HS-26C31MS
Abstract: 26C31M HS1-26C31MSR HS26C31ms harris HS-26C31MS ER3401
Text: HS-26C31MS fü HARRIS S E M I C O N D U C T O R Radiation Hardened Quad Differential Line Driver December 1992 Features Pinouts • 1.2 Micron Radiation Hardened CMOS - Total Dose Up to 300K RAD Si - Dose Rate Upset > 1x10s RAD/Sec (20nS Pulse) HS1-26C31MSR 16 PIN CERAMIC DUAL-IN-LINE
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HS-26C31MS
HS1-26C31MSR
1x10s
RS-422
HS-26C31MS
10sA/cm2
110nmx100nm
26C31M
HS26C31ms
harris HS-26C31MS
ER3401
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Untitled
Abstract: No abstract text available
Text: HS-26CT31RH Semiconductor R a d ia tio n H a rd e n e d March 1995 Q u a d D ifferential L in e D river Pinouts Features • 1.2 Micron Radiation Hardened CMOS HS1-26CT31RH 16 LEAD CERAMIC SIDEBRAZE DIP CASE OUTLINE D2, CONFIGURATION C TOP VIEW - Total Dose Up to 300K RAD Si
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HS-26CT31RH
HS1-26CT31RH
RS-422
038mm)
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Untitled
Abstract: No abstract text available
Text: HS-26C32RH Semiconductor Radiation H ardened Q u ad Differential Line R e c e iv e r August 1995 Pinouts Features • 1.2 Micron Radiation Hardened CMOS HS1-26C32RH 16 LEAD CERAMIC SIDEBRAZE DIP MIL-STD-1835: CDIP2-T16 TOP VIEW - Total Dose Up to 300K RAD Si
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HS-26C32RH
HS1-26C32RH
MIL-STD-1835:
CDIP2-T16
RS-422
138mW
038mm)
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26C31
Abstract: Harris top marking
Text: HS-26C31RH Semiconductor Radiation Hardened Quad Differential Line Driver November 1995 Features Pinouts • 1.2 Micron Radiation Hardened CMOS 16 Lead Ceramic Dual-in-Line Metal Seal Package SBDIP Mil-Std-1835 CDIP2-T16 TOP VIEW - Total Dose Up to 300K RAD(Si)
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HS-26C31RH
Mil-Std-1835
CDIP2-T16
1x109
RS-422
05A/cm
110nmx100nm
26C31
Harris top marking
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Untitled
Abstract: No abstract text available
Text: HS-26CT32RH Semiconductor Radiation H ardened Q u ad Differential Line R e c e iv e r August 1995 Pinouts Features • 1.2 Micron Radiation Hardened CMOS HS1-26CT32RH 16 LEAD CERAMIC SIDEBRAZE DIP MIL-STD-1835: CDIP2-T16 TOP VIEW - Total Dose Up to 300K RAD Si
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OCR Scan
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PDF
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HS-26CT32RH
HS1-26CT32RH
MIL-STD-1835:
CDIP2-T16
RS-422
138mW
HS-26CT32RHm
038mm)
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