Contextual Info: Spec Sheet INDUCTORS SMD Power Inductors NR series H type NRH2410T1R5MN Features Item Summary 1.5 H(±20%), 1550mA, 1160mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2500pcs Products characteristics table External Dimensions

Contextual Info: Spec Sheet INDUCTORS High Reliability Application SMD Power Inductors for Industrial / Automotive Comfort and Safeｔｙ Applications (NR series H type / V type / S type) NRH2410T1R5MNV Features Item Summary 1.5 H(±20%), 1550mA, 1160mA Lifecycle Stage

Contextual Info: Using the TPS2511EVM-141 User's Guide Literature Number: SLUU945 June 2012 User's Guide SLUU945 – June 2012 TPS2511EVM-141 USB Dedicated Charging Port Controller and Power Switch Evaluation Module 1 Introduction This user’s guide describes the evaluation module EVM for the TPS2511. TPS2511 is a USB dedicated

Contextual Info: Enhanced H IV f e m o iy S u t e r n s DM512K64DTBDM512K72DTE Multibank Burst EDOEDRAM 5 12Kb x 64/512Kb x 72 Enhanced DRAM DIMM b e . Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache

CQX 86

Abstract: U832 write-verify RaR8 81 u218 A09T
Contextual Info: DM512K64DTE/DM512K72DTE Multibank Burst EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache • Fast 4Mbyte DRAM Array for 30ns Access to Any New Page

D0-35

Abstract: u327
Contextual Info: Enhanced Memory Systems Inc. DM1M36SJ6/DM1M32SJ6 Multibank EDO 1Mbx36/1Mbx32 Enhanced DRAM SIMM Product Specification Features Architecture The DM1M36SJ achieves 1Mb x 36 density by mounting nine 1Mb x 4 EDRAMs, packaged in 28-pin plastic SOJ packages, on a multilayer substrate. Eight DM2242

Contextual Info: DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 Enhanced DRAM SIMM r ^ M T R O N Product Specification Features Architecture • 2KByte SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes

U716

Abstract: U6915 1178Q
Contextual Info: H Enhanced DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32 Enhanced DRAM SIMM IVfemoiy Suterns I x . Product Specification Features Architecture • 4KByte SRAM Cache Memory for 12ns Random Reads Within Two Active Cache Pages ■ Fast DRAM Array for 30ns Axessto Any New Page

2mb 72-pin simm

Abstract: 10782
Contextual Info: DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 Enhanced DRAM SIMM F ^ M T R O N Product Specification Features • 2Kbyte SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes

Contextual Info: Lithium Ion UF484462ST Features & Benefits Specifications • High capacity model High charge voltage • High energy density and voltage • Long, stable power with a flat discharge voltage • Ideal for portable communications, portable computing, and robotics.

Computer Products afc5

Abstract: AFC5-5S15-F AFC5-5D15-F AFC5-12S05-F AFC5-12S12-F AFC5-12S15-F AFC5-5S12-F AFC5-12D12-F AFC5-5S15 AFC5-5S05-F
Contextual Info: AFC5-F SERIES SPECIFICATIONS 231-563 231-585 231-608 231-620 231-642 RS Stock Numbers: All specifications are typical at nominal input, nominal output voltage, max. load and 25oC unless otherwise stated. OUTPUT GENERAL 5 Watts Output Power Voltage Accuracy

Contextual Info: PART NUMBER: 826ALG063MGBJ RADIAL LEAD ALUMINUM POLYMER CAPACITORS Pans are r o h s compliant ELECTRICAL SPECIFICATIONS Capacitance: 82 uF Tolerance: -20 % . +20 % Dissipation Factor: 0.12 Max at 120 Hz and 20°C WVDC: 63 Volts DC Temperature Range: -55°C to +125°C

Contextual Info: PART NUMBER: 157ALG063MGBJ RADIAL LEAD ALUMINUM POLYMER CAPACITO RS P a rts a re R oHS c o m p lia n t ELECTRICAL SPECIFICATIONS C apacitance: 150 uF T ole ra n ce: -20 % . +20 % Dissipation Factor: 0.12 Max at 120 Hz and 20°C WVDC: 63 Volts DC T em p e ra tu re Range: -55°C to +125°C

U10A-14

Abstract: U11A-8 CQX 86 512kx8 dram simm cqx 87 u12A U11C U832 U12A-14 u318
Contextual Info: DM512K64DT6/DM512K72DT6 Multibank EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page

Contextual Info: MAX77342 1.6A Adaptive DC-DC Step-Up Converter with High-Side Flash Driver General Description The MAX77342 provides a highly efficient solution for cell phone camera flash applications by integrating a 1.6A PWM DC-DC step-up converter and three programmable

Contextual Info: MAX77342 1.6A Adaptive DC-DC Step-Up Converter with High-Side Flash Driver General Description The MAX77342 provides a highly efficient solution for cell phone camera flash applications by integrating a 1.6A PWM DC-DC step-up converter and three programmable

Contextual Info: DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32Enhanced DRAMSIMM r ^ M T R O N Product Specification Features Architecture • 4KByte SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes

ntc 10K

Abstract: ntc 901 P2610 ntc20 NTC-10k ntc 2,0 VARTA VKB 3.7v 1130MaH PCM 3.7V VARTa c size battery
Contextual Info: 4 Adhesive kapton tape Adhesive d/s nomex tape 5 3 PCM PLFE NTC Adhesive d/s nomex tape 6 L - Tag This is a controlled document. Hardcopy to be endorsed by authorised person. Check with Issuing Officer or SAP system for latest update. Specification 1. General:

Constant Voltage

Contextual Info: LED Power Supplies 42W LED Power 42W LXV42 series LED Power Supply Constant Voltage LED Power Supplies LED POWER next generation power source FEATURES • High Efficiency up to 88% • Active PFC (Typical 0.92) • IP66 Waterproof • OVP, SCP,OLP • UL1310 Class 2

U615

Abstract: DM 0365 R pin EQUIVALENT U716 U1018
Contextual Info: DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32EnhancedDRAMSIMM r ^ p M T R O N Features • 4Kbyte SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes

A0LA

Contextual Info: n E n h a n c e d Memory Systems Inc. DM1M36SJ&DM1M32SJ6Multibank EDO 1Mbx36/1Mbx32 Enhanced DRAM SIMM Product Specification Features Architecture The DM1M36SJ achieves 1Mb x 36 density by mounting nine 1Mb x 4 EDRAMs, packaged in 28-pin plastic SOJ packages, on a multi­

ESI 2160

Abstract: u332 U11B2 cqx 87 u918
Contextual Info: Enhanced Memory Systems Inc. DM512K64DÎ6/DM512K720T6MultibankEDO EDRAM 512Kb x6 4 /5 m x 72 EnhancedDRAM D m Product Specification Features • 8 Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page

Computer Products afc5

Abstract: 05S12F AFC5-05D15-F AFC5-05D12F AFC505D15F AFC5-05S05F AFC5-12S05F AFC5-05D12-F AFC5 computer products AFC505D12F computer products
Contextual Info: AFC5-F SERIES Single and Dual Output 5 Watt DC/DC C onverters • • • • • • Linear Regulated Outputs Very Low Output Noise Six-sided metal EMI Shield Small Size - Just 1" x 2" x 0.375" 6 Watts/Cubic Inch 94V-0 Flammablllty Rating The AFC5-F series of single and dual output DC/DC converters

vh41

Abstract: u327
Contextual Info: DM 1M36SJ & DM 1M32SJ 1Mbx 36/1Mbx 32EnhancedDRAMSIMM A / r ^ M I R O N Features Preliminary Datasheet Architecture m Compatibility with JEDEC • ■ ■ ■ ■ ■ 1M x 36 DRAM SIMM Configuration Allows Performance Upgrades in System Integrated 512 \ 36 SRAM Cache Row Register Allows 15ns