Untitled
Abstract: No abstract text available
Text: PD-96039 HFA25TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits VF typ. * = 1.3V IF(AV) = 25A Qrr (typ.)= 112nC
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PD-96039
HFA25TB60SPbF
112nC
HFA25TB60S
08-Mar-07
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HFA25TB60PbF
Abstract: B120 HFA06TB120 HFA25TB60 IRFP250
Text: PD-95741 HFA25TB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 4 IF AV = 25A Qrr (typ.)= 112nC 2
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PD-95741
HFA25TB60PbF
112nC
HFA25TB60
HFA06TB120
HFA06T
HFA25TB60PbF
B120
HFA06TB120
IRFP250
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600V 25A Ultrafast Diode
Abstract: HFA50PA60C IRFP250
Text: Bulletin PD -2.337 rev. B 11/00 HFA50PA60C HEXFRED Ultrafast, Soft Recovery Diode TM VR = 600V VF typ. * = 1.3V Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions IF(AV) = 25A Qrr (typ.)= 112nC
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HFA50PA60C
112nC
HFA50PA60C
600V 25A Ultrafast Diode
IRFP250
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HFA50PA60C
Abstract: IRFP250
Text: Bulletin PD -2.337 rev. C 05/01 HFA50PA60C HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 600V VF typ. * = 1.3V 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions IF(AV) = 25A Qrr (typ.)= 112nC
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HFA50PA60C
112nC
HFA50PA60C
featur50
O-247AC
IRFP250
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Untitled
Abstract: No abstract text available
Text: PD-96039 HFA25TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits VF typ. * = 1.3V IF(AV) = 25A Qrr (typ.)= 112nC
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PD-96039
HFA25TB60SPbF
112nC
HFA25TB60S
HFA25TB60S
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HFA25PB60PbF
Abstract: HFA25PB60 IRFP250 200V 50A TRANSISTOR diode HFA25PB60
Text: PD - 95684A HFA25PB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits VF typ. * = 1.3V IF(AV) = 25A 4 Qrr (typ.)= 112nC
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5684A
HFA25PB60PbF
112nC
HFA25PB60
O-247AC
HFA25PB60PbF
IRFP250
200V 50A TRANSISTOR
diode HFA25PB60
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diode HFA25PB60
Abstract: HFA25PB60 IRFP250 HFA25PB60PBF
Text: PD - 95684A HFA25PB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits VF typ. * = 1.3V IF(AV) = 25A 4 Qrr (typ.)= 112nC
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5684A
HFA25PB60PbF
112nC
HFA25PB60
12-Mar-07
diode HFA25PB60
IRFP250
HFA25PB60PBF
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B120
Abstract: HFA06TB120 HFA25TB60 IRFP250
Text: PD-95741 HFA25TB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 4 IF AV = 25A Qrr (typ.)= 112nC 2
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PD-95741
HFA25TB60PbF
112nC
HFA25TB60
12-Mar-07
B120
HFA06TB120
IRFP250
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Untitled
Abstract: No abstract text available
Text: PD - 95684 HFA25PB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits VF typ. * = 1.3V IF(AV) = 25A 4 Qrr (typ.)= 112nC
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HFA25PB60PbF
112nC
HFA25PB60
O-247AC
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Untitled
Abstract: No abstract text available
Text: PD-95741 HFA25TB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 4 IF AV = 25A Qrr (typ.)= 112nC 2
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PD-95741
HFA25TB60PbF
112nC
HFA25TB60
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: PD - 95684A HFA25PB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits VF typ. * = 1.3V IF(AV) = 25A 4 Qrr (typ.)= 112nC
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5684A
HFA25PB60PbF
112nC
HFA25PB60
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: Bulletin PD -2.337 rev. C 05/01 HFA50PA60C HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 600V VF typ. * = 1.3V 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions IF(AV) = 25A Qrr (typ.)= 112nC
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HFA50PA60C
112nC
HFA50PA60C
08-Mar-07
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SMD TRANSISTOR MARKING 9bb
Abstract: HFA25TB60S IRFP250 SMD-220
Text: Bulletin PD -20616 rev. A 12/00 HFA25TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VR = 600V VF typ. * = 1.3V IF(AV) = 25A Qrr (typ.)= 112nC
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HFA25TB60S
112nC
HFA25TB60S
SMD TRANSISTOR MARKING 9bb
IRFP250
SMD-220
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HFA25TB60S
Abstract: IRFP250
Text: PD-96039 HFA25TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits VF typ. * = 1.3V IF(AV) = 25A Qrr (typ.)= 112nC
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PD-96039
HFA25TB60SPbF
112nC
HFA25TB60S
12-Mar-07
IRFP250
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MAX5972
Abstract: MAX5972B MAX15000 JESD51-5
Text: 19-4924; Rev 1; 2/10 TION KIT EVALUA BLE A IL A V A IEEE 802.3af/at-Compliant, Powered Device Interface Controller with Integrated Power MOSFET Features The MAX5972A provides a complete interface for a powered device PD to comply with the IEEE 802.3af/
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MAX5972A
180mA
720mA
880mA)
MAX5972B
MAX5972A
MAX5972
MAX15000
JESD51-5
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Untitled
Abstract: No abstract text available
Text: Bulletin PD -2.339 rev. A 11/00 HFA25TB60 HEXFRED Ultrafast, Soft Recovery Diode TM BASE CATHODE Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits • Reduced RFI and EMI
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HFA25TB60
112nC
HFA25TB60
08-Mar-07
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MAX5969BETB
Abstract: MAX5969 "powered device"
Text: 19-5008; Rev 0; 12/09 TION KIT EVALUA BLE AVAILA IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated Power MOSFET Features The MAX5969A/MAX5969B provide a complete interface for a powered device PD to comply with the IEEE 802.3af/at standard in a power-over-Ethernet (PoE) system. The MAX5969A/MAX5969B provide the PD with a
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MAX5969A/MAX5969B
180mA
720mA
880mA)
T1033
MAX5969BETB
MAX5969
"powered device"
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TRANSISTOR SMD MARKING CODE DM
Abstract: 600v 10A ultra fast recovery diode TRANSISTOR SMD 2x t TRANSISTOR SMD MARKING CODE 2x I 600V 25A Ultrafast Diode TRANSISTOR SMD MARKING CODE 2x TRANSISTOR SMD MARKING CODE 42 HFA25TB60S IRFP250 SMD TRANSISTOR MARKING 9bb
Text: PD -20616 01/99 HFA25TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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HFA25TB60S
112nC
HFA25TB60S
TRANSISTOR SMD MARKING CODE DM
600v 10A ultra fast recovery diode
TRANSISTOR SMD 2x t
TRANSISTOR SMD MARKING CODE 2x I
600V 25A Ultrafast Diode
TRANSISTOR SMD MARKING CODE 2x
TRANSISTOR SMD MARKING CODE 42
IRFP250
SMD TRANSISTOR MARKING 9bb
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Untitled
Abstract: No abstract text available
Text: Bulletin PD -2.338 rev. B 01/04 HFA25PB60 HEXFRED Ultrafast, Soft Recovery Diode TM Features VR = 600V BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 1.3V IF(AV) = 25A
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HFA25PB60
112nC
HFA25PB60
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: 19-5732; Rev 2; 8/11 IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated Power MOSFET The MAX5981 provides a complete interface for a powered device PD to comply with the IEEE 802.3af/at standard in a power-over-ethernet (PoE) system. The
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MAX5981
180mA
720mA
880mA)
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Untitled
Abstract: No abstract text available
Text: 19-5008; Rev 0; 12/09 TION KIT EVALUA BLE AVAILA IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated Power MOSFET The MAX5969A/MAX5969B provide a complete interface for a powered device PD to comply with the IEEE 802.3af/at standard in a power-over-Ethernet (PoE) system. The MAX5969A/MAX5969B provide the PD with a
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MAX5969A/MAX5969B
180mA
720mA
880mA)
T1033
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igbt1
Abstract: PFC3M-10000
Text: SENSITRON PFC3M-10000 SEMICONDUCTOR PRELIMINARY TECHNICAL DATA DATA SHEET 4173, REV. A 10 KW, 3 Phase Module For Active Power Factor Correction • • • • • • O • -55 to +150 C • Access to all IGBT Leads • Easy Heat Sink Mounting • Cost Effective
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PFC3M-10000
112nC
igbt1
PFC3M-10000
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9936 transistor
Abstract: HFA25TB60 IRFP250 transistor sec 623
Text: Bulletin PD -2.339 rev. A 11/00 HFA25TB60 HEXFRED Ultrafast, Soft Recovery Diode TM BASE CATHODE Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits • Reduced RFI and EMI
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HFA25TB60
112nC
HFA25TB60
9936 transistor
IRFP250
transistor sec 623
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Untitled
Abstract: No abstract text available
Text: 19-5926; Rev 0; 6/11 IEEE 802.3af/at-Compliant, Powered Device Interface Controller with Integrated Power MOSFET Features The MAX5969D provides a complete interface for a powered device PD to comply with the IEEE 802.3af/ at standard in a power-over-Ethernet (PoE) system. The
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MAX5969D
180mA
720mA
880mA)
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