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    UT2321

    Abstract: UT2321G
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2321 Power MOSFET P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UT2321 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in


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    PDF UT2321 UT2321 1111UT2321L UT2321G UT2321-AE3-R UT2321L-AE3-R UT2321G-AE3-R QW-R502-249 UT2321G