B11NK50Z
Abstract: p11nk50zfp P11NK50 p11nk50z P11NK
Text: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ tjmax-0.4Ω -11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET General features Type VDSS RDS on ID STP11NM60 650 V <0.45Ω 11A STP11NM60FP 650 V <0.45Ω 11A STB11NM60 650 V <0.45Ω 11A STB11NM60-1
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STP11NM60
STP11NM60FP
STB11NM60
STB11NM60-1
O-220/FP/D2PAK/I2PAK
O-220
B11NK50Z
p11nk50zfp
P11NK50
p11nk50z
P11NK
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p11nk60zfp
Abstract: P11NK60Z STP11NK60ZFP p11nk60 stp11nk60 STP11NK60Z B11NK60Z P11NK STB11NK60ZT4 STB11NK60
Text: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ tjmax-0.4Ω -11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET General features Type VDSS RDS on ID STP11NM60 650 V <0.45Ω 11A STP11NM60FP 650 V <0.45Ω 11A STB11NM60 650 V <0.45Ω 11A STB11NM60-1
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STP11NM60
STP11NM60FP
STB11NM60
STB11NM60-1
O-220/FP/D2PAK/I2PAK
O-220
p11nk60zfp
P11NK60Z
STP11NK60ZFP
p11nk60
stp11nk60
STP11NK60Z
B11NK60Z
P11NK
STB11NK60ZT4
STB11NK60
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p11nm60fp
Abstract: P11NM60
Text: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ TJmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET General features Type VDSS @TJ=TJmax RDS(on) ID STP11NM60 650V <0.45Ω 11A STP11NM60FP 650V <0.45Ω 11A STB11NM60 650V <0.45Ω
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STP11NM60
STP11NM60FP
STB11NM60
STB11NM60-1
O-220/FP/D2PAK/I2PAK
STP11NM60
STB11NM60
O-220
p11nm60fp
P11NM60
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p11nm60fp
Abstract: p11nm60 b11nm60 p11nm60 data sheet B11NM60-1 STB11NM60 STB11NM60-1 STB11NM60T4 STP11NM60 STP11NM60FP
Text: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ TJmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET General features Type VDSS @TJ=TJmax RDS(on) ID 3 STP11NM60 650V <0.45Ω 11A STP11NM60FP 650V <0.45Ω 11A STB11NM60 650V
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STP11NM60
STP11NM60FP
STB11NM60
STB11NM60-1
O-220/FP/D2PAK/I2PAK
STP11NM60
STB11NM60
O-220
p11nm60fp
p11nm60
b11nm60
p11nm60 data sheet
B11NM60-1
STB11NM60-1
STB11NM60T4
STP11NM60FP
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p11nk60zfp
Abstract: P11NK60Z STP11NK60Z p11nk60 STB11NK60
Text: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ TJmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET General features Type VDSS @TJ=TJmax RDS(on) ID 3 STP11NM60 650 V <0.45Ω 11A STP11NM60FP 650 V <0.45Ω 11A STB11NM60 650 V
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STP11NM60
STP11NM60FP
STB11NM60
STB11NM60-1
O-220/FP/D2PAK/I2PAK
O-220
p11nk60zfp
P11NK60Z
STP11NK60Z
p11nk60
STB11NK60
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Untitled
Abstract: No abstract text available
Text: AOW11S65/AOWF11S65 650V 11A α MOS TM Power Transistor General Description Product Summary The AOW11S65 & AOWF11S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
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AOW11S65/AOWF11S65
AOW11S65
AOWF11S65
O-262
O-262F
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA0556D 2SK4088LS N-Channel Power MOSFET http://onsemi.com 650V, 11A, 0.85Ω, TO-220F-3FS Features • • ON-resistance RDS on =0.65Ω (typ.) 10V drive • Input capacitance Ciss=1000pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C
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ENA0556D
2SK4088LS
O-220F-3FS
1000pF
A0556-7/7
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA0556D 2SK4088LS N-Channel Power MOSFET http://onsemi.com 650V, 11A, 0.85Ω, TO-220F-3FS Features • • ON-resistance RDS on =0.65Ω (typ.) 10V drive • Input capacitance Ciss=1000pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C
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ENA0556D
2SK4088LS
O-220F-3FS
1000pF
PW10s,
A0556-7/7
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Untitled
Abstract: No abstract text available
Text: AOT11S65/AOB11S65/AOTF11S65 650V 11A α MOS TM Power Transistor General Description Product Summary The AOT11S65 & AOB11S65 & AOTF11S65 have been TM fabricated using the advanced αMOS high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
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AOT11S65/AOB11S65/AOTF11S65
AOT11S65
AOB11S65
AOTF11S65
AOT11S65L
AOB11S65L
AOTF11S65L
O-220
O-265
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Untitled
Abstract: No abstract text available
Text: AOT11S65/AOB11S65/AOTF11S65 650V 11A α MOS TM Power Transistor General Description Product Summary The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
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AOT11S65/AOB11S65/AOTF11S65
AOT11S65
AOB11S65
AOTF11S65
AOT11S65L
AOB11S65L
AOTF11S65L
O-220
O-263
D2PA65
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Untitled
Abstract: No abstract text available
Text: AOT11S65/AOB11S65/AOTF11S65 650V 11A α MOS TM Power Transistor General Description Product Summary The AOT11S65 & AOB11S65 & AOTF11S65 have been TM fabricated using the advanced αMOS high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
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AOT11S65/AOB11S65/AOTF11S65
AOT11S65
AOB11S65
AOTF11S65
AOT11S65L
AOB11S65L
AOTF11S65L
O-220
O-265
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11NM60
Abstract: STP11NM60FP 11A 650V MOSFET STB11NM60 STB11NM60-1 STP11NM60
Text: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-CHANNEL 650V@Tjmax 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE VDSS @ Tjmax STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 650 V 650 V 650 V 650 V RDS(on) < 0.45 < 0.45 < 0.45 < 0.45 Ω Ω
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STP11NM60
STP11NM60FP
STB11NM60
STB11NM60-1
O-220/FP/D2PAK/I2PAK
STP11NM60
STB11NM60
O-220
11NM60
STP11NM60FP
11A 650V MOSFET
STB11NM60-1
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Mosfet
Abstract: SSF11NS65 diode 945
Text: SSF11NS65 650V N-Channel MOSFET Main Product Characteristics VDSS 650V RDS on 0.36ohm(typ.) ID 11A Marking and Pin TO-220 Schematic Diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge
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SSF11NS65
36ohm
O-220
SSF11NS65
Mosfet
diode 945
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Mosfet
Abstract: SSF11NS65F
Text: SSF11NS65F 650V N-Channel MOSFET Main Product Characteristics VDSS 650V RDS on 0.36ohm(typ.) ID 11A TO220F Marking and Pin Schematic Diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge
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SSF11NS65F
36ohm
O220F
SSF11NS65F
Mosfet
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FCPF22N60NT
Abstract: FCP22N60N
Text: SupreMOSTM FCP22N60N / FCPF22N60NT tm N-Channel MOSFET 600V, 22A, 0.165Ω Features Description • RDS on = 0.140Ω ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling
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FCP22N60N
FCPF22N60NT
150oC
FCPF22N60NT
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11A 650V MOSFET
Abstract: FCP22N60N FCPF22N60NT
Text: SupreMOSTM FCP22N60N / FCPF22N60NT tm N-Channel MOSFET 600V, 22A, 0.165Ω Features Description • RDS on = 0.140Ω ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling
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FCP22N60N
FCPF22N60NT
150oC
11A 650V MOSFET
FCPF22N60NT
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Untitled
Abstract: No abstract text available
Text: ICE11N65FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 11A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.25Ω Typ Qg VDS = 480V 59nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability
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ICE11N65FP
250uA
O-220
0E-06
0E-04
0E-02
0E-00
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FCA22N60N
Abstract: No abstract text available
Text: SupreMOSTM FCA22N60N tm N-Channel MOSFET 600V, 22A, 0.165Ω Features Description • RDS on = 0.140Ω ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior
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FCA22N60N
150oC
FCA22N60N
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FCH22N60N
Abstract: FCH22N60 11A 650V MOSFET
Text: SupreMOSTM FCH22N60N tm N-Channel MOSFET 600V, 22A, 0.165Ω Features Description • RDS on = 0.140Ω ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior
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FCH22N60N
FCH22N60N
FCH22N60
11A 650V MOSFET
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FCA22N60N
Abstract: No abstract text available
Text: SupreMOSTM FCA22N60N tm N-Channel MOSFET 600V, 22A, 0.165Ω Features Description • RDS on = 0.140Ω ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior
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FCA22N60N
150oC
FCA22N60N
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FCI11N60
Abstract: No abstract text available
Text: TM FCI11N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and
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FCI11N60
FCI11N60
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11A 650V MOSFET
Abstract: FCB11N60
Text: TM FCB11N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and
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FCB11N60
FCB11N60
11A 650V MOSFET
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FCI11N60
Abstract: No abstract text available
Text: SuperFET TM FCI11N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and
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FCI11N60
FCI11N60
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FCB11N60F
Abstract: FCB11N60FTM
Text: SuperFET FCB11N60F tm 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and
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FCB11N60F
120ns
FCB11N60F
FCB11N60FTM
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