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    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN5300A N-Channel Silicon MOSFET 2SK2316 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. • Ultrahigh-speed switching. unit: mm 2062A-PCP • Low-voltage drive 2.5V drive . [2SK2316] 1 : Gate 2 : Drain


    Original     		PDF EN5300A 2SK2316 062A-PCP 2SK2316] 250mm2Ã

    transistor 2sc5299

    Abstract: TA-0588 2039C-TO3PML 2SC5299 equivalent 2SC5299 TRANSISTOR NPN 8A 800V EN5293
    Text: Ordering number : EN5293 NPN Triple Diffused Planar Silicon Transistor 2SC5299 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High Speed : tf=100ns typ. • High Breakdown voltage : VCBO=1500V. • High reliability Adoption of HVP process .


    Original     		PDF EN5293 2SC5299 100ns 2039C-TO3PML 2SC5299] transistor 2sc5299 TA-0588 2039C-TO3PML 2SC5299 equivalent 2SC5299 TRANSISTOR NPN 8A 800V EN5293

    Untitled

    Abstract: No abstract text available
    Text: 2SC4673 Ordering number : EN3927A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC4673 UHF Low-Noise Amplifier, Wide-Band Amplifier Applications Features • • • Low noise figure : NF=1.5dB typ f=0.9GHz . High power gain : ⏐S21e⏐2=8.0dB typ (f=0.9GHz).


    Original     		PDF 2SC4673 EN3927A

    TA-0718

    Abstract: 2088a FP107 2SB1396
    Text: Ordering number:EN5413A FP107 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode in one package, facilitating highdensity mounting.


    Original     		PDF EN5413A FP107 FP107 2SB1396 SBS001. FP107] TA-0718 2088a

    transistor 2sc5299

    Abstract: 2SC5299 equivalent 2SC5299
    Text: Ordering number:EN5293 NPN Triple Diffused Planar Silicon Transistor 2SC5299 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability Adoption of HVP process .


    Original     		PDF EN5293 2SC5299 100ns 2039D 2SC5299] transistor 2sc5299 2SC5299 equivalent 2SC5299

    TA0587

    Abstract: TA-0587 2SC5298 52923
    Text: Ordering number:EN5292 NPN Triple Diffused Planar Silicon Transistor 2SC5298 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability Adoption of HVP process .


    Original     		PDF EN5292 2SC5298 100ns 2039D 2SC5298] TA0587 TA-0587 2SC5298 52923

    j200 ON Semiconductor

    Abstract: cd 5411 ic j200 transistor j200 2SC4673 ITR07408 ITR07409 ITR07410 ITR07411 KT 828 A
    Text: 2SC4673 Ordering number : EN3927A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC4673 UHF Low-Noise Amplifier, Wide-Band Amplifier Applications Features • • • Low noise figure : NF=1.5dB typ f=0.9GHz . High power gain : ⏐S21e⏐2=8.0dB typ (f=0.9GHz).


    Original     		PDF 2SC4673 EN3927A S21e2 j200 ON Semiconductor cd 5411 ic j200 transistor j200 2SC4673 ITR07408 ITR07409 ITR07410 ITR07411 KT 828 A

    2039C-TO3PML

    Abstract: 2SC5298 TRANSISTOR NPN 8A 800V
    Text: Ordering number : EN5292 NPN Triple Diffused Planar Silicon Transistor 2SC5298 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High Speed : tf=100ns typ. • High Breakdown voltage : VCBO=1500V. • High reliability Adoption of HVP process .


    Original     		PDF EN5292 2SC5298 100ns 2039C-TO3PML 2SC5298] 2039C-TO3PML 2SC5298 TRANSISTOR NPN 8A 800V

    cd 5411 ic

    Abstract: transistor kt 326 2SC3778 2SC4673 ITR07408 ITR07409 ITR07410 ITR07411 ITR07412 KT 828 A
    Text: Ordering number:ENN3927 NPN Epitaxial Planar Silicon Transistor 2SC4673 UHF Low-Noise Amplifier, Wide-Band Amplifier Applications Features Package Dimensions • Low noise figure : NF=1.5dB typ f=0.9GHz . · High power gain : S21e2=8.0dB typ (f=0.9GHz).


    Original     		PDF ENN3927 2SC4673 S21e2 2SC4673] 25max cd 5411 ic transistor kt 326 2SC3778 2SC4673 ITR07408 ITR07409 ITR07410 ITR07411 ITR07412 KT 828 A

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN3971 NPN Epitaxial Planar Silicon Transistor 2SD1908 CRT Display Horizontal Deflection Output Applications Features Package Dimensions unit:mm 2049C [2SD1908] 10.2 4.5 1.3 20.9 1.6 11.5 8.8 0.9 • Fast switching speed. · Especially suited for use in high-definition CRT


    Original     		PDF EN3971 2SD1908 2049C 2SD1908] O-220MF

    cd 5411 ic

    Abstract: 2SC3778 2SC4673 TRANSISTOR C 3619
    Text: Ordering number:EN3927 NPN Epitaxial Planar Silicon Transistor 2SC4673 UHF Low-Noise Amplifier, Wide-Band Amplifier Applications Features Package Dimensions • Low noise figure : NF=1.5dB typ f=0.9GHz . · High power gain : S21e2=8.0dB typ (f=0.9GHz).


    Original     		PDF EN3927 2SC4673 S21e2 2SC4673] 25max cd 5411 ic 2SC3778 2SC4673 TRANSISTOR C 3619

    cd 5411 ic

    Abstract: TRANSISTOR C 3619 uhf amp circuit diagrams 2SC4673 ic 2764 B 773 transistor c 3927 transistor c 3927 EN3927 2038p
    Text: Ordering number : EN3927 NPN Epitaxial Planar Silicon Transistor 2SC4673 UHF Low-Noise Amp, Wide-Band Amp Applications Features Package Dimensions • Low noise figure : NF=1.5dB typ f=0.9GHz . unit: mm • High power gain : S2le2=8.0dB typ (f=0.9GHz).


    Original     		PDF EN3927 2SC4673 2038-PCP 2SC4673] 250mm2 cd 5411 ic TRANSISTOR C 3619 uhf amp circuit diagrams 2SC4673 ic 2764 B 773 transistor c 3927 transistor c 3927 EN3927 2038p

    2062a

    Abstract: 2SK2316
    Text: Ordering number : EN5300A N-Channel Silicon MOSFET 2SK2316 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive 2.5V drive . unit: mm 2062A-PCP [2SK2316] 1 : Gate 2 : Drain


    Original     		PDF EN5300A 2SK2316 062A-PCP 2SK2316] 250mm2 2062a 2SK2316

    2SC5299 equivalent

    Abstract: transistor 2sc5299 2SC5299
    Text: Ordering number:EN5293 NPN Triple Diffused Planar Silicon Transistor 2SC5299 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability Adoption of HVP process .


    Original     		PDF EN5293 2SC5299 100ns 2039D 2SC5299] 2SC5299 equivalent transistor 2sc5299 2SC5299

    2049B-TO-220MF

    Abstract: 39713 2SD1908 EN3971 2049B
    Text: Ordering number : EN3971 NPN Epitaxial Planar Silicon Transistor 2SD1908 CRT Display Horizontal Deflection Output Applications Features Package Dimensions • Fast switching speed. unit: mm • Especially suited for use in high-definition CRT display : 2049B-TO-220MF


    Original     		PDF EN3971 2SD1908 2049B-TO-220MF 2SD1908] O-220MF 2049B-TO-220MF 39713 2SD1908 EN3971 2049B

    Untitled

    Abstract: No abstract text available
    Text: Ordering num ber: EN3971 2SD1908 No.3971 NPN Epitaxial Planar Silicon Transistor CRT Display Horizontal Deflection Output Applications Features • Fast switching speed. • Especially suited for use in high-definition CRT display : Vcc = 6 to 12V. •Wide ASO and highly resistant to breakdown.


    OCR Scan     		PDF EN3971 2SD1908

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN5293 NPN Triple Diffused Planar Silicon Transistor 2SC5299 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High Speed : t p 100ns typ. • High Breakdown voltage : V c g o = 1500V.


    OCR Scan     		PDF EN5293 2SC5299 100ns 2039D-T03PML 2SC5299] T03PML 11697YK TA-0588