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    110MJ Search Results

    110MJ Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    R5F110MJAFB#30 Renesas Electronics Corporation High-function LCD Microcontrollers with USB 2.0/Rapid Charging Support for Sensor Modules and Healthcare Devices Visit Renesas Electronics Corporation
    R5F110MJGFB#30 Renesas Electronics Corporation High-function LCD Microcontrollers with USB 2.0/Rapid Charging Support for Sensor Modules and Healthcare Devices Visit Renesas Electronics Corporation
    R5F110MJGFB#50 Renesas Electronics Corporation High-function LCD Microcontrollers with USB 2.0/Rapid Charging Support for Sensor Modules and Healthcare Devices Visit Renesas Electronics Corporation
    R5F110MJAFB#50 Renesas Electronics Corporation High-function LCD Microcontrollers with USB 2.0/Rapid Charging Support for Sensor Modules and Healthcare Devices Visit Renesas Electronics Corporation
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    110MJ Price and Stock

    Renesas Electronics Corporation R5F110MJGFB-30

    IC MCU 16BIT 256KB FLASH 80LQFP
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    DigiKey R5F110MJGFB-30 Tray 595 1
    • 1 $3.21
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    • 100 $3.21
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    Renesas Electronics Corporation R5F110MJAFB-30

    IC MCU 16BIT 256KB FLASH 80LQFP
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    DigiKey R5F110MJAFB-30 Tray 442 1
    • 1 $4.28
    • 10 $3.24
    • 100 $4.28
    • 1000 $2.56697
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    Rochester Electronics LLC HFA1110MJ-883

    750MHZ, LOW DISTORTION UNITY GAI
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    DigiKey HFA1110MJ-883 Bulk 9
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    Renesas Electronics Corporation R5F110MJGFB-50

    IC MCU 16BIT 256KB FLASH 80LQFP
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    DigiKey R5F110MJGFB-50 Reel 1,000
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    • 1000 $2.60233
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    Renesas Electronics Corporation R5F110MJAFB-10

    IC MCU 16BIT 256KB FLASH 80LQFP
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    DigiKey R5F110MJAFB-10 Tray 952
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    110MJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    110mJ

    Abstract: IRFE024
    Text: IRFE024 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 VDSS ID(cont) RDS(on) 60V


    Original     		PDF IRFE024 00A/ms 300ms, 110mJ IRFE024

    7636 mosfet

    Abstract: transistor mj 4035 BTS5235G GPS05094 PG-DSO-20-43 bts52
    Text: T a r g et D a t a S h e et , V 1 . 2 , A u g 20 0 6 BTS 5235-2G Smart High-Side Power Switch PROFET Tw o C ha nn el s , 60 m Ω Automotive Power Smart High-Side Power Switch BTS 5235-2G Table of Contents Page 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5


    Original     		PDF 5235-2G 7636 mosfet transistor mj 4035 BTS5235G GPS05094 PG-DSO-20-43 bts52

    Untitled

    Abstract: No abstract text available
    Text: IRFE024 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 VDSS ID(cont) RDS(on) 60V


    Original     		PDF IRFE024 300ms,

    2SK2563

    Abstract: F4F60VX2 600V,4A DIODE
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2563 F4F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 600V4A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


    Original     		PDF 2SK2563 F4F60VX2) FTO-220 600V4A 00-200V 110mJ 2SK2563 F4F60VX2 600V,4A DIODE

    BTS5235-2G

    Abstract: PG-DSO-20-43
    Text: Data Sheet, Rev.1.0, June 2007 BTS5235-2G Smart High-Side Power Switch Automotive Power Smart High-Side Power Switch BTS5235-2G Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF BTS5235-2G BTS5235-2G PG-DSO-20-43

    5MIO

    Abstract: 200mj AN4177 MC10XS3535 10XS3535 AECQ100 Monopulse 110mJ
    Text: Freescale Semiconductor Application Note AN4177 Rev. 1.0, 7/2010 Repetitive Clamped Inductive Energy Capability for the MC10XS3535 By: Laurent Guillot 1 Introduction This document describes the functioning of the 10XS3535 smart power switch when switching inductive loads with no


    Original     		PDF AN4177 MC10XS3535) 10XS3535 10XS3535 16-bit 5MIO 200mj AN4177 MC10XS3535 AECQ100 Monopulse 110mJ

    BTS5235-2G

    Abstract: bts5235 transistor mj 4035 BTS5235L GPS05094 PG-DSO-20-43
    Text: Data Sheet, Rev.1.1, Sep 2008 BTS5235-2G Smart High-Side Power Switch Automotive Power Smart High-Side Power Switch BTS5235-2G Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF BTS5235-2G BTS5235-2G bts5235 transistor mj 4035 BTS5235L GPS05094 PG-DSO-20-43

    600V,4A DIODE

    Abstract: 2SK2563 600V4A F4F60VX2 2a 400v mosfet
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2563 F4F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 600V4A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.


    Original     		PDF 2SK2563 F4F60VX2) FTO-220 600V4A 00-200V 110mJ 600V,4A DIODE 2SK2563 600V4A F4F60VX2 2a 400v mosfet

    513 scr

    Abstract: No abstract text available
    Text: Data Sheet, Rev.1.0, June 2007 BTS5235-2L Smart High-Side Power Switch Automotive Power Smart High-Side Power Switch BTS5235-2L Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF BTS5235-2L 513 scr

    Untitled

    Abstract: No abstract text available
    Text: NTE2984 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS on0 Specified at VGS = 4V & 5V D +175°C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements


    Original     		PDF NTE2984

    NTE2986

    Abstract: No abstract text available
    Text: NTE2986 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V D +175°C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements


    Original     		PDF NTE2986 NTE2986

    BTS 5235-2L

    Abstract: 5235-2L BTS5235L load dump pulse
    Text: T a r g et D a t a S h e et , V 1 . 2 , A u g 20 0 6 BTS 5235-2L Smart High-Side Power Switch PROFET Tw o C ha nn el s , 60 m Ω Automotive Power Smart High-Side Power Switch BTS 5235-2L Table of Contents Page 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5


    Original     		PDF 5235-2L BTS 5235-2L 5235-2L BTS5235L load dump pulse

    NTE2984

    Abstract: 110mJ
    Text: NTE2984 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V D +175°C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements


    Original     		PDF NTE2984 NTE2984 110mJ

    Untitled

    Abstract: No abstract text available
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2563 F4F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 600V4A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.


    Original     		PDF 2SK2563 F4F60VX2) 600V4A FTO-220 00-200V 110mJ

    Untitled

    Abstract: No abstract text available
    Text: Target Data Sheet, V1.3, Nov 2006 BTS 5235-2G Smart High-Side Power Switch PROFET T w o C h a n n e l s , 6 0 mΩ Automotive Power Smart High-Side Power Switch BTS 5235-2G Table of Contents Page 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5


    Original     		PDF 5235-2G 5235-2L

    Untitled

    Abstract: No abstract text available
    Text: Target Data Sheet, V1.3, Nov 2006 BTS 5235-2L Smart High-Side Power Switch PROFET T w o C h a n n e l s , 6 0 mΩ Automotive Power Smart High-Side Power Switch BTS 5235-2L Table of Contents Page 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5


    Original     		PDF 5235-2L

    Untitled

    Abstract: No abstract text available
    Text: Series PSM10 PRECISION SCIENTIFIC POWER SUPPLY MODULES FEATURES 10W output power V & I control V & I monitor Output inhibit High stability Positive or negative polarity models Short circuit & lashover protected RoHS Compliant to EU Directive 2002/95/EC marked LVD


    Original     		PDF PSM10 2002/95/EC PSM10 D-63322

    Untitled

    Abstract: No abstract text available
    Text: XX-XXXX, R e v O; 7/94 JVWÏXAJVX Low-Cost, 2-Channel, ± 14-Bit Serial ADCs The M A X 110/M A X 111 a n a lo g -to -d ig ita l converters ADCs use an on-chip auto-calibration technique to achieve 15-bit resolution plus overrange, with no exter­ nal com ponents. O p e ratin g su p p ly curre nt is only


    OCR Scan     		PDF 14-Bit 110/M 15-bit MAX110 00CH070