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    bot64

    Abstract: BDT64A BDT64AF BDT64BF BDT64C BDT64CF BDT64F
    Text: BDT64F BDT6 11BDT64BF BDT6 Silicon Darlington power transistors Fig. 5 Safe Operating Area; = 25 °C . I Region of permissible DC operation. (II) Permissible extension for repetitive pulse operation. (1) Ptot max anc* Ppeak max lines. (2) Second-breakdown limits.


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    BDT64F BDT64A BDT64BF BDT64C 7Z21455 bot64 BDT64A BDT64AF BDT64C BDT64CF PDF

    BDT64C

    Abstract: BDT65 BDT65A BDT64A BDT64 7Z66 BDT64B BDT65B BDT65C
    Text: n o n - BDT64; 64A BDT64B; 64C SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m o n o lith ic Darlington c irc u it fo r audio o u tp u t stages and general purpose a m p lifie r and switching applications. TO-22C plastic envelope. N-P-N complements are BDT65,


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    BDT64; BDT64B; T0-220 BDT65, BDT65A, BDT65B BDT65C. BDT64 BDT64F BDT64AF BDT64C BDT65 BDT65A BDT64A 7Z66 BDT64B BDT65C PDF