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    110N10P Search Results

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    110N10P Price and Stock

    Littelfuse Inc IXTQ110N10P

    MOSFET N-CH 100V 110A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTQ110N10P Tube 300 1
    • 1 $7.21
    • 10 $7.21
    • 100 $4.44267
    • 1000 $3.64775
    • 10000 $3.64775
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    Newark IXTQ110N10P Bulk 300
    • 1 -
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    • 100 $5.2
    • 1000 $4.18
    • 10000 $3.89
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    Littelfuse Inc IXFH110N10P

    MOSFET N-CH 100V 110A TO247AD
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    DigiKey IXFH110N10P Tube 70 1
    • 1 $8.83
    • 10 $8.83
    • 100 $5.17167
    • 1000 $3.90851
    • 10000 $3.90851
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    Newark IXFH110N10P Bulk 300
    • 1 -
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    • 1000 $5.38
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    RS IXFH110N10P Bulk 8 Weeks 30
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    • 100 $6.05
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    IXYS Corporation IXFC110N10P

    MOSFET N-CH 100V 60A ISOPLUS220
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    DigiKey IXFC110N10P Box 50
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    • 100 $3.7828
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    Littelfuse Inc IXTT110N10P

    MOSFET N-CH 100V 110A TO268
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    DigiKey IXTT110N10P Tube 300
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    Newark IXTT110N10P Bulk 300
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    • 1000 $5.05
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    IXYS Corporation IXFH110N10P

    MOSFETs 110 Amps 100V 0.015 Rds
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    Mouser Electronics IXFH110N10P 4,133
    • 1 $8.17
    • 10 $7.41
    • 100 $5.17
    • 1000 $4.73
    • 10000 $4.69
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    Bristol Electronics IXFH110N10P 8
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    TTI IXFH110N10P Tube 300
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    • 1000 $5.15
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    TME IXFH110N10P 300 1
    • 1 $6.64
    • 10 $5.51
    • 100 $5.14
    • 1000 $4.26
    • 10000 $4.17
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    110N10P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXFH110N10P

    Abstract: 110N10P
    Text: PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 110N10P IXFV 110N10P IXFV 110N10PS VDSS ID25 RDS on Preliminary Data Sheet TO-247 (IXFH) Symbol Test Conditions VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		110N10P 110N10PS O-247 10oulombs IXFH110N10P IXFH110N10P 110N10P PDF

    IXFV110N10P

    Abstract: PLUS220SMD 110N10P IXFH110N10P
    Text: PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 110N10P IXFV 110N10P IXFV 110N10PS VDSS = 100 V ID25 = 110 A Ω RDS on ≤ 15 mΩ ≤ 150 ns trr Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 175° C


    Original     		110N10P 110N10PS 110N10P IXFV110N10P IXFV110N10P PLUS220SMD IXFH110N10P PDF

    110N10P

    Abstract: No abstract text available
    Text: Advance Technical Information IXTQ 110N10P IXTT 110N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = 100 = 110 = 15 V A Ω mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		110N10P O-268 405B2 110N10P PDF

    Untitled

    Abstract: No abstract text available
    Text: IXTQ 110N10P IXTT 110N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = 100 = 110 ≤ 15 V A Ω mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100 V V VGS VGSM


    Original     		110N10P O-268 PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated VDSS = 100 V ID25 = 110 A Ω RDS on ≤ 15 mΩ ≤ 150 ns trr IXFH 110N10P IXFV 110N10P IXFV 110N10PS Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 175° C


    Original     		110N10P 110N10PS 110N10P IXFV110N10P PDF

    110N10P

    Abstract: No abstract text available
    Text: PolarHTTM HiPerFET Power MOSFET IXFC 110N10P VDSS ID25 RDS on N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated = 100 V = 66 A Ω = 17 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		110N10P 110N10P PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM IXFC 110N10P VDSS = 100 V ID25 = 60 A RDS on ≤ 17 m Ω ≤ 150 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings


    Original     		ISOPLUS220TM 110N10P 5-05-A PDF

    110N10P

    Abstract: 110n10
    Text: IXTQ 110N10P IXTT 110N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = 100 = 110 ≤ 15 V A Ω mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100 V V VGS VGSM


    Original     		110N10P 110N10P 110n10 PDF

    110N10P

    Abstract: 110n10
    Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM IXFC 110N10P VDSS = 100 V ID25 = 60 A RDS on ≤ 17 m Ω ≤ 150 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings


    Original     		ISOPLUS220TM 110N10P 5-05-A 110N10P 110n10 PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p PDF

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


    Original     		110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP PDF