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    117 S TRANSISTOR Search Results

    117 S TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    117 S TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HT3814B

    Abstract: romance de amor HT3812J HT3812H Rudolph The Red-Nosed Reindeer MUSIC NOTES ht3813a HT3813D 4123 transistor HT3814A HT3812B
    Text: HT3810 Series 128-Note Melody Generators Features • • • • • • • Operating voltage: 2.4V~5.0V 7 tempo options: 469, 234, 156, 117, 94, 78, 67 2 Envelope sustain durations: 1 beat, 2 beat s 2 “CHA” sustain duration options: 1/8 beat or 1/4 beat


    Original     		PDF HT3810 128-Note 128-note 128-notes HT3814F HT3814G HT3814H HT3814I HT3814J HT3814B romance de amor HT3812J HT3812H Rudolph The Red-Nosed Reindeer MUSIC NOTES ht3813a HT3813D 4123 transistor HT3814A HT3812B

    Untitled

    Abstract: No abstract text available
    Text: Maxi Family 72 V Input Actual size: 4.6 x 2.2 x 0.5 in 117 x 56 x 12,7 mm S C US C NRTL US DC-DC Converter Module Features • DC input range: 43 – 110 V continuous • Isolated output • Encapsulated circuitry for shock and • Extended temperature range


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Maxi Family 72 V Input Actual size: 4.6 x 2.2 x 0.5 in 117 x 56 x 12,7 mm S C US C NRTL US DC-DC Converter Module Features • DC input range: 43 – 110 V continuous • Isolated output • Encapsulated circuitry for shock and • Extended temperature range


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Maxi Family 110 V Input Actual size: 4.6 x 2.2 x 0.5 in 117 x 56 x 12,7 mm S C US C NRTL US DC-DC Converter Module Features • DC input range: 66 – 154 V continuous • Isolated output • Encapsulated circuitry for shock and Applications • • •


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Maxi Family 72V Input Actual size: 4.6 x 2.2 x 0.5 in 117 x 56 x 12,7 mm S C US C NRTL US DC-DC Converter Module Features • DC input range: 43 – 110 V continuous • Isolated output • Encapsulated circuitry for shock and • Extended temperature range


    Original     		PDF

    3055t

    Abstract: 2955T 2n2646 pin N2647 N-055 3055H n055 2N2646 2N4393 RU 6102
    Text: AD VA NI O E R L I K O N / SEMICOND 3bE D • ü2blbMñ QOQDQ1S 3 ■ S E L I — r - 2 1 /7 - ö SILICON TRANSISTORS SEMICONDUCTORS g Power transistors TYPE NPN ; PNP PD Tc=25°C W VCBO V 117 117 117 117 75 75 75 115 75 150 150 150 117 25 50 25 50 50 50


    OCR Scan     		PDF 02Llb4Ã 0D00D1S 3055H 3055T O-220 2955T -TO-220 800ru O-105 O-106 2n2646 pin N2647 N-055 n055 2N2646 2N4393 RU 6102

    smd transistor 6m

    Abstract: No abstract text available
    Text: OptoMOS Solid State Telecom Switches Relay Portion Pins 1,2,7,8 Engineering S pecificatio ns D ete cto r Portion (Pins 3 ,4 ,5 ,6 )* TS 117 Engineering S pecifications TS 117 O utput C haracteristics (Pins 7,8) O n-R esistance at 120 mA lLoaD(Ohms) Minimum


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: V A R I- L S IE CO I N C D Bl m 37b2H 0001D4Ô S • VRL X -5 0 -1 5 VCO-117 Voltage Controlled Oscillator 300-600 MHz GUARANTEED MINIMUM PERFORMANCE DATA DESCRIPTION The VCO-117 Voltage Controlled Oscillator* combines film circuit technology with a custom, stable high-Q varactor


    OCR Scan     		PDF 37b2H 0001D4Ã VCO-117 6061-T6. UNC-38 QQ-N-290,

    SGS115

    Abstract: sgs110 SGS111 SGS112
    Text: £ Z 7 S G S -T H O M S O N T IP /S G S I10- 111-112 ^ 7 # MOœLiOTOMDOi T IP /S G S 1 15-116-117 POWER DARLINGTONS D E S C R IP T IO N The TIP110, TIP111, TIP112 and SGS110, SGS111, SGS112 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration


    OCR Scan     		PDF TIP110, TIP111, TIP112 SGS110, SGS111, SGS112 OT-82 SGS115 sgs110 SGS111

    v16070

    Abstract: No abstract text available
    Text: Ordering number: EN 3115 FC 117 PNP Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp Applications F e a tu re s •Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.


    OCR Scan     		PDF 2SA1753, v16070

    sgs110

    Abstract: SGS116
    Text: •I 7 ^ 2 3 7 002^2^3 fi H ^ 3 3 ^/ SCS-THOMSON TIP/SGS110-111-112 [IQMmiiOïtMQÛS TIP/SGS115-116-117 S G S-TH0MS0N 3DE D POWER DARLINGTONS DESCRIPTIO N The TIP110, TIP111, TIP112 and SGS110, SGS111, SQS112 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration


    OCR Scan     		PDF TIP/SGS110-111-112 TIP/SGS115-116-117 TIP110, TIP111, TIP112 SGS110, SGS111, SQS112 O-220 OT-82 sgs110 SGS116

    LM117T

    Abstract: motorola LM317 REGULATOR IC 7905 motorola lm317k lm317t motorola transistor a750 K1170 1E75 lm317 so8 LM117 to92
    Text: MOTOROLA s c {TELECOM} 14E » I b3b?aS3 0001733 1 | LM 117 ^ M O T O R O L A LM 217 LM 317 Sp ecification s and A p plications Inform ation THREE-TERMINAL ADJUSTABLE POSITIVE VOLTAGE REGULATORS THREE-TERMINAL ADJUSTABLE OUTPUT POSmVE VOLTAGE REGULATORS


    OCR Scan     		PDF LM117/217/317 LM117 CMH30HO: LM117T motorola LM317 REGULATOR IC 7905 motorola lm317k lm317t motorola transistor a750 K1170 1E75 lm317 so8 LM117 to92

    T1P112

    Abstract: No abstract text available
    Text: b2 TE XA S IN ST R -COPTO} DE? ûlfcilTEb DG3bflfl2 t. 89 61726 TEXAS INSTR <OPTO) 62C 36882 TIPT10, TIP111, TIP112 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 Designed for Complementary Use With T IP 115, T IP 116, T IP 117


    OCR Scan     		PDF TIPT10, TIP111, TIP112 T-33-29 T1P112

    ic 4604

    Abstract: lvco 251C 2SB1172 2SB1172A 2SD1742 2sb1742 t150t
    Text: 2SB1172, 2SB1172A Power Transistors 2 S B 1 1 7 2 , 2SB 117 2A Silicon PNP Epitaxial Planar Type A F Pow er Amplifier C om plem entary Pair with 2 S D 1 7 4 2 , 2 S B 1 7 4 2 Package Dimensions Unit • mm • Features 3-7 max, 7.3max. 3.2max. • High DC current gain hpE and good linearity


    OCR Scan     		PDF 2SB1172, 2SB1172A 2SD1742, 2SB1742 2SB1172 ic 4604 lvco 251C 2SB1172A 2SD1742 2sb1742 t150t

    Untitled

    Abstract: No abstract text available
    Text: 2N3055S m \\ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3055S is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS PACKAGE STYLE T O - 3 U 4J 15 A lc 7.0 A T -U S E A T IN G PLANE. V CE 60 V p 1 DISS 117 W @ Tc = 25 °C


    OCR Scan     		PDF 2N3055S 2N3055S

    ESM117

    Abstract: ESM162 max-h21E ESM16 esm 117 esm 906 data
    Text: ESM 161 ESM162 PNP S ILIC O N D A R L IN G T O N TR A N S IS TO R S , E P IT A X IA L BASE TRANSISTORS PNP D ARLIN G TO N SILIC IU M , BASE EPITAXIEE Compl. ESM 117, 118 P R E L IM IN A R Y D A TA N OTICE PR EL IM IN A IRE Monolithic construction Construction m onolithique


    OCR Scan     		PDF ESM162 CB-19 ESM117 ESM162 max-h21E ESM16 esm 117 esm 906 data

    730C-04

    Abstract: moc8103 M0C8104 MOC8101 MOC8102 MOC8104 730D-05 MOC81Q4
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VDE UL ca <S> ® CSA BS SEMKO OEMKO NEMKO SETI BABT 6-Pin DIP Optoisolators For Power Supply Applications No Base Connection MOC8101* [CTR = 50-80% ] MOC8102* [CTR e 73-117%] MOC8103 [CTR e 108-173%] MOC8104 [CTR


    OCR Scan     		PDF MOC8101, MOC8102, MOC8103 MOC8104 730C-04 M0C8104 MOC8101 MOC8102 730D-05 MOC81Q4

    Untitled

    Abstract: No abstract text available
    Text: CONIdELL CORP/ ANALOG SYS S IE D 2413*117 0D00353 bSb B N R C -79-fc-H MA-207 Super Fast, Wideband Operational Amplifier r iN H L O G S Y S T E M S .G E N E R A L D E S C R IP T IO N ' D A TA SHEET FEATURES' 1.5GHz GAIN-BANDWIDTH PRODUCT ±800V / uS SLEW RATE


    OCR Scan     		PDF 0D00353 -79-fc-H MA-207 200mA MA-207

    ha2526

    Abstract: HA7-2620 HA-2620 HA2622 HA-2625-5 HA2625 2625-5 HA2-2625-5
    Text: HARRIS SEMICOND SECTOR m W blE ] • 43G2B71 004bSM5 117 H H A S HA-2620, HA-2622 HARRIS HA-2625 SEMICONDUCTOR Very Wideband, Uncompensated Operational Amplifiers RN M SO B3 Features Description • Gain Bandwidth Product Ay 2 5). 100MHz • High Input Im pedance.500MQ


    OCR Scan     		PDF 43G2B71 004bSM5 HA-2620, HA-2622 HA-2620/2622/2625 HA-2620) 100MHz HA2620/2622/2625 ha2526 HA7-2620 HA-2620 HA2622 HA-2625-5 HA2625 2625-5 HA2-2625-5

    SSM2116

    Abstract: ssm-2116 018t power SSM2018TR SM2018T 018T SM2118T SSM2018 IC 7470 pin configuration
    Text: Trimless Voltage Controlled Amplifiers A N ALO G D E V IC E S SSM2018T/SSM2118T* FUNCTIONAL BLOCK DIAGRAMS FEATURES 117 dB Dynamic Range 0.006% Typical THD+N l@ 1 kHz, Unity Gain 140 dB Gain Range No External Trimming Required Differential Inputs Complementary Gain Outputs


    OCR Scan     		PDF SSM2018T) SSM2118T) SSM2018T/SSM2118T* 2018T 2118T 2018T) 2118T) SSM2116T SSM2118T SSM2116 ssm-2116 018t power SSM2018TR SM2018T 018T SM2118T SSM2018 IC 7470 pin configuration

    3055 5C pnp transistor

    Abstract: tip 212 tip 127 texas instruments cd 5151 cd darlington complementary power amplifier tip 142 TIP 42 transistor darlington circuit tip 42 tip darlington pnp tlp111 transistor tip 3055
    Text: TYPES TIP110, TIP111, TIP112 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D E S IG N E D FO R C O M P L E M E N T A R Y U S E W ITH TIP 1 1 5 , T IP 1 1 6 , TIP 117 • High SO/1 Capability, 40 V and 1.25 A • 50 W at 2 5 °C Case Temperature •


    OCR Scan     		PDF TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 25-mJ TIP110 TIP111 3055 5C pnp transistor tip 212 tip 127 texas instruments cd 5151 cd darlington complementary power amplifier tip 142 TIP 42 transistor darlington circuit tip 42 tip darlington pnp tlp111 transistor tip 3055

    TIP111

    Abstract: No abstract text available
    Text: TYPES TIP110, TIPTI1, TIP112 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS DESIGNED FOR COMPLEMENTARY USE WITH TIP115,TIP116,TIP 117 •' CD CO c 5 r » High S O i Capability, 40 V and 1.25 A • 50 W at 25°C Case Temperature • Min hFE of 500 at 4 V, 2 A


    OCR Scan     		PDF TIP110, TIP112 TIP115 TIP116 25-mJ TIP111

    westinghouse transistors

    Abstract: tic 2116 B WESTINGHOUSE transistor 2N3442 transistor 2n3442
    Text: “□ o s: m m x T D 64-673 Page 3 > Silicon Power Transistors J E D E C Type 2N3442 Westinghouse cn -*J N sO For Switching, Amplifier and Regulator Applications 10 Amperes, 117 Watts O' ISJ Application The Westinghouse 2N3442 is an N PN dif­ fused transistor. This general-purpose tran­


    OCR Scan     		PDF 2N3442 2N3442 C/2116/D C/2117 westinghouse transistors tic 2116 B WESTINGHOUSE transistor transistor 2n3442

    BDX 241

    Abstract: TRANSISTOR 246 transistor BD 240 transistor BD 246 TRANSISTOR Bd 137 BD139-6 transistor BD 249 transistor bd 242 transistor BD245 BD137
    Text: BDI 37 NPflM EPITAXIAL PLANAR SILICON TRANSISTOR 117 1 D E S I G N E D F O R C O M P L E M E N T A R Y U S E W ITH B D 138 • Driver Stages • A ctive Convergence • C ontrol Circuits • Sw itching Application • Ptot = 6.5 W at T c = 60 ° C • hFE > 40 at lc = 150 m A


    OCR Scan     		PDF BD137 BD138 MIL-STD-750. OT-32 OT-32 40PEP 80PEP BDX 241 TRANSISTOR 246 transistor BD 240 transistor BD 246 TRANSISTOR Bd 137 BD139-6 transistor BD 249 transistor bd 242 transistor BD245 BD137