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Kingbright PSBC08-11ES6WB
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11ES6 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
11ES6		Nihon Inter Electronics	SILICON RECTIFIER DIODE		Scan	PDF
11ES6		Nihon Inter Electronics	General Purpose Silicon Rectifier Diode		Scan	PDF

11ES6 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BC548 TRANSISTOR REPLACEMENT Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction	Original	BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587	PDF
BUT11APX equivalent Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210	Original	BT148-600R BT148-400R BUT11APX equivalent BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice	PDF
EQUIVALENT BYD33D Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent Text: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and	Original	PBYR3045WT BYD73D CTB34M BYD73G SB1035 PBYR1040 1N5059 SB1040 EQUIVALENT BYD33D 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent	PDF
BT136-600E equivalent Abstract: D2499 equivalent D1878 equivalent BT139-600 equivalent C4927 d1577 d1554 C5386 c5129 e13005 equivalent Text: “Philips Type” refers to closest Philips alternative or equivalent if available. Always consider the application and compare data specifications before recommending the suitable Philips type. Notes: 1 - dual device. 2 - competitor RDS on falls between two Philips types, hence either stated device may be suitable.	Original	10TQ045S 11DQ03 11DQ04 11EQ03 11EQ04 11EQS 15DF4 1N3645 BT136-600E equivalent D2499 equivalent D1878 equivalent BT139-600 equivalent C4927 d1577 d1554 C5386 c5129 e13005 equivalent	PDF
BU4508DX equivalent Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent Text: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210	Original	BT148-600R BT148-400R BU4508DX equivalent BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent	PDF
11E51 11E52 11E54 Abstract: 11E52 11ES2 11ES8 11ES1 11ES4 11ES6 silicon rectifier diode Low Forward Voltage Diode Diode BFC 110 Text: SILICON RECTIFIER DIODE 11ES1 11ES2 11ES4 11ES6 11ES8 ÎA/IOO— 800V FEATURES 2.7 .106 d i a o Miniature Size M AX U1A * Low Forward Voltage Drop ° Low Reverse Leakage Current 0.60(.024) d i a 0.54Ç021) ° High Surge Capability . 27(1.06) MIN ° 26mm and 52mm Inside Tape Spacing	OCR Scan	A/100â 11ES1 11ES2 11ES4 11ES6 11ES8 54C021) 11ES4 11ES6 11E51 11E52 11E54 11E52 11ES8 silicon rectifier diode Low Forward Voltage Diode Diode BFC 110	PDF
11ES2 Abstract: 11ES1 11ES4 11ES6 11ES8 Text: llESl 11ES2 11ES4 11ES6 11ES8 1A /10 0 — 800V SILICON RECTIFIER DIODE FEATU R ES o Miniature Size MAX ULA ° Low Forward Voltage Drop ° Low Reverse Leakage Current 0.601024 DIA 0.54 .021) ° High Surge Capability 27(1.06) MIN ° 26mm and 52mm Inside Tape Spacing	OCR Scan	A/100â 11ES1 11ES2 11ES4 11ES6 11ES8 11ES6 11ES8 LL1S123	PDF
Untitled Abstract: No abstract text available Text: SILICON RECTIFIER DIODE 1IESI 11ES2 11ES4 “ g i a /100~800 v FEATURES 2.7 .106 ° Miniature Size M AX DIA 0 Low Forward Voltage Drop ° Low Reverse Leakage Current 0.60(.024)DIAa 0.54C021) .27(1.06) ° High Surge Capability MIN ° 26mm and 52mm Inside Tape Spacing	OCR Scan	11ES2 11ES4 54C021) 11ES1 11ES6 11ES1 11ES2 11ES8	PDF
30KF60B Abstract: 10EF1 NSF03A20 C25P10Q F10P10Q C25P40F KSF25A120B C10P10Q 61MQ60 c16p40f Text: ALPHA-NUMERICAL INDEX ALPHA-NUMERICAL INDEX cont’d TY PE TY PE P ag e P age TY PE P age TY PE Page TY PE P age 1N4001 604 5KF40 482 10DF6 440 ♦ 11EFS3 434 20E2 610 1N4002 604 5KF40B 482 ♦ 10DF8 440 ♦ 11EFS4 434 20E4 610 IN 4003 604 ♦ 5KQ30 166	OCR Scan	1N4001 1N4002 1N4004 1N4005 1N4006 1N4007 2VF10CT F20CT F30CT F40CT 30KF60B 10EF1 NSF03A20 C25P10Q F10P10Q C25P40F KSF25A120B C10P10Q 61MQ60 c16p40f	PDF
motorola diode cross reference Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement" Text: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3	OCR Scan	1N5817 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 11DQ03 11DQ04 motorola diode cross reference replacement UF5402 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"	PDF
11ES2 Abstract: No abstract text available Text: SILICON RECTIFIER DIODE ÌA/IOO— 800V JJIII 11ES4 FEATURES ‘2.7 .106 dia . M A X U1A ° Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current 0.6CH.024)nrA 0.54<.0211 ° High Surge Capability .27(1.06) MIN ° 26mm and 52mm Inside Tape Spacing	OCR Scan	11ES4 11ES1 11ES2 11ES4 11ES8 -25-C 11ES1- 11ES8	PDF
F10P100 Abstract: 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F Text: SELECTORS GUIDE S c h o ttk y B a rrie r Diode-Single C ase Style Io A V FM (V) 1.0 0.45 30 11EQS03L 52 0.45 20 ♦ 11EQS02L 50 0.55 30 40 ♦ 11EQ03 11EQ04 60 0.58 50 60 ♦ 11EQ05 11EQ06 62 0.85 90 100 ♦ 11EQ09 11EQ10 64 0.55 30 40 ♦ 11EQS03 11EQS04	OCR Scan	11EQS03L 11EQS02L 11EQ03 11EQ04 11EQ05 11EQ06 11EQ09 11EQ10 11EQS03 11EQS04 F10P100 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F	PDF