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    1120 DIODE Search Results

    1120 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    1120 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Laser diode Fabry-Perot

    Abstract: laser diode lifetime TEM00 ridge waveguide semiconductor laser
    Text: 0.90 04.01.2008 page: 1 from 4 BAL DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER GaAs Semiconductor Laser Diode Fabry-Perot Laser RWE/RWL PRELIMINARY SPECIFICATION RW Laser EYP-RWL-1120-00050-1300-SOT02-0000 General Product Information Product Application 1120 nm Fabry-Perot Laser


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    PDF EYP-RWL-1120-00050-1300-SOT02-0000 Laser diode Fabry-Perot laser diode lifetime TEM00 ridge waveguide semiconductor laser

    Untitled

    Abstract: No abstract text available
    Text: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BRM-1120-NS INFRARED RECEIVER MODULE ● Description 1. The BRM-1120-NS is miniaturized infrared receiver ●Package Dimensions: for remote control and other applications requiring improved ambient light rejection. 2. The separate PIN diode and preamplifier IC are


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    PDF BRM-1120-NS BRM-1120-NS 1250pcs

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT CHANGE NOTICE Contact Date: Implementation Date: Alert Category: October 31, 2008 October 31, 2008 Analog Semiconductor Products DCS/PCN-1120 Alert Type: PCN #: New manufacturing location PCN #: 1120 TITLE New assembly manufacturing location for SOT23-6 Unisem


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    PDF DCS/PCN-1120 OT23-6 OT23-6 ZXSC400E6TA ZXSC410E6TA ZXSC420E6TA PCN-1120

    single phase inverter IGBT application schematic

    Abstract: grundfos up 15 50 grundfos IGBT DRIVER SCHEMATIC 3 PHASE 3 phase IGBT gate driver Grundfos up Grundfos ups IR2x38 IR2x14 3 phase inverter simulation diagram
    Text: Application Note AN-1120 Buffer Interface with Negative Gate Bias for Desat Protected HVICs used in High Power Applications By Marco Palma - International Rectifier Niels H. Petersen - Grundfos Table of Contents Page Introduction .2


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    PDF AN-1120 IR2x14 IR2x38 single phase inverter IGBT application schematic grundfos up 15 50 grundfos IGBT DRIVER SCHEMATIC 3 PHASE 3 phase IGBT gate driver Grundfos up Grundfos ups 3 phase inverter simulation diagram

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VRRM = 4500 IFAVM = 410 IFRMS = 650 IFSM = 16 VF0 = 2.5 rF = 4.1 VDClink = 2800 Fast Recovery Diode for GCT applications V A A kA V mΩ V 5SDF 05F4502 PRELIMINARY Doc. No. 5SYA 1120-01 July 98 Features • Patented free-floating silicon technology


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    PDF 05F4502 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information Schnelle beschaltungslose Diode D1031SH Fast Hard Drive Diode Key Parameters enndaten VRRM 4500 V IFAVM 1120 A TC=85 °C IFSM VT0 23000 A 3570A (TC=55°C) 1,78 V rT 0,968 mΩ RthJC 10 K/kW Clamping Force 27 … 45 kN


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    PDF D1031SH 50/60Hz 50/60Hz

    Untitled

    Abstract: No abstract text available
    Text: SKS 870F B6U 590 V16 Characteristics Symbol Conditions min. typ. max. Unit 870 A 635 950 A 560 1120 A 1600 V Electrical Data Id Tamb = 35°C no overload 150 % overload, 60s every 10 min. 200 % overload, 60s every 10 min. VCES SEMISTACK Diode Three-phase uncontrolled


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    PDF P16/200F

    HFA-0002

    Abstract: HFA2-0002-5 HFA2-0002-9 HFA3-0002-5 HFA3-0002-9 HFA7-0002-5 HFA7-0002-9 HFA9P0002-5 HFA9P0002-9
    Text: HFA-0002 Semiconductor September 1998 See CT ODUHFA1105 R P TE 1120, OLE OBS 100, HFA HFA1 Low Noise Wideband Operational Amplifier Features Description • Wide Gain Bandwidth Product . . . . . . . . . . . . . . . 1GHz The HFA-0002 is a very wideband, high slew rate, op amp,


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    PDF HFA-0002 HFA11 HFA-0002 05V/mV 100ns. HFA2-0002-5 HFA2-0002-9 HFA3-0002-5 HFA3-0002-9 HFA7-0002-5 HFA7-0002-9 HFA9P0002-5 HFA9P0002-9

    Untitled

    Abstract: No abstract text available
    Text: DO - 8 PSM/PSMR 100K IF AV = 100 A PSMF/PSMFR 100K VRRM = 100 - 1600 V Silicon Power Diode Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800


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    PDF 100/01K 100/02K 100/04K 100/06K 100/08K 100/10K 100/12K 100/14K 100/16K

    Untitled

    Abstract: No abstract text available
    Text: DO - 9 PSM/PSMR 250K IF AV = 250 A PSMF/PSMFR 250K VRRM = 100 - 1600 V Silicon Power Diode Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800


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    PDF 250/01K 250/02K 250/04K 250/06K 250/08K 250/10K 250/12K 250/14K 250/16K

    100 psm

    Abstract: No abstract text available
    Text: DO - 9 PSM/PSMR 320K IF AV = 320 A PSMF/PSMFR 320K VRRM = 100 - 1600 V Silicon Power Diode Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800


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    PDF 320/01K 320/02K 320/04K 320/06K 320/08K 320/10K 320/12K 320/14K 320/16K 100 psm

    Untitled

    Abstract: No abstract text available
    Text: DO - 8 PSM/PSMR 150K IF AV = 150 A PSMF/PSMFR 150K VRRM = 100 - 1600 V Silicon Power Diode Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800


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    PDF 150/01K 150/02K 150/04K 150/06K 150/08K 150/10K 150/12K 150/14K 150/16K

    Untitled

    Abstract: No abstract text available
    Text: DO - 9 PSM/PSMR 300K IF AV = 300 A PSMF/PSMFR 300K VRRM = 100 - 1600 V Silicon Power Diode Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800


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    PDF 300/01K 300/02K 300/04K 300/06K 300/08K 300/10K 300/12K 300/14K 300/16K

    psm 125

    Abstract: psmr
    Text: DO - 5 PSM/PSMR 70L PSM/PSMR 70K Silicon Power Diode IF AV = 70 A VRRM = 100 - 1600 V Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800 1000


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    PDF 70/01L 70/02L 70/04L 70/06L 70/08L 70/10L 70/12L 70/14L psm 125 psmr

    612L

    Abstract: No abstract text available
    Text: DO - 4 PSM/PSMR 6 Silicon Power Diode IF AV = 6A VRRM = 100 - 1600 V Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800 1000 1200 1400 1600 (V)


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    PDF 6/01L 6/02L 6/04L 6/06L 6/08L 6/10L 6/12L 6/14L 6/16L 150junction 612L

    Untitled

    Abstract: No abstract text available
    Text: DO - 4 PSM/PSMR 12 Silicon Power Diode IF AV = 12 A VRRM = 100 - 1600 V Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800 1000 1200 1400 1600


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    PDF 12/01L 12/02L 12/04L 12/06L 12/08L 12/10L 12/12L 12/14L 12/16L

    PA-1120

    Abstract: CN802 PA-1240 PA-1120RC CN901 monacor pa-1240 PA1120PTT monacor pa monacor pa1240 PA-1120RCD
    Text: ELA-MISCHVERSTÄRKER FÜR 5 ZONEN PA MIXING AMPLIFIER FOR 5 ZONES PA-1120 PA-1120RC Best.-Nr. 17.0780 Best.-Nr. 23.2440 PA-1240 PA-1120PTT Best.-Nr. 17.0790 Best.-Nr. 23.2450 BEDIENUNGSANLEITUNG INSTRUCTION MANUAL MODE D’EMPLOI ISTRUZIONI PER L’USO GEBRUIKSAANWIJZING


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    PDF PA-1120 PA-1120RC PA-1240 PA-1120PTT PA-1120 CN802 PA-1240 PA-1120RC CN901 monacor pa-1240 PA1120PTT monacor pa monacor pa1240 PA-1120RCD

    1606l

    Abstract: No abstract text available
    Text: DO - 4 PSM/PSMR 16 Silicon Power Diode IF AV = 16 A VRRM = 100 - 1600 V Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800 1000 1200 1400 1600


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    PDF 16/01L 16/02L 16/04L 16/06L 16/08L 16/10L 16/12L 16/14L 16/16L 1606l

    10D1703

    Abstract: 10D2303 10D2003
    Text: Key Parameters VRRM = 2300 IFAVM = 1140 IFSM = 13.5 VF0 = 0.83 rF = 0.30 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 10D2303 Doc. No. 5SYA 1120 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation


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    PDF 10D2303 Apr-98 10D2003 10D1703 CH-5600 10D2303 10D2003

    psm 125

    Abstract: 6008-K
    Text: DO - 5 PSM/PSMR 60L PSM/PSMR 60K Silicon Power Diode IF AV = 60 A VRRM = 100 - 1600 V Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800 1000


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    PDF 60/01L 60/02L 60/04L 60/06L 60/08L 60/10L 60/12L 60/14L psm 125 6008-K

    Untitled

    Abstract: No abstract text available
    Text: DO - 4 PSM/PSMR 25 Silicon Power Diode IF AV = 25 A VRRM = 100 - 1600 V Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800 1000 1200 1400 1600


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    PDF 25/01L 25/02L 25/04L 25/06L 25/08L 25/10L 25/12L 25/14L 25/16L

    D03316-473

    Abstract: LM2675 LM2675M-5.0 594D 595D AN-1120 LM267X 50eV 1D11A
    Text: National Semiconductor Application Note 1120 Wanda Garrett February 1999 Introduction generate voltage transients which can cause problems. For minimal inductance and ground loops, the traces which carry the highest currents input, ground, switch, and output signals are relatively wide and short. The external components


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    PDF LM2675 D03316-473 LM2675M-5.0 594D 595D AN-1120 LM267X 50eV 1D11A

    LYE65F

    Abstract: 5630 osram E656-AABB-26-1 Q65110A1852 LYE65F-BBCB-35-1-L E65B-AACA-24-1 Q65110A2352 2800 617 LA E63F-EAFA-24-1 E658-V1AE-1-1
    Text: Light Emitting Diodes | Lumineszenzdioden Package Gehäuse Type Bezeichnung En-ission oolor En-issionsf3rbe *GOfr ty p [n m ]/ Color coordi­ nates x/y k. V | 2ç (ty p ) (£0% Orden ng Code Bes:e nummer [mlm] [mA] n 710 . 1800 1450 Q65110A2763 1120 . 2800


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    PDF E658-V1AE-1-1 E65S-AABB-1-1 LSE65B-V1BE-1-1 Q65110A2763 Q65110A2784 Q65110A2762 E656-AABB-24-1 E85S-EACA-24-1 E65B-AACA-24-1 Q65110A2349 LYE65F 5630 osram E656-AABB-26-1 Q65110A1852 LYE65F-BBCB-35-1-L Q65110A2352 2800 617 LA E63F-EAFA-24-1

    1198A

    Abstract: 1196-A RN820
    Text: Gl 1N 248 B -» 1N 250 B 1N 1195 A -> 1N 1198 A RN 820/RN 1120 SGS-THOMSON tUEOTlEiMOSS S G S-THOnSON RECTIFIER DIODES • STANDARD RECTIFIER ■ HIGH SURGE CURRENT CAPABILITY . LOW FORWARD VOLTAGE DROP ABSOLUTE RATINGS limiting values Value Unit Average Forward Current*


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    PDF 820/RN 250cm. 310cm 1198A 1196-A RN820