111CNQ045A

Abstract: 111CNQ045ASL 111CNQ045ASM 40HFL40S02 IRFP460
Contextual Info: 111CNQ045A Vishay High Power Products Schottky Rectifier New Generation 3 D-61 Package, 2 x 55 A FEATURES 111CNQ045A Base common cathode • 175 °C TJ operation • Center tap module • Very low forward voltage drop 1 Anode 1 D-61-8 2 Common cathode 3 Anode

Contextual Info: HSM126S Silicon Schottky Barrier Diode for System Protection REJ03G0174-0400Z Previous: ADE-208-111C Rev.4.00 Jan.28.2004 Features • HSM126S which is connected in series configuration enable to protect electric systems from missoperation against external + and – surge.

Hitachi DSAUTAZ006

Contextual Info: HSM126S Silicon Schottky Barrier Diode for System Protection ADE-208-111C Z Rev. 3 May 1995 Features • HSM126S which is connected in series configuration enable to protect electric systems from missoperation against external + and – surge. • Low VF and low leakage current.

HSM126S

Contextual Info: HSM126S Silicon Schottky Barrier Diode for System Protection REJ03G0174-0400Z Previous: ADE-208-111C Rev.4.00 Jan.28.2004 Features • HSM126S which is connected in series configuration enable to protect electric systems from missoperation against external + and – surge.

Contextual Info: TE X AS INS TRUM E NTS - ADVANCE INFO R MAT ION Stellaris 111C4QR Microcontroller D ATA SHE E T D S -LM4F 111C4 Q R- 1 0 5 0 2 C o p yri g h t 2 0 07-2011 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2011 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments

Contextual Info: TE X AS INS TRUM E NTS - ADVANCE INFO R MAT ION Stellaris 111C4QR Microcontroller D ATA SHE E T D S -LM4F 111C4 Q R- 1 2 0 1 3 C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2012 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments

Contextual Info: TE X AS INS TRUM E NTS - ADVANCE INFO R MAT ION Stellaris 111C4QR Microcontroller D ATA SHE E T D S -LM4F 111C4 Q R- 1 2 0 1 3 C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2012 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments

clock ma 1042

Abstract: 0x000001b8
Contextual Info: TE X AS INS TRUM E NTS - ADVANCE INFO R MAT ION Stellaris 111C4QR Microcontroller D ATA SHE E T D S -LM4F 111C4 Q R- 1 3 2 0 0 . 2 5 3 5 S P M S 284D C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2012 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments

Contextual Info: VS-111CNQ045A PbF Series Vishay High Power Products Schottky Rectifier New Generation 3 D-61 Package, 2 x 55 A FEATURES VS-111CNQ045APbF Base common cathode • 175 °C TJ operation • Center tap module • Very low forward voltage drop 1 D-61-8 Anode 1 2

IRFP460 SWITCHING FREQUENCY

Contextual Info: Not for New Design - End of Life - Last Available Purchase Date is 31-August-2011 VS-111CNQ045A, VS-111CNQ045ASM, VS-111CNQ045ASL Vishay Semiconductors Schottky Rectifier New Generation 3 D-61 Package, 2 x 55 A FEATURES VS-111CNQ045A Base common cathode • 175 °C TJ operation

Contextual Info: HSM126S Silicon Schottky Barrier Diode for System Protection HITACHI ADE-208-111C Z Rev. 3 May. 1995 Features • HSM126S which is connected in series configuration enable to protect electric systems from missoperation against external + and - surge. •

111CNQ045A

Abstract: 111CNQ045ASL 111CNQ045ASM 40HFL40S02 PD-20
Contextual Info: Bulletin PD-20.758 rev. A 03/02 111CNQ045A SCHOTTKY RECTIFIER New GenIII D-61 Package 110 Amp Description/Features Major Ratings and Characteristics Characteristics 111CNQ045A Units IF AV Rectangular 110 A VRRM 45 V IFSM @ tp = 5 µs sine 4000 A VF 0.55 V

Contextual Info: HSM126S Silicon Schottky Barrier Diode for System Protection ADE-208-111C Z Rev. 3 May. 1995 Features • HSM126S which is connected in series configuration enable to protect electric systems from missoperation against external + and − surge. • Low VF and low leakage current.

Contextual Info: VS-111CNQ045A PbF Series Vishay High Power Products Schottky Rectifier New Generation 3 D-61 Package, 2 x 55 A FEATURES VS-111CNQ045APbF Base common cathode • 175 °C TJ operation • Center tap module • Very low forward voltage drop 1 D-61-8 Anode 1 2

Contextual Info: VS-111CNQ045A Series Vishay High Power Products Schottky Rectifier New Generation 3 D-61 Package, 2 x 55 A FEATURES VS-111CNQ045A Base common cathode • 175 °C TJ operation • Center tap module • Very low forward voltage drop 1 D-61-8 Anode 1 2 Common

Contextual Info: 3 : i File No. I7C7E—#111C0B-2E I SH EET 1 ~ / SPECIFICATIONS: Insulator : Polycarbonate,UL 94V— 2 Contact: Copper Alloy,Gold Plated 50u" 2.34 Max. 0.35 0.56±0.05 2 Prongs For Stranded Wire in o I I I I I I :] D 0.30 d -H ¡n d 0.50 +-00 .0 3 3 Prongs For Solid Wire

Contextual Info: Bulletin PD-20.758 rev. A 03/02 111CNQ045A SCHOTTKY RECTIFIER New GenIII D-61 Package 110 Amp Description/Features Major Ratings and Characteristics Characteristics 111CNQ045A Units IF AV Rectangular 110 A VRRM 45 V IFSM @ tp = 5 µs sine 4000 A VF 0.55 V

Hitachi DSA00773

Abstract: HSM126S SC-59A
Contextual Info: ADE-208-111C Z HSM126S Silicon Schottky Barrier Diode for System Protection Rev. 3 May. 1995 Features Pin Arrangement • HSM126S which is connected in series configuration enable to protect electric systems from miss-operation against external + and −

Contextual Info: VS-111CNQ045A PbF Series Vishay High Power Products Schottky Rectifier New Generation 3 D-61 Package, 2 x 55 A FEATURES VS-111CNQ045APbF Base common cathode • 175 °C TJ operation • Center tap module • Very low forward voltage drop 1 D-61-8 Anode 1 2

HSM126S

Abstract: SC-59A Hitachi DSA00358
Contextual Info: HSM126S Silicon Schottky Barrier Diode for System Protection ADE-208-111C Z Rev. 3 May 1995 Features • HSM126S which is connected in series configuration enable to protect electric systems from missoperation against external + and – surge. • Low VF and low leakage current.

Hitachi DSA002789

Contextual Info: HSM126S Silicon Schottky Barrier Diode for System Protection ADE-208-111C Z Rev. 3 Features • HSM126S which is connected in series configuration enable to protect electric systems from missoperation against external + and – surge. • Low VF and low leakage current.

SN74ALVC126

Contextual Info: SN74ALVC126 QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS S C E S 111C - JU LY 1997 - R EVISED FE BR U A R Y 1998 D, DGV, OR PW PACKAGE TOP VIEW E P IC (Enhanced-Performance Implanted CMOS) Submicron Process Package Options Include Plastic Small-Outline (D), Thin Very Small-Outline

Contextual Info: VS-111CNQ045A PbF Series Vishay High Power Products Schottky Rectifier New Generation 3 D-61 Package, 2 x 55 A FEATURES VS-111CNQ045APbF Base common cathode • 175 °C TJ operation • Center tap module • Very low forward voltage drop 1 D-61-8 Anode 1 2

Contextual Info: Crystal Oscillator (V C -) TCXO-111C2 » J * * M t * iM 8 * # / T C X O , VC-TCXO M ^ fi/F e a tu r e • 'M i , mm 7 °t - g • For Personal Cellular Phone. • Small size and Low Profile. • Because it is leadless type, automatic mounting is possible