1104FB 1106B 1106FB 1108FB
    Text: b3E ]> •ìSmfiS4 GGGOMflfl TS4 SINGLE PHASE BRIDGE 70nS*150nS*3000nS RECOVERY « V i l i 1102B 1104B 1106B 1108B 1110B 1102FB 1104FB 1106FB 1108FB 1110FB 1102UFB 1104UFB 1106UFB 1108UFB 1110UFB AC VpwM = 200-1000V lF = 1.4-1.5A * Assemblies available with


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    PDF 150nS 3000nS 1102B 1104B 1106B 1108B 1110B 1102FB 1104FB 1106FB ac 187 pin configuration 1102UFB 1108FB

    1102FA

    Abstract: 1102UFA 1104FA 1104UFA 1106FA 1106UFA 1108FA 1108UFA 1110FA 1110UFA
    Text: tiBE D • ^ 5 1 4 0 5 4 Q G G G M Û b lôl ■■ V H I 1102A 1104A 1106A 1108A 1110A SINGLE PHASE BRIDGE 70nS»150nS*3000nS RECOVERY V RWM D„„. IF = = 2 0 0 -1000V 1.4 - 1.5A 1102FA 1104FA 1106FA 1108FA 1110FA 1102UFA 1104UFA 1106UFA 1108UFA 1110UFA


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    PDF 150nS 3000nS 1102FA 1104FA 1106FA 1108FA 1110FA 1102UFA 1104UFA 1106UFA 1108UFA 1110FA 1110UFA

    Untitled

    Abstract: No abstract text available
    Text: SINGLE PHASE BRIDGE 70nS*150nS*3000nS RECOVERY 1102UFF 1104UFF 1106UFF 1108UFF 1110UFF 1102FF 1104FF 1106FF 1108FF 1110FF 1102F 1104F 1106F 1108F 1110F AC V rwm = 2 0 0 -1 0 0 0 V I = 1.4-1.5A Assemblies available with JAN, JANTX, or JAN TXV discrete diodes. Consult


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    PDF 150nS 3000nS 1102F 1104F 1106F 1108F 1110F 1102FF 1104FF 1106FF

    ac 187 pin configuration

    Abstract: No abstract text available
    Text: SINGLE PHASE BRIDGE 70nS*150nS*3000nS RECOVERY 1102B 1104B 1106B 1108B 1110B 1102FB 1104FB 1106FB 1108FB 1110FB 1102UFB 1104UFB 1106UFB 1108UFB 1110UFB AC V RWM = 2 0 0 - 1000V = I 1.4-1.5A Assemblies available with JAN, JANTX, or JA N TXV discrete diodes. Consult


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    PDF 150nS 3000nS 1102B 1104B 1106B 1108B 1110B 1102FB 1104FB 1106FB ac 187 pin configuration

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA R N 1 101 F ~ R N 1 1 0 6 F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1101F, RN1102F, RN1103F RN1104F, RN1105F, 1106F SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors


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    PDF RN1101F, RN1102F, RN1103F RN1104F, RN1105F, RN1106F RN2101F RN2106F RN1101F RN1102F

    ac 187 pin configuration

    Abstract: LD 1106 AS
    Text: SINGLE PHASE FULL WAVE BRIDGES 70ns-3000ns Recovery • 1-4A - 3.0A ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number 2 Working Reverse Voltage Average Rectified Current @TC (to) (Vrwm) Forward Voltage (lr) (Vf) 100°C 25°C 55°C Volts Reverse


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    PDF 70ns-3000ns 1102F 1106F 1102UF 1106UF 1110UF 1202F 1206F 1202UF 1206UF ac 187 pin configuration LD 1106 AS